Abstract: When a driving unit (100) charges gate input capacitance (6) of an IGBT (7), the gate input capacitance (6) accumulates electric charges which are accumulated therein when the driving unit (100) discharges the gate input capacitance (6). Therefore, it is possible to reduce the amount of electric charges to be supplied to the gate input capacitance (6) by the driving unit (100) until the charge of the gate input capacitance (6) is completed. As a result, it is possible to reduce the required power capacity of a control power supply (15a). Further, since the electric charges accumulated in the gate input capacitance (6) are effectively used, it is possible to ensure power savings of a semiconductor device.

Abstract: A configuration and a method for the simultaneous switching of transistors connected in series, one from the on state to the off state and the other from the off state to the on state ensures that, when the transistors are switched from the on state to the off state or from the off state to the on state, the gate potential of the transistor that is changed from the off state to the on state by the switching operation changes more slowly than the gate potential of the transistor that is changed from the on state to the off state by the switching operation.

Abstract: Systems for reducing the parasitic effects of a transistor-based switch are provided. In one such system provides a transistor circuit for implementing a switch having reduced parasitic effects. In general, the transistor circuit comprises a first switch node, a second switch node, a third switch node, a transistor device, and a circuit configured to reduce the parasitic characteristics of the transistor device. The first switch node is for connecting to one node of an external circuit. The second switch node is for connecting to a second node of an external circuit. The transistor device is a three-terminal device. The first terminal is connected to the first switch node. The second terminal is connected to the second switch node. The third terminal is for receiving a control signal that operates the transistor circuit as a switch by controlling the electrical connectivity between the first terminal and the second terminal. The third switch node is for receiving the control signal.

Abstract: A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.

Abstract: A method for reducing the time for a partially depleted/silicon-on-insulator (PD/SOI) based circuit to reach a dynamic steady state pre-conditions the PD/SOI-based circuit by initially charging the circuit at a voltage greater than the normal operating voltage. The circuit is then charged at the normal operating voltage after a predetermined amount of time. By pre-conditioning the circuit in this manner, the amount of time required for the PD/SOI transistors of the circuit to reach their dynamic steady state (DSS) condition is shortened.

Abstract: The present invention provides an apparatus for increasing the slew rate. The apparatus for increasing the slew rate comprises an operational amplifier and a push-pull output stage. The present invention is operated under the principle of when there is a big difference between the output signal and the input signal, either the pull-up transistor or the pull-down transistor in the push-pull output stage is ON, so that the pushed or pulled current is provided to a load on the output terminal. When the difference between the output signal and the input signal becomes smaller, the operation of the push-pull output stage stops, and the load on the output terminal is directly driven by the operational amplifier at this time. Since the present invention only deploys an operational amplifier and a push-pull output stage and does not deploy error amplifier, the present invention reduces occupied area and saves consumed power, and also avoids offset voltage and oscillation problems.

Abstract: A digital multiplexer circuit includes an input transmission line structure receiving input signals, multiplexing blocks having input terminals that are successively coupled together by the input transmission line structure, and an output transmission line that successively couples output terminals of the multiplexing blocks and receives output signals from multiplexing blocks.

Abstract: In a circuit arrangement for discharging at least one circuit node, an input and at least one output connectible to the at least one circuit node are provided along with at least one controllable resistor, a capacitor and a diode. A first terminal of the controllable path of the controllable resistor is connected to the output. A second terminal of the controllable path of the controllable resistor is connected to the input. A terminal of the capacitor and a cathode of the diode are connected to a control terminal of the controllable resistor. An anode of the diode is connected to the input. The circuit arrangement requires a very small area in an integrated circuit and enables a very fast discharge of the circuit node.

Abstract: Power available to an amplifier is controlled so that relatively high power is provided during one phase of operation, such as during an interval when slewing could normally occur and relatively low power is provided during another phase. Increased power is provided by switching in parallel current mirrors when power demands are expected to be high, whether or not high power is actually needed in particular interval. A control circuit provides switching of the current mirrors in a way which minimizes disruption of amplifier operation.

Abstract: Transitions (e.g. high to low and/or low to high) associated with operation of the driver are employed to implement control, which can be applied as a pulse in response to an occurrence of the transition. The control operates to speed up the transition at the output of the driver, such as can reduce driver switching times and enable a corresponding increase in data transmission rates.

