Abstract: In one embodiment, the present invention includes a logic having a first link interface to enable communication with an intellectual property (IP) logic adapted on a single semiconductor die with the logic, where the IP logic includes a second link interface coupled to the first link interface via an on-die interconnect. In this way, the IP logic can be unmodified with respect to a standalone device having the IP logic incorporated therein. Other embodiments are described and claimed.

Abstract: A level shifter circuit is presented that can apply a negative voltage level to non-selected blocks while still being able to drive a high positive level when selected. An exemplary embodiment presents a negative level shifter that is not susceptible to low voltage pfet breakdown. This allows for a high voltage level shifter (transfer gate) that can drive a negative level for unselected blocks and, when enabled for a selected block, can still drive a positive high voltage level. By using a pair of low voltage PMOS device whose n-wells share the same level as other PMOS transistors in the design, layout area can be minimized. The gates of this pair of PMOSs are connected to VSS, thereby preventing these low voltage PMOS devices from thin oxide breakdown.

Abstract: To include a switch transistor inserted between a data bus and an input end of a signal receiving circuit and turned off when a potential of the data bus reaches VPERI?NVth, and an assist transistor that drives the input end of the signal receiving circuit to have VPERI. According to the present invention, because the switch transistor and the assist transistor assist a receiving operation performed by the signal receiving circuit, amplitude of a transferred signal can be reduced without reducing a transfer rate. With this configuration, power consumed by charging or discharging of the data bus can be reduced.

Abstract: A system and method for radiation-tolerant level shifting are disclosed. In some embodiments, an integrated circuit may include a plurality of level shifters, where each of the plurality of level shifters configured receive a same logic level in a first voltage domain and to output candidate logic levels in a second voltage domain, and where at least one of the candidate logic levels subject to being different from another one of the candidate logic levels. The integrated circuit may also include a voting circuit coupled to the plurality of level shifters, where the voting circuit is configured to evaluate the candidate logic levels and output a selected logic level based, at least in part, upon the evaluation.

Abstract: This printed circuit board (12) comprising: a first portion (20) having first electronic components (22) of which the earth electrode is on a first voltage source (14); a second portion (24) having second electronic components (26) of which the earth electrode is on a second voltage source (16); a switched-mode power supply circuit (34) of which one input is connected to the first portion (20) and of which at least one output is connected to the second portion (24), is characterized in that it comprises modification means (36) for modifying a switching frequency of the switched-mode power supply circuit (34) depending on data values (32) to be transmitted between the first portion (20) and the second portion (24), the said data being able to take at least two distinct values.

Abstract: A logical level translator includes a first reference voltage provider, a second reference voltage provider, and a switching circuit. The first reference voltage provider provides a first reference voltage signal with a first logic level to a first connection terminal. The second reference voltage provider provides a second reference voltage signal with a second logic level to a second connection terminal. The switching circuit switches on a connection between the first connection terminal and the second connection terminal when a digital signal input to the first connection terminal or the second connection terminal is a logic high level signal. Then switches off the connection between the first connection terminal and the second connection terminal when the digital signals is a logic low level signal.

Abstract: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

Abstract: A level shifter converts an input signal having an amplitude between a ground and a first power supply voltage into an output signal having an amplitude between the ground and a second power supply voltage. The level shifter includes an input unit, driven by the first power supply voltage, that raises a first pulse signal at a rise of the input signal and raises a second pulse signal having the same polarity as the first pulse signal at a fall of the input signal, and a level shift unit that converts a signal level of the first pulse signal into an amplitude level of the second power supply voltage, and converts a signal level of the second pulse signal into an amplitude level of the second power supply voltage.

Abstract: A voltage level shifter with an input transistor pair, a cross-coupled load chain transistor pair and a pair of current sources, effects reduced power consumption through the use of the cross-coupled load chain transistor pair to minimize the DC current component present in known voltage level shifters. In specific embodiments, feedback elements may be used to minimize delays in signal transitions. A reference voltage that corresponds to a current capability of the input transistor pair may be used to regulate the current sources in the load chain. Changes in a swing of the input signal voltage received by the input transistor pair may be reflected in corresponding changes to the reference voltage. The voltage level shifter may be of particular use in a buffer.

