Oxygen Containing Patents (Class 423/325)
  • Patent number: 7851513
    Abstract: A process for producing aqueous silica-based sols, having an S value from 15 to 25%, mole ratio Si:Al from 20:1 to 50:1, mole ratio Si:X, where X=alkali metal, from 5:1 to 17:1, SiO2 content of at least 5% by weight and containing silica-based particles having a specific surface area of at least 300 m2/g, are disclosed wherein a cationic ion exchange resin having part of its ion exchange capacity in hydrogen form is contacted with an aqueous alkali metal silicate to form a slurry having a pH from 5.0 to 11.5 and/or having particle aggregation or microgel formation corresponding to a S value up to 45%; adjusting the pH using a material comprising an aluminium compound; and separating the resin from the slurry. Further, the use of such silica-based sols in producing paper is disclosed.
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: December 14, 2010
    Assignee: Akzo Nobel N.V.
    Inventors: Johan Nyander, Glenn Mankin
  • Publication number: 20100284882
    Abstract: The invention relates to spiro compounds of the formula (I) and to monolithic materials prepared therefrom by twin ring-opening polymerisation which consist of a porous metal oxide or semimetal oxide framework and are suitable for use as catalyst supports or as supports for active compounds.
    Type: Application
    Filed: December 1, 2008
    Publication date: November 11, 2010
    Applicants: Merck Patent Gesellschaft Mit Beschrankter Haftung, BASF SE
    Inventors: Matthias Koch, Stefan Spange, Arno Lange, Hans Joachim Haehnle, Rainer Dyllick-Brenzinger, Phillip Hanefeld, Marc Schroeder, Illshat Gubaydullin
  • Publication number: 20100255280
    Abstract: Provided is an oxide film including an Si component, in which a relative intensity ratio B/A of an absorption peak intensity B at a wavenumber of 1,000 to 850 cm?1 assigned to an Si—O-M bond where M represents H or a metal element to an absorption peak intensity A at a wavenumber of 1,200 to 1,000 cm?1 assigned to an Si—O bond in infrared absorption spectrum measurement of the film is 0.86 or more to 1.02 or less and an optical member using the oxide film are provided. The oxide film shows suppressed fluctuations in its characteristics even when left to stand under a high-temperature, high-humidity environment for a long time period; has significantly improved durability; and is stable over a long time period and an optical member using the oxide film.
    Type: Application
    Filed: December 9, 2008
    Publication date: October 7, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoshinori Kotani, Masayuki Yamada, Hiroyuki Tanaka, Tetsuya Hiraide
  • Publication number: 20100256347
    Abstract: Amine stabilizing agents containing an azeotrope comprising water, an alcohol, and sodium hydride. Amine stabilizing agents containing water and a liquid silica hydroxide compound. Methods of making of amine stabilizing agents where solid silicon rock and sodium hydroxide are mixed with an ammonium/water solution to produce a green liquid in a first stage of the reaction. Alcohol is added and the alcohol fraction is separated from the non-alcohol fraction to produce an alcohol fraction product and a bottom fraction that is not soluble in alcohol or organics. The agents can be added to amines for stabilizing amines in anime processing of gases, in CO2 capture, in CO2 abatement systems and in other systems where amines are utilized to remove contaminants.
    Type: Application
    Filed: January 28, 2010
    Publication date: October 7, 2010
    Inventor: Mark Owen Bublitz
  • Patent number: 7803340
    Abstract: Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: September 28, 2010
    Assignees: The University of Electro-Communications, Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki, Takashi Kawasaki, Masahiro Ibukiyama
  • Patent number: 7803347
    Abstract: A technique for bonding an organic group with the surface of fine particles such as nanoparticles through strong linkage is provided, whereas such fine particles are attracting attention as materials essential for development of high-tech products because of various unique excellent characteristics and functions thereof. Organically modified metal oxide fine particles can be obtained by adapting high-temperature, high-pressure water as a reaction field to bond an organic matter with the surface of metal oxide fine particles through strong linkage. The use of the same condition enables not only the formation of metal oxide fine particles but also the organic modification of the formed fine particles. The resulting organically modified metal oxide fine particles exhibit excellent properties, characteristics and functions.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: September 28, 2010
    Assignee: Tohoku Techno Arch Co., Ltd.
