Abstract: An adjustable bandgap reference voltage includes a first circuit for generating IPTAT, a second circuit for generating ICTAT, and an output module configured to generate the reference voltage. The first circuit includes a first amplifier connected to terminals of a core for equalizing voltages across the terminals, where the first amplifier has a first stage that is biased by the current inversely proportional to absolute temperature and is arranged according to a folded setup with first PMOS transistors arranged according to a common-gate setup. The first circuit also includes a feedback stage with an input connected to the first amplifier output. The feedback stage output is connected to the first stage input and to a terminal of the core. The second circuit includes a follower amplifier connected to a terminal of the core and separated from the first amplifier and the output module is connected to the feedback stage.

Abstract: A circuit includes a band-gap reference circuit and a start-up circuit. The band-gap reference circuit includes an operational amplifier, a first current path between a power supply node and a reference node, a second current path between the power supply node and the reference node, and a feedback path between an output of the operational amplifier and the first and second current paths. A first input of the operational amplifier is coupled to the first current path, and a second input of the operational amplifier is coupled to the second current path. The start-up circuit includes a current source and at least one switch coupled between the current source and the band-gap reference circuit. The at least one switch is configured to electrically couple the current source with the first and second current paths during a start-up phase.

Abstract: The present application relates to a signal combining apparatus having an input for receiving a signal from a signal generator and an output for outputting a signal to a signal analyzer. The input signal is split into a plurality of identical signals by a splitter and the signals are transmitted, to inputs a plurality of duplex combiners, each of which has an input/output port to which a device under test can be connected. Outputs of the duplex combiners are connected to a plurality of receive paths, whose outputs are connected to a signal relay which is operative to receive one or more signals received through the receive paths. An output of the signal relay is connected to the output of the signal combining apparatus, such that a composite signal output by the signal relay containing the signals received through the receive paths can be analyzed by the signal analyzer.

Abstract: Among other things, techniques and systems are provided to pre-charge a node of a primary circuit, such as a voltage regulator or bandgap voltage reference, via a start-up circuit. The node is charged to a specified voltage during a pre-charge operation that occurs while the primary-circuit is powered-off. The pre-charge operation comprises discharging a voltage from the node during a first portion of the pre-charge operation and re-charging the node to the specified voltage during a second portion of the pre-charge operation. In some embodiments, the specified voltage is substantially equivalent to a switching voltage of a drive transistor of the primary circuit.

Abstract: An integrated circuit includes a variable resistance unit including at least one transistor that receives a control signal and changes a resistance through the transistor in response to the control signal in a programming operation mode and an information detection unit configured to detect programming information in response to an output voltage of the variable resistance unit in a normal operation mode.

Abstract: A voltage trimming circuit of a semiconductor apparatus includes: a first voltage trimming unit configured to trim a first reference voltage having a first characteristic with respect to temperature based on a first trimming signal, and generate a first trimming reference voltage; a second voltage trimming unit configured to trim a second reference voltage having a second characteristic with respect to the temperature based on a second trimming signal, and generate a second trimming reference voltage; and an adjusting unit configured to trim a voltage formed from a potential difference between the first and second trimming reference voltages based on a select signal, and generate a final trimming reference voltage.

Abstract: A circuit for outputting reference voltage includes: a detecting unit, a feedback unit and an output unit which are respectively connected with an external power source, wherein a plurality of field effect transistors (FETs) are provided in the detecting unit, wherein the detecting unit is for detecting foundry corners of the FETs therein, the feedback unit is for feeding back and comparing a detecting result of the detecting unit, and outputting information after feeding back and comparing, and the output unit is for outputting reference voltage corresponding to the foundry corners of the FETs to an external output terminal. The reference voltage outputted by the circuit for outputting reference voltage of the present invention is capable of varying with foundry corners of the FETs, and achieves compensating for foundry corners of the FETs.

Abstract: An integrated temperature sensor provides an output current proportional to temperature rising from a zero value at a selectable reference temperature. The reference temperature can be selected by varying resistive values in the sensor's circuit. The temperature sensor can be manufactured at low cost and fully integrated on a chip using CMOS technology, and may be used for low-power applications.