Abstract: A method and circuit for implementing a dual speed level shifter with automatic mode control, and a design structure on which the subject circuit resides are provided. A low speed level shifter and a high speed level shifter are used to provide a wide frequency range of operation. The circuit operates in one of a low speed mode or a high speed mode. The appropriate mode is selected automatically by detecting the frequency of the signal to be level shifted. When the incoming signal is slower than a reference frequency, the low speed level shifter is selected, and when the incoming signal is faster than the reference frequency, the high speed level shifter is selected.

Abstract: A system and method are shown for generation of at least one reference voltage level in a bus system. A reference voltage generator on a current driver includes at least one reference voltage level, at least one control signal, and an active device. The active device is coupled to the at least one control signal, such as a current control signal, and a selected reference voltage of the at least one reference voltage level. The active device is arranged to shift the at least one reference voltage level based on the at least one current control signal such as an equalization signal, a crosstalk signal, or the combination thereof, employed on the current driver.

Abstract: An output buffer includes a level conversion module for generating a first logic signal having a first level range and a second logic signal having a second level range, a pre-driving module composed of low-voltage transistors for generating a first control signal and a second control signal according to the first logic signal and the second logic signal, and an output module for generating an output signal having a third level range according to the first control signal and the second control signal. Each of the first and second level ranges is smaller than the third level range.

Abstract: A device is disclosed herein, which may be used a level-shift circuit. The device includes first, second and third power supply lines supplied respectively with first, second and third power voltages that are different from one another, first and second input terminals and an output terminal, an output circuit coupled to the first power supply line, the first and second input terminals and the output terminal, a first inverter including an input node coupled to the first input terminal and an output node coupled to the second input terminal, a first transistor coupled in series to the first inverter between the second and third power supply lines, the fifth transistor being rendered non-conductive to deactivate the first inverter, and a control circuit configured to prevent the output terminal from being brought into an electrical floating state during deactivation of the first inverter.

Abstract: In an illustrative embodiment, a data interface circuit is provided. The data interface circuit comprises data sources, input blocks, a space switch, output blocks and a multi-core processor. The data interface circuit allows data provided in different voltage ranges and sampling frequencies to be transmitted to the appropriate core in the multi-core processor via the switch. Data conversion elements in the input blocks convert data from the data sources and having varying voltage ranges and sampling frequencies into data having a voltage range and sampling frequency suitable for the space switch. Analogously, data conversion elements in the output blocks convert data from the space switch into data having a voltage range and sampling frequency suitable for the corresponding core in the multi-core processor. In one embodiment, level shifters and FIFO buffers are used in the input blocks and output blocks.

Abstract: Provided is a multilevel voltage driving device and system. The multilevel voltage driving device comprises a level converter, which is provided with an AC signal input terminal for inputting an AC signal, a high level output terminal for outputting a high level, and an intermediate level output terminal for outputting an intermediate level; and a switch selector, which is connected with the high level output terminal and the intermediate level output terminal, and which is provided with a control signal input terminal, for inputting a control signal to alternately select the high level and intermediate level, and an output terminal for outputting the selected level.

Abstract: A lever shifter is provided for receiving a signal in a first voltage domain and providing an output signal in a second voltage domain. The level shifter reduces propagation delay and power consumption by mitigating contention between NFETs and PFETs during signal propagation.

Abstract: An IO buffer module optimized for a wide range of drive levels both in terms of area and performance that includes an IO cell module and at least one IO adder module operatively coupled to said IO cell module for enabling the IO buffer module for the wide range of drive levels. The IO adder module can be added with the IO cell module in a number of different combinations for providing the wide range of drive levels, and the IO buffer module can provide drive solutions from 1 mA to 10 mA or higher, in steps of 0.5 mA drive level.

