Abstract: Disclosed is a bandgap reference voltage generator insensitive to changes of process, voltage, and temperature. A bandgap reference voltage generator may detect current having characteristic of CTAT and current having characteristic of PTAT which flow in a current compensation part included in an amplification part, and provide body voltage to one of two input transistors included in the amplification part in response to ratio of the two currents when the ratio is different from the preconfigured reference value. Thus, characteristics according to changes of parameters of elements and change of offset of the amplification part due to changes of PVT may be enhanced, and a characteristic of power supply rejection ratio (PSRR) may be enhanced.

Abstract: A bandgap reference circuit includes: a first PMOSFET connected to a power supply node; a first resistor connected to a drain of the first PMOSFET; a first diode connected to the first resistor and a ground node; a second PMOSFET connected to the power supply node; a second diode connected to a drain of the second PMOSFET and the ground node; a second resistor connected between the first PMOSFET and ground node; a third resistor connected between the second PMOSFET and ground node; a third PMOSFET connected to the power supply node and an output node of a reference voltage; a fourth resistor connected between the third PMOSFET and ground node; and an operational amplifier having a non-inverting input terminal connected to the first PMOSFET and an inverting input terminal connected to the second PMOSFET, an output voltage being applied to each gate of the first to third PMOSFETs.

Abstract: Described herein is an apparatus and system of a low-impedance reference voltage generator. The apparatus comprises: a voltage-control loop including a first transistor to provide an output voltage; and a current-control loop to sense current through the first transistor, relative to a reference current. The node having the output voltage is a low-impedance node.

Abstract: Various embodiments of the present invention relate to a reference voltage generator circuit. Specifically, the circuit may for example comprise: a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch; wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series; and a power supply terminal located between said two second resistive elements on the second branch. A high-precision reference voltage relative to the voltage source can be provided at the power supply terminal by using the circuit provided by various embodiments of the present invention.

Abstract: The present invention provides a reference voltage generator and a corresponding integrated circuit.

Abstract: A method and device are disclosed for providing an ultra low-noise hand gap voltage reference. The method detects a first voltage drop across a first diode reference, and a second voltage drop across a second voltage reference that includes a second diode. The first and second voltage drops are compared. Temperature compensation currents are supplied to the first diode reference and second voltage references in addition to constant currents, where the constant currents have the same value across a first temperature range. As a result of the constant current, a minimal amount of temperature compensation current is required. Alternatively stated, temperature compensation current is provided having a rate of change greater than PTAT. In response to comparing the first voltage drop to the second voltage drop, a true sub-volt hand gap voltage is supplied across a third voltage reference including a diode, that is constant across the first temperature range.

Abstract: A timer to provide pulses at a comparator output wherein a frequency of the pulses is dependent on temperature, wherein providing each pulse includes biasing a first input of the comparator at a voltage and operating a transistor in a subthreshold region of operation to change the voltage of the first input of a comparator at a rate dependent upon temperature. The output of the comparator changes state when the voltage of the first input crosses a voltage of a second input of the comparator.

Abstract: A semiconductor integrated circuit includes an internal reference voltage generation unit configured to generate an internal reference voltage; a high voltage generation unit configured to pump an external driving voltage based on the internal reference voltage applied from the internal reference voltage generation unit, and generate a high voltage having a specified level; and a reference voltage transfer unit configured to generate a test reference voltage from a reference voltage in a package test mode to correspond to a change in a driving operation of the external driving voltage applied from outside, and monitor and force the internal reference voltage.

Abstract: A power adapter includes a regulation device, which includes a division circuit, a reference circuit, and an impedance regulation circuit. The division circuit includes a first reference terminal and a second reference terminal. The second reference terminal is connected to an output terminal of the regulation device. The reference circuit includes a third reference terminal connected to the first reference terminal, and the reference circuit outputs a stable reference voltage via the third reference terminal, to provide the stable reference voltage for the first reference terminal. The impedance regulation circuit is connected to the first reference terminal, to provide equivalent impedance for the first reference terminal. The impedance of the equivalent impedance changes in a way corresponding to changes in the current flowing through the output terminal.

Abstract: A bandgap reference voltage generator is provided. In one embodiment, the bandgap reference voltage generator includes a first current generator, a second current generator, and an output voltage generator. The first current generator generates a first current with a positive temperature coefficient. The second current generator generates a second current with a negative temperature coefficient. The output voltage generator generates a third current with a level equal to that of the first current, generates a fourth current with a level equal to that of the second current, adds the third current to the fourth current to obtain a combined current with a zero temperature coefficient, and generates a reference voltage according to the combined current.

