Abstract: In one embodiment of the present invention a thick film resistor structure comprising common materials is disclosed. The structure includes a supporting carrier as a base for the thick film resistor arrangement, which comprises a resistive material printed on the carrier, first and second noble metal terminating layers connected to either side of the resistive material, first and second barrier layers respectively connected to the first and second noble metal terminating layers, and first and second conducting layers respectively connected to said first and second barrier layers. The barrier layers are preferably composed of nickel or tungsten, whereas the noble metal terminating layers are preferably composed of silver. The resistive material, being formed between the terminating layers, is electrically connected to said copper conducting layers to form a precise thick film resistor structure whose resistance is measurable between said conducting layers.

Abstract: A method is described for producing multilayer circuits including a resistor circuit on one side of a copper laminated base board, wherein the base board is etched to provide a plurality of circuits of a first layer, effectively processed with a plating-resistant resist and an electrically conductive copper paste to form a plurality of circuits of a second layer, immersed in a metal plating solution to provide a metal plating layer on the copper paste to thereby form the circuits of the second layer on the circuits of the first layer, coated with an electrically conductive paste to provide a pair of electric terminals between two of the circuits of the second layer, and coated with an electrically resistant resist of a predetermined electric resistance value on a part extended between the two electric terminals.

Abstract: A roughened surface is formed on an insulating ceramics substrate having an electrode pattern by bonding or partially thrusting ceramics particles to or in the substrate, and a gas-sensitive metal oxide thick film is firmly bonded to the roughened surface.

Abstract: This invention provides a shaped, graded, cermet article comprising at least one continuous ceramic phase and at least one discontinuous metal phase, the ratio of ceramic/metal being controlled and varied over the thickness of the article. The ceramic phase preferably is microcrystalline.

Abstract: The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance.In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

Abstract: A thick film resistor composition, comprising a silicide powder composed of a molybdenum disilicide, a tantalum disilicide and a magnesium silicide, and an alkaline earth borosilicate glass powder dispersed in a vehicle containing a heat-depolymerizing organic polymer. The thick film resistor composition, employing this heat-depolymerizing organic polymer, can be fired in a nonoxidizing atmosphere and coexist with base metal materials such as copper electrodes. Owing to the Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 contained in the alkaline earth borosilicate glass powder, the thick film resistor composition is free from sheet resistivity fluctuation, according to resistor length, which would result from diffusion of the electrode material into the resistor.

Abstract: A hybrid integrated circuit substrate comprising an insulating substrate. On predetermined positions of the upper surface of the substrate, there are formed cermet resistors and activation layers to be in contact with ends of the resistors. On predetermined positions of the upper surface of the activation layers, there are formed conductor layers electrically connected with the ends of the resistors through the activation layers. The activation layers are formed from an activation paste containing a catalytic metal for enabling deposition in electroless plating in glass ingredients for attaining adhesion with the insulating substrate upon firing. Electrical connection between the conductor layers and the cermet resistors occurs through the activation layers by ohmic contact effected between the cermet resistors and the conductor layers through diffusion layers formed upon firing the activation paste.

Abstract: An improved thin film resistor material is disclosed which comprises a chromium-silicon-carbon material containing from about 25 to 35 wt. % chromium, about 45 to 55 wt. % silicon, and about 20 to 30 wt. % carbon. The resistor material is further characterized by a resistivity of greater than about 800 ohms per square to less than about 1200 ohms per square, a temperature coefficient of resistance of less than 160 ppm per degree Centigrade, and a lifetime stability of less than 0.1% change in resistivity. In the preferred embodiment, the resistor material contains 31 wt. % chromium, 46 wt. % silicon, and 24 wt. % carbon.

Abstract: A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Abstract: Disclosed is a method for forming thick film circuits or the like to be used when forming elements such as conductors and resistors on a thick film circuit board. The method is performed with a writing head for storing paste to form patterns and which lowers and approaches an arbitrary point in close proximity to the board of a thick film circuit and while same state, moves laterally to another other arbitrary point along the surface of the board, and then ascends to be separated from the board. The paste in the writing head is pressurized to be forced out of the head before the writing head begins to move laterally such that the paste is immediately applied on the board when the writing head begins to move laterally. This pressurization of the paste is stopped before the writing head finishes its lateral movement, so that the extrusion of the paste may be stopped the moment the writing head finishes the lateral movement.

Abstract: Disclosed is a method of forming a thick film circuit pattern according which involves moving a nozzle having a slit opening above the surface of a stationary substrate with the elongation of the slit opening being oriented at an angle to the direction of movement of the nozzle and forcing a paste in the nozzle downward through the slit opening onto the substrate to deposit a sufficiently wide and uniformly thick film strip. Preferably, the surface irregularities of the substrate are detected without contacting it for controlling the position of the slit opening above the substrate so that it follows closely parallel with the surface contour line of the substrate.