Abstract: This application discusses apparatus and methods for reducing supply voltage induced band gap voltage variation. In an example, a method of compensating a reference voltage current source for supply voltage variation can include providing at least a portion if a reference current for establishing the reference voltage using a first output transistor coupled to the supply voltage, maintaining a constant voltage across the first output transistor using a second output transistor coupled between the first output transistor and an output node, modulating a compensation impedance between a first node and ground as the supply voltage varies, the first node located where the first output transistor is coupled to the second output transistor, and wherein the modulating includes modulating the compensation impedance to substantially equal an output impedance, the output impedance measured between an output node and an input for the supply voltage.

Abstract: The present invention discloses a bandgap reference circuit. The bandgap reference circuit includes an operational transconductance amplifier, and a reference generation circuit. The operational transconductance amplifier includes a self-biased operational transconductance amplifier, for utilizing an area difference between bipolar junction transistors of an input pair to generate a first positive temperature coefficient current to bias the input pair, and generating a positive temperature coefficient control voltage and a negative temperature coefficient control voltage; and a feedback voltage amplifier, for amplifying the negative temperature coefficient control voltage, and outputting a reference voltage to the input pair for feedback, to generate a first negative temperature coefficient current. The reference generation circuit generates a summation voltage or a summation current according to the positive temperature coefficient control voltage and the negative temperature coefficient control voltage.

Abstract: Power source, in particular for use in a databus in public means of transportation, wherein the power source has a first transistor (T2), and wherein in a normal operating mode of the power source the current (IA) which is conducted through the first transistor (T2) is determined by a first resistor (R3) at the emitter of the first transistor (T2), is characterized with respect to safe operation accompanied by the smallest possible space requirement and lowest possible manufacturing costs in that a temperature-dependent resistor (RV1) is thermally coupled to the first transistor (T2) and that the temperature-dependent transistor (RV1) is connected to the power source in such a way that when the temperature of the first transistor (T2) is rising the temperature-dependent resistor (RV1) influences the voltage across the first resistor (R3) and thereby brings about a reduction in the output current (IA) of the power source.

Abstract: A controller for a power converter and method of operating the same. In one embodiment, the controller includes an inductor-inductor-capacitor (“LLC”) controller configured to receive an error signal from an error amplifier to control a switching frequency of an LLC stage of the power converter to regulate an output voltage thereof. The controller also includes a power factor correction (“PFC”) controller configured to control a bus voltage produced by a PFC stage of the power converter and provided to the LLC stage so that an average switching frequency thereof is substantially maintained at a desired switching frequency.

Abstract: Various embodiments of the present invention relate to a reference voltage generator circuit. Specifically, the circuit may for example comprise: a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch; wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series; and a power supply terminal located between said two second resistive elements on the second branch. A high-precision reference voltage relative to the voltage source can be provided at the power supply terminal by using the circuit provided by various embodiments of the present invention.

Abstract: A bandgap reference voltage generating circuit for providing a reference voltage is disclosed. The bandgap reference voltage generating circuit includes four-terminal current source circuit, a regulator circuit and a temperature-compensating circuit. The four-terminal current source circuit outputs a first voltage, a second voltage and a first current which are independent of variation of a first system voltage. The regulator circuit receives the first voltage and the second voltage and when the first system voltage is larger than a threshold voltage value, the regulator circuit outputs the reference voltage independent of variation of the first system voltage via voltage-difference between the first voltage and the second voltage. The temperature-compensating circuit receives the first current and compensates a temperature curve of the reference voltage outputted from the regulator circuit.

Abstract: A unified bandgap voltage waveform compensation amplifier is arranged having shared input transistor pairs, a shared load resistor, and shared current sources. For example, a first amplifier structure is arranged to produce a negative-going bias correction signal when a bandgap voltage reference increases as operating temperatures rise and a second amplifier structure is arranged to produce a positive-going bias correction signal when the bandgap voltage reference increases as operating temperatures rise. The unified amplifier is arranged to combine the positive-and negative-going signals to generate a combined compensation current that is used to compensate for temperature instability of the bandage voltage reference.

Abstract: The present invention pertains to a voltage reference circuit based on temperature compensation, comprising positive and negative temperature coefficient generating units, temperature compensation circuit, image circuit and voltage divider. In this circuit, Item T is compensated with Item T, and Item T ln(T) is compensated by Item T in (T), which features a well-targeted compensation performance. The circuit outputs a reference voltage with zero temperature coefficient, which is independent to T and T ln (T). The output voltage value could be defined by adjusting the ratio of resistance in voltage divider. The invention provides a voltage reference circuit featuring good compensation, zero temperature coefficient and adjustable output voltage. The invention has a better compensation than the conventional one and a fixed output voltage, and it totally eliminates the temperature coefficient. The invention has wide application in analog IC and digital/analog mixed IC.

