Abstract: A level shifter for level shifting an input signal from a first level to an output signal having a second level includes an operation range extension portion configured to extend an input range of the level shifter and to generate a first extension control signal in response to the input signal and a second extension control signal in response to an inverted version of the input signal, an output control portion configured to generate an output control signal in response to the input signal, the first extension control signal, and the output signal, and an output portion configured to generate the output signal in response to the inverted version of the input signal, the second extension control signal, and an output control signal.

Abstract: The invention relates to an edge transition detector, and a method of operating an edge transition detector. An integrated circuit includes an edge transition detector for producing an output signal at an output node in response to an input signal. The edge transition detector includes a switch coupled to the output node. The edge transition detector includes a logic device with a first input coupled to the input node and an output coupled to a control terminal of the switch to enable the switch to conduct, thereby effecting a transition of the output signal from a first logic level to a second logic level in response to the input signal. A feedback path is provided from the output node to a second input of the logic device to disable switch conductivity when the output signal completes the logic transition from the first logic level to the second logic level.

Abstract: For raising low voltage levels of a voltage range without over-broadening the voltage range, a first stage voltage level shifting circuit, which is capable of raising an upper bound of its input voltage range, is coupled to a second voltage level shifting circuit, which is capable of raising both an upper bound and a lower bound of its input voltage range. Therefore, a two-stage voltage level shifting module, which is generated by coupling the first voltage level shifting circuit to the second voltage level shifting circuit, is capable of providing appropriate voltages for external I/O devices having different biasing voltage ranges, where an upper bound and a lower bound of each of the provided biasing voltage ranges precisely indicates a digital logic 0 or a digital logic 1 indicated by a digital signal.

Abstract: A level shifting circuit for a semiconductor device comprises a controller, a level shifting portion, and a driving portion. The controller is adapted to level shift a power converting input signal having a first voltage level to generate a pair of control signals having different logic levels from each other. One of the pair of control signals has a second voltage level that is different from the first level. The level shifting portion is adapted to level shift an input signal having the first voltage level to generate a level shifter output signal having the second voltage level or a third voltage level depending on the respective logic levels of the pair of control signals. The driving portion is adapted to drive an output signal with the second or third voltage level based on the voltage level of the level shifter output signal.

Abstract: In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable.

Abstract: A TOP level switch for use in a drive circuit in power-electronic systems having a half-bridge circuit formed by two power switches, a first so-called TOP switch and a second so-called BOT switch, which are arranged connected in series. The TOP level shifter transmits an input signal from drive logic to a TOP driver. In this case, the TOP level shifter is designed as an arrangement of an UP and a DOWN level shifter path, as well as a downstream signal evaluation circuit. In the associated method for transmission of this input signal, the signal evaluation circuit passes an output signal to the TOP driver when either the UP or the DOWN, or both, level shifter paths emit a signal to the respectively associated input of the signal evaluation circuit.

Abstract: A level shift circuit that shifts both the high potential level and the low potential level of an input voltage, a micro actuator and an optical switch using such a level shift circuit are disclosed. A CMOS inverter 11 connected to a +5 V power source and a 0 V power source provides, in response to an input signal, an output voltage whose H level is +5 V and whose L level is 0 V. A single channel MOS inverter 12 connected to a +15 V power source and the 0 V power source provides, in response to the output voltage of the CMOS inverter 11, an output voltage whose H level is +15 V and whose L level is 0 V. A single channel MOS inverter 13 connected to the +15 V power source and a ?15 V power source provides an output voltage whose H level is +15 V and whose L level is ?15 V. The inverter 12 has an NMOS transistor Q4 as a drive element. The inverter 13 has a PMOS transistor Q5 of the opposite conduction type as a drive element.

Abstract: A regulated cascode current source has a current source circuit. A level shifter circuit is coupled to the current source circuit. The level shifter circuit has a circuit for independently controlling a voltage on a cascode node.

