Abstract: A pixel includes a photosensitive circuit, a sense node, a first transistor and a first capacitor. A first electrode of the first capacitor is connected to a control terminal of the first transistor. A second electrode of the first capacitor is to a node of application of a first control signal.

Abstract: An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a first column line, and a row driver configured to control a read operation of the second pixel. A voltage of the first column line is determined based on a higher voltage among a voltage of a floating diffusion node of the first pixel and a voltage of a floating diffusion node of the second pixel during the read operation of the second pixel.

Abstract: Provided is a photoelectric conversion device including: a pixel configured to generate a first signal in accordance with an incident light by photoelectric conversion; an amplifier unit configured to amplify the first signal to output a second signal; and a comparator unit configured to compare a voltage of the second signal with a voltage of a reference signal. A slope of the ramp waveform included in the reference signal can be switched between a first slope ? and a second slope ?, the reference voltage used for determining a setting of a gain in the amplifier unit or the comparator unit can be switched between a first reference voltage Vref1 corresponding to the first slope ? and a second reference voltage Vref2 corresponding to the second slope ?, and ?/??Vref1/Vref2 is satisfied.

Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other.

Abstract: In some embodiments, a method is provided. The method includes forming a plurality of trenches in a semiconductor substrate, where the trenches extend into the semiconductor substrate from a back-side of the semiconductor substrate. An epitaxial layer comprising a dopant is formed on lower surfaces of the trenches, sidewalls of the trenches, and the back-side of the semiconductor substrate, where the dopant has a first doping type. The dopant is driven into the semiconductor substrate to form a first doped region having the first doping type along the epitaxial layer, where the first doped region separates a second doped region having a second doping type opposite the first doping type from the sidewalls of the trenches and from the back-side of the semiconductor substrate. A dielectric layer is formed over the back-side of the semiconductor substrate, where the dielectric layer fill the trenches to form back-side deep trench isolation structures.

Abstract: An image sensor generates first digital samples and second digital samples during respective first and second sampling intervals, the first digital samples including at least one digital sample of each pixel of a first plurality of pixels, and the second digital samples including at least one digital sample of each pixel of a second plurality of pixels. A sum of the first digital samples is accumulated within a first counter as the first sampling interval transpires, and a sum of the second digital samples is accumulated within the first counter as the second sampling interval transpires.

Abstract: An image capturing apparatus comprises a pixel portion in which a plurality of pixels are arranged in a matrix, vertical output lines arranged in such a manner that a plurality of vertical output lines are provided for each pixel column in the pixel portion, each of the plurality of vertical output lines provided for one pixel column being connected to a pixel in different rows within the one pixel column; and a readout circuit configured to, when simultaneously reading out signals of pixels in a plurality of rows within the one pixel column using the plurality of vertical output lines provided within the one pixel column, continuously read out same signals multiple times with respect to at least a pixel in one row among the pixels in the plurality of rows.

Abstract: A pixel includes an integration capacitor coupled between a system voltage and a pump voltage source and having a first side and a second side. The pixel can be operated to have a large full well by: storing charge from a photo-current source in the integration capacitor; reading out the integration capacitor; resetting the integration capacitor by connecting the capacitor to a column line through a select transistor; while resetting, setting the pump voltage source to the system voltage; and after resetting, setting the pump voltage to ground to create a negative voltage between the integration capacitor and column line.

Abstract: An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.

Abstract: An image sensor is disclosed. The image sensor includes: a pixel circuit in a first die, the pixel circuit including a pixel for sensing an incident light to generate a result; and a correlated double sampling (CDS) readout circuit in a second die different from the first die; wherein the first die is coupled to the second die, and the result sensed by the pixel circuit is read out by the CDS readout circuit. A semiconductor structure is also disclosed. The semiconductor structure includes: said image sensor, wherein the first die is stacked on the second die; and an interconnector between the first die and the second die, the interconnector electrically connecting the pixel circuit and the CDS readout circuit.

Abstract: A CMOS image sensor includes a substrate and at least one device isolation region in the substrate and defining first and second pixel regions and first and second active portions in each of the first and second pixel regions. A reset and select transistor gates are disposed in the first pixel region, while a source follower transistor gate is disposed in the second pixel region, such that pixels in the first and second pixel regions share the reset, select and source follower transistors. A length of the source follower transistor gate may be greater than lengths of the reset and selection transistor gates.