Abstract: A system for and method of providing a signal proportional to the absolute temperature of a semiconductor junction is provided. The system comprises: a preprocessing stage configured and arranged so as to process a signal from the semiconductor junction so as to produce a preprocessed signal including a resistance error term; and a temperature to voltage converter stage for converting the preprocessed signal to a voltage proportional to absolute temperature representing the absolute temperature of the semiconductor junction; wherein the system is configured and arranged so as to remove the resistance error term so as to produce a resistance error free signal representative of the semiconductor junction temperature.

Abstract: A curvature-corrected bandgap reference is disclosed. The curvature-corrected bandgap reference comprises a Brokaw bandgap circuit. The Brokaw bandgap circuit includes an output node providing a reference voltage. The Brokaw bandgap circuit further comprising a first BJT device including a first base terminal coupled to the output node and a first emitter terminal. The first BJT device operates at a first current density that is substantially proportional to absolute temperature. The curvature-corrected bandgap reference also includes a second BJT device including a second base terminal coupled to the output node and a second emitter terminal. The second BJT device operates at a second current density that is substantially independent of temperature. Finally the curvature-corrected bandgap reference includes a correction voltage proportional to a voltage difference of the first and second emitter terminals, wherein the correction voltage substantially cancels a curvature of the reference voltage.

Abstract: A circuit and method for a bandgap voltage reference operating at 1 volt or below is disclosed, wherein the operational amplifier (A1) drives resistors (R2, R3) only so that both the flicker noise contribution and the process sensitivity due to the conventional metal oxide semiconductor (MOS) devices used as a current mirror within the proportional-to-absolute-temperature (PTAT) loop are eliminated. Two symmetric resistive divider pairs formed by (R1A/R1B, R2A/R2B) are inserted to scale down both the base-emitter voltages (VEB1, VEB2) of bipolar transistors (Q1, Q2) and the PTAT current (IPTAT) so that an output reference voltage (VREF) becomes scalable. Proper bias currents through transistors (M3, M4), which are used to bias (Q1, Q2) and (R1A/R1B, R2A/R2B) respectively, are produced by an additional V-I converter (319) using VREF itself, resulting in a final process, voltage and temperature (PVT) insensitive output reference voltage.

Abstract: Described is a battery charger circuit for charging a battery. The battery charger circuit comprises a control element having a first input configured to receive an input from a reference source, a second input configured to receive an input from the battery and an output, said control element having an output current response characteristic which varies with respect to the battery input such that said control element implements a saturating function that causes the charging current of the battery to automatically transition between a constant current operating mode and a constant voltage operating mode or a constant voltage operating mode to a constant current operating mode.

Abstract: A method and apparatus for derating current and for derating current for a camera flash. The method comprises monitoring a local junction temperature of a module. The local junction temperature is converted into a local junction current. The local junction current is then compared with a reference current, which is independent of temperature. After the current comparison and subtraction is made, a derate control current is obtained to generate the LED reference current. After the temperature crosses the temperature threshold, the derate control current is derated. Both the temperature threshold and current derate slope are programmable and precisely controlled. The LED output current is regulated and proportional to the LED reference current. If the local junction temperature is greater than the temperature threshold, the LED output current is derated at the moment of the camera flash to avoid thermal overload.

Abstract: Voltage generators may generate a level of a high target voltage with respect to a low external power supply voltage. A reference voltage generator includes a clamp regulator which is driven by a first power supply voltage supplied from an external source and receives a first voltage to generate a clamp voltage, and a level amplifier which is driven by a second power supply voltage that is higher than the first power supply voltage and receives the clamp voltage to generate a reference voltage. The clamp voltage may be set to have a voltage level which results in a successful restore operation with respect to a memory cell array in a dynamic random access memory (DRAM).