Abstract: Receiver circuits using nanotube based switches and logic. Preferably, the circuits are dual-rail (differential). A receiver circuit includes a differential input having a first and second input link, and a differential output having a first and second output link. First, second, third and fourth switching elements each have an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The receiver circuit can sense small voltage inputs and convert them to larger voltage swings.

Abstract: The present invention provides a source driver comprising a shift register, a line buffer for storing a data signal and outputting a buffered data signal, and a level shifter for generating a level-shifted data signal based on the buffered data signal. The line buffer further comprises a charge pump supplying a pumped voltage based on a voltage source and a buffer powered by the pumped voltage and outputting a buffered data signal based on the data signal.

Abstract: A low-power-consumption type semiconductor integrated circuit incorporating a variety of functions and a semiconductor integrated circuit manufacturing method are provided. As an example of a semiconductor integrated circuit, a system LSI 1 has first circuit blocks 41 through 48 that do not include a critical path, second circuit blocks 51 through 54 that include a critical path, first power supply wiring 25 that supplies a first power supply to first circuit blocks 41 through 48, and second power supply wiring 26 that supplies a second power supply of higher voltage than the first power supply to second circuit blocks 51 through 54, with second circuit blocks 51 through 54 being connected to second power supply wiring 26 by means of wiring areas 61 through 64 respectively, and being supplied with the second power supply.

Abstract: A plurality of output drive devices are capable of tolerating an overvoltage produced by an electrical connection with an external device operating in a high-voltage supply realm. The drive devices are capable of sustaining a continuous electrical connection to the elevated voltage levels and produce communications at an output voltage level equal to the supply voltage indigenous to the device. A high-voltage tolerant driver includes a plurality of output drive devices capable of tolerating an overvoltage, sustaining an electrical connection to an elevated voltage level, and producing an output voltage at an indigenous supply level. An initial pullup drive circuit is coupled to the plurality of output drive devices and produces an initial elevated drive voltage to the plurality of output drive devices. A sustain pullup circuit is coupled to the plurality of output drive devices and produces a sustained output voltage at the indigenous supply level.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage supply to an output signal referenced to a second voltage supply includes an input stage for receiving the input signal, the input stage including at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logic state of the input signal, the latch circuit including at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp circuit is connected between the input stage and the latch circuit. The voltage clamp circuit is operative to limit a voltage across the input stage, an amplitude of the voltage across the input stage being controlled as a function of a voltage difference between the first and second voltage supplies.

Abstract: A level shifter circuit for shifting a voltage level of a logic signal from a first voltage to a second voltage, and a design structure on which the subject circuit reside are provided. An input stage operating in a domain of a first voltage supply includes a first inverter receiving an input signal and providing a first inverted signal. An output voltage level shifting stage operating in a domain of a second voltage supply is coupled to the input stage and providing an output signal having a voltage level corresponding to the second voltage supply domain and a logic value corresponding to the input signal. The level shifter circuit enables voltage level shifting a logic signal from a high to a low operating voltage, or from a low to a high operating voltage. The level shifter circuit enables high frequency operation, providing both fast switching and low capacitance.

Abstract: There are provided: a first logic operation circuit which performs a logic operation using a high-amplitude logic signal; a transmission system having a load capacitance; and a low-voltage signal generator which is a step-down level shifter transforming an incoming high-amplitude logic signal from the first logic operation circuit to a low-amplitude logic signal having a lower amplitude than the high-amplitude logic signal for output to the transmission system. In the configuration, the first logic operation circuit operates based on a high-amplitude logic signal, and is therefore free from malfunctions and performs operations at high speed. Further, the transmission system introducing a load capacitance transmits a low-amplitude logic signal and therefore restrains increases in electric power consumption and occurrence of unnecessary radiation.