Abstract: An image-capturing element manufacturing method includes: preparing a first substrate having a plurality of pixels that are two-dimensionally continuously arrayed; preparing a second substrate having a plurality of circuit blocks that respectively have connection terminals to a power supply and a reference potential and that are electrically independent from each other, each of the plurality of circuit blocks having at least some of circuits to read out signals from the plurality of pixels; laminating the first substrate and the second substrate to electrically couple the plurality of circuit blocks and the plurality of pixels overlapping therewith; and cutting circuit blocks around at least one of the plurality of circuit blocks and pixels overlapping therewith to form a laminate in which the plurality of pixels are laminated onto the at least one of the plurality of circuit blocks.

Abstract: High dynamic range (HDR) images are generated on the basis of a plurality of images obtained by non-destructive reading of an image sensor, called NDRO images. An HDR image generation method includes: the determination of a criterion of desired quality for the HDR image; at least two non-destructive readings of the sensor delivering at least two successive NDRO images; the selection, as a function of the criterion of desired quality, of the first and of the last NDRO image to be used to generate the HDR image; the generation of the HDR image on the basis of information extracted from a series of successive NDRO images starting with the first and terminating with the last NDRO image to be used; the storage of a single image at one and the same time throughout the entire HDR generation phase.

Abstract: An image processing apparatus includes a processing unit, a setting acquisition unit, an environment acquisition unit, and an output unit. The processing unit is configured to perform image processing on an input image. The setting acquisition unit is configured to acquire information indicating a setting of the image processing on an image with a predetermined dynamic range. The environment acquisition unit is configured to acquire information indicating a display environment in which the image is displayed during the image processing. The output unit is configured to output at least the information indicating the setting and the information indicating the display environment in association with the image having undergone the image processing. The processing unit, the setting acquisition unit, the environment acquisition unit, and the output unit are implemented via at least one processor.

Abstract: An image capturing apparatus comprises an image sensor in which a plurality of pixels are arranged two-dimensionally, wherein each of the pixels have a photoelectric conversion portion, a holding portion that holds a charge obtained by the photoelectric conversion portion, an amplification portion that outputs a signal based on a charge outputted from the holding portion, a first transfer switch that transfers the charge from the photoelectric conversion portion to the holding portion, and a second transfer switch that transfers the charge from the holding portion to the amplification portion; and a controller that controls a number of times that the first transfer switch is turned on in relation to the second transfer switch being turned on one time.

Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.

Abstract: A sensor device comprising a computational memory and electronic circuitry. The sensor device is configured to receive an input signal, to compress the input signal into a compressed signal and to compute a reconstructed signal from the compressed signal. The electronic circuitry is configured to perform a reconstruction algorithm to compute the reconstructed signal. The computational memory is configured to compute the compressed signal and partial results of the reconstruction algorithm. A related method and a related design structure may be provided.

Abstract: A liquid crystal display is provided. A liquid crystal display comprising: an insulating substrate, a plurality of pixels disposed on the insulating substrate, and a display area in which the pixels are arranged in rows and columns, wherein four pixels arranged successively in a row direction form a domain pattern, and the domain pattern is repeated in the row direction and a column direction in the display area, wherein each pixel in first and second rows of the domain pattern has a first domain orientation, and each pixel in third and fourth rows of the domain pattern has a second domain orientation that is different from the first domain orientation.

Abstract: A display panel includes a substrate layer and an organic light-emitting display layer located above a side of the substrate layer. The organic light-emitting display layer includes a plurality of sub-pixels. The display panel also includes a light-shielding conductive layer located above a side of the substrate layer adjacent to the organic light-emitting display layer. The light-shielding conductive layer includes a plurality of small imaging apertures, and an orthographic projection of each small imaging aperture on the organic light-emitting display layer is at least partially located between adjacent sub-pixels. The display panel also includes a photosensitive device layer located below a side of the light-shielding conductive layer away from a light-emitting surface of the display panel. The display panel also includes a power signal layer electrically connected to the light-shielding conductive layer.