Abstract: A circuit design of a transistor connected as a diode, in particular to a design able to reduce the threshold voltage of the transistor and equal to the difference of the threshold voltage of the used transistors in the circuit disposal. The circuit design includes a first pMOS transistor having a second nMOS transistor connected as a diode connected between the gate and the drain of the first transistor and a current generator connected to the gates of the two transistors. Such a circuit design is also applicable to a nMOS transistor. From a general point of view the invention is directed to a nMOS or pMOS transistor whose gate voltage is increased (for the nMOS transistors) or decreased (for the pMOS transistors) by using a circuit in series with the gate that provides an appropriate delta of voltage.

Abstract: A semiconductor switching device or amplifier combined in parallel with one or more active devices defined as starter devices. A starter device is used to reduce the terminal voltage of a switching device or amplifier to a dc level below about 0.4 volts which will then allow the switching device to easily change between the on or conducting state and the off or non-conducting state. Three different starter devices are utilized. The first being a Bipolar Junction Transistor (BJT), the second a Metal Oxide Silicon Field Effect Transistor (MOSFET), and the third consisting of three normally off JFETs connected serially. Generally, a single starter device is coupled across the terminals of a semiconductor switching device or amplifier, but it is possible and sometimes advantageous to couple two or more starter devices in parallel. In a first case, a symmetrical, normally off or enhancement mode JFET is used as the switch or amplifier.

Abstract: Power available to an integrator circuit is controlled so that relatively high power is provided during one phase of operation, such as during an interval when slewing in a device is expected and relatively low power is provided during another phase. In one implementation, increased power is provided by switching in parallel current mirrors when power demands are expected to be high, whether or not high power is actually needed in a particular interval. The techniques are particularly useful when applied to clocked integrator circuits.

Abstract: A fast switching device for passing or blocking signals between two input/output ports includes a transistor having a first and a second terminal and a control terminal. The first and second terminals are connected between the two ports. The transistor passes signals between the ports when the transistor is turned on and blocks the passage of signals between the ports when the transistor is turned off. The resistance between the first and second terminals is less than about 10 ohms when the transistor is turned on. The device further includes a driver for controlling the control terminal of the transistor for turning it on or off. Preferably the capacitance between the first or second terminal and a reference potential is less than about 50 pF.

Abstract: A clock buffer circuit having a reduced propagation delay therethrough. The clock buffer circuit has a clock input for receiving an initial clock pulse thereto, and a clock output for transmitting a buffered clock pulse therethrough. A first driver chain arrangement of transistors is coupled with the clock input and the clock output for switching the buffered clock pulse from a low voltage level to a high voltage level. A second driver chain arrangement of transistors is coupled with the clock input and the clock output for switching the buffered clock pulse from the high voltage level to the low voltage level. A holder circuit and a first and trigger circuit for the second driver chain are also included.

Abstract: Techniques and circuits for high speed switching of transistors are provided. These techniques and circuits switch an output device while varying the drive current to the output device in proportion to the output current through the output device. In addition, these techniques and circuits provide a switching circuit with substantially no quiescent currents. This is accomplished by sampling the output current conducted by the output device and using the sample as a signal to drive either the output device fully ON or to switch the output device fully OFF.

Abstract: A balanced switching circuit comprises a plurality of transfer gates, each transfer gate having an input terminal, an output terminal, and at least one control terminal adapted to receive a control signal. Each transfer gate, which may be comprised of pass transistors such as n- and p-channel metal oxide semiconductor (MOS) transistors, is operable to couple the input terminal to the output terminal in response to the control signal. The plurality of transfer gates are arranged in N rows and N columns with the input and output terminals of the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each transfer gate has its control terminal connected to one of N clock terminals adapted to receive respective clock signals. Each clock terminal is coupled to the control terminal of only one transfer gate in each row and only one transfer gate in each column.

Abstract: A semiconductor integrated circuit device with a high switching speed of an internal power source voltage supplied via an operational amplifier, when said internal power source voltage is output from a switching circuit, is provided. As input signal Vin goes from “L” level to “H” level, MOSFET 21 in switching circuit 20 turns on. At this point, upon the rising edge of input signal Vin to the “H” level, a one shot pulse is supplied to the gate of MOSFET 31 from one-shot-pulse generating circuit 32, and MOSFET 31 turns on. As MOSFET 31 turns on, electric potential at the gate of MOSFET 14, which is included in operational amplifier 13, becomes “L” level, MOSFET 14 turns on completely flowing electric current quickly from external power source voltage Vcc to a capacitive load via MOSFET 14 and MOSFET 21, and output voltage Vout of switching circuit 20 climb up with a steeply-rising waveform.