Abstract: A reference voltage circuit for generating a reference voltage to be referred when a pixel signal is digitally converted, includes ramp voltage generating means for generating a ramp voltage which drops from a predetermined initial voltage at a certain gradient, a transistor for forming, together with the ramp voltage generating means, a current mirror circuit, and gain change means for changing a current value of a current flowing from a predetermined power supply via the transistor to change the gradient of the ramp voltage generated by the ramp voltage generating means.

Abstract: Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50 nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account.

Abstract: A startup circuit to ensure a bandgap reference circuit reliably starts up or recovers from a noise disturbance is provided. The startup circuit incorporates a pull down resistor to detect the bandgap reference circuit being in a disabled state. The startup circuit creates a positive feedback loop to force the bandgap reference circuit out of a disabled state. Consequently, whenever the power supply for the bandgap reference circuit sags or if bandgap output collapses, the output of the bandgap circuit reliably ramps back up to the expected level.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: Provided is a reference voltage generator having flat temperature characteristics. The reference voltage generator includes a depletion MOS transistor (5) of a first conductivity type connected so as to function as a current source and configured to cause a constant current to flow, and a depletion MOS transistor (6) of the first conductivity type that is diode-connected to the depletion MOS transistor (5), has the same buried channel and temperature characteristics as those of the depletion MOS transistor (5), and is configured to generate a reference voltage based on the constant current. The depletion MOS transistor (5) and the depletion MOS transistor (6) have the same temperature characteristics, and hence temperature characteristics of an output from the reference voltage generator become flat.

Abstract: A low voltage bandgap reference circuit includes a positive temperature coefficient circuit unit, a negative temperature coefficient circuit unit and a load unit, wherein the positive temperature coefficient circuit unit comprises a first differential operational amplifier, a first, second and third transistor, a first resistor, a first and second diode, and the negative temperature coefficient circuit unit includes a second differential operational amplifier, a fourth, fifth and sixth transistor, a second resistor and a third diode. The low voltage bandgap reference circuit provides a current having a positive temperature coefficient characteristics and a current having a negative temperature coefficient characteristics to flow through the load in order to generate a stable reference voltage less affected by the temperature. Therefore, it avoids the problems of the low voltage bandgap reference circuit that can not be activated at low voltage.

Abstract: The present invention relates to a voltage bandgap buffer apparatus. This apparatus includes a voltage processing module to produce a bandgap buffer voltage in response to an input voltage and a feedback signal and a symmetry circuit. This symmetry circuit is coupled to the voltage processing module for producing the feedback signal and for regulating the feedback signal in response to the input voltage.

Abstract: Embodiments may include a method, system and apparatus for providing a reference voltage supply. A series resistor is provided between a power supply and a bandgap circuit coupled to an amplifier. A shunt transistor circuit is operatively coupled to the series resistor. A programmable output voltage is provided based upon the shunt transistor circuit and a first value of the series resistor.

Abstract: A current source circuit with temperature compensation includes a power supply terminal, a reference current source unit connected to the power supply terminal, a feedback control unit connected to the power supply terminal and the reference current source unit, a current source generating unit connected to the feedback control unit and a ground terminal connected to the current source generating unit. The reference current source unit is a current source connected to the power supply terminal. The feedback control unit includes a first switching element, connected to the current source, and an inverting amplifier, connected between the current source and the first switching element. The current source generating unit includes a second switching element, connected to the first switching element, the current source and the inverting amplifier, and a first resistor, connected to the first and the second switching elements and the ground terminal.

Abstract: Disclosed is a current and voltage detection circuit comprising: a voltage input terminal to which a direct current voltage is applied; a voltage comparison circuit that determines which of the applied voltage and a predetermined voltage is larger; a switching element connected in series to a current-voltage conversion unit, between a positive electrode terminal of the power supply and a reference potential point of the circuit; and a control circuit that generates a control signal of the switching element in response to output of the voltage comparison circuit, wherein the circuit turns ON the switching element and determines the voltage, by the voltage comparison circuit, when a voltage supply capability or current supply capability is low; and turns OFF the switching element by the control signal and determines the voltage, when the voltage comparison circuit determines that the voltage is higher than the predetermined voltage.

Abstract: A transmission line driver and a method for driving the same are provided, in which a composite current source is provided as an input current source, such that an output voltage is fixed. The composite current source includes an internal current source and an external current source. The composite current source is supplied to a single-ended transmission line driver or a differential transmission line driver, such that the output voltage is fixed.