Abstract: A bus monitoring device includes a detector to detect a signal on the bus. The signal is initiated by one of a plurality of devices coupled to the bus. A clamp circuit is included to clamp the signal to a first predefined level in response to the signal being initiated by a first device of the plurality of devices. A comparator circuit compares the signal and a voltage reference to determine whether the first device initiated the signal.

Abstract: A semiconductor device includes a differential level converter circuit that receives a first signal and outputs a second signal of greater amplitude. The differential level converter has a first MISFET pair for receiving the first signal, a second MISFET pair for enhancing the withstand voltage of the first MISFET pair, and a third MISFET pair with cross-coupled gates for latching the second signal from output. The film thickness of the gate insulating films of the second and third MISFET pairs is made thicker than that of the first MISFET pair, and the threshold voltages of the first and second MISFET pairs are made smaller than that of the third MISFET pair. This level converter circuit operates at high speed even if there is a large difference in the signal amplitude before and after level conversion.

Abstract: Embodiments relate to a level shifter which uses a single voltage source, has an excellent operation characteristic even when a difference between a low voltage and a high voltage is large, and can be easily designed. Embodiments relate to a level shifter for shifting a voltage level between an input terminal connected to a circuit block which operates by a low voltage source and an output terminal connected to a circuit block which operates by a high voltage source. In embodiments, the level shifter may include a pull-up PMOS and a pull-down NMOS, both of which are connected between the high voltage source and ground in the form of an inverter and have an output node connected to the output terminal. The level shifter may include a control node which is connected to inputs of the pull-up and pull-down NMOS in the form of the inverter. The level shifter may have an input gate for connecting the control node to the high voltage source or ground according to a voltage level of the input terminal.

Abstract: A level shifter and a display device having the same are provided. In a level shifter, a first transistor includes a gate electrode receiving a first driving voltage, and a source electrode receiving an input signal through an input terminal. A second transistor includes a drain electrode receiving the first driving voltage, and a source electrode electrically connected to a drain electrode of the first transistor through a first node. A third transistor includes a source electrode receiving a second driving voltage, a drain electrode electrically connected to a gate electrode of the second transistor through a second node, and a gate electrode receiving the input signal. A fourth transistor includes a drain electrode receiving the first driving voltage, a gate electrode electrically connected to the drain electrode of the first transistor through the first node, and a source electrode electrically connected to the drain electrode of the third transistor through the second node.

Abstract: A first inverter circuit comprises a first transistor in which one end of a current path is grounded, and a second transistor in which one end of a current path is connected to the other end of the current path of the first transistor. A first signal is supplied to gates of the first and second transistors. A third transistor is connected between the other end of the current path of the second transistor and a node to which a second voltage higher than the first voltage is supplied. A control signal constituted of one of the ground potential and the second voltage is supplied to a gate of the third transistor behind a change of a first signal. A second signal constituted of one of the ground potential and the second voltage is output from an output terminal of the first inverter circuit.

Abstract: A method and/or a system of control signal synchronization of a scannable storage circuit is disclosed. In one embodiment, a system includes a first circuit to operate based on a first voltage of a first power supply, a second circuit to operate based on a second voltage of a second power supply, a level shifter circuit between the first circuit and the second circuit to translate between the first voltage of the first power supply and the second voltage of the second power supply, and a n-channel metal-oxide semiconductor field-effect transistor (nMOSFET) having a gate input of the second voltage and serially coupled in a fall path of the level shifter circuit to increase a rate of a capacitive discharge such that the rate of a capacitive discharge charge is substantially equal to a rate of a capacitive charge (e.g., the fall delay may also increase a bit because of an extra transistor).

Abstract: An input signal is routed to a first logic one reference signal generator or alternatively routed to a second logic one reference signal generator based at least one a voltage level of the input signal. When the voltage level of the input signal is less than a threshold value, the first logic one reference signal generator selectively generates a first logic one reference signal. When the voltage level of the input signal is greater than or equal to the threshold value, the second logic one reference signal generator alternatively generates a second logic one reference signal. The first and second logic one reference signals may be used to control a first voltage scaling circuit that drives a scaled output signal having a logic one value corresponding to the voltage level of the first logic one reference signal.