Abstract: This application discusses apparatus and methods for reducing supply voltage induced band gap voltage variation. In an example, a method of compensating a reference voltage current source for supply voltage variation can include providing at least a portion if a reference current for establishing the reference voltage using a first output transistor coupled to the supply voltage, maintaining a constant voltage across the first output transistor using a second output transistor coupled between the first output transistor and an output node, modulating a compensation impedance between a first node and ground as the supply voltage varies, the first node located where the first output transistor is coupled to the second output transistor, and wherein the modulating includes modulating the compensation impedance to substantially equal an output impedance, the output impedance measured between an output node and an input for the supply voltage.

Abstract: A curvature-corrected bandgap reference is disclosed. The curvature-corrected bandgap reference comprises a Brokaw bandgap circuit. The Brokaw bandgap circuit includes an output node providing a reference voltage. The Brokaw bandgap circuit further comprising a first BJT device including a first base terminal coupled to the output node and a first emitter terminal. The first BJT device operates at a first current density that is substantially proportional to absolute temperature. The curvature-corrected bandgap reference also includes a second BJT device including a second base terminal coupled to the output node and a second emitter terminal. The second BJT device operates at a second current density that is substantially independent of temperature. Finally the curvature-corrected bandgap reference includes a correction voltage proportional to a voltage difference of the first and second emitter terminals, wherein the correction voltage substantially cancels a curvature of the reference voltage.

Abstract: Provided is a reference voltage generation circuit including a first circuit including a variable resistor and a PN junction device connected in series. The variable resistor and the PN junction device connected in series have a first current, that has temperature characteristics corresponding to a nonlinear component of temperature characteristics of an inter-terminal voltage of the PN junction device, caused to flow therethrough.

Abstract: A method of regulating a supply voltage (Vgg) provided to a load circuit. The method can include generating at least one reference voltage (Vr1, Vr2, Vr3) having a negative voltage-temperature coefficient. The method further can include applying the reference voltage as a bias voltage (Vbias) to a current sink that is electrically coupled in parallel with a path of a leakage current (Ileak) drawn by the load circuit. A related voltage regulator can include a current sink that is electrically coupled in parallel with a path of a leakage current drawn by a load circuit, and a bias control circuit that generates at least one reference voltage having a negative voltage-temperature coefficient and applies the reference voltage as a bias voltage to a current sink.

Abstract: An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.

Abstract: A reference voltage generation circuit includes a standard electrical current path including at least a pair of NMOS and PMOS, and a constant electrical current supplying circuit for supplying a constant electrical current to the standard electrical current path. The pair of NMOS and PMOS is configured to share a gate potential and a source-drain electrical current. Accordingly, the reference voltage generation circuit is configured to generate a reference voltage as a potential difference between two positions sandwiching the NMOS and PMOS. The reference voltage generation circuit further includes a timing compensation circuit. The timing compensation circuit includes a compensation DMOS for forming a detour electrical current path for bypassing the NMOS according to an on signal.

Abstract: A bandgap voltage reference circuit for generating a bandgap voltage reference. An embodiment comprises a current generator controlled by a first driving voltage for generating a first current depending on the driving voltage, and a first reference circuit element coupled to the controlled current generator for receiving the first current and generating a first reference voltage in response to the first current. The circuit further comprises a second reference circuit element for receiving a second current corresponding to the first current; said second reference circuit element is adapted to generate a second reference voltage in response to the second current. The circuit further comprises an operational amplifier having a first input coupled to the first circuit element and a second input coupled to the second reference circuit element. The circuit also comprises a control circuit comprising first capacitive element and second capacitive element.

Abstract: A PTAT circuit includes a first, second, third, and fourth transistors plus a resistor. The first and second transistors have control terminals coupled to each other. The third and fourth transistors have control terminals coupled to each other. The third transistor sources a first current to the first transistor and the fourth transistor sources a second current to the second transistor. The resistor is coupled at a node to the second transistor. A current source circuit sources additional current into the node that is derived from the first and second currents. In one implementation, the additional current is a scaled mirror of the second current. In another implementation, the additional current is a scaled mirror of the sum of the first and second currents. An output current is obtained by mirroring one of the first-third currents. A band-gap output voltage is obtained by applying the additional current across a resistance.

