Abstract: An image sensor includes multiple pixel groups arranged in a row included in a pixel array, the row including multiple pixels respectively allocated to the multiple pixel groups. The image sensor further includes multiple row drivers configured to respectively control operations of the pixels respectively allocated to the pixel groups in the row, and multiple readout circuits configured to respectively read out pixel signals output by the pixels respectively allocated to the pixel groups in the row.

Abstract: A solid-state imaging apparatus and an imaging system which can reduce the occurrence of darkening and decrease deterioration in CDS performance are provided. The solid-state imaging apparatus has: a pixel unit including a photoelectric conversion unit for generating a signal by a photoelectric conversion; an amplifier unit for amplifying the signal generated by the photoelectric conversion unit; and a limiting circuit for limiting a level of an output signal from the amplifier unit. The pixel unit outputs a noise signal under a reset state during a first period and outputs a pixel signal under a non-reset state during a second period. The limiting circuit limits the level of the output signal from the amplifier unit in the first period, lower than the level of the output signal from the amplifier unit in the second period.

Abstract: A method for manipulating the bus communication of an electronic control device is provided, wherein the bus communication includes a bus hardware-independent first communication layer and a bus hardware-dependent second communication layer. The first communication layer encodes at least one piece of information in a first protocol data unit and transmits it to the second communication layer and/or the first communication layer receives the first protocol data unit from the second communication layer and decodes the first information from the first protocol data unit. The second communication layer generates bus hardware-dependent bus information from the first protocol data unit or from an additional protocol data unit derived from the first protocol data unit for transmission via the bus and/or the second communication layer generates the first protocol data unit or an additional protocol data unit, from which the first protocol data unit can be derived.

Abstract: A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

Abstract: A matrix-addressed system includes a system substrate and an array of pixels arranged in rows and columns disposed on the system substrate. A column-control circuit provides information to or receives information from the pixels. The column-control circuit includes a separate column-driver circuit connected to each column of pixels that provides information in common to all of the pixels in the column or receives information in common from all of the pixels in the column. A row-select circuit likewise disposed on the system substrate includes a serial shift register having a number of row storage elements equal to or larger than the number of rows in the array of pixels. Each row storage element in the shift register has a row-select line connected to all of the pixels in a row.

Abstract: A solid-state imaging device including a photoelectric conversion portion photoelectrically converting incident light into signal charge and accumulate the signal charge, a plurality of signal lines including a transfer signal line to which a transfer signal for reading the signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting a plurality of desired signals into the plurality of signal lines including the transfer signal line, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of the plurality of desired signals with respect to a signal line adjacent to the transfer signal line of the plurality of signal lines is input to the signal line adjacent to the transfer signal line.

Abstract: There is provided an image pickup apparatus that has a mixture readout mode configured to mix and read outputs of a plurality of pixels in an image sensor (107), when pixels to be mixed are image pickup pixels, they are mixed. When the pixels to be mixed contain a focus detection pixel, a signal of the image pickup pixel is not mixed with a signal of the focus detection pixel.

Abstract: An apparatus includes a detecting pixel including a converting element and a switch element, a different pixel includes a different converting element and a different switch element, a signal line connected in common to a plurality of the switch elements, a driving unit configured to drive the different switch element and the switch element, and a control unit configured to control the driving unit, wherein the control unit controls the driving unit such that in a case where an on-state voltage or an off-state voltage is applied to at least one switch element, a voltage of opposite polarity to the on-state voltage or the off-state voltage is applied to a different switch element that is different from the at least one switch element or a voltage of opposite polarity to the on-state voltage or the off-state voltage is applied to the different switch element.

Abstract: The present invention provides an image sensor, including: a sensor array layer including a plurality of normal sensor units and a pair of autofocus sensor units; a plurality of color filter units disposed on the sensor array layer to cover the plurality of normal sensor units; a pair of IR-pass filter units disposed on the sensor array layer to respectively cover the pair of autofocus sensor units; a micro-lens layer including a plurality of micro-lenses disposed on the color filter units and the IR-pass filter units, wherein one of the pair of autofocus sensor units detects infrared light came from a first side, and the other of the pair of autofocus sensor units detects infrared light came from a second side opposite to the first side to perform a phase detection autofocus function.

Abstract: a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.

Abstract: A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.

Abstract: A focus detection apparatus comprises an image capturing unit including a plurality of pixels for detecting a pair of image signals of an object, a setting unit which sets, in the image capturing unit, focus detection areas in which pixel lines including a plurality of pixels aligned in a first direction are arranged in a second direction perpendicular to the first direction, a signal generation unit which generates the pair of image signals from outputs of the pixel lines of the focus detection areas, and a focus detection unit which determines an amount of defocus of an imaging optical system by using the pair of image signals. The setting unit is configured to arrange the pixel lines such that the pixel lines are out of phase between adjacent focus detection areas.