    Inventor: Tadafumi Ajiri
  • Patent number: 7794681
    Abstract: An efficient method for producing a silicon oxide powder at a low cost is provided. This method comprises the steps of heating a powder mixture of a silicon dioxide powder and a metal silicon powder to a temperature of 1,100 to 1,450° C. in an inert gas or under reduced pressure to generate silicon monoxide gas, and precipitating the silicon monoxide gas on a surface of a substrate to produce the silicon oxide powder, and in this method, the silicon dioxide powder has an average particle diameter of up to 1 ?m, and the metal silicon powder has an average particle diameter of 30 ?m.
    Type: Grant
    Filed: April 23, 2007
    Date of Patent: September 14, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Mikio Aramata, Satoru Miyawaki
  • Publication number: 20100202952
    Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.
    Type: Application
    Filed: February 10, 2009
    Publication date: August 12, 2010
    Applicant: BATTELLE MEMORIAL INSTITUTE
    Inventors: Jiguang Zhang, Jun Liu, Zhenguo Yang, Guanguang Xia, Leonard S. Fifield, Donghai Wang, Daiwon Choi, Gordon L. Graff, Larry R. Pederson
  • Patent number: 7754383
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery comprising an alloy including silicon and a transition metal selected from the group consisting of titanium, zirconium, vanadium, molybdenum, tungsten, iron, and nickel; and a silicon oxide film and an oxide film of the transition metal formed on a surface of the alloy wherein the alloy includes an A phase including silicon and a B phase including a crystalline alloy of silicon and the transition metal. The negative electrode material has a silicon oxide film and an oxide film of the transition metal on the surface of the alloy wherein the thickness ratio of the transition metal oxide film to the silicon oxide film is at least 0.44 and smaller than 1.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: July 13, 2010
    Assignee: Panasonic Corporation
    Inventors: Teruaki Yamamoto, Masaki Hasegawa, Yasuhiko Bito
  • Publication number: 20100158781
    Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.
    Type: Application
    Filed: February 24, 2009
    Publication date: June 24, 2010
    Applicant: SILTRON INC.
    Inventor: Hyon-Jong Cho
  • Patent number: 7741376
    Abstract: A dispersed ingredient having metal-oxygen bonds which is obtained by hydrolyzing a metal alkoxide in an organic solvent in the absence of an acid, a base, and/or a dispersion stabilizer, either with 0.5 to less than 1 mol of water per mol of the metal alkoxide or at ?20° C. or lower with 1.0 to less than 2.0 mol of water per mol of the metal alkoxide. In the organic solvent, the dispersed ingredient is stably dispersed without aggregating. Use of the dispersed ingredient enables a thin metal oxide film and a homogeneous organic/inorganic composite to be produced at a temperature as low as 200° C. or below.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: June 22, 2010
    Assignee: Nippon Soda Co., Ltd.
    Inventors: Motoyuki Toki, Akiji Higuchi, Nobuo Kimura, Yoshitaka Fujita
  • Patent number: 7740821
    Abstract: A mesoporous silicate is prepared by a method that includes combining a silicate precursor, a bifunctional catalyst, and a structure-directing surfactant in an aqueous medium having a pH of about 4 to about 10. A mesoporous silicate forms as an aqueous suspension and can then be isolated. The mesoporous silicate can be formed under mild conditions of temperature and pH, and it exhibits a surprisingly high degree of network condensation.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: June 22, 2010
    Assignee: The University of Massachusetts
    Inventors: James J. Watkins, David M. Hess
  • Publication number: 20100130025
    Abstract: The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>-Si chain where n=l.
    Type: Application
    Filed: June 21, 2006
    Publication date: May 27, 2010
    Inventor: Christian Dussarrat
  • Publication number: 20100111802
    Abstract: By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.