Abstract: The present application discloses an imaging camera, including: a lens holder with an accommodation space; a lens unit group received in the accommodation space; and a supporting frame. The supporting frame includes a top wall having a first surface facing an object side of the imaging camera, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The imaging camera further includes an aperture formed in the third surface; a glue-in opening formed in the first surface; and a glue-out opening formed in the third surface and communicated with the glue-in opening. By virtue of the invention, the pressing ring can be affixed to the lens holder by the glue flowing from the glue-in opening to the glue-out opening via the first and second channels.

Abstract: An image sensing device includes a pixel array; a plurality of lines coupled to the pixel array; a readout circuit coupled to the plurality of lines and structured to output a readout reset signal and a readout data; first readout lines coupled to the readout circuit and structured to transfer readout reset signals and readout data signals; a global counter coupled to count the readout reset signals and the readout data signals; a first storing circuit coupled to the first readout lines to receive the readout reset signals and the readout data signals; a line control circuit coupled to the first storing circuit; second readout lines coupled to the line control circuit and structured to transfer the readout control signals received from the line control circuit; and a second storing circuit coupled to the second readout lines to receive the readout control signals.

Abstract: There is provided a lens array and an lens array capable of suitably preventing irregular brightness without reducing resolution. A microlens array 20 of a screen 2 includes upper-level microlenses 21H and lower-level microlenses 21L which are formed on the incidence surface of the screen 2, which have the same effective diameter, and which have a structure that generates an optical path length difference ? in transmission light. By disposing the upper-level microlenses 21H and the lower-level microlenses 21L at an interval based on the effective diameter, the basic periodic structure of a lens period PL is formed. Further, the upper-level microlenses 21H and the lower-level microlenses 21L form a basic block comprising a combination of the lenses having a structure that generates the optical path length difference. A concave-and-convex period PC based on the basic block is an integer multiple of the lens period PL.

Abstract: An image sensor is provided. The image sensor may include; an optical detection device layer including a plurality of optical detection devices; a filter array layer including a plurality of color filters and at least one infrared filter, and disposed on the optical detection device layer; and a plurality of beam splitters disposed in a plurality of pixels, the plurality of pixels being in contact with an infrared ray pixel including the at least one infrared ray color filter, and that are configured to change a direction of an infrared ray component of incident light towards the infrared ray pixel.

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A wiring is disposed above operating regions of plural unit transistors arranged on a substrate in a first direction. An insulating film is disposed on the wiring. A cavity entirely overlapping with the wiring as viewed from above is formed in the insulating film. A metal member electrically connected to the wiring via the cavity is disposed on the insulating film. The centroid of the cavity is displaced from that of the operating region of the corresponding unit transistor in the first direction. When the cavity having a centroid the closest to the operating region of a unit transistor is defined as the closest proximity cavity, the amount of deviation of the centroid of the closest proximity cavity from that of the operating region of the corresponding unit transistor in the first direction becomes greater from the center to the ends of the arrangement direction of the unit transistors.

Abstract: A low-power image sensor includes a plurality of light-sensitive pixel cells, a plurality of analog-to-digital converters (ADCs) and image processing circuitry. The image sensor can be disposed in multiple semiconductor layers such that the pixel cells are disposed in a first layer and various other components are disposed in the second layer or between the first layer and the second layer. The image sensor is configured such that the analog output of a pixel cell is sampled by a first ADC and a second ADC within respective first and second dynamic ranges, the second dynamic range being greater than the first dynamic range. The first ADC and the second ADC sample the analog output with different sampling resolutions. The digital outputs of the first ADC and the second ADC are subsequently used by an image processor to generate a pixel value for an image frame.

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.

