Abstract: A method of testing integrated circuits, including establishing at least a first physical communication channel between a test equipment and an integrated circuit under test by having at least a first probe of the test equipment contacting a corresponding physical contact terminal of the integrated circuit under test; having the test equipment and the integrated circuit under test exchange, over said first physical communication channel, at least two signals selected from the group including at least two test stimuli and at least two test response signals, wherein said at least two signals are exchanged by means of at least one modulated carrier wave modulated by the at least two signals.

Abstract: A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location.

Abstract: Embodiments of the present invention provide a circuit and method to characterize the impact of bias temperature instability on semiconductor devices. The circuit comprises a transistor having a gate, drain, source, and body terminal. Two AC pad sets each having a plurality of conductive pads. Two DC pads are in communication with a DC supply and/or meter. The gate terminal is in communication with a first conductive pad included in the plurality of conductive pads of each of the AC pad sets. The drain terminal is in communication with a second conductive pad of an AC pad set and the source terminal with a second conductive pad of another AC pad set. One DC pad is in communication with the gate terminal through a first serial resistor and another DC pad with the body terminal through a second serial resistor and provides an open-circuit for the gate and body terminals.

Abstract: Techniques for using a speed measurement circuit to measure speed of an integrated circuit. The speed measurement circuit includes a ring oscillator and a counter circuit. The ring oscillator includes an AND gate with an inverting input and a non-inverting input. The ring oscillator also includes a programmable interconnect point context (PIP-context) having a first programmable interconnect point (PIP), a first interconnect, a second PIP, and a second interconnect coupled in series. The ring oscillator also includes a third interconnect and a third PIP coupled in series with the PIP-context and with an inverting input of the AND gate. The counter circuit is coupled to an output of the AND gate and configured in the programmable integrated circuit.

Abstract: Systems, methods, and computer readable media to improve image stabilization operations and other image processing operations are described. A novel combination of interleaved image capture and image processing operations, e.g., image registration operations, may be employed on a bracketed capture of still images. Such techniques may result in improved camera performance and processing efficiency, as well as decreased shot-to-shot time intervals. In another embodiment, an image fusion portion of an image post-processing pipeline may also be performed in an interleaved fashion, such that each image in the sequence of obtained bracketed images may be incrementally added to an output composite image after it has been aligned with the preceding image or images from the sequence.

Abstract: At least one method, apparatus and system disclosed herein involves forming a device comprising a transistor comprising an active gate and at least one inactive gate in parallel to the active gate. A source region on a substrate is formed. An active gate region is formed on the substrate adjacent the source region. A drain region is formed on the substrate adjacent the active gate region. A first inactive gate region is formed on the substrate in parallel to the active gate region. The source region, the drain region, the active gate region, and the first inactive gate region comprise the transistor. The first inactive gate region is capable of dissipating the at least a portion of a charge.

Abstract: A serializer/deserializer for communicating with an integrated circuit. The serializer/deserializer includes a serializer configured to serialize, from a parallel format into a serial format, first data to be transferred from an external device to the integrated circuit. The external device is configured to perform testing on the integrated circuit. A deserializer is configured to deserialize, from the serial format into the parallel format, second data to be transferred from the integrated circuit to the external device. A test access port module is configured to receive, from a test interface arranged between the serializer/deserializer and the external device, third data for controlling the serializer and provide, to the test interface, fourth data associated with control of the test interface. The fourth data corresponds to the deserialization of the second data to be transferred from the integrated circuit to the external device.

Abstract: An integrated test circuit, including a plurality of test structure elements, wherein each test structure element includes at least a supply line and a test line; a plurality of select transistors, wherein each select transistor is assigned to one corresponding test structure element, and wherein each select transistor includes a first controlled region, a second controlled region, and a control region, wherein the second controlled region of each select transistor is respectively connected to the supply line of the corresponding test structure element, so that each select transistor is unambiguously assigned to the corresponding test structure element; and a plurality of contact pads, connected to respective first controlled regions and control regions of the plurality of select transistors, such that each test structure element of the plurality of test structure elements can be individually addressed by the plurality of contact pads.