Abstract: An integrated circuit (IC) system includes a plurality of ICs configured in a stacked voltage domain arrangement such that a low side supply rail of at least one of ICs is common with a high side supply rail of at least another of the ICs; a reversible voltage converter coupled to power rails of each of the plurality of ICs, the reversible voltage converter configured for stabilizing individual voltage domains corresponding to each IC; and one or more data voltage level shifters configured to facilitate data communication between ICs operating in different voltage domains, wherein an input signal of a given logic state corresponding to one voltage in a first voltage domain is shifted to an output signal of the same logic state at another voltage in a second voltage domain.

Abstract: A level shifter includes a first level-switching device and a second level-switching device. The first level-switching device includes a first switch device, a second switch device, a first control switch and a third switch device. The first switch device is for receiving the input voltage and outputting a first voltage. The second switch device is coupled to the first switch device for outputting a first operational voltage as the output voltage according to the first voltage. The first control switch is coupled to the first switch device for receiving the first voltage. The third switch device is coupled between the first control switch and the first operational voltage and controlled by the output voltage. The second level-switching device is coupled to the first level-switching device for receiving the input voltage and accordingly outputting a second operational voltage as the output voltage.

Abstract: A scan driver includes a voltage setting circuit, a counter circuit, a logic circuit, a dynamic decoder, N level shift circuits and N output stage circuits, wherein N is a natural number. The voltage setting circuit sets N voltage signals to a first level. The counter circuit provides count data to the logic circuit, which generates M control signals according to the count data, wherein M is a natural number. The dynamic decoder includes multiple transistors, arranged in N rows, for receiving the respective N voltage signals. The transistors are further arranged in M columns and are controlled by the respective M control signals to determine levels of the N voltage signals. The N level shift circuits lift the levels of the respective N voltage signals, and the N output stage circuits output respective N gate signals based on the N voltage signals whose levels are shifted.

Abstract: A voltage level translator circuit has a digital logic circuit having a digital logic signal, at least one high-voltage capacitor having a first and second connection, wherein one of the first and second connections is electrically coupled to the digital logic signal, and a cross-coupled inverter pair having, the output of at least one inverter of the pair electrically coupled to the other connection of the at least one high-voltage capacitor.

Abstract: A driver circuit includes an output section; a voltage-dividing section configured to divide a first voltage at a coupling point between the output section and a termination resistor; a comparison section configured to compare a voltage difference with one of the first voltage and a second voltage, the voltage difference being a difference between the second voltage at a coupling point between the termination resistor and a transmission path and a third voltage output from the voltage-dividing section; and an adjustment section configured to adjust a voltage division ratio of the voltage-dividing section on the basis of the comparison result obtained in the comparison section.

Abstract: A level shift circuit includes a level shift section for receiving a low potential signal oscillating between a high potential and a ground potential and converting it into a high potential signal oscillating between the high potential and the ground potential, the level shift section being connected to at least a high potential power supply for generating the high potential, a low potential power supply for generating the low potential, and a ground power supply for generating the ground potential, an inverter section for inverting-amplifying the high potential signal from the level shift section, and an N-type MOS transistor for supplying the ground potential to the inverter section, the N-type MOS transistor being connected in series to the inverter section between the high potential power supply and the ground power supply and having its gate electrode connected to the low potential power supply.

Abstract: In one embodiment, the present invention includes a logic having a first link interface to enable communication with an intellectual property (IP) logic adapted on a single semiconductor die with the logic, where the IP logic includes a second link interface coupled to the first link interface via an on-die interconnect. In this way, the IP logic can be unmodified with respect to a standalone device having the IP logic incorporated therein. Other embodiments are described and claimed.

Abstract: A level converter for providing an output signal at a circuit output based on an input signal includes an output coupling circuit formed to provide an output signal based on a first partial output signal and a second partial output signal, a driver circuit formed to provide the second partial output signal such that the second partial output signal is switchable between two different signal levels depending on the state of the input signal, wherein an input of the driver circuit is capacitively coupled to the input of the level converter in order to allow for switching between the signal levels of the second partial output signal by the capacitive coupling in response to a change in the state of the input signal, and a holding circuit formed to keep the state of the second partial output signal constant in case of a constant state of the input signal.

Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.