Abstract: A level shifter may reduce leakage current and provide firewall protection between circuits of different voltage domains when one voltage domain is in a standby mode. The level shifter may either couple or decouple input circuitry from a reference voltage in response to a firewall enable signal, may translate signals between a first voltage domain and a second voltage domain when the firewall enable signal is deasserted, and may generate an output signal having a predetermined one of either a high or low state when the firewall enable signal is asserted.

Abstract: A current mode logic (CML)-CMOS converter comprises an input stage that is turned on/off by receiving an input voltage from the outside; a voltage control unit that outputs a constant voltage; a first switching unit that is connected to the input stage and the voltage control unit and is turned on/off by the constant voltage applied from the voltage control unit; and a second switching unit that is connected to the input stage and is turned on/off by a signal applied from the input stage.

Abstract: It is an object of the invention to provide a digital circuit which can operate normally regardless of binary potentials of an input signal. A semiconductor device having a correcting unit and a logic unit wherein the correcting unit includes a capacitor, first and second switches, wherein the first electrode of the capacitor is connected to the input terminal and the second electrode of the capacitor is connected to the gate of the transistor in the logic circuit, wherein the first switch controls the connection between a gate and drain of the transistor and the second switch controls the potential to be supplied to the drain of the transistor is provided.

Abstract: A level conversion circuit includes an input buffer receiving an external signal, cascade-connected inverter circuits arranged in rear of the input buffer, and a switching circuit supplying an internal power supply potential to a power supply terminal of the inverter circuit while an input signal input to the inverter circuit changes from low level to high level, and supplying an external power supply potential to the power supply terminal while the input signal changes from the high level to the low level. The difference between a time necessary for the input signal to exceed a threshold of one of the inverter circuits when the input signal changes from the low level to the high level and time necessary for the input signal to exceed the threshold of the inverter circuit when the input signal changes from the high level to the low level can be thereby reduced.

Abstract: A core unit implements a predetermined function. An I/O unit controls input from and output to the outside. The core unit and the I/O unit are subject to independent control for supply of power. When power is turned off in the core unit, a signal output from the I/O unit to the core unit is fixed at a low level, while power is maintained in the I/O unit. A first level shifter and a second level shifter are provided between the core unit and the I/O unit and cancel a difference in power supply voltage level between the units. Power is turned off in the first level shifter and the second level shifter when power is turned off in the core unit.

Abstract: A voltage level shifter apparatus is provided. The voltage level shifter apparatus includes a first dynamic-bias generator, a second dynamic-bias generator, and a level supply circuit. The first dynamic-bias generator dynamically outputs a first bias signal, wherein the level of the first bias signal is determined in accordance with the received input data signal. The second dynamic-bias generator outputs a second bias signal, wherein the level of the second bias signal is determined in accordance with the received input data signal. Besides receiving the input data signal, the level supply circuit is further coupled to the first dynamic-bias generator and the second dynamic-bias generator for receiving the first bias signal and the second bias signal, and generating the output data signal in accordance with the input data signal, the first bias signal, and the second bias signal.

Abstract: A level shifter for use in a dual power supply circuit operating from a VDD power supply and a VDDH power supply greater than the VDD power supply. The level shifter indicates to a status circuit in the VDDH power supply domain that the VDD power supply is enabled. The level shifter detects when the VDD power supply is on and sets an enable signal to the status circuit. The level shifter also detects when the VDD power supply is off and clears the enable signal to the status circuit.

Abstract: A level shifter and a flat panel display comprising the same, with reduced power consumption. The level shifter includes: a first transistor to apply a first voltage to an output terminal in correspondence with a first input signal; a second transistor to apply a second voltage to an output terminal in correspondence with voltage applied between gate and source electrodes thereof; a third transistor to lower the voltage applied between the gate and source electrodes of the second transistor according to the first input signal; and a capacitor to keep the voltage applied between the gate and source electrodes of the second transistor to turn on the second transistor in correspondence with the second input signal.