Abstract: Provided is an apparatus for testing a semiconductor device. The apparatus includes a plurality of testing pads. The apparatus includes a plurality of testing units. The apparatus includes a switching circuit coupled between the testing pads and the testing units. The switching circuit contains a plurality of switching devices. The apparatus includes a control circuit coupled to the switching circuit. The control circuit is operable to establish electrical coupling between a selected testing unit and one or more of the testing pads by selectively activating a subset of the switching devices.

Abstract: An integrated circuit can include a plurality of drive monitoring sections, each including at least one transistor under test (TUT) having a source coupled to a first power supply node, a gate coupled to receive a start indication, and a drain coupled to a monitor node, at least one monitor capacitor coupled to the monitor node, and a timing circuit configured to generate a monitor value corresponding to a rate at which the TUT can transfer current between the monitor node and the first power supply node; and a body bias circuit configured to apply a body bias voltage to at least one body region in which at least one transistor is formed; wherein the body bias voltage is generated in response to at least a plurality of the monitor values.

Abstract: Aspects of the disclosure provide an integrated circuit. The integrated circuit includes a memory array, a ring oscillator and a speed determination circuit. The memory array is defined by a plurality of memory cells that are based on a memory cell design. The ring oscillator has a plurality of inversion stages formed of a plurality of modified memory cells based on the memory cell design. The speed determination circuit is configured to determine a speed of the ring oscillator.

Abstract: System and method for diagnosing failures within an integrated circuit is provided. In an embodiment, the apparatus includes a diagnostic cell coupled in series with a buffer chain. The diagnostic cell includes a plurality of logic operators that when activated invert a signal received from the buffer chain. The inversion of the signal from the buffer chain allows the diagnostic cell to determine the location of a failure within an integrated circuit previously determined by a scan chain design for test methodology to contain a failure.

Abstract: A semiconductor device includes an interface chip including: an internal data terminal, and a timing data storage circuit configured to output a plurality of timing set signals, and a plurality of core chips stacked with one another, each of the core chips including a plurality of memory cells, an output control circuit coupled to the timing data storage circuit of the interface chip, the output control circuit being configured to receive a corresponding one of the timing set signals and to output an output timing signal in response to the corresponding one of the timing set signals, and a data output circuit coupled to the internal data terminal of the interface chip, the data output circuit being configured to output data in response to the output timing signal, the data being derived from a corresponding one of the memory cells.

Abstract: An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.

Abstract: A product discriminating device that includes a measuring section, a discriminating unit, a deemed standard deviation calculation unit, a re-discriminating unit, a rank estimated number calculation unit, and a standard deviation calculation unit. The standard deviation calculation unit changes variables of a probability distribution of a deemed standard deviation such that the number of products belonging to at least one of a predetermined plurality of ranks re-discriminated at least once and an estimated number of the products belonging to the rank in a rank estimated number calculation unit substantially match each other, and calculates the changed variables as a standard deviation of characteristic value variation of the products and a standard deviation of measurement value variation.

Abstract: A semiconductor device includes a substrate, a first land formed in a first surface of the substrate, a second land formed in a second surface of the substrate, a first terminal coupled to the second land, a line coupled to the first land and the second land, a second terminal formed in the second surface of the substrate and a branch line coupled to the line and the second terminal. The second terminal is coupled to the first land and the second land and is not coupled to other lands in the first surface. The second surface is different surface from the first surface.

Abstract: Testing a digital-to-analog converter (DAC), where the test is carried out iteratively for a plurality of digital test signal values, includes: providing the digital test signal to a DAC under test and to a servo; providing, by the DAC under test to a summer, an analog test signal, including converting the digital test signal to the analog test signal; providing, by the summer to an observation latch, a summed signal, including summing the analog test signal and an analog offset signal, the analog offset signal received from a second DAC; providing, by the observation latch to the servo, a sample of the summed signal; providing, by the servo to the second DAC in dependence upon the sample and the digital test signal, a digital offset signal, where the second DAC converts the digital offset signal to the analog offset signal; and storing, as a digital observation, the digital offset signal.