Abstract: A multi-spectral visual light (VL) and infrared (IR) imaging system and method suitable for use in security cameras, security devices, surveillance cameras, surveillance devices, consumer digital cameras, consumer digital devices, thin clients, thick clients, industrial machine vision systems, automotive cameras, home furnishing cameras, residential cameras, commercial cameras, object detectors, as well as other markets and/or applications is provided. The multi-spectral VL and infrared IR imaging system comprises a plurality of VL imaging sensors, a plurality of infrared (IR) imaging sensors, and a readout assembly operatively connected to the CMOS imaging sensors and the IR imaging sensors, wherein the IR imaging sensors configured to generate thermal signals and operate the CMOS imaging sensors.

Abstract: A solid-state image sensor, comprising a plurality of circuit groups each of which can assume an operating state and a non-operating state, a storage unit configured to store an order of switching the plurality of circuit groups from the non-operating state to the operating state, and a control unit configured to receive, from outside the sensor, a control signal, common to the plurality of circuit groups, for switching the plurality of circuit groups from the non-operating state to the operating state, wherein after receiving the control signal, the control unit sequentially switches, according to the order stored in the storage unit, the plurality of circuit groups from the non-operating state to the operating state at an interval of a period corresponding to an integer multiple of a cycle of a clock signal.

Abstract: An imaging apparatus is provided which, in a case where an optical signal is smaller than a threshold, performs more AD conversions for generating digital signals than the number of times of AD conversions in a case where an optical signal is larger than the threshold.

Abstract: A focus detection apparatus comprising: a plurality of signal generation units that output pairs of image signals; a detection unit that detects first focus states of the imaging optical system based on the pairs of image signals without carrying out a predetermined digital filtering process, and detects second focus states of the imaging optical system based on the pairs of image signals that have undergone the predetermined digital filtering process, and reliabilities of the pairs of image signals; a selection unit that selects a second focus state to be used for focus control of the imaging optical system from among the second focus states based on the reliabilities; and an adjustment unit that, if a difference between the corresponding first and second focus states is greater than a threshold, decreases a possibility that this second focus state is selected.

Abstract: A solid-state imaging element includes a plurality of pixels which are two-dimensionally arranged and each of which includes a photoelectric conversion element, and a microlens which is provided on one or two or more first pixels out of the plurality of the pixels, in which an optical axis of the microlens extends inside a second pixel which is adjacent to the first pixel.

Abstract: Certain aspects relate to imaging systems and methods for manufacturing imaging systems and image sensors. The imaging system includes a pixel array including a plurality of pixels, the pixels configured to generate a charge when exposed to light and disposed on a first layer. The imaging system further includes a plurality of pixel circuits for reading light integrated in the pixels coupled thereto, each of the plurality of pixel circuits comprising one or more transistors shared between a subset of the plurality of the pixels, the one or more transistors disposed on a second layer different than the first layer. The imaging system further includes a plurality of floating diffusion nodes configured to couple each of the plurality of pixels to the plurality of pixel circuits.

Abstract: An image sensor comprises: a plurality of pixels; a plurality of column output lines; and a control unit configured to control a signal to be output from pixels selected from the plurality of pixels to the plurality of column output lines, and each of the plurality of pixels includes: a photoelectric conversion portion; a floating diffusion portion for holding charge transferred from the photoelectric conversion portion; and an addition portion to add capacitance to the floating diffusion portion. The control unit controls to add the capacitance to the floating diffusion portion in a case where signals are simultaneously output to the same column line from the selected pixels.

Abstract: A method and apparatus for the capture of a high number of quasi-continuous effective frames of 2-D data from an event at very short time scales (from less than 10?12 to more than 10?8 seconds) is disclosed which allows for short recording windows and effective number of frames. Active illumination, from a chirped laser pulse directed to the event creates a reflection where wavelength is dependent upon time and spatial position is utilized to encode temporal phenomena onto wavelength. A hyperchromatic lens system receives the reflection and maps wavelength onto axial position. An image capture device, such as holography or plenoptic imaging device, captures the resultant focal stack from the hyperchromatic lens system in both spatial (imaging) and longitudinal (temporal) axes. The hyperchromatic lens system incorporates a combination of diffractive and refractive components to maximally separate focal position as a function of wavelength.