Abstract: A memory device including a balanced switching circuit and methods for controlling an array of transfer gates. The balanced switching circuit comprises a plurality of transfer gates. The plurality of transfer gates are arranged in N rows and N columns with the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each one of N clock terminals is coupled to a respective control terminal of only one transfer gate in each row and only one transfer gate in each column. The transfer gates are selectively clocked or activated in response to clock signals to couple the first signal terminal to the second signal terminal such that the switching speed is independent of the order in which the individual series connected pass transistors or transfer gates are activated.

Abstract: A read circuit for a multibit memory cell is provided to convert a multi-level voltage output from the multibit memory cell into the desired number of binary levels. For example, if the multibit memory cell can be programmed to have four resistance levels, which produce four output voltages respectively, the read circuit is provided with two binary outputs. For additional resistance levels, and corresponding voltage levels, additional binary outputs may be provided.

Abstract: A pre-charging circuit for the output node of an output buffer of an integrated digital system generates a first pulse for enabling the output of new data and a second pulse having a shorter duration than the first pulse for loading the new data in an output data register. The output data register is coupled to the input of the output buffer. A capacitor is connected in parallel to the load capacitance of the output node of the buffer by a pass-gate. The pass-gate is enabled by a pre-charge command corresponding to the logic AND of the second pulse and of the logic XOR of the new data and the data currently present on the output node. A driver is disabled by the first pulse for charging the capacitor to a voltage corresponding to the logic level of data belonging to the group that includes the new data and a logic inversion of the current data.

Abstract: Disclosed is a source follower with Vgs compensation, such that the output voltage precisely follows the input voltage by various arrangements of MOSFET's, switches, and capacitors. In addition, such a source follower that the output voltage precisely follows the input voltage can be implemented without adding too many components. The source follower disclosed in the present invention can be used in the driver circuit for a liquid crystal display (LCD).

Abstract: The present invention relates to a duty cycle adaptive data output buffer of a semiconductor device in which the current driving power of the output buffer is adaptively varied with a duty cycle, to effectively improve noise margin at slow duty cycle. The duty cycle adaptive data output buffer disclosed includes first and second pull-up transistors connected between a power supply voltage and an output terminal; first and second pull-down transistors connected to the output terminal and a ground; duty cycle detector for receiving a duty clock signal, to generate a first control signal at faster duty cycle, and to generate a second control signal at slower duty cycle; a first output driver for driving the first pull-up and pull-down transistors using first and second data signals in response to the first control signal; and a second output driver for driving the second pull-up and pull-down transistors using the first and second data signals in response to the second control signal.

Abstract: Apparatus for opening and closing electrical circuits including one or more normally-open switches and normally-closed switches. A normally-open switch includes at least one MOSFET assembly consisting of a plurality of MOSFETs of different current-carrying capacities connected in parallel and circuitry for turning on the MOSFETs in time sequence. The normally-closed switch includes a pnp bipolar transistor, an npn bipolar transistor, and a circuit for short-circuiting the emitter-base junctions of the two transistors. The base and the collector of the npn transistor are connected respectively to the collector and the base of the pnp transistor. The normally-open and normally-closed switches both include a means for accommodating a current flow in either direction through the switch terminals.

Abstract: An output buffer (100) has a pre-driver circuit (120) for controlling a voltage transition of an output signal from an output driver transistor (150). The pre-driver circuit (120) provides an input that slightly leads the gate voltage of the output driver transistor (150). The pre-driver circuit (120) includes a configurable resistance circuit (480) that provides one resistance value at the start of a signal transition and provides another resistance value near the end of the signal transition. A threshold detector (470) senses a voltage level of the input signal and switches from one resistance value to the other resistance value when the input signal crosses a predetermined voltage.