Abstract: An image sensor having a plurality of pixels along a first direction includes: a first pixel having a first photoelectric conversion unit that generates an electric charge through photoelectric conversion and a reflecting portion disposed at least in a part of an area located in the first direction relative to a center of the first photoelectric conversion unit, which reflects part of light having been transmitted through the first photoelectric conversion unit toward the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that generates an electric charge through photoelectric conversion and a second reflecting portion disposed at least in a part of an area located in a direction opposite from the first direction relative to a center of the second photoelectric conversion unit, which reflects part of light having been transmitted through the second photoelectric conversion unit toward the second photoelectric conversion unit.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: An image capturing apparatus includes: a focus detection unit configured to perform focus detection based on a phase difference between a plurality of image signals obtained by photo-electrically converting light beams that respectively pass through different partial pupil regions of an imaging optical system; an image blur correction unit configured to correct image blur of an object image by driving an optical member for image blur correction; and a determination unit configured to determine reliability of a focus detection result detected by the focus detection unit based on information regarding a focus detection area with respect to which the focus detection unit performs focus detection, and information regarding vignetting that occurs in light beams that pass through the imaging optical system as a result of the image blur correction unit correcting the image blur.

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

Abstract: The present disclosure relates to a solid-state imaging element capable of suppressing an occurrence of image breakup in imaging of a moving subject, a solid-state imaging element operation method, an imaging apparatus, and an electronic device. Pixel signals of G pixels (including Gb and Gr pixels) defined as a reference of a luminance value among pixels of images captured by an imaging element are simultaneously scanned to undergo analog-to-digital conversion in an order not causing stagnation in a predetermined direction of analog-to-digital conversion, and at this time, R and B pixels other than the pixels defined as the reference of the luminance value undergo analog-to-digital conversion by simultaneous scan of pixels in the vicinity of the G pixels defined as the reference of the luminance value that undergo analog-to-digital conversion. The present disclosure can be applied to an imaging apparatus.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

Abstract: In some embodiments, a method is provided. The method includes forming a plurality of trenches in a semiconductor substrate, where the trenches extend into the semiconductor substrate from a back-side of the semiconductor substrate. An epitaxial layer comprising a dopant is formed on lower surfaces of the trenches, sidewalls of the trenches, and the back-side of the semiconductor substrate, where the dopant has a first doping type. The dopant is driven into the semiconductor substrate to form a first doped region having the first doping type along the epitaxial layer, where the first doped region separates a second doped region having a second doping type opposite the first doping type from the sidewalls of the trenches and from the back-side of the semiconductor substrate. A dielectric layer is formed over the back-side of the semiconductor substrate, where the dielectric layer fill the trenches to form back-side deep trench isolation structures.

Abstract: An A/D conversion device includes a phase-difference clock generation unit configured to use a plurality of phase interpolators to generate multi-phase clock signals, of which phases are shifted with respect to an input clock signal, from the input clock signal and a signal obtained by delaying the input clock signal; and an A/D conversion unit configured to perform A/D conversion on an input analog signal using the multi-phase clock signals generated by the phase-difference clock generation unit.

Abstract: A solid-state imaging device includes a first detection pixel and a second detection pixel, each of the first detection pixel and the second detection pixel including a transfer transistor and an amplifier transistor connected to the transfer transistor via a first node, a voltage supply unit that supplies a predetermined voltage, and a connection switch connected between the voltage supply unit and a second node at which the transfer transistor of the first detection pixel and the transfer transistor of the second detection pixel are connected.

Abstract: The present invention discloses a distance measurement method and apparatus, and an unmanned aerial vehicle using same. According to the distance measurement method and apparatus, and the unmanned aerial vehicle provided in embodiments of the present invention, foreground and background segmentation is performed on two neighboring frames of images, and edge feature extraction is performed by using enlarged regions of interest (ROIs) to obtain measurement changes of the images. By means of the measurement changes of the images, remote-distance obstacle avoidance in an extreme condition can be implemented, and problems such as poor stereo matching precision or unavailability of stereo matching in extreme cases such as no texture, low textures, and dense and repeated textures are resolved.

Abstract: An optical imaging module, including a circuit assembly and a lens assembly, is provided. The circuit assembly includes a base, a circuit substrate, image sensor elements, conductors, and a multi-lens frame. The image sensor elements are disposed in the accommodation space of the base. The conductors are disposed between circuit contacts of the circuit substrate and image contacts of the image sensor elements. The multi-lens frame can be integrally formed and covered on the circuit substrate and the image sensor elements. The lens assembly includes a lens base, a fixed lens assembly, an auto lens assembly, and a drive assembly. The lens base is disposed on the multi-lens frame. Each of the auto lens assembly and the fixed lens assembly has lenses having refractive power. The driving assembly drives the auto lens assembly to move in the direction of the normal line of the sensing surface.