    Type: Application
    Filed: October 23, 2009
    Publication date: May 6, 2010
    Applicant: SUMCO CORPORATION
    Inventors: Shigeru UMENO, Keiichiro HIRAKI, Hiroaki TAGUCHI
  • Patent number: 7691766
    Abstract: The invention is concerned with a material which shows low absorption for UV radiation having a wavelength below 250 nm, low birefringence, high chemical resistance and high radiation resistance and which is therefore particularly usable for making optical components for microlithography. According to the invention the material consists of synthetically produced quartz crystallites which form a polycrystalline structure and have a mean grain size in the range between 500 nm and 30 ?m. The method according to the invention for making a blank from the material comprises providing granules consisting of synthetically produced quartz crystals having a mean grain size in the range between 500 nm and 30 ?m, and sintering the granules to obtain a blank of polycrystalline quartz.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: April 6, 2010
    Assignee: Heraeus Quarzglas GmbH & Co. KG
    Inventors: Bodo Kuehn, Stefan Ochs
  • Publication number: 20100080746
    Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
    Type: Application
    Filed: December 20, 2007
    Publication date: April 1, 2010
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Juergen Erwin Lang, Hartwig Rauleder, Ekkehard Mueh
  • Publication number: 20100068294
    Abstract: A method for preparing ortho silicic acid wherein an acid hydrolysable silicon compound is hydrolysed in an acid solution in the presence of a non-toxic solvent agent resulting in the formation of ortho silicic acid, wherein preferably the ortho silicic acid formed is contacted with a non-toxic particulate carrier, and to the use of a silicon preparation in the production of animal feed, food or food supplement, and of a pharmaceutical or cosmetic preparation.
    Type: Application
    Filed: September 17, 2009
    Publication date: March 18, 2010
    Applicant: BIO MINERALS N.V.
    Inventor: Dirk André Richard Van Den Berghe
  • Publication number: 20100055016
    Abstract: Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials.
    Type: Application
    Filed: February 1, 2008
    Publication date: March 4, 2010
    Inventors: Sang-Hyeob Kim, Hye-Jin Myoung, Sung-Lyul Maeng, G.A.J. Amaratunga, Sunyoung Lee
  • Publication number: 20100029057
    Abstract: A silicone resin which is represented by the following rational formula (1) and solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2. The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.
    Type: Application
    Filed: September 21, 2007
    Publication date: February 4, 2010
    Applicant: JSR Corporation
    Inventors: Haruo Iwasawa, Tatsuya Sakai, Yasuo Matsuki, Kentaro Tamaki
  • Patent number: 7655206
    Abstract: The present invention relates to a for controlled synthesis of hydrogen-rich cyclosiloxanes of the (H2SiO)n type. where n is an integer equal to or greater than 3, by reacting: a.) a halosilane of the H2SiX2 type where X=halogen with b.) a lithium salt, copper(II) salt or a salt of a metal from main group 2 or transition group 2 of the periodic table of the elements, or a mixture of these salts. The ring size is advantageously adjustable to n=3, 4, 5, 6 (especially n=4 to 6), such that larger rings are not formed. In a particularly advantageous embodiment of the process, for the selective preparation of cyclohexasiloxane (H2SiO)6, after the reaction, the solvent is at least partly removed and then solvent is added again.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: February 2, 2010
    Assignee: Evonik Degussa GmbH
    Inventors: Gerrit Fester, Gerhard Roewer, Edwin Kroke
  • Publication number: 20100012972
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Application
    Filed: November 21, 2006
    Publication date: January 21, 2010
    Applicant: The Arizona Board of Regents, a body corparate acting onbehalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter III, Changwu Hu, Ignatius S.T. Tsong, Andrew Chizmeshya
  • Patent number: 7637997
    Abstract: A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 ?cm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: December 29, 2009
    Assignee: Sumco Corporation
    Inventors: Toshiaki Ono, Wataru Sugimura, Masataka Hourai
  • Publication number: 20090297426
    Abstract: When a monocrystal is pulled up, an additive element such as boron is added to a molten silicon, and a pulling-up condition is such that a solid solution oxygen concentration is equal to or higher than 2×1018 atoms/cm3 and a chemical compound precipitation area of silicon and the additive element is formed.