Abstract: Disclosed is an output driver for driving a universal serial bus. The driver includes a first pull-up circuit, a second pull-up circuit, and a crossover detection circuit. The driver uses the first pull-up circuit to drive the output up to first predetermined voltage. The crossover detection circuit detects the first predetermined voltage and switches to driving the output with the second pull-up circuit. The second pull-up circuit drives output up to a second predetermined target voltage. By driving the output up to only the target voltage using the second pull-up circuit, the likelihood of oscillations about the target voltage can be reduced.

Abstract: Bias circuitry of an electronic circuit is disabled by interrupting a compensated feedback loop in a bias control circuit that, when enabled, produces a predetermined bias voltage (VBIAS+) applied to the bias circuitry. A trickle charging current is conducted into a compensation capacitor of the feedback loop while the bias circuitry is disabled, to charge the compensation capacitor to a predetermined threshold voltage which causes the feedback loop and bias control circuit, when enabled, to produce the predetermined voltage needed by the bias circuitry to bias the CMOS operational amplifier for normal operation. Next, the feedback loop is enabled. Since the compensation capacitor is already precharged to the predetermined voltage, the bias circuitry of the CMOS operational amplifier is very quickly enabled from the disabled condition.

Abstract: A circuit arrangement having at least one electric main switch (T1) with a reference electrode (E), a control electrode (B), and a work electrode (C). A recovery diode (D1; D2) is connected antiparallel to the main flow direction of each main switch (T1). In order to speed up the switch-off process and in particular to reduce the attendant power loss, each main switch (T1) is assigned an electric auxiliary switch (T11; T22), whose work electrode is connected to the control electrode (B) of the associated main switch (T1) and whose reference electrode is connected to the reference electrode (E) of the associated main switch (T1). The capacitor (C11) is disposed between the control electrode of the auxiliary switch (T11; T22) and the work electrode (C) of the associated main switch (T1).

Abstract: In a signal potential conversion circuit of a DRAM, a first P channel MOS transistor for charging a first node is connected in parallel with a second P channel MOS transistor and the second P channel MOS transistor is turned on in a pulse manner in response to a rising edge of an input signal. Further, the first P channel MOS transistor has its current drive ability defined to be approximately one-tenth of that of an N channel MOS transistor for discharging the first node. Accordingly, each of the first node and a second node can be charged and discharged quickly to enable conversion of a signal potential to be accomplished speedily.

Abstract: An improved output driver for HSTL includes a bias control transistor to absorb current leaking through the base-collector capacitance of the drive transistor and maintain the base voltage on the drive transistor. The bias control transistor is biased by a series network coupled between a base of the bias control transistor and ground, which keeps the bias control transistor at a bias near its turn-on bias, with a feedback capacitor coupled between the output and the base of the bias control transistor to turn on the bias control transistor when the output rises.

Abstract: A high frequency bipolar switching transistor circuit. A first bipolar transistor is provided, having an emitter adapted to receive a voltage, having a base adapted to receive a drive current, and having a collector. A second bipolar transistor is provided, having a base connected to the collector of the first bipolar transistor, having a collector connected to the base of the first bipolar transistor, and having an emitter. An inductor having a first port connected to the common connection node of the collector of the first bipolar transistor and the base of the second transistor, and having a second port connected to the emitter of the second transistor. The common connection node of the emitter of the second transistor and the second port of the inductor form the output of the circuit.

Abstract: A signal transition accelerating driver circuit is responsive to an input data signal for driving a signal line in the presence of an enable signal of a high level and to a potential level on the signal line for accelerating the potential change on the signal line in the presence of the enable signal of the low level, wherein the signal transition accelerating driver circuit has a timer responsive to a clock signal for determining an end point of the acceleration, thereby accurately defining a time period for accelerating the potential change.

Abstract: A pre-charging circuit for the output node of an output buffer of an integrated digital system generates a first pulse for enabling the output of new data and a second pulse having a shorter duration than the first pulse for loading the new data in an output data register. The output data register is coupled to the input of the output buffer. A capacitor is connected in parallel to the load capacitance of the output node of the buffer by a pass-gate. The pass-gate is enabled by a pre-charge command corresponding to the logic AND of the second pulse and of the logic XOR of the new data and the data currently present on the output node. A driver is disabled by the first pulse for charging the capacitor to a voltage corresponding to the logic level of data belonging to the group that includes the new data and a logic inversion of the current data.