Abstract: A reference voltage generation circuit comprising a reference voltage generation and comparison unit, a drive unit, and M drive unit candidate circuits is provided in which the reference voltage generation and comparison unit generates reference voltage, and an output voltage output from the reference voltage generation circuit is input into the reference voltage generation and comparison unit as a negative feedback voltage. After being compared with the reference voltage, the output voltage is output from the reference voltage generation and comparison unit to the drive unit and the M drive unit candidate circuits. When power supply voltage of the reference voltage generation circuit varies, after being driven by the drive unit and the M drive unit candidate circuits, the output voltage is output to an output terminal of the reference voltage generation circuit so that the output voltage can be stabilized at the level of the reference voltage.

Abstract: A bandgap reference circuit includes a first circuit, a second circuit and a third circuit. The first circuit is for generating a first current and a first voltage according to a first reference voltage. The second circuit is coupled to the first circuit, for generating a second voltage according to the first voltage. The third circuit is coupled to the first circuit and the second circuit, for generating a voltage offset according to the first current, and generating a bandgap reference voltage according to the second voltage and the voltage offset. The first circuit and the second circuit complement each other for offsetting variations of the bandgap reference voltage due to temperature changes.

Abstract: A reference voltage generator includes a first transistor and a second transistor coupled in series between a current supply and ground. Gate insulating films of the first transistor and the second transistor are made of the same type of film with the same thickness. Impurities contained in gate electrodes of the first transistor and the second transistor have different conductivity types, or have the same conductivity type and different concentrations. The first transistor has a greater gate width than the second transistor. The first transistor and the second transistor operate in a subthreshold region when a reference voltage is output outside.

Abstract: The present invention relates to reference voltage regulating methods and circuits for a constant current driver. In one embodiment, a method can include: setting a reference voltage circuit matching with a current output channel of a constant current source; setting a first resistor of the reference voltage circuit to follow an ideal equivalent resistor of the current output channel, and maintaining a proportion of the first resistor and the ideal equivalent resistor to be no less than a predetermined value M; setting a first current of the reference voltage circuit to follow an ideal output current of the current output channel, and maintaining a proportion of the first current and the ideal output current to be no less than 1/M; and setting a product of the first current and the first resistor to be a reference voltage of the reference voltage circuit.

Abstract: In one form, a reference circuit includes a measurement circuit and a determination circuit. The measurement circuit has an output for providing a ratio of a difference in base-to-emitter voltage (VBE) of a bipolar device at different current densities to a VBE of the bipolar device at a first current density. The determination circuit has an input coupled to the measurement circuit, and an output for providing a digital value of a parameter in response to the ratio. In another form, the reference circuit further includes a voltage generation circuit having an input coupled to the determination circuit, and an output, for modulating an analog voltage using the digital value to provide a reference voltage to the output, wherein the reference voltage is temperature compensated over a temperature range.

Abstract: A reference circuit includes a first transistor having a first current electrode, a control electrode, and a second current electrode coupled to a power supply terminal. The reference circuit further includes a resistive element including a first terminal coupled to the control electrode of the first transistor and a second terminal coupled to the first current electrode. Additionally, the reference circuit includes a second transistor including a first current electrode coupled to the second terminal of the resistive element, a control electrode coupled to the second terminal, and a second current electrode coupled to the power supply terminal. The second transistor is configured to produce an output signal related to a voltage at the control electrode of the first transistor.

Abstract: A switching power supply device includes a first control circuit that turns a first switch on when first and second switches are off and a voltage at a junction node therebetween is increased to decrease a voltage across the first switch to a first threshold voltage, turns off when a first ON-period has elapsed from when the first switch is turned on, and lengthens the first ON-period as an output voltage decreases relative to a reference voltage; and a second control circuit that turns the second switch on when both switches are off and a voltage across the second switch is decreased to a second threshold voltage, turns off when a reverse current flows through the inductor, sufficient to increase the voltage at the junction node to decrease the voltage across the first switch to the first threshold voltage after the second switch is turned off.

Abstract: The present invention discloses a bandgap reference circuit. The bandgap reference circuit includes an operational transconductance amplifier, and a reference generation circuit. The operational transconductance amplifier includes a self-biased operational transconductance amplifier, for utilizing an area difference between bipolar junction transistors of an input pair to generate a first positive temperature coefficient current to bias the input pair, and generating a positive temperature coefficient control voltage and a negative temperature coefficient control voltage; and a feedback voltage amplifier, for amplifying the negative temperature coefficient control voltage, and outputting a reference voltage to the input pair for feedback, to generate a first negative temperature coefficient current. The reference generation circuit generates a summation voltage or a summation current according to the positive temperature coefficient control voltage and the negative temperature coefficient control voltage.