    Type: Application
    Filed: June 1, 2009
    Publication date: December 3, 2009
    Applicant: SUMCO CORPORATION
    Inventors: Takeo KATOH, Kazushige TAKAISHI
  • Patent number: 7622189
    Abstract: Structures and methods for the fabrication of ceramic nanostructures. Structures include metal particles, preferably comprising copper, disposed on a ceramic substrate. The structures are heated, preferably in the presence of microwaves, to a temperature that softens the metal particles and preferably forms a pool of molten ceramic under the softened metal particle. A nano-generator is created wherein ceramic material diffuses through the molten particle and forms ceramic nanostructures on a polar site of the metal particle. The nanostructures may comprise silica, alumina, titania, or compounds or mixtures thereof.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: November 24, 2009
    Assignee: Babcock & Wilcox Technical Services Y-12, LLC
    Inventors: Edward B. Ripley, Roland D. Seals, Jonathan S. Morrell
  • Patent number: 7615206
    Abstract: Methods for the production of shaped nanoscale-to-microscale structures, wherein a nanoscale-to-microscale template is provided having an original chemical composition and an original shape, and the nanoscale-to-microscale template subjected to a chemical reaction, so as to partially or completely convert the nanoscale-to-microscale template into the shaped nanoscale-to-microscale structure having a chemical composition different than the original chemical composition and having substantially the same shape as the original shape, being a scaled version of the original shape. The shaped nanoscale-to-microscale structure formed comprises an element (such as silicon), a metallic alloy (such as a silicon alloy), or a non-oxide compound (such as silicon carbide or silicon nitride).
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: November 10, 2009
    Assignee: Georgia Tech Research Corporation
    Inventors: Kenneth Henry Sandhage, Zhihao Bao
  • Patent number: 7615201
    Abstract: By using a halogen-free siloxane and an organometallic compound containing at least one metal other than silicon as feed stocks, and simultaneously atomizing and burning them in a flame, spherical particles of silica-containing compound oxide are prepared which are substantially halogen-free, consist of 0.5-99% by weight of metal oxides and the balance of silica, and have a particle size of 10 nm to 3 ?m. The particles are useful as a filler in epoxy resin base semiconductor sealants, a refractive index modifier or the like.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: November 10, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshiharu Konya, Koichiro Watanabe, Susumu Ueno
  • Publication number: 20090232721
    Abstract: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.
    Type: Application
    Filed: March 6, 2009
    Publication date: September 17, 2009
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi FUKUOKA, Meguru Kashida, Toshio Ohba
  • Patent number: 7585480
    Abstract: A highly pure ultra-fine SiOx (wherein x is from 0.6 to 1.8) powder having a specific surface area of at least 10 m2/g and a total content of Na, Fe, Al and Cl of at most 10 ppm is provided. The SiOx powder is produced by reacting a monosilane gas with a gas capable of oxidizing the monosilane gas in a non-oxidizing gas atmosphere under a pressure of from 10 to 1000 kPa at a temperature of from 500 to 1000° C. In this case, the amount of the non-oxidizing gas is preferably larger than the total amount of the monosilane gas and oxygen participating in the oxidation of the gas capable of oxidizing the monosilane gas.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: September 8, 2009
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Yasuo Imamura, Ryozo Nonogaki
  • Patent number: 7576035
    Abstract: A pillar-shaped honeycomb structure has a plurality of cells longitudinally placed in parallel with one another with a wall portion therebetween, wherein the honeycomb structure mainly includes inorganic fibers which form the honeycomb structure without lamination interfaces.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: August 18, 2009
    Assignee: Ibiden Co., Ltd.
    Inventors: Kazushige Ohno, Tomokazu Oya
  • Patent number: 7576169
    Abstract: Polyhedral silsesquioxane anions are economically prepared by reaction of a silica source derived from combusted organic material with a quaternary ammonium hydroxide compound. Reaction of the resulting anions with chlorosilanes may be effected in near stoichiometric fashion in organic solvent containing reactive quantities of organic acids such as formic acid. The functional groups on the resulting functionalized silsesquioxanes may be substituted for other functional groups by reaction with di- or polysiloxanes in the presence of a synthetic ion exchange resin.