Abstract: The wafer inspection interface 18 includes a probe card 20 having a multiple number of probes 25; a fixing ring 21 configured to hold the probe card 20; a chuck top 23 disposed to face the probe card 20 with a wafer W therebetween; an outer seal ring 24 provided to hermetically seal an outer space 27 surrounded by the fixing ring 21, the probe card 20 and the chuck top 23; an outer depressurization path 29 through which the outer space 27 is depressurized; an inner seal ring 26 provided to hermetically seal an inner space 28 surrounded by the probe card 20 and the wafer W; and an inner depressurization path 30 through which the inner space 28 is depressurized. Further, the inner space 28 may be surrounded by the outer space 27, and the wafer W is disposed within the inner space 28.

Abstract: The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.

Abstract: A semiconductor integrated circuit includes a plurality of dies, wherein each of the dies is configured to enable a power circuit provided therein according to a power control signal, in a state in which the die was determined to be a good die or a fail die.

Abstract: Aspects of an apparatus for characterizing an integrated circuit device are provided. The apparatus includes a first connection circuit configured to selectively couple at least one terminal of the integrated circuit device to a termination circuit for AC loopback and a second connection circuit configured to selectively couple the at least one terminal of the integrated circuit device to a test resource for DC characterization. In another aspect, an apparatus for characterizing an integrated circuit is provided. The apparatus includes a board configured to couple to the integrated circuit and a resource to characterize the integrated circuit. The board includes means for detecting physical misalignment of the board and the resource to characterize the integrated circuit.

Abstract: An integrated circuit is disclosed. The integrated circuit includes input and output pads, a first integrated circuit portion having first circuitry, and a second integrated circuit portion having second circuitry different from the first circuitry. The first integrated circuit portion is configured to provide an input test signal from the input pad to the second integrated circuit portion, and provide an output test signal from the second integrated circuit portion to the output pad, the output test signal being generated by second integrated circuit portion in response to the input test signal.

Abstract: An integrated circuit (IC) structure can include a first die and a second die. The second die can include a first base unit and a second base unit. Each of the first base unit and the second base unit is self-contained and no signals pass between the first base unit and the second base unit within the second die. The IC structure can include an interposer. The interposer includes a first plurality of inter-die wires coupling the first die to the first base unit, a second plurality of inter-die wires coupling the first die to the second base unit, and a third plurality of inter-die wires coupling the first base unit to the second base unit.

Abstract: A test system is provided. A printed circuit board (PCB) includes a plurality of traces and at least one test point. A central processing unit (CPU) socket including a plurality of first pins and a memory module slot including a plurality of second pins are disposed on the PCB. Each of the second pins is coupled to the corresponding first pin of the CPU socket via the corresponding trace. A CPU interposer board is inserted into the CPU socket, and a memory interposer board is inserted into the memory module slot. The traces form a test loop via the CPU interposer board and the memory interposer board. When an automatic test equipment (ATE) provides a test signal to the test loop via the test point, the ATE determines whether the test loop is normal according to a reflectometry result of the test signal.

Abstract: A device for performing timing analysis used in a programmable logic array system is provided. The device comprises first and second basic I/O terminals, a channel multiplexer, high-speed I/O terminals, a sampling module and a timing analysis module. The first basic I/O terminals receive under-test signals from an under-test unit. The channel multiplexer receives the under-test signals from the first basic I/O terminals to select at least a group of the under-test signals to be outputted to the second basic I/O terminals. The high-speed I/O terminals has a logic level analyzing speed higher than that of the first and second basic I/O terminals. The sampling module receives the group of under-test signals from the high-speed I/O terminals and samples the group of under-test signals to generate a sample result. The timing analysis module performs timing analysis and measurement according to the sample result.

Abstract: A test controller applies test stimulus signals to the input pads of plural die on a wafer in parallel. The test controller also applies encoded test response signals to the output pads of the plural die in parallel. The encoded test response signals are decoded on the die and compared to core test response signals produced from applying the test stimulus signals to core circuits on the die. The comparison produces pass/fail signals that are loaded in to scan cells of an IEEE 1149.1 scan path. The pass/fail signals then may be scanned out of the die to determine the results of the test.