Abstract: A buffer circuit for reducing leakage current and for protecting circuits from electrostatic discharge (“ESD”). A power supply circuit of an input/output buffer includes a transistor circuit connected to a high-potential power supply, a transistor circuit connected to a low-potential power supply, and a protection circuit connected between the two transistor circuits. The on-resistance of the transistor circuit is small. The transistor circuit generates a reference voltage close to the voltage of the high-potential power supply. The gate and source of the transistor circuits are connected to each other. This significantly reduces leakage current flowing from the reference voltage to the low-potential power supply. The protection circuit has resistance that lowers voltage at a high voltage terminal of the second transistor and reduces current flowing to the second transistor when a great amount of current flows through the first transistor circuit due to the occurrence of ESD.

Abstract: Operation of a logic circuit for performing a desired logic function is scrambled. Logic gates and/or transistors are provided in the logic circuit so that the logic function is performed in at least two different ways. The way in which the logic function is performed is determined by the value of a function selection signal applied to the logic circuit. The function selection signal is random and is applied to the logic circuit, and the function selection signal is refreshed at determined instants for scrambling operation of the logic circuit. For identical data applied at the input of the logic circuit and for different values of the function selection signal, the polarities of certain internal nodes of the logic circuit and/or the current consumption of the logic circuit are not identical.

Abstract: A supply voltage switching circuit for a computer includes a chipset, a first transistor, a second transistor, and a third transistor. The chipset includes a first MOSFET and a second MOSFET. A 5V system voltage and a 5V standby voltage are respectively inputted to sources of the first MOSFET and the second MOSFET. Gates of the first MOSFET and the second MOSFET are respectively coupled to collectors of the second transistor and the third transistor. A base of the first transistor is coupled to a terminal for receiving a control signal from the computer. The 5V standby voltage is inputted to a collector of the first transistor. Bases of the second transistor and the third transistor are coupled to the collector of the first transistor. A 12V system voltage and the 5V standby voltage are respectively inputted to collectors of the second transistor and the third transistor.

Abstract: A level shift circuit includes a capacitor element that has one terminal to which a logic input signal having a first logic amplitude is input; a logic output circuit that includes a first logic inverting circuit having a first logic inversion level with respect to an input terminal thereof connected to the other terminal of the capacitor element; and a second logic inverting circuit having a second logic inversion level with respect to an input terminal thereof connected to the other terminal of the capacitor element, and that inverts a logic output signal having a second logic amplitude when output polarities of the first logic inverting circuit and the second logic inverting circuit coincide with each other; and a third logic inverting circuit whose input and output terminals are connected to the other terminal of the capacitor element and that has a third logic inversion level with respect to the input terminal thereof connected to the other terminal of the capacitor element.

Abstract: A transition detect circuit includes: a first input port referenced to a first supply voltage node and a second input port referenced to a second supply voltage node. The circuit simultaneously monitors both ports for transitions, and once a transition occurs, directly generates the translated control signals at its output. Once a transition occurs at the inputs, the translated control signal is generated at the output within at most two gate delays. The circuit has very low quiescent current.

Abstract: A semiconductor integrated circuit device has an electrically rewritable non-volatile memory that operates with a first power supply, and a second circuit that operates with a second power supply having a voltage lower than the voltage of the first power supply. The second circuit has a gate oxide film which is thinner than the gate oxide file of the electrically rewritable non-volatile memory. A depletion NMOS transistor has a gate connected to the second power supply, a gate oxide film whose thickness is the same as that of the gate oxide film of the electrically rewritable non-volatile memory, and transmits a signal from an output terminal of the electrically rewritable non-volatile memory to an input terminal of the second circuit.