    Type: Grant
    Filed: October 22, 2004
    Date of Patent: August 18, 2009
    Assignee: The Regents of the University of Michigan
    Inventors: Isao Hasegawa, Richard M. Laine, Michael Z. Asuncion, Norihiro Takamura
  • Patent number: 7553794
    Abstract: A supported catalyst comprising a support having supported thereon at least one member selected from the group consisting of heteropolyacids and heteropolyacid salts, in which the heteropolyacid and/or heteropolyacid salt is substantially present in a surface layer region of the support to a depth of 30% from the support surface. The catalyst has a high performance when used for the production of compounds by various reactions.
    Type: Grant
    Filed: November 27, 2003
    Date of Patent: June 30, 2009
    Assignee: Showa Denko K.K.
    Inventor: Masaaki Sakai
  • Patent number: 7547782
    Abstract: The present invention is directed to compounds having the formula I or II: including salts thereof, and methods for using them for the treatment of cancer.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: June 16, 2009
    Assignee: Bristol-Myers Squibb Company
    Inventors: Robert M. Borzilleri, Xiao-Tao Chen, David K. Williams, John S. Tokarski, Robert F. Kaltenbach
  • Patent number: 7547431
    Abstract: A method of producing high purity nanoscale powders in which the purity of powders produced by the method exceeds 99.99%. Fine powders produced are of size preferably less than 1 micron, and more preferably less than 100 nanometers. Methods for producing such powders in high volume, low-cost, and reproducible quality are also outlined. The fine powders are envisioned to be useful in various applications such as biomedical, sensor, electronic, electrical, photonic, thermal, piezo, magnetic, catalytic and electrochemical products.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: June 16, 2009
    Assignee: PPG Industries Ohio, Inc.
    Inventors: Tapesh Yadav, Karl Pfaffenbach
  • Patent number: 7538068
    Abstract: A carbon dioxide gas absorbent includes a porous body containing a lithium complex oxide. The porous body includes pores having a pore diameter distribution such that main pores which consist of first pores with a diameter of 10 to 100 ?m and second pores with a diameter larger than 100 ?m and 500 ?m or smaller occupy 80 to 100%, third pores with a diameter smaller than 10 ?m occupy 0 to 10% and fourth pores with a diameter larger than 500 ?m occupy 0 to 10%, the main pores have a pore diameter distribution such that the first pores occupy 15 to 85% and second pores occupy 15 to 85%.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: May 26, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiro Kato, Toshihiro Imada, Kenji Essaki
  • Publication number: 20090117023
    Abstract: In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2?=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2?3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
    Type: Application
    Filed: June 5, 2006
    Publication date: May 7, 2009
    Applicant: OSAKA TITANIUM TECHNOLOGIES CO., LTD.
    Inventor: Yoshitake Natsume
  • Patent number: 7517614
    Abstract: The negative active material for a rechargeable lithium battery of the present invention includes a carbonaceous material and a silicon-based compound represented by Formula 1: Si(1-y)MyO1+x(1) where 0?y?1, ?0.5?x?0.5, and M is selected from the group consisting of Mg, Ca, and mixtures thereof.