Abstract: A signal transition accelerating driver circuit for driving a signal line in the presence of an enable signal of a high level and to a potential level on the signal line for accelerating the potential change on the signal line in the presence of the enable signal of the low level, the signal transition accelerating driver circuit has a timer for determining an end point of the acceleration, thereby accurately defining a time period for accelerating the potential change.

Abstract: A high-frequency switch for blocking or transmitting a high frequency input signal. The switch includes a common-base transistor having an emitter, base, and collector, the emitter being connected to an input node and the base being connected to a power rail that is preferably ground. The input node is coupled to the input signal. The present invention utilizes a shunt having a switching element with closed and open states to route the input signal either to the collector of the common-base transistor or to the power rail. The switching element connects the input node to the power rail in the closed state and isolates the input node from the power rail when the switching element is in the open state. The open and closed states are selected by the application of a control signal to the switching element. A bias circuit sets the input node to be at a first bias potential when the switching element is in the open state and a second bias potential when the switching element is in the closed state.

Abstract: A high frequency bipolar switching transistor circuit. A first bipolar transistor is provided, having an emitter adapted to receive a voltage, having a base adapted to receive a drive current, and having a collector. A second bipolar transistor is provided, having a base connected to the collector of the first bipolar transistor, having a collector connected to the base of the first bipolar transistor, and having an emitter. An inductor having a first port connected to the common connection node of the collector of the first bipolar transistor and the base of the second transistor, and having a second port connected to the emitter of the second transistor. The common connection node of the emitter of the second transistor and the second port of the inductor form the output of the circuit.

Abstract: A switching circuit, comprising: a first node for receiving a first voltage; a second node 502 for providing an output; a third node for receiving a second voltage; a capacitance 506 coupled between the second node 502 and the third node; means for intermittently charging the capacitance 506 to provide a first output voltage from the second node 502; and a switch 501 connected between the first node and the second node 502 for isolating the second node 502 from the first node when open and for discharging the capacitance 506 to provide a second output voltage when closed.

Abstract: The present invention relates to an output buffer circuit for transmitting digital signals over a transmission line with pre-emphase. It comprises an output stage and a control circuit. The output stage includes a first impedance circuit connected between an upper power supply potential and an output node. It furthermore includes a second impedance circuit connected between the output node and a power supply node at a lower supply potential. Both impedance circuits receive impedance control signals from the control circuit such that an impedance ratio between the first impedance and the second impedance takes one of at least three different predetermined values in accordance with the present state and the history of a digital data input signal, and such that the sum of the conductance provided by the first impedance circuit and the conductance provided by the second impedance circuit is independent from the generated impedance ratios.

Abstract: A gate control circuit for turning on and off an insulated gate semiconductor device having gate, emitter and collector terminals, including a first DC power source coupled to the gate terminal via a first switch and configured to apply a positive voltage to the gate terminal in order to turn on the insulated gate semiconductor device when the first switch is turned on and the second switch is turned off; a second DC power source coupled to the gate terminal via a second switch and configured to apply a negative voltage to the gate terminal in order to turn off the insulated gate semiconductor device when the second switch is turned on and the first switch is turned off; a parallel circuit of a diode and a capacitor coupled in series to the second switch; and a turn off assist circuit configured to produce a negative charge on the capacitor to assist in turning off the insulated gate semiconductor device.

Abstract: A circuit arrangement which, in accordance with its mode of control, operates either as input circuit or as output circuit and includes a series connection with an inverter stage, a filter stage, a cross-current avoiding stage, a switching-on voltage reducing stage, a switch stage, an output driver stage, and a Miller feedback stage, which are configured in the mode of operation as an output circuit, and parallel thereto a Schmitt trigger and an analog switch that can become effective in the mode of operation as input circuit.

Abstract: A fast high side switch for hard disk drive preamplifiers requires very fast turn on time, very low impedance when the switch is “on” and very high impedance when the switch is turned “off”. Each of the embodiments described provide a low-impedance path between the “Boost Voltage” and “Switch Out” terminals of the hard disk drive preamplifier, i.e., connecting a boost-voltage to the inductor, and as required in such a system, the proposed circuits provide a turn-on time that is much faster than the rise-time of the write current.