Abstract: A virtual zero delay unidirectional high voltage logic to low voltage CMOS logic voltage level translator can be achieved using a capacitive voltage divider coupled with the standard protection diodes commonly incorporated in low side logic (e.g. Xilinx Spartan-3E FPGA's). The complete voltage level translator will work equally well on frequencies from DC up to the rated operational frequency of the driver and receiver. Load side parasitic CMOS input capacitance in this case is ironically an asset rather than a liability since it can be used effectively as one element of the capacitive voltage divider. High voltage logic (e.g. 0 to 5V) can thus interface to lower voltage CMOS logic (e.g. 2.5V or 3.3V) with a minimum of additional external components and with virtually zero time delay.

Abstract: Methods and apparatus provide for voltage level shifting with concurrent synchronization. The apparatus includes level shifting logic that in response to a non-level shifted clock signal from a first voltage domain, provides level shifted concurrently synchronous differential data signals in a second voltage domain based on pre-level shifted differential data signals from the first voltage domain. The first voltage domain may be, for example, a core logic voltage domain in which core logic operates. The second voltage domain may be, for example, an input/output (I/O) voltage domain in which an I/O buffer operates. The voltage level of the level shifted concurrently synchronous differential data signals is shifted from the pre-level shifted differential data signals, and the timing of the level shifted concurrently synchronous differential data signals is concurrently referenced to the non-level shifted clock signal.

Abstract: A voltage level shift circuit in which a difference in response characteristic depending on the signal level of an input signal is suppressed. The voltage level shift circuit generates an output signal VOUT having a voltage amplitude different from that of the input signal. An inverter INV2 generates a voltage V1 in the range of VSS to VDDI according to the input signal. An inverter INV3 generates a voltage V2 in the range of VSS to VPERI according to the input signal. An inverter INV4 generates the output signal VOUT according to V1 and V2.

Abstract: In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable.

Abstract: An output stage includes a system input and a system output, a first transistor having a first control input and a first controlled path, and a second transistor having a second control input and a second controlled path. The second controlled path is in series with the first controlled path and the system output. A first current-controlled voltage source has an input that is electrically connected to the system input. The first current-controlled voltage source has an output that is electrically connected to the first control input of the first transistor. A second current-controlled voltage source has an input that is electrically connected to the system input. The second current-controlled voltage source has an output that is electrically connected to the second control input of the second transistor.

Abstract: In one aspect, a level shifter for shifting a voltage level from a first voltage level to a second voltage level and having a predictable power-up state is provided. The level shifter comprises a first input and a second input forming a differential input to receive signals at the first voltage level, a first output and a second output forming a differential output to provide output signals at the second voltage level, and at least one circuit element coupled between the differential input and the differential output to pull the first output to a lower voltage level than the second output during power-up so that the level shifter powers-up in a desired state.

Abstract: A level shifter for a flat panel display device includes: first and second transistors that are different type transistors and serially coupled between first and second power supplies, the second power supply for supplying a lower voltage power than the first power supply; a first capacitor between gate electrodes of the first and second transistors; an input line for a first input signal coupled to the gate electrode of the first or second transistor; a third transistor between a second electrode of the first capacitor and a third power supply, the third transistor having a gate electrode coupled to an input line of a second input signal; and a fourth transistor between the second electrode of the first capacitor and the third transistor, the fourth transistor having first and gate electrodes that are coupled to the second electrode of the first capacitor, such that the fourth transistor is diode-connected.

Abstract: A thin-film logic circuit, which can be fabricated entirely of TFTs of the same conductivity type, includes a logic stage connected to a supply voltage and a level shifter connected to a wider voltage range provided by the supply voltage and ground. The logic circuit produces output signals with full rail-to-rail signal range from ground to the supply voltage and can implement or include a basic logic component such as an inverter, a NAND gate, or a NOR gate or more complicated circuits in which many basic logic components are cascaded together. Such logic circuits can be fabricated directly on flexible structures or large areas such as in flat panel displays.