    Type: Grant
    Filed: September 9, 2008
    Date of Patent: April 14, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Goo-Jin Jeong, Sang-Min Lee, Sung-Soo Kim, Yoshiaki Nitta
  • Publication number: 20090074646
    Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
    Type: Application
    Filed: September 12, 2008
    Publication date: March 19, 2009
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Teruo Sasagawa, Xiaoming Yan
  • Patent number: 7504084
    Abstract: This invention relates to a process for converting silica to polysilicate gels or hydrogels by combining an aqueous silica source with a CO2 feed stream as the gel initiator, whereby the reaction stream is propelled at high velocity and turbulence maintaining the CO2 uptake rate in the reaction stream. The invention also relates to a process for converting silica to polysilicate by pre-carbonating water at pressures of equal to or greater than 100 psig before initiating the polysilicate reaction.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: March 17, 2009
    Assignee: Ciba Specialty Chemicals Corporation
    Inventors: Walter N. Simmons, Walter J. Simmons
  • Publication number: 20090042720
    Abstract: The present invention relates to a process for preparing an activating support for metallocene complexes in the polymerisation of olefins comprising the steps of: I) providing a support prepared consisting in particles formed from at least one porous mineral oxide; II) optionally fixing the rate of silanols on the surface of the support; III) functionalising the support with a solution containing a fluorinated functionalising agent; IV) heating the functionalised and fluorinated support of step c) under an inert gas and then under oxygen; V) retrieving an active fluorinated support. That activating support is used to activate a metallocene catalyst component for the polymerisation of olefins.
    Type: Application
    Filed: July 21, 2006
    Publication date: February 12, 2009
    Inventors: Floran Prades, Christophe Boisson, Roger Spitz, Abbas Razavi
  • Publication number: 20090041649
    Abstract: The present invention relates to a for controlled synthesis of hydrogen-rich cyclosiloxanes of the (H2SiO)n type. where n is an integer equal to or greater than 3, by reacting: a.) a halosilane of the H2SiX2 type where X=halogen with b.) a lithium salt, copper(II) salt or a salt of a metal from main group 2 or transition group 2 of the periodic table of the elements, or a mixture of these salts. The ring size is advantageously adjustable to n=3, 4, 5, 6 (especially n=4 to 6), such that larger rings are not formed. In a particularly advantageous embodiment of the process, for the selective preparation of cyclohexasiloxane (H2SiO)6, after the reaction, the solvent is at least partly removed and then solvent is added again.
    Type: Application
    Filed: April 19, 2007
    Publication date: February 12, 2009
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Gerrit Fester, Gerhard Roewer, Edwin Kroke
  • Publication number: 20090033200
    Abstract: The invention relates to a barrier layer provided on the electrode assembly of a discharge lamp comprising at least a layer of nanoclusters of a non-oxidizing material. Further, the invention relates to an electrode assembly for a discharge lamp comprising an electrode having a foil attached thereto to create an electrode assembly, the assembly being coated with a multi-layer coating comprising at least a layer of non-oxidizing material in the form of nanoclusters, and at least another layer of non-oxidizing material, such that the total coating thickness is up to 1500 nm.
    Type: Application
    Filed: August 1, 2007
    Publication date: February 5, 2009
    Inventor: Deeder M. Aurongzeb
  • Publication number: 20080305025
    Abstract: The invention provides a method for the formation of small-size metal oxide particles, comprising the steps of: a) preparing a starting aqueous solution comprising at least one of metallic ion and complexes thereof, at a concentration of at least 0.1% w/w of the metal component; b) preparing a modifying aqueous solution having a temperature greater than 50° C.; c) contacting the modifying aqueous solution with the starting aqueous solution in a continuous mode in a mixing chamber to form a-modified system; d) removing the modified system from the mixing chamber in a plug-flow mode; wherein the method is characterized in that: i) the residence time in the mixing chamber is less than about 5 minutes; and iii) there are formed particles or aggregates thereof, wherein the majority of the particles formed are between about 2 nm and about 500 nm in size.
    Type: Application
    Filed: December 21, 2006
    Publication date: December 11, 2008
    Applicant: Joma International AS
    Inventors: Asher Vitner, Aharon Eyal
  • Patent number: 7452518
    Abstract: A process for producing a synthetic quartz glass powder which is substantially free of carbon contaminant, for reduced bubble density and improved stability of articles made from the synthetic quartz glass during fusion molding by maintaining the synthetic silica powder in an oxidizing environment, e.g., an atmosphere comprising at least 3 vol. % ozone at a temperature of less than 1400° C., causing carbon containing compounds to be reduced to less than 10 ppm.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: November 18, 2008
    Assignee: Momentive Performance Materials Inc.