Abstract: A method of testing a packaged semiconductor device under test (DUT) including a leadframe having a plurality of pins and at least one thermal pad with a semiconductor die having topside bond pads wire-bonded by bond wires to the plurality of pins and secured to the thermal pad. A leadframe sheet is provided including a plurality of packaged DUTs including support members that connect to the packaged DUTs. The thermal pads are shorted to one another, and the leadframe sheet is trimmed for electrically isolating the pins from one another. A first electrical contact is provided to the thermal pad. Active pins of the plurality of pins are electrically contacted with a contactor. Automatic testing identifies shorts between the active pins and the thermal pad.

Abstract: A semiconductor integrated circuit includes a test bump pad, a first bump pad coupled to a first through-silicon-via (TSV), a second bump pad coupled to a second TSV, a latching unit, coupled between the test bump pad and the first bump pad, suitable for storing data, and a switching unit suitable for selectively coupling the first bump pad to the second bump pad in response to a test operation control signal.

Abstract: An assembly and circuit structure for measuring current through an integrated circuit (IC) module device is disclosed. The circuit structure includes a power supply, at least one IC module device, at least one amplifier, and a resistive washer. The power supply can be configured to generate direct or alternating current. The at least one IC module device having a pair of terminals can be configured to receive the generated current. The at least one amplifier can be configured to measure the amount of current that flows through the IC module device. The at least one amplifier may be electrically coupled to a resistor. Also, a resistive washer may be configured to oppose current flow through the at least one IC module so as to redirect current to flow through the resistor.

Abstract: Disclosed herein is a device that includes: external terminals; a first chip including a first control circuit that generates a first control signal; and a second chip stacked with the first chip. The second chip includes: a first test terminal supplied with a first test signal and being free from connecting to any one of the external terminals; a second test terminal supplied with the first test signal and coupled to one of the external terminals without connecting to any one of control circuits of the first chip; a first normal terminal supplied with the first control signal and coupled to another of the external terminals with an intervention of the first control circuit of the first chip; and a first selection circuit including first input node coupled in common to the first and second test terminals and the second input node coupled to the first normal terminal.

Abstract: The present invention provides an LED chip testing device that measures characteristics of an LED chip. The LED chip testing device includes: a rotation member that supports the LED chip and rotates the LED chip to a testing position where the characteristics of the LED chip are tested; and a tester installed next to the rotation member and serving to measure the characteristics of the LED chip at the testing position.

Abstract: Methods and apparatus are disclosed to simultaneously, wirelessly test semiconductor components formed on a semiconductor wafer. The semiconductor components transmit respective outcomes of a self-contained testing operation to wireless automatic test equipment via a common communication channel. Multiple receiving antennas observe the outcomes from multiple directions in three dimensional space. The wireless automatic test equipment determines whether one or more of the semiconductor components operate as expected and, optionally, may use properties of the three dimensional space to determine a location of one or more of the semiconductor components. The wireless testing equipment may additionally determine performance of the semiconductor components by detecting infrared energy emitted, transmitted, and/or reflected by the semiconductor wafer before, during, and/or after a self-contained testing operation.

Abstract: The Configurable Vertical Integration [CVI] invention pertains to methods and apparatus for the enhancement of yields of 3D or stacked integrated circuits and herein referred to as a CVI Integrated Circuit [CVI IC]. The CVI methods require no testing of circuit layer components prior to their fabrication as part of a 3D integrated circuit. The CVI invention uses active circuitry to configure the CVI IC as a means to isolate or prevent the use of defective circuitry. CVI circuit configuration method can be predominately described as a large grain method.

Abstract: Diagnostic tools for testing integrated circuit (IC) devices, and a method of making the same. The first diagnostic tool includes a first compliant printed circuit with a plurality of contact pads configured to form an electrical interconnect at a first interface between proximal ends of contact members in the socket and contact pads on a printed circuit board (PCB). A plurality of printed conductive traces electrically couple to a plurality of the contact pads on the first compliant printed circuit. A plurality of electrical devices are printed on the first compliant printed circuit at a location external to the first interface. The electrical devices are electrically coupled to the conductive traces and programmed to provide one or more of continuity testing at the first interface or functionality of the IC devices. A second diagnostic tool includes a second compliant printed circuit electrically coupled to a surrogate IC device.