Abstract: Provided is a constant current circuit in which an enhancement N-channel transistor can operate in a weak-inversion state even at high temperatures. A constant current circuit includes a current mirror circuit, a constant-current generation block circuit, and an off-leak circuit, wherein the off-leak circuit is constituted by a first enhancement N-channel transistor having a gate and a source connected to an earth terminal and a drain connected to an output of the constant current circuit. This suppresses an increase in a gate-to-source voltage of the enhancement N-channel transistor which generates a constant current, thereby maintaining its operation in a weak-inversion state.

Abstract: In a semiconductor device in which a reference voltage is generated by a reference voltage generation circuit, and the same reference voltage generated is used in a plurality of circuit units for the purpose of generating a voltage, a sampling and holding circuit of the reference voltage is provided in order to provide a standard voltage to the circuit units. A sampling and holding control circuit that controls the sampling and holding circuit instructs the sampling and holding circuit to perform a sampling operation of the reference voltage in case that the semiconductor device operates in a state where power supply noise of the reference voltage generation circuit falls within a predetermined range, and instructs the sampling and holding circuit to perform a holding operation of the reference voltage in case that the semiconductor device operates in a state where the power supply noise exceeds the predetermined range.

Abstract: A method adjusts a reference voltage of an electronic circuit based on a band-gap voltage supplied by a first band-gap stage. The band-gap stage includes in a series arrangement, between two terminals of a voltage supply source, a current source connected to a first branch, which includes a first configurable resistor in series with a first diode, and to a second branch, which includes a second configurable resistor connected to a complementary resistor in series with a second diode. The band-gap voltage is supplied to a connection node between the current source and each branch. The current source is a PMOS transistor controlled by an output voltage of a first operational amplifier of a current control loop.

Abstract: An integrated circuit includes an operational circuit module receiving a supply voltage from a voltage regulator external to the integrated circuit, and an adaptive voltage scaling module to adjust the supply voltage based on performance characteristics of the operational circuit module. The adaptive voltage scaling module can include a performance monitoring module disposed on the integrated circuit and configured to generate at least an indicator corresponding to at least one performance characteristic of the operational circuit module. The adaptive scaling module can include a voltage requirement determination and voltage feedback generator module disposed on the integrated circuit and coupled to the performance monitoring module. The voltage requirement determination and voltage feedback generator module is configured to output a feedback voltage signal having a voltage level as a function of at least the indicator.

Abstract: A device includes a proportional-to-absolute-temperature (PTAT) current source having a bandgap reference voltage node, and a negative temperature dynamic load having an input terminal electrically connected to the bandgap reference voltage node.

Abstract: A circuit including a current source, an inverter, and a device. The current source is configured to receive a first reference voltage and supply an output current. The inverter has a transconductance. The inverter includes a first transistor having a source and a drain and a second transistor having a source. The source of the first transistor is connected to the current source. The source of the first transistor is configured to receive a portion of the output current. The source of the second transistor is connected to the drain of the first transistor. The device is configured to select the first reference voltage such that the output current of the current source varies with changes in a temperature of the current source to maintain the transconductance of the inverter at a same value and prevent changes in respective transition frequencies of both the first transistor and the second transistor.

Abstract: An embodiment of an arrangement includes a voltage regulator configured to provide an output voltage, said voltage regulator configured to receive one of a plurality of different regulator reference voltages and a controller configured to provide a selection signal, said selection signal being used to control which of said regulator reference voltages said voltage regulator receives.

Abstract: An adjustable bandgap reference voltage includes a first circuit for generating IPTAT, a second circuit for generating ICTAT, and an output module configured to generate the reference voltage. The first circuit includes a first amplifier connected to terminals of a core for equalizing voltages across the terminals, where the first amplifier has a first stage that is biased by the current inversely proportional to absolute temperature and is arranged according to a folded setup with first PMOS transistors arranged according to a common-gate setup. The first circuit also includes a feedback stage with an input connected to the first amplifier output. The feedback stage output is connected to the first stage input and to a terminal of the core. The second circuit includes a follower amplifier connected to a terminal of the core and separated from the first amplifier and the output module is connected to the feedback stage.

Abstract: Exemplary embodiments are related to current generators. A device may include a first integration path for charging a first integration capacitor during a first phase and a second integration path for charging a second integration capacitor during a second phase. The first integration capacitor may be configured for charging a capacitor coupled to an amplifier during the second phase and the second integration capacitor may be configured for charging the capacitor during the first phase.