Abstract: A predriver for driving an output data buffer at high frequencies includes a data input, a data output, a first voltage pull-up circuit, a first voltage pull-down circuit, a delay circuit and a second voltage pull-down circuit. The first voltage pull-up circuit is coupled to the data output and has a control terminal coupled to the data input. The first voltage pull-down circuit is coupled to the data output and has a control terminal coupled to the data input. The first voltage pull-down circuit, when active, is adapted to at least temporarily hold the data output above a selected voltage. The delay circuit is coupled to the data input. The second voltage pull-down circuit is coupled to the data output and has a control terminal coupled to an output of the delay circuit.

Abstract: In a write driver circuit for switching the direction of a write current passing through a magnetic head or the like having an inductance component, an H-shaped bridge circuit is formed by using four NPN transistors in order to switch the write current at a high speed. Four switching means for controlling the base potentials of the four NPN transistors are provided and two switching means for rapidly decreasing the base potential of one of the two NPN transistors on the power source side, which is turned off when the write current passing through the magnetic head is switched are provided, thereby widening a voltage difference occurring between both terminals of the magnetic head.

Abstract: A semiconductor device is provided which includes a first unipolar transistor provided in a front stage of the device, second unipolar transistor provided in the front stage, and a bipolar transistor provided in a rear stage of the device. In this semiconductor device, drain and the source of the first unipolar transistor are connected to collector and the base of the bipolar transistor, respectively, and drain and the source of the second unipolar transistor are connected to emitter and base of the bipolar transistor, respectively.

Abstract: According to one embodiment, an integrated circuit is disclosed that includes a plurality of functional unit blocks (FUBs), wherein each of the plurality of FUBs further includes a clock gated circuit and a clock gating circuit. The clock gating circuit immediately ungates clock signals to be received at the clock gated circuit whenever the clock gated circuit is to transition from an idle state to a non-idle state. According to a further embodiment, the clock gating circuit also immediately gates the clock signals whenever the clock gated circuit is to transition from a non-idle state to the idle state.

Abstract: A slew rate output circuit includes a switching device connected to an output terminal, a driver circuit connected to the switching device for driving the switching device, and a control circuit connected to the driver circuit for controlling the driver circuit in accordance with an input signal so that, in an initial time period after a change in level of the input signal, the average slew rate is higher than that in a subsequent time period.

Abstract: A fast switching, device for passing or blocking signals between two input/output ports includes a transistor having a first and a second terminal and a control terminal. The first and second terminals are connected between the two ports. The transistor passes signals between the ports when the transistor is turned on and blocks the passage of signals between the ports when the transistor is turned off. The resistance between the first and second terminals is less than about 10 ohms when the transistor is turned on. The device further includes a driver for controlling the control terminal of the transistor for turning it on or off. Preferably the capacitance between the first or second terminal and a reference potential is less than about 50 pF.

Abstract: A data output buffer having an input pad and an output pad, comprising: output driver means for buffering an output of a sense amplifier through the input pad and providing it to the output pad in accordance with a control signal, the output driver means including a pull up driver and a pull down driver; voltage level detection means for receiving data fed back from the output pad and comparing the data and a reference voltage level in accordance with the control signal and a chip select signal; preset signal generation means for receiving the control signal to control an output driver control means; and the output driver control means for receiving output signals received from the voltage level detection means and the preset signal generation means to control the output driver means.

Abstract: An integrated circuit fast transmission switching device is provided which comprises a first input/output lead having a bus capacitance Cb; a second input/output lead having a bus capacitance Cb; a first bidirectional field-effect transistor having an internal resistance Ri and an internal capacitance Ci including a first input/output terminal and a second input/output terminal and a gate terminal, said first terminal being connected to said first lead and said second terminal being connected to said second lead, so as to pass bidirectional external data signals between said first and second leads when said transistor is turned on and so as to block the passage of external data signals between said first and second leads when said transistor is turned off; wherein Ri and Ci for the field-effect transistor are such that Ri(Ci+Cb) is less than 6.

Abstract: An integrated circuit has an output buffer circuit for driving voltage state transitions of a transmission line. An output transistor has a gate terminal for controlling an output voltage of the output transistor, which is applied at an output terminal to the transmission line. (A voltage state transition comprises changing the output voltage from a first state voltage to a second state voltage.) An impulse current driver injects charge into the gate terminal during an impulse phase at the beginning of the voltage state transition to rapidly bring the output transistor through its dead zone to the threshold of its active region. A slewing current driver provides a comparatively limited current to the gate terminal after the impulse phase to cause the output transistor to complete a substantially smooth voltage state transition.