Abstract: Low voltage circuits are protected from high voltage/current conditions, as may be implemented in accordance with one or more example embodiments. An additional/secondary shunt circuit/switch is implemented to shunt additional current as supply voltage steps or otherwise increases. In some implementations, the secondary shunt circuit includes a transistor having its drain coupled to its gate via a large capacitance that operates to maintain the gate voltage at about a constant level. This operates to facilitate the draining of additional current, and maintaining a low bandgap voltage supply level.

Abstract: A bandgap reference voltage generator includes a bipolar assembly having a first resistor, a first branch and a second branch that is in parallel with the first branch. The first branch includes a first bipolar transistor with a base coupled to a fixed voltage. The second branch includes a second bipolar transistor with a base coupled to the fixed voltage and a second resistor coupled in series with the second bipolar transistor. A differential module is coupled to the first and second bipolar transistors and configured to balance the currents in the first and the second branches. The bandgap reference voltage is output at a node to which the first resistor is connected.

Abstract: A voltage trimming circuit of a semiconductor apparatus includes: a first voltage trimming unit configured to trim a first reference voltage having a first characteristic with respect to temperature based on a first trimming signal, and generate a first trimming reference voltage; a second voltage trimming unit configured to trim a second reference voltage having a second characteristic with respect to the temperature based on a second trimming signal, and generate a second trimming reference voltage; and an adjusting unit configured to trim a voltage formed from a potential difference between the first and second trimming reference voltages based on a select signal, and generate a final trimming reference voltage.

Abstract: A band gap reference circuit including a band gap reference generator having an output for providing a reference voltage and a startup circuit for controlling current provided to the band gap reference generator when activated. The startup circuit includes a turnoff circuit having an output to deactivate the startup circuit to not control current to the band gap reference generator based on a voltage of the output of the band gap reference generator. The turnoff circuit includes an inverter having a first transistor of a first conductivity type in series with a second transistor of a second conductivity type opposite the first conductivity type. The startup circuit includes a body bias circuit connected to a body of the first transistor to provide a voltage differential between the body of the first transistor and a source terminal of the first transistor.

Abstract: A voltage generating circuit includes a range adjusting unit configured to output a code signal for adjusting the range of an output voltage and to determine a magnitude of the output voltage to set a control code while an output range adjusting operation is performed. The range adjusting unit is configured to output the code signal in response to a data code received from the outside after the output range adjusting operation is complete. The voltage generating circuit includes a digital analog converter configured to output a conversion voltage in response to the code signal, and an output unit configured to set an amplification gain thereof according to the control code and to amplify the conversion voltage according to the amplification gain to output the output voltage.

Abstract: A reference circuit for an oscillator module is provided. The reference circuit includes a reference voltage generation unit and a reference current generation unit. The reference voltage generation unit includes an electric element having a voltage proportional to absolute temperature (PTAT voltage) and provides a reference voltage based on the PTAT voltage. The reference current generation unit is coupled to the reference voltage generation unit and provides a reference current to the oscillator circuit to serve as an input current based on the PTAT voltage. The oscillator circuit generates a clock signal based on the reference voltage and the input current. The reference voltage and the input current are proportional to absolute temperature and have the same change trend relative to absolute temperature, such that the clock signal is a temperature insensitive signal. An oscillator module including an oscillator circuit and the foregoing reference circuit is also provided.

Abstract: An improved reference voltage (Vref) generator useable, for example, in sensing data on single-ended channels is disclosed. The Vref generator can be placed on the integrated circuit containing the receivers, or may be placed off chip. In one embodiment, the Vref generator comprises an adjustable-resistance voltage divider in combination with a current source. The voltage divider is referenced to I/O power supplies Vddq and Vssq, with Vref being generated at a node intervening between the adjustable resistances of the voltage divider. The current source injects a current into the Vref node and into a non-varying Thevenin equivalent resistance formed of the same resistors used in the voltage divider. So constructed, the voltage generated equals the sum of two terms: a first term comprising the slope between Vref and Vddq, and a second term comprising a Vref offset.