Abstract: A level-shifting circuit with reduced shoot-through current includes an output circuit comprising high-voltage devices with a pull-up circuit configured for pulling up a voltage on an output signal to a high voltage responsive to a high-side control signal. The output circuit may also include a pull-down circuit configured for pulling down the voltage on the output signal to a low voltage in responsive to a low-side control signal. The level-shifting circuit can also include a high-side inverting buffer operably coupled between an edge-controlled signal and the high-side control signal, and a low-side buffer configured for driving the low-side control signal responsive to an input signal. The level-shifting circuit may also include an edge-control buffer operably coupled between the input signal and the high-side inverting buffer and configured to generate the edge-controlled signal with a slow rise time relative to a fall time.

Abstract: An apparatus is disclosed. In a particular embodiment, the apparatus includes a a dynamic circuit structure that includes a dynamic node coupling a precharge circuit, a discharge circuit, and a gated keeper circuit. The gated keeper circuit is enabled by a signal from a discharge delay tracking circuit.

Abstract: In one embodiment, a power domain isolation interface is disclosed. The interface has a level shifter having a signal input coupled to a first power domain and a memory element. The memory element has a signal input coupled to an output of the level shifter, an output coupled to a second power domain, and a hold enable input, wherein the memory element is configured to hold an input state when the hold enable input becomes asserted.

Abstract: A semiconductor device includes a first input buffer adjusting a logic threshold voltage, a first replica circuit, a first reference voltage generating circuit, and a first comparator circuit. The first replica circuit is identical in circuit configuration to the first input buffer. The first replica circuit has an input and an output connected to the input. The first replica circuit generates the logic threshold voltage as an output voltage. The first reference voltage generating circuit generates a first reference voltage. The first comparator circuit compares the logic threshold voltage as an output voltage of the first replica circuit to the first reference voltage to generate a first threshold adjustment signal. The first comparator circuit supplies the first threshold adjustment signal to the first input buffer and the first replica circuit. The first threshold adjustment signal allows the first input buffer to adjust the logic threshold voltage.

Abstract: A circuit receives an input signal characterized by a first pair of rail voltages and generates in response thereto an output signal characterized by a second pair of rail voltages. The circuit comprises first and second transistors coupled in series between a high reference voltage and a low reference voltage. The input signal drives a control lead of the second transistor. The logical inverse of the input signal drives a control lead of a third transistor, which couples a charge source to the control lead of the first transistor in response thereto in order to turn off the first transistor. The charge source can be either a voltage source or a charged capacitive node. Of importance, the third transistor does not have to overcome contention with other transistors to turn off said first transistor.

Abstract: It is an object of the invention to provide a digital circuit which can operate normally regardless of binary potentials of an input signal. A semiconductor device having a correcting unit and a logic unit wherein the correcting unit includes a capacitor, first and second switches, wherein the first electrode of the capacitor is connected to the input terminal and the second electrode of the capacitor is connected to the gate of the transistor in the logic circuit, wherein the first switch controls the connection between a gate and drain of the transistor and the second switch controls the potential to be supplied to the drain of the transistor is provided.

Abstract: An interface of the present invention includes a first inverter circuit that inverts a logic level of an input signal given to an external input terminal and outputs the inverted logic level, a second inverter circuit that outputs a potential in which a logic level of an output signal of the first inverter circuit is inverted, that is, a potential higher or lower than a logic of an input signal applied to the first inverter circuit by the amount of a predetermined potential, and a feedback path that positive feedbacks an output signal of the second inverter circuit to the external input terminal The interface circuit of the invention positive-feedbacks a potential of the output signal of the second inverter circuit and shifts the potential of the external input terminal in a floating state to an H or L level potential.

Abstract: An improved interface circuit is provided herein for translating a relatively high input voltage into a relatively low output voltage using only low voltage transistors and a single, low voltage power supply. According to one embodiment, the interface circuit includes a power supply, a pair of input transistors with source terminals coupled together for receiving a relatively low voltage from the power supply, and a current sense amplifier with a pair of input terminals, each coupled to a drain terminal of a different one of the pair of input transistors for receiving a pair of differential currents and for generating a pair of differential voltages therefrom.