Abstract: An input circuit (200) operating at a predetermined power supply voltage (VPW) can level shift a high voltage input signal (VINHV) from a higher voltage value to the lower power supply voltage (VPW) level. An input circuit (200) can include input transistors (206-0 and 206-1) having a source-follower configuration. A first input transistor (206-0) receives a high voltage input signal (VINHV) and a second input transistor (206-1) receives a reference voltage (VREF), which can both reach levels greater than power supply voltage (VPW). A compare circuit (204) can reduce duty cycle distortion to generate a lower voltage input signal (VINLV). Input circuit (200) can provide level shifting from LVTTL levels to low voltage CMOS levels without the need for multiple power supply voltages.

Abstract: There is provided a CML to CMOS converter comprising two current sources both connected between a first power supply, having a first potential, and a driving node, first and second push-pull drive stages each having a current path connected between a second power supply, having a second potential, and the driving node, and each having a control input for one half of a CML signal and an output node. Each of the two output nodes is connected to the control node of a respective one of the current sources, each current source being connected to decrease the current it supplies to the driving node if the potential of its respective output of the converter moves towards the potential of the first power supply.

Abstract: An integrated circuit includes a first and a second amplifier circuit (10, 20), which are in each case driven by an input signal (Vin) having a high and a low signal level and a reference signal (Vref) having a constant signal level and, on the output side (D11, D21) generate a first control signal (S1) and a second control signal (S2). The control signals (S1, S2) are generated independently of one another and are used to regulate a first controllable resistor (31) and a second controllable resistor (32) of a third amplifier circuit (30). Depending on the resistance value of the first and second controllable resistors (31, 32) of the third amplifier circuit, an output signal (Vout) that is amplified in comparison with the input signal (Vin) can be generated at an output terminal (A). The integrated circuit can be used as an input amplifier of an integrated semiconductor memory and permits an adaptive behavior of the input amplifier with regard to fluctuations of the average absolute input signal level.

Abstract: A voltage level conversion circuit for converting a voltage level of a low voltage system input signal into a voltage level of a high voltage system signal comprises a latch circuit comprising plural high-breakdown-voltage MOS transistors having a high power supply voltage as a breakdown voltage, a first high-breakdown-voltage N channel MOS transistor which discharges one of the latch nodes of the latch circuit, and a second high-breakdown-voltage N channel MOS transistor which discharges the other latch node, and a pulse signal obtained by boosting a low voltage system pulse signal is applied to a gate of the first or second high-breakdown voltage N channel MOS transistor when the input signal transits.

Abstract: The level shifter comprises a coupling block, a PMOS switch, a first PMOS transistor and a second PMOS transistor. The coupling block receives a first signal and a second signal to generate a first control signal and a first reference voltage. The first signal and the second signal are of opposite phases. The PMOS switch is controlled by the first control signal to choose the first reference voltage or a second reference voltage to be a second control signal. The first PMOS transistor is controlled by the first control signal. The second PMOS transistor is controlled by the second control signal. The connection point between the second PMOS transistor and the first PMOS transistor outputs an output signal.

Abstract: A bus switch chip is limited to operating with a power-supply voltage of 1.8 volts relative to a 0-volt ground. Differential bus signals switched through the bus switch chip swing from 2.7 to 3.3 volts, well above the chip's specified power-supply voltage. The bus switch chip is level-shifted by applying a 1.5-volt signal as the chip's ground, and a 3.3-volt signal as its power supply, so the chip's net power supply is within the specification at 1.8 volts. High-Definition Multimedia Interface (HDMI) and Digital Visual Interface (DVI) require that the differential signals are never driven to ground. However, some non-compliant video transmitters drive differential signals to ground when disabled. External pullup resistors or internal pullup transistors in the bus switch chip are added to the bus signals from non-compliant transmitters to pull disabled signals above the 1.5-volt chip ground to prevent damage from signals below the chip's 1.5-volt ground.