Abstract: Disclosed is bandgap voltage reference generator having a programmable resistor. The programmable resistor can be programmed to provide a proper ratio between the PTAT current and the CTAT current to reduce the effect of process variations on the bandgap voltage. The bandgap voltage reference generator includes a calibration circuit that programs the programmable resistor.

Abstract: Provided is a reference voltage generation circuit that has a flat temperature characteristic even when there are fluctuations in manufacturing step. After a semiconductor manufacturing process is finished, electrical characteristics of a semiconductor device are evaluated. Temperature characteristic of each reference voltage (VREF) of three unit reference voltage generation circuits (10) is evaluated. Then only a unit reference voltage generation circuit (10) having the most flat temperature characteristics is selected from among the three unit reference voltage generation circuits (10). Only fuses (13, 14) of the selected unit reference voltage generation circuit (10) are not cut, but other fuses (13, 14) are cut. Accordingly only the selected unit reference voltage generation circuit (10) operates, and the other unit reference voltage generation circuits (10) do not operate.

Abstract: According to an embodiment, generating an adjustable bandgap reference voltage includes generating a current proportional to absolute temperature (PTAT). Generating the PTAT current includes equalizing voltages across the terminals of a core that is designed to be traversed by the PTAT current. Generating the adjustable bandgap reference also includes generating a current inversely proportional to absolute temperature (CTAT), summing the PTAT and the CTAT currents and generating the bandgap reference voltage based on the sum of the currents. Equalizing includes connecting-across the terminals of the core a first fed-back amplifier with at least one first stage arranged as a folded setup and including first PMOS transistors arranged according to a common-gate setup. Equalizing also includes biasing the first stage based on the CTAT current. The summation of the PTAT and CTAT currents is performed in the feedback stage of the first amplifier.

Abstract: A band-gap reference circuit is compensated for temperature dependent curvature in its output. A voltage across a diode with a fixed current is subtracted from a voltage across a diode with a proportional to absolute temperature (PTAT) current. The resultant voltage is then magnified and added to a PTAT voltage and a diode's voltage that has a complementary-to-absolute temperature (CTAT) characteristic, resulting in a curvature corrected hand-gap voltage. This allows for the band-gap reference circuit to be trimmed at a single temperature. This allows the circuit to be made with only a single trimmable parameter, which, in the exemplary circuits, is a resistance value.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A bandgap voltage reference circuit comprising: a first P-N junction circuit generating a first voltage which changes according to a first characteristic; a second P-N junction circuit generating a second voltage which changes according to a second characteristic different from the first characteristic; an amplifier receiving the first and second voltages at a pair of input terminals and changing the amount of an output current provided from a high-voltage power supply to an output terminal according to a difference voltage between the first and second voltages, wherein an output voltage at the output terminal is provided to the first and second P-N junction circuits; and an output current controller causing the amplifier to provide the output current to the output terminal regardless of the difference voltage when the output voltage equals to or is smaller than a threshold voltage.

Abstract: A switching regulator circuit and a reference compensation module employed for compensating a reference signal in the switching regulator circuit. The switching regulator circuit with a reference ground having an average offset voltage referenced to a package ground pin, wherein the average offset voltage is proportional to an output current of the switching regulator circuit with a first factor. The reference compensation module may be configured to receive a second reference signal having a bandgap reference voltage with respect to the reference ground and a reference compensation signal proportional to the output current with a second factor, and configured to provide the first reference signal based on compensating the second reference signal with the reference compensation signal to substantially cancel out the average offset voltage from the first reference signal with respect to the ground pin.

Abstract: Provided is a reference voltage circuit capable of adjusting an arbitrary output voltage to have arbitrary temperature characteristics. The reference voltage circuit includes: a reference current generating circuit configured to convert a difference between forward voltages of a plurality of PN junction elements into current to generate a first current; a current generating circuit configured to use the first current generated by the reference current generating circuit to generate a second current; and a voltage generating circuit including a first resistive element and a second resistive element, the first resistive element being configured to generate a first voltage having positive temperature characteristics when the first current flows through the first resistive element, the second resistive element being configured to generate a second voltage having negative temperature characteristics when the first current and the second current flow through the second resistive element.