Abstract: In accordance with a bandgap circuit and a method of starting the bandgap circuit, a start signal is continuously supplied to a differential amplifier circuit to start up the differential amplifier circuit that controls a bandgap core circuit until the differential amplifier circuit has started up, and then the supply of the start signal to the differential amplifier circuit is discontinued after the differential amplifier circuit has started up.

Abstract: Some aspects of the present disclosure relate to an apparatus that includes an integrated chip having a bandgap reference circuit and one or more heating elements. The bandgap reference circuit is located within a subset of the integrated chip and outputs a reference voltage having a temperature dependence. The one or more of the heating elements vary the temperature of the subset of the integrated chip.

Abstract: A bandgap voltage reference circuit includes a current generation stage configured to generate a proportional to absolute temperature (PTAT) current and a complementary to absolute temperature (CTAT) current and to generate a reference current by combining the PTAT and CTAT currents. An output stage is coupled to the current generation stage and configured to combine the PTAT current and the CTAT current to generate a bandgap voltage reference. A curvature correction circuit is configured to generate a curvature correction current that mirrors the reference current generated from the PTAT and CTAT currents. The curvature correction current has a ratio relative to the reference current given by a current ratio parameter having value that is less than one, equal to one, or greater than one. In this way the value of the current ratio parameter can be varied to cancel a non-linear dependence on temperature of the bandgap voltage reference, thereby providing a curvature-compensated bandgap voltage reference.

Abstract: A regulator for providing a low dropout voltage at an output node of the regulator is provided. An amplifier has a non-inverting input terminal for receiving an input voltage, an inverting input terminal and an output terminal. A first resistor is coupled between a ground and the inverting input terminal of the amplifier. A second resistor is coupled to the inverting input terminal of the amplifier. A first transistor is coupled between a voltage source and the second resistor. A current source coupled between the voltage source and a gate of the first transistor provides a bias current. A second transistor coupled between the first transistor and a current mirror has a gate coupled to the output terminal of the amplifier. The first and second transistors are different type MOS transistors. The replica unit generates the low dropout voltage according to a voltage of the output terminal of the amplifier.

Abstract: The present invention provides a programmable low dropout linear regulator using a reference voltage to convert an input voltage into a regulated voltage according to a control signal. The programmable low dropout linear regulator includes an operational amplifier having a negative input coupled to receive the reference voltage, a first transistor having a gate coupled to an output terminal of the operational amplifier and a first source/drain coupled to an output terminal of the regulated voltage, a first impedance coupled between a positive input of the operational amplifier and the output terminal of the regulated voltage, and a second impedance coupled between the positive input of the operational amplifier and a ground. The second impedance includes a second transistor having a gate coupled to receive the control signal.

Abstract: A voltage reference circuit with temperature compensation includes a power supply, a first reference voltage supply, a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a resistor connected to the second NMOS source and ground. The voltage reference circuit also includes a second reference voltage supply, a third PMOS transistor, a fourth PMOS transistor, a third NMOS transistor, a fourth NMOS transistor, and a fifth NMOS transistor with a drain connected to the source of the fourth NMOS transistor, a source connected to the ground, and a gate connected to the first reference voltage output.

Abstract: An embodiment of a method for providing a bandgap voltage is described. In such an embodiment, current density of a current in a bandgap circuit is shifted into a current density range having at least a substantially stable scaling factor to enhance temperature stability of the bandgap voltage, and the bandgap voltage output is moved to a target voltage.

Abstract: The present invention relates to an apparatus of bandgap buffer which comprising a voltage processing module to produce a bandgap buffer voltage in response to an input voltage and a feedback signal and a symmetry circuit coupled to the voltage processing module for producing the feedback signal and regulating the feedback signal in response to the input voltage.

Abstract: A current calibration method and the associated control circuit are provided. The method includes: providing a predetermined voltage to the differential output for obtaining an accurate current passing through the panel resistor during a calibration procedure and, providing a driving current to the differential output according to the accurate current during a normal operation procedure.

Abstract: A bandgap voltage reference and voltage regulator system includes a bandgap voltage reference circuit and a voltage regulator circuit that share a single, common amplifier. The amplifier acts as a gain stage for the reference circuit and as an error amplifier for a driver stage of the regulator circuit. The regulator circuit has an input reference generated by the reference circuit, and the reference circuit acts as a load to the driver stage, obviating the need for a bias resistance network. By sharing the amplifier and obviating the need for a resistance network, the area and overall quiescent current of the system are reduced. The system can be implemented in CMOS/BiCMOS technology and is suited for low power applications.