Abstract: A method for scan-testing of an integrated circuit includes the following steps carried out by the circuit itself: upon powering on of the circuit, watching for bit sequences applied to a use pin configured for receiving serial data from the exterior at the rate of a clock signal applied to a clock pin; configuring the circuit in a test mode when a bit sequence is identified as a test initialization sequence; connecting latches of the circuit in a shift register configuration, and connecting the shift register for receiving a test vector in series from the use pin; switching the transfer direction of the use pin to the output mode for providing to the exterior serial data at the rate of the clock signal; and connecting the shift register for providing its content, as a test result set, in series on the use pin.

Abstract: A semiconductor device comprises a plurality of output pads bondable to an output pin, a plurality of reference pads bondable to a reference pin, and output driver circuitry with a control terminal for receiving a control signal and arranged to drive the plurality of output pads relative to the plurality of reference pads in dependence on the control signal. The output driver circuitry includes driver sections and selection circuitry. Each driver section is arranged to drive an output pad relative to the single reference pad in dependence on a respective section control signal. The reference pads are connected in a one-to-one relationship to the driver sections. The output pads are connected in a one-to-one relationship to the driver sections. The selection circuitry provides the respective section control signals to the driver sections in dependence on at least one selection signal and the control signal.

Abstract: A power semiconductor module includes a power electronics circuit and a measuring circuit for measuring a physical parameter occurring in the power electronics circuit and for providing a corresponding measurement signal. A transmission circuit is coupled to a secondary side of a transfer unit, and an evaluation circuit is coupled to the primary side and galvanically isolated from the transmission circuit by the transfer unit. The evaluation circuit supplies an AC voltage to the primary side, causing primary current to flow on the primary side, which in turn results in secondary current on the secondary side, the secondary current being supplied to the transmission circuit. The transmission circuit receives the measurement signal and modulates the secondary current in accordance with the measurement signal, which results in a modulation of the primary current. The evaluation circuit evaluates the modulation of the primary current and generates an output signal dependent thereon.

Abstract: Diagnostic tools for testing wafer-level IC devices, and a method of making the same. The first diagnostic tool can include a first compliant printed circuit with a plurality of contact pads configured to form an electrical interconnect at a first interface between distal ends of probe members in the wafer probe and contact pads on a wafer-level IC device. A plurality of printed conductive traces electrically couple to a plurality of the contact pads on the first compliant printed circuit. A plurality of electrical devices are printed on the first compliant printed circuit at a location away from the first interface. The electrical devices are electrically coupled to the conductive traces and are configured to provide one or more of continuity testing or functionality of the wafer-level IC devices. A second diagnostic tool includes a second compliant printed circuit electrically coupled to a dedicated IC testing device.

Abstract: Embodiments related to electrically characterizing a semiconductor device are provided. In one example, a method for characterizing a pin of a semiconductor device is provided, the method comprising providing a test pattern to the semiconductor device. Further, the method includes adjusting a selected electrical state of a pin of the semiconductor device and measuring a value for a dependent electrical state of the pin responsive to the selected electrical state. The example method also includes generating an electrical characterization for the pin by correlating the dependent electrical state with the selected electrical state and outputting the electrical characterization for display.

Abstract: A system for monitoring a connection to an active pin of an integrated circuit (IC) die, includes an input/output (I/O) cell of an IC die, where the I/O cell is bonded to a bonding pad on a ball grid array (BGA) substrate. The system includes a test point on a printed circuit board (PCB) coupled to the bonding pad which forms an electrical/conductive pathway between the test point and the I/O cell. The system includes a clock waveform injected through a resistor into the test point.

Abstract: A clock trimming apparatus includes an oscillator, a judging unit, a latching unit, and a tracking unit. The oscillator has an input terminal receiving a bias signal and an output terminal generating a clock signal. After a frequency division is performed on the clock signal, the judging unit generates a frequency-divided signal. If the frequency-divided signal matches the reference signal, a pass signal generated by the judging unit is activated. The latching unit is used for generating a trimming completion signal. After the pass signal is activated, the trimming completion signal is activated. The tracking unit is used for counting a pulse number of the reference signal and providing the bias signal to the oscillator according to a trimming code. After the trimming completion signal is activated, the trimming code is stopped being adjusted.