    Inventors: Richard L. Hansen, Theodore P. Kircher, Douglas M. Korwin
  • Publication number: 20080253953
    Abstract: The present invention relates to a process for the preparation of a silicate comprising at least silicon and oxygen, comprising (1) mixing of silicon dioxide and/or of a silicon dioxide precursor with an aqueous solution comprising at least one tetraalkylammonium compound comprising R1R2R3R4N+ and at least one base, wherein R1 and R2 are methyl and both R3 and R4 are n-propyl; (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at atmospheric pressure to give a suspension comprising at least one silicate, wherein the silicate comprising at least silicon and oxygen is added as a crystallization auxiliary in (1).
    Type: Application
    Filed: October 11, 2006
    Publication date: October 16, 2008
    Applicants: BASF SE, rubitec GmbH
    Inventors: Ulrich Muller, Roger Ruetz, Hermann Gies
  • Patent number: 7432015
    Abstract: The negative active material for a rechargeable lithium battery of the present invention includes a carbonaceous material and a silicon-based compound represented by Formula 1: Si(1-y)MyO1+x ??(1) where 0<y<1, ?0.5?x?0.5, and M is selected from the group consisting of Mg, Ca, and mixtures thereof.
    Type: Grant
    Filed: February 24, 2005
    Date of Patent: October 7, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Goo-Jin Jeong, Sang-Min Lee, Sung-Soo Kim, Yoshiaki Nitta
  • Patent number: 7431899
    Abstract: A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: October 7, 2008
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hirofumi Fukuoka, Susumu Ueno, Takeshi Fukuda
  • Publication number: 20080213851
    Abstract: The invention relates to a method for producing bioactive surfaces by enzymatic modification of molecules or molecular aggregates, in particular, collagen, on surfaces of glass, metals, metallic oxides, plastics, biopolymers or other materials with an amorphous silicon dioxide (silica) or silicones in the cell culture, by tissue engineering or in medical implants, whereby a polypeptide is used for enzymatic modification, which contains a silicatein ? or silicatein ? domain. The inventive method promotes the growth, activity and/or mineralization of cells/cell cultures.
    Type: Application
    Filed: May 2, 2005
    Publication date: September 4, 2008
    Inventors: Werner E.G. Muller, Heinz C. Schroder
  • Publication number: 20080199383
    Abstract: [Objective] To develop a method of fabricating carbon nanotube bundles clad in a quartz sheath with high temperature and chemical resistance. [Method of Fabrication] The microcrystalline carbon nanotube sample in powder form is vacuum-sealed within a quartz tube sheath and heated to the softening temperature of quartz, then quickly quenched to room temperature while simultaneously extending or “drawing” the quartz tube along its major axis.
    Type: Application
    Filed: February 19, 2007
    Publication date: August 21, 2008
    Inventor: Yuichiro Nishina
  • Publication number: 20080193831
    Abstract: Silicon oxide based anode active materials are provided. In one embodiment, the active materials include silicon oxides represented by the general formula SiOx, where 0<x<0.8. The anode active materials include silicon oxides having low oxygen contents. Further, anodes and lithium batteries employing such anode active materials have excellent charge-discharge characteristics.
    Type: Application
    Filed: September 25, 2007
    Publication date: August 14, 2008
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Sang-kook Mah, Han-su Kim
  • Publication number: 20080166634
    Abstract: Silicon oxide based composite anode active materials including amorphous silicon oxides are provided. In one embodiment, the amorphous silicon oxide is represented by SiOx (where 0<x<2), has a binding energy of about 103 to about 106 eV, a silicon peak with a full width at half maximum (FWHM) ranging from about 1.6 to about 2.4 as measured by X-ray photoelectron spectrometry, and an atomic percentage of silicon greater than or equal to about 10 as calculated from an area of the silicon peak. The anode active material is a composite anode active material obtained by sintering hydrogen silsesquioxane (HSQ). Anodes and lithium batteries including the anode active material exhibit improved charge and discharge characteristics.
    Type: Application
    Filed: September 5, 2007
    Publication date: July 10, 2008
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Han-su Kim, Sang-kook Mah