Abstract: A clock generation circuit for a semiconductor memory apparatus includes an internal clock generation unit that receives a clock and generates an internal clock, and a clock selection unit that selectively outputs the clock or the internal clock in response to a selection signal.

Abstract: A level shift circuit insusceptible to mistaken operations at the time of disengagement of a standby state is disclosed. The level shift circuit includes a level converter circuit 5, a barrier gate circuit 2 and a holding circuit (MMP1, MMP2). The level converter circuit converts a signal level of a circuit operating in a VDD1 system to a signal level of a VDD2 system. The barrier gate circuit is responsive to a standby signal (STBY) to fix input signals (AB, AAB) of the level converter circuit 5 at a LOW level. The holding circuit holds an output of the level converter circuit 5 at a constant voltage when the input signals (AB, AAB) are at the LOW level (FIG. 1).

Abstract: A level shift circuit includes a level shifter, the level shifter configured to receive input signals and generate level-shifted signals by level-shifting the input signals, an output buffer that includes a first sourcing circuit and a first sinking circuit, the first sourcing circuit and the first sinking circuit being connected in series between a first power and a second power, a first buffer coupled between the level shifter and the output buffer, the first buffer configured to buffer the level-shifted signals and provide a first driving signal to the first sourcing circuit, and a second buffer coupled between the level shifter and the output buffer, the second buffer configured to buffer the level-shifted signals and provide a second driving signal to the first sinking circuit.

Abstract: A semiconductor memory apparatus includes non-inversion repeaters that non-invert data and output the inverted data; and inversion repeaters that invert data and output the inverted data. The non-inversion repeaters or the inversion repeaters are arranged on a first data line and a second data line at a predetermined distance, respectively, which are parallel with each other and the most adjacent to each other and the non-inversion repeater or the inversion repeater is arranged at first positions corresponding to the first data line and the second data line, respectively. The non-inversion repeaters are arranged on one of the first data line and the second data line while the inversion repeaters are arranged on the other first data line and the second data line, at second positions except for the first arrangement positions of positions corresponding to the first data line and the second data line, respectively.

Abstract: The serial interface operable, for example, to facilitate high speed differential data transfer between integrated circuits provides level shifting of an incoming data signal using a switched capacitor technique which level shifts the common mode voltage with minimal attenuation and minimal reduction of bandwidths. The serial interface also includes a DC offset correction loop of the input data receiver path. The level shifting circuit operates by sensing the incoming common mode voltage of a differential data signal with a resistor divider and sampling the difference between the measured input common mode voltage and desired input differential voltages generated by a differential DAC in the DC offset correction loop on two small capacitors.

Abstract: A semiconductor device is capable of stably maintaining a voltage level of a shield line, even when a voltage level of an adjacent line is varied. The semiconductor device includes normal lines arranged for transfer of signals, a shield line arranged adjacently to the normal lines, a level shifting circuit for receiving an input signal swinging between a power supply voltage level and a ground voltage level, and shifting the input signal to an output signal swing between the power supply voltage level and a low voltage level lower than the ground voltage level by a predetermined level to output a shifted signal via the shield line, and a signal input unit for transferring the signal provided via the shield line to an output node.

Abstract: A circuit arrangement for shifting a voltage level comprises a data-current converter (2) that is connected to a first connection (K1) and that has an input for feeding a digital input data signal (DIN), a first output for providing a current (I), and also a second output for providing a reference current (I1), and a current-data converter (3) that is connected to a second connection (K2) and that has a first input for feeding the current (I), a second input for feeding the reference current (I1), and also an output for providing a digital output data signal (DOUT). Here, a voltage level of the digital output data signal (DOUT) is different from a voltage level of the digital input data signal (DIN). In addition, a method for shifting a voltage level is provided.

Abstract: A level shifter circuit converts a signal generated by an internal circuit which operates with a first power supply, into a signal by a second power supply having voltage higher than that of the first power supply. The voltages at substrate terminals of two NMOS transistors, to which complementary two signals by the first power supply are input, is boosted to voltage higher than circuit ground potential in a period in which a voltage level of one of the two input signals and a voltage level of an output signal by the second power supply do not coincide with each other.