Abstract: An apparatus comprising an integrated circuit and a logic portion. The integrated circuit may have a plurality of regions each (i) pre-diffused and configured to be metal-programmed and (ii) configured to connect the integrated circuit to a socket. The logic portion may be implemented on the integrated circuit. The plurality of metal programmable regions are each (i) independently programmable and (ii) located in one of said pre-diffused regions. Each of the metal programmable regions comprises (a) a regulator section configured to generate an operating voltage from a common supply voltage, (b) a logic section configured to implement integrated circuit functions and operate at the operating voltage, and (c) a level shifter configured to shift the operating voltage to an external voltage level.

Abstract: In a voltage-level shifter, an input line is configured to convey an input voltage to be shifted. A pair of transistors is coupled to and is configured to receive the input voltage from the input line. There is a first side and a second side, with each side comprising the following: a low-voltage transistor that is coupled to the pair of transistors, a medium-voltage transistor that is coupled to the low-voltage transistor, a high-voltage transistor that is coupled to the medium-voltage transistor, and an output line, which is coupled to the first and second sides, for providing an output voltage that is higher than the input voltage.

Abstract: A semiconductor device includes insulated and separated transistor elements successively connected to one another between ground potential and a predetermined potential. A transistor element at the GND potential side is a first stage and a transistor element at the predetermined potential side is an n-th stage. Resistance elements or capacitance elements are successively connected to one another in series between the GND potential and the predetermined potential. A resistance or capacitance element at the GND potential side is a first stage and a resistance or capacitance element at the predetermined potential side is an n-th stage. Gate terminals of the transistor elements at the respective stages excluding the transistor element at the first stage are successively connected to connection points. An output is taken from the terminal at the predetermined potential side of the transistor element of the n-th stage.

Abstract: A method and apparatus is provided for a voltage translator for performing a voltage-level translation of a signal. The voltage translator of the present invention includes a first transistor that is coupled to a control signal. The control signal is in a first voltage range. The voltage translator also includes a first one-shot circuit driven by the first transistor. The first one-shot circuit is capable of providing a pulse. The voltage translator also includes a second transistor capable of receiving a complementary signal of the control signal. A first pair and a second pair of transistors are included in the voltage translator. Each pair of transistors is operatively coupled to the first and second transistors. The first and second pairs of transistors are adapted to provide a transition of a signal from a first voltage range to a second voltage range.

Abstract: An input circuit (a first transistor pair) that receives complementary input signals is connected to a latch circuit (a second transistor pair) that converts the amplitude of an input signal into second amplitude higher than first amplitude. A current mirror circuit (a third transistor pair) is disposed between the latch circuit and a high-level power supply line. The current mirror circuit makes a source voltage of the second transistors being turned on lower than the source voltage of the second transistors being turned off. The second transistors being turned on are likely to be turned off although the on-current of corresponding first transistors is low. To the contrary, the second transistors being turned off are likely to be turned on. Accordingly, even when a voltage of a high logic level of an input signal is low, the level conversion circuit can surely operate without malfunction.

Abstract: A circuit for voltage level translation with zero static current is disclosed for interfacing devices at one supply voltage with devices at another supply voltage. The translation is achieved by using a modified current mirror circuit such that the current mirror is effectively turned off when the output reaches a steady state condition.

Abstract: A circuit for shifting a level between two bi-directional signals having different voltage levels. The circuit includes a first analog switch including a first switching control terminal connected to first directional signal stage, a first input terminal connected to a first level of operating voltage, and a first output terminal connected to a second directional signal stage, for performing a switching operation for the first input terminal and the first output terminal based on a state of logic level of a signal from the second directional signal stage.

Abstract: The CML (current mode logic) to CMOS converter with a leakage balancing transistor for jitter reduction includes: a differential input stage; an output stage having a first branch coupled to a first output of the differential input stage and a second branch coupled to a second output of the differential input stage; and a leakage balancing transistor coupled to the first branch of the output stage.