Abstract: Integrated circuits with voltage regulation circuitry are provided. Voltage regulation circuitry may be powered by a core supply voltage and may not have a bandgap reference circuit. Voltage regulation circuitry may have an error amplifier in a negative feedback configuration. The error amplifier may have inputs connected to reference voltages generated by resistor strings. The resistor strings may be trimmable to provide a desired negative voltage. The desired negative voltage may be fed to the gates of transistors to help reduce leakage. The desired negative voltage may be have improved tolerance to process-voltage-temperature variations and may improve the reliability of transistors.

Abstract: A MOS transistor generates an output current based on a voltage induced across a drain and a source thereof. A gate bias voltage generator circuit generates a gate bias voltage so as to operate the MOS transistor in a strong-inversion linear region, and applies the gate bias voltage to a gate of the MOS transistor. A drain bias voltage generator circuit generates a drain bias voltage, and applies the drain bias voltage to the drain of the MOS transistor. An added bias voltage generator circuit generates an added bias voltage, which has a predetermined temperature coefficient and includes a predetermined offset voltage, so that the output current becomes constant against temperature changes. The drain bias voltage generator circuit adds the added bias voltage to the drain bias voltage, and applies a voltage of the adding results to the drain of the MOS transistor as the drain bias voltage.

Abstract: An integrated circuit includes an operational circuit module receiving a supply voltage from a voltage regulator external to the integrated circuit, and an adaptive voltage scaling module to adjust the supply voltage based on performance characteristics of the operational circuit module. The adaptive voltage scaling module can include a performance monitoring module disposed on the integrated circuit and configured to generate at least an indicator corresponding to at least one performance characteristic of the operational circuit module. The adaptive scaling module can include a voltage requirement determination and voltage feedback generator module disposed on the integrated circuit and coupled to the performance monitoring module. The voltage requirement determination and voltage feedback generator module is configured to output a feedback voltage signal having a voltage level as a function of at least the indicator.

Abstract: A voltage generator includes a first transistor, a second transistor, an operational amplifier, a capacitor, a third transistor, a fourth transistor and a first resistor. The operational amplifier includes a first terminal coupled to a second terminal of the first transistor, and a second terminal coupled to a second terminal of the second transistor. The capacitor is coupled between an output terminal of the operational amplifier and a ground terminal. The third transistor is coupled to the first transistor and the output terminal of the operational amplifier. The fourth transistor is coupled to the second transistor, the output terminal of the operational amplifier and the ground terminal. The first resistor is utilized for generating a complementary to absolute temperature voltage according to a voltage difference between a gate-source voltage of the third transistor and a gate-source voltage of the fourth transistor.

Abstract: An oscillator system addresses power supply noise and temperature dependence. The system includes a multi-stage regulator circuit that receives a supply voltage and generates a lower voltage oscillator supply voltage that is less noisy than the supply voltage. A charge pump circuit receives the oscillator supply voltage and the oscillator output signal and supplies the regulator circuit with a boosted voltage. A reference generator circuit supplies a reference signal that is used to determine the oscillator supply voltage. The reference signal varies with temperature and is used to offset the temperature coefficient of the oscillator.

Abstract: An integrated circuit for providing a reference signal to a regulator includes a comparison circuit and a first reference signal adjustor. The comparison circuit is configured to output a control signal based on a difference between levels of a constraint signal of the regulator, such as an input voltage signal or a supply voltage signal, and the reference signal. The regulator has a feedback control loop maintained by the reference signal. The first reference signal adjustor is operatively coupled to the comparison circuit and is configured to adjust the level of the reference signal based on the control signal such that the level of the reference signal increases toward a preset level and does not cause the feedback control loop of the regulator to become saturated when the regulator is in a start-up phase.

Abstract: This invention involves a bandgap reference circuit in IC. The temperature coefficient of conventional bandgap reference is large and the higher order compensation is difficult to implement. This invention provides an adaptive compensated bandgap reference which solves the problem only using lower order (first order) temperature coefficient compensation. The invention adopts segmental compensation circuit to realize adaptive segmental compensation of bandgap reference with low temperature coefficient. The technical solution includes traditional bandgap voltage reference circuit and adaptive feedback compensation circuit which consists of sample and hold circuit, voltage comparator and control module. This invention controls the bandgap voltage reference through systematical view and it has high process compatibility.