Abstract: An image sensor comprises: a plurality of pixels; a first reference signal generator configured to output a first reference signal whose signal level changes with time; a second reference signal generator configured to output a second reference signal whose signal level changes with time, a rate of change of the signal level of the second reference signal being larger than that of the first reference signal; an analog-to-digital converter configured to perform an analog-digital conversion of a pixel signal output from each of the plurality of pixels using the first reference signal or the second reference signal selected in accordance with a magnitude of the pixel signal, wherein the plurality of pixels and the first reference signal generator are arranged in a first chip, and the second reference signal generator is arranged in a second chip.

Abstract: In a pixel array within an integrated-circuit image sensor, each of a plurality of pixels is evaluated to determine whether charge integrated within the pixel in response to incident light exceeds a first threshold. N-bit digital samples corresponding to the charge integrated within at least a subset of the plurality of pixels are generated, and then applied to a lookup table to retrieve respective M-bit digital values (M being less than N), wherein a stepwise range of charge integration levels represented by possible states of the M-bit digital values extends upward from a starting charge integration level that is determined based on the first threshold.

Abstract: The present technology relates to a solid-state imaging device that can reduce the power consumption in outputting a low-resolution image, a method of driving the solid-state imaging device, and an electronic apparatus. In the solid-state imaging device, a pixel summing unit outputs a horizontally- and vertically-summed pixel signal by combining pixel signals of pixels that are aligned in a vertical direction and have different weights, and pixel signals of pixels that are aligned in a horizontal direction and have different weights, the pixels being arranged in a matrix fashion. An AD converter unit performs AD conversion on the horizontally- and vertically-summed pixel signal that is output from the pixel summing unit. The present technology can be applied to solid-state imaging devices and the like.

Abstract: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Abstract: A radiation image pickup apparatus includes a pixel array including a plurality of pixels arranged in a matrix and configured to convert a radiant ray into electric signals, signal processors configured to output digital signals obtained in accordance with the electric signals output from the pixel array in parallel, and a controller configured to operate the signal processors after the signal processors enter a second power consumption state in which power consumption is higher than that of a first power consumption state from the first power consumption state after irradiation of a radiant ray to the pixel array is terminated, and to cause the signal processors to output digital signals after the signal processors are operated.

Abstract: An image sensor comprises: a first semiconductor including a plurality of pixels two-dimensionally arranged, and a plurality of divided output lines, in a first direction, configured to read out pixel signals from the plurality of pixels in the first direction; and a second semiconductor including a plurality of signal processing units, corresponding to the plurality of output lines, respectively, configured to process the readout pixel signals, and a readout unit configured to read out the signals output from the signal processing units in a second direction, wherein the first semiconductor and the second semiconductor are stacked, and the plurality of output lines and the plurality of signal processing units are connected in correspondence with each other.

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

Abstract: A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Abstract: In a photoelectric conversion apparatus, a signal generation circuit includes an amplification unit which generates a reference signal and which is configured the same as amplification units included in pixel output circuits, and a signal based on a reference signal is supplied to input nodes of a plurality of signal processing circuits or input nodes of a plurality of signal output circuits.

Abstract: An image sensor that has one or more pixels within a pixel array. The pixels are arranged within a plurality of rows within the array. Each row of the pixel array can be selected by a row decoder in response to an edge of a control signal. The control signal may be one of a plurality of signals generated by a processor coupled to the image sensor. The processor can control the exposure time of the pixels by varying the control signals. The control signals may also have an embedded narrow pulse that is used to determine the location of a “window” in the pixel array.

Abstract: A method of reading out a pixel includes photogenerating charge carriers during a single integration time in photodetectors of each one of a plurality of sub-pixels included in the pixel. Each one of the plurality of sub-pixels of the pixel has a same color filter. A floating diffusion node of the pixel is reset. The floating diffusion node is sampled to generate a reset output sample signal. Charge carriers that were photogenerated in a first portion of the plurality of sub-pixels are transferred to the floating diffusion node. The floating diffusion node is sampled to generate a first output sample signal. Charge carriers that were photogenerated in a second portion of the plurality of sub-pixels are transferred to the floating diffusion node. The floating diffusion node is sampled to generate a second output sample signal.

Abstract: An image sensor in accordance with exemplary embodiments of the inventive concept may include a pixel sensor array which includes an active pixel sensor and an optical black pixel sensor; a first analog to digital converter configured to convert a first sensing signal, which is provided from the active pixel sensor, to a first digital signal; a second analog to digital converter configured to convert a second sensing signal, which is provided from the optical black pixel sensor, to a second digital signal; and an output buffer configured to temporarily store and output the first digital signal and the second digital signal, wherein a plurality of noise characteristics of the second analog to digital converter is different from a plurality of noise characteristics of the first analog to digital converter.

Abstract: a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.