Abstract: A bridge fault removal apparatus includes a bridge fault extraction unit configured to extract a bridge fault from layout information of a semiconductor integrated circuit, a test pattern generator configured to generate the test pattern aiming at the bridge fault extracted by the bridge fault extraction unit, a logical value information calculator configured to calculate logical value information of all the signals in the semiconductor integrated circuit by applying the test pattern generated by the test pattern generator to logical connection information of the semiconductor integrated circuit, and a bridge fault remover configured to select an exchange signal candidate for an undetected bridge fault signal corresponding to the test pattern based on the logical value information calculated by the logical value information calculator.

Abstract: Mechanisms are provided for chip (e.g., semiconductor chip) identification (e.g., low cost secure identification). In one example, a method of manufacturing for implementing integrated chip identification is provided. In another example, a method of using a chip with an integrated identification is provided.

Abstract: A test controller applies test stimulus signals to the input pads of plural die on a wafer in parallel. The test controller also applies encoded test response signals to the output pads of the plural die in parallel. The encoded test response signals are decoded on the die and compared to core test response signals produced from applying the test stimulus signals to core circuits on the die. The comparison produces pass/fail signals that are loaded in to scan cells of an IEEE 1149.1 scan path. The pass/fail signals then may be scanned out of the die to determine the results of the test.

Abstract: A semiconductor device and a test apparatus including the same, the semiconductor device including a command distributor receiving a serial command that is synchronized with a first clock signal and converting the serial command into a parallel command, a command decoder receiving the parallel command and generating a pattern sequence based on the parallel command, and a signal generator receiving the pattern sequence and generating operating signals synchronized with a second clock signal, wherein a frequency of the first clock signal is less than a frequency of the second clock signal.

Abstract: Methods and systems for semiconductor testing are disclosed. In one embodiment, devices which are testing too slowly are prevented from completing testing, thereby allowing untested devices to begin testing sooner.

Abstract: A system and method is disclosed for adaptively adjusting a driving strength of a signal between a first and second chip in a 3D architecture/stack. This may be used to adaptively calibrate a chip in a 3D architecture/stack. The system may include a transmission circuit on one chip and a receiver circuit on another chip. Alternatively, the system may include a transmission and receiver circuit on just one chip.

Abstract: Methods and systems to measure a signal on an integrated circuit die. An on-die measurement circuit may measure an on-die signal relative to an off-die generated reference signal, which may include a series of increasing voltage steps. The on-die measurement circuit may continuously compare voltages of the on-die signal and the off-die generated reference signal, and may generate an indication when the off-die reference signal exceeds the on-die signal. The measurement circuit may generate the indication from a voltage source other than the on-die signal to be measured, and/or may generate the indication with a relatively large voltage swing. The indication may be output off-die for evaluation, such as for testing, debugging, characterization, and/or operational monitoring. A unity gain analog buffer may be provided to tap the on-die signal proximate to a node of interest, which may be implemented within the on-die measurement circuit.

Abstract: Method and apparatus for margin testing integrated circuits. The method includes selecting a clock frequency, an operating temperature range and a power supply voltage level for margin testing an integrated circuit wherein one or more of the clock frequency, the operating temperature range and the power supply voltage level is outside of the normal operating conditions of the integrated circuit; applying an asynchronously time varying power supply voltage set to the selected power supply voltage level to the integrated circuit; running the integrated circuit chip at the selected clock frequency and maintaining the integrated circuit within the selected temperature range; applying a continuous test pattern to the integrated circuit; and monitoring the integrated circuit for fails.

Abstract: An electronic package that has an array of pins may be tested for shorts and continuity in a parallel manner. The array of pins are allocated to four or more groups of pins such that each pin in each group is not adjacent to a pin from its own group of pins. One of the groups of pins is tested for continuity while placing a reference voltage level on all of the pins in the other groups of pins. A separate current source is coupled to each pin and a resultant voltage is measured. A short between one of the pins in the first group and a pin in one of the other groups can be detected when the resultant voltage on one of the pins in the first group is approximately equal to the reference voltage. Group-wise testing is repeated until all groups have been tested.