Abstract: A distance measurement device including a pixel array and a cover layer is provided. The cover layer is covered on the pixel array. The cover layer includes a first cover pattern covering on a first area of a plurality of first pixels and a second cover pattern covering on a second area of a plurality of second pixels. The first area and the second area are rectangles of mirror symmetry along a first direction.

Abstract: Various image acquisition control methods and apparatuses, and various image acquisition devices are disclosed. One of the image acquisition control methods comprises: acquiring target pixel density distribution information of an image to be acquired; adjusting pixel density distribution of an image sensor according to the target pixel density distribution information; and acquiring the image to be acquired according to the adjusted image sensor. Technical solutions provided can fully utilize integral pixels of an image sensor to achieve differentiated resolution of different displayed regions of an acquired image, improve efficiency of image acquisition, and/or better satisfy diversified application demands of a user.

Abstract: A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node.

Abstract: An imaging apparatus includes a pixel array, a first adder, a second adder, a first A/D converter circuit, and a second A/D converter circuit. The pixel array includes a plurality of pairs of first pixels and second pixels. Each pair of the first pixel and the second pixel receives a light flux passing through a photography optical system by pupil-dividing the light flux. The first adder adds outputs of the first pixels and outputs of the second pixels. The second adder generates a first output by adding the outputs of the first pixels and generates a second output by adding the outputs of the second pixels. The first A/D converter circuit converts an output of the first adder to a digital signal. The second A/D converter circuit converts an output of the second adder to a digital signal.

Abstract: A method of Light-based Communication (LCom) using camera frame-rate based light modulation is provided. The method includes receiving light having modulated light properties that vary at a first frequency from a LCom-enabled luminaire by an image capture device using a global shutter image capture process, comparing light properties received at the image capture device over sequential image capture instances, and determining, from the compared light properties, data encoded by the modulated light.

Abstract: The present technology relates to an image sensor, an electronic apparatus, a comparator, and a drive method which enable achievement of a noise reduction while maintaining high speed of AD conversion. An ADC for performing AD conversion for an electrical signal output from a pixel includes a comparator that compares the electrical signal and a reference signal, a level of which is changed and a counter that counts time necessary for a change of the reference signal to a coincidence of the electrical signal and the reference signal on the basis of output signals from the comparator. The comparator includes a differential amplifier that outputs a comparison result signal indicating a comparison result obtained by comparing the electrical signal and the reference signal and a plurality of output amplifiers that outputs signals obtained by amplifying the comparison result signal output from the differential amplifier as the output signals at different timings.

Abstract: An image sensor included in a camera system comprises: a plurality of photodiodes for processing optical signals which have passed through a lens included in the camera system; and at least one mask, disposed on the top of at least one photodiode among the plurality of photodiodes, for enabling the optical signals which have passed through an inner region of the lens included in the camera system to enter the at least one photodiode.

Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.

Abstract: A solid-state image pickup device according to the present disclosure includes: a pixel array unit, unit pixels being arranged in the pixel array unit, the unit pixels each including a plurality of photoelectric conversion sections; and a driving unit that changes a sensitivity ratio of the plurality of photoelectric conversion sections by performing intermittent driving with respect to storing of signal charges of the plurality of photoelectric conversion sections. That is, the solid-state image pickup device according to the present disclosure changes a sensitivity ratio of the plurality of photoelectric conversion sections by performing intermittent driving with respect to storing of signal charges of the plurality of photoelectric conversion sections.

Abstract: An image sensor may be formed from stacked first and second substrates. An array of imaging pixels that each have a photodiode and accompanying transistors may be formed in the first substrate. Verification circuitry may also be formed in the first substrate. Row control circuitry may be formed in the second substrate. The row control circuitry may provide row control signals to the array of imaging pixels. The verification circuitry may also receive the row control signals from the row control circuitry. The first substrate may include a plurality of n-channel metal-oxide semiconductor transistors and may not include any p-channel metal-oxide semiconductor transistors. The second substrate may also include a p-channel metal-oxide semiconductor current source coupled to the verification circuitry. Only the verification circuitry portions that are enabled by control signals from the row control circuitry may receive current from the current source.