Abstract: An IC image sensor device may include image sensing IC pixels arranged in an array, and pixel line pairs coupled to the image sensing IC pixels. The IC image sensor device may include circuitry coupled to the pixel line pairs and configured to operate the array in a global shutter mode. Each pair of the pixel line pairs may include a pair of spaced electrical conductors having a twist.

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

Abstract: Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node.

Abstract: A pixel structure in an organic light emitting display panel includes a plurality of pixels. Each pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. Lengths of the first sub-pixel, the second sub-pixel, and the third sub-pixel are arranged along a first direction. Widths of the first sub-pixel, the second sub-pixel, and the third sub-pixel is arranged along a second direction. A length of the first sub-pixel is greater than a length of the second sub-pixel along the first direction and a length of the third sub-pixel along the first direction. The first sub-pixel, the second sub-pixel, and the third sub-pixel are orderly arranged along the second direction.

Abstract: A MOS type solid state imaging device in which unit pixels, each having a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node are arrayed in a matrix. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example ?1V).

Abstract: In a pixel array within an integrated-circuit image sensor, each of a plurality of pixels is evaluated to determine whether charge integrated within the pixel in response to incident light exceeds a first threshold. N-bit digital samples corresponding to the charge integrated within at least a subset of the plurality of pixels are generated, and then applied to a lookup table to retrieve respective M-bit digital values (M being less than N), wherein a stepwise range of charge integration levels represented by possible states of the M-bit digital values extends upward from a starting charge integration level that is determined based on the first threshold.

Abstract: Provided are an image capture device and a focus control method capable of performing reliability determination based on a phase difference AF method at high speed. A phase difference AF processing unit 19 of a digital camera performs a correlation operation of two images captured by a pixel pair P1, performs a correlation operation of two images captured by a pixel pair P2, performs a correlation operation of two images captured by a pixel pair P3, and performs a correlation operation of two images captured by a pixel pair P4. A system control unit 11 determines reliability of a focus control based on the phase difference AF method using detection signals of respective pixels with respect to each of the pixel pairs P1 to P4 based on four correlation operation results.

Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.

Abstract: Disclosed is an image sensor. The disclosed image sensor includes a pixel array including a plurality of unit pixels arranged in a matrix form having rows and columns, a binning sampling unit configured to output a binning sampling signal according to an average of signals from two or more unit pixels selected from among the unit pixels of each of the columns, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal. The selected unit pixels have different exposure times.

Abstract: A solid-state image sensing device includes: a photoelectric conversion unit that converts light into electrical signals for respective pixels and outputs the electrical signals; a signal separation unit that separates an offset signal, which is generated due to dark current, from each of the electrical signals outputted by the photoelectric conversion unit and outputs image signals which are electrical signals converted from light for the respective pixels; and a signal adding unit that adds the image signals, which is outputted from the signal separation unit, for each group of a plurality of pixels.

Abstract: A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.

Abstract: An image sensor includes a first column pair and a second column pair among a plurality of columns of a pixel array, an analog-to-digital converter pair, and a switch arrangement circuit configured to connect the first column pair with the analog-to-digital converter pair in response to first switch control signals such that two rows among a plurality of rows in the pixel array are read during a single access time.

Abstract: A depth measurement apparatus including ranging pixels each having a plurality of photoelectric conversion units for receiving light fluxes that have respectively passed through first and second pupil regions, a reading unit that is shared by the plurality of photoelectric conversion units, and a control unit for controlling the ranging operation, wherein a signal charge accumulated in one of the photoelectric conversion units is output as a first signal and a second signal obtained by adding a signal accumulated in the other photoelectric conversion unit to the first signal is output, the signal charge accumulated in the other photoelectric conversion unit is acquired based on a difference between the first and second signals, and the signal charge of the photoelectric conversion unit receiving flux with a lower transmittance is read first.

Abstract: There is provided an image pickup apparatus including an image sensor including a plurality of phase difference detection pixels that each perform pupil division of a photographing lens, a gain acquisition unit for acquiring a gain used to correct an output of the phase difference detection pixels, and a correction processing unit for correcting the output of the phase difference detection pixels using the gain acquired by the gain acquisition unit.

Abstract: A depth measurement apparatus including ranging pixels each having photoelectric conversion units for receiving light fluxes that have respectively passed through first and second pupil regions, a reading unit shared by the photoelectric conversion units, and a control unit for controlling the ranging operation wherein a signal charge accumulated in one of the photoelectric conversion units is output as a first signal and a second signal obtained by adding a signal charge accumulated in the other photoelectric conversion unit to the first signal is output, the signal charge accumulated in the other photoelectric conversion unit is acquired based on a difference between the first and second signals after noise reduction, and the signal charge of the photoelectric conversion unit receiving flux with a higher transmittance is read first.

Abstract: A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.

Abstract: A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.