Abstract: A method of forming chip resistors in which a resistive coating is applied to an insulating substrate which is subsequently divided up into single chip components includes the step of providing end terminations for the individual chip resistors before the sheet is divided up. This is achieved by forming a hole 13 in the substrate 11 at the position of each end termination and then coating the holes with an electrically conductive material 14 which electrically connects with the adjacent region of the resistive coating 12. In order to improve the solderability and the reliability of the end terminations the holes 13 may be filled with solder 15. The electrical value of the resistive element coating may then be adjusted to a precise value by trimming away some of the resistive element material with a laser. Finally, the substrate is divided up into the single chip resistor components.

Abstract: A process for fabricating electronic switching elements and/or circuits in multilayer thick-film technology on a substrate. The electronic switching elements and/or circuits are printed onto the substrate in the form of liquid or pasty mixtures of materials, then heat-treated, whereupon at least one insulating layer is deposited on the thick-film conducting layer. In this process, the surface of any desired insulating interlayer is finished abrasively and subsequently again at least one thick-film conducting layer or at least one insulating layer is deposited on the finished surface. Then, the surface or this insulating layer is again finished abrasively in subsequent printing operations of thick-film conducting layers or in other insulating layers in order to provide upon completion each layer at least the same processing ingredients and conditions as those on the surface of the substrate.

Abstract: Nitrous oxide additions to the furnace atmosphere during firing of thick film electrical components minimizes soot deposition from vaporization of vehicle contained in the film paste.

Abstract: A method is disclosed for fabricating thick film electrical components which are exceptionally uniform in electrical properties and have increased density wherein a thick film ink comprised of (i) an organic vehicle which is reactive with a plasma to form gaseous reaction products at a temperature below its thermal decomposition temperature, (ii) a glass frit having a glass transition temperature above the thermal degradation temperature, and (iii) a particulate material having the desired electrical properties for the thick film electrical component are applied to a suitable substrate in a pattern corresponding to the electrical component. The applied layer is then subjected to a suitable plasma at a temperature below the thermal degradation temperature for a time sufficient to remove the organic vehicle from the applied layer. The resultant layer is then heated at or above the glass transition temperature of the glass frit until the glass frit fuses and forms a composite with the particulate material.

Abstract: The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO--SnO.sub.2 --Ta.sub.2 O.sub.5 --Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.

Abstract: A method of screen printing a conductive ink onto a substrate to form a pattern of narrow, closely spaced conductive lines. Before screening, the conductive ink is exposed to ambient air until its viscosity is in the range 700,000 to 900,000 centipoise at 70.degree. Fahrenheit.

Abstract: A method for fabricating a solid state semiconductor gas sensor and the semiconductor sensor itself for use in equipment detecting small amounts of H.sub.2 S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or film binder materials, and including in suspension a molecular sieve material, for enhancing porosity on a scale of molecular dimensions in the finished sensor. All of the foregoing materials are suspended in a suitable solution and preferably sprayed onto a heated insulating substrate to form the finished product. The example sensor, capable of selective detection of H.sub.2 S in air and a sensitivity of less than 1 PPM (part per million), is comprised of a platinum activated alumina, tin oxide, and zeolite molecular sieve material.

Abstract: Single crystal dielectrically isolated islands are formed providing a substantially non-reflective or indentured silicon surface before the application of the dielectric isolation layer and the polycrystalline support. Thin film resistor material is formed and delineated on an insulative layer over the single crystal island juxtaposed to the substantially non-reflective bottom dielectric isolation. The thin film resistive layer is trimmed using a laser.

Abstract: A method for trimming precision resistors which includes forming a helical groove in a conductive film coating on a cylindrical core. Final trimming includes forming discrete circular depressions in the film coating by using a pulsed laser. This method enables the manufacture of precision resistors having a tolerance of 0.25% or better.

Abstract: Disclosed is a method of forming a precision integrated resistor element on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body in combination with a test resistor structure by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring the resistance(s) and width(s) of the test structure the variation .DELTA..rho..sub.s in sheet resistance and variation .DELTA.W in width due to process and image tolerances, respectively, are determined. Next, using .DELTA..rho..sub.s and .DELTA.W the adjustment in length .DELTA.L necessary to match the resistance of the resistance element with the nominal design value is calculated. Finally, this information (.DELTA.

Abstract: An array of electrically interconnected spaced electrical components on an apertured substrate wafer, each component being connected to terminal conductor pads on one surface of the substrate and to terminal conductor pads on the opposite surface of the substrate by thick film conductor strips which extend along the walls of the apertures is disclosed.

Abstract: Thick film resistor composition which is a dispersion of (a) a conductive phase of a nonprecious metal pyrochlore and SnO.sub.2, (b) inorganic binder and (c) CoCrO.sub.4 and/or NiCrO.sub.4 in (d) organic medium. The metal chromate functions as a TCR driver.

Abstract: The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO-SnO.sub.2 -Ta.sub.2 O.sub.5 -Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.

Abstract: A resistor sheet input tablet comprising two rectangular resistor sheets each provided at two opposite edges thereof with electrodes, the rectangular resistor sheets being superposed such that the electrodes on one of the resistor sheets lie perpendicularly to those on the other resistor sheets, wherein the resistor sheets have a two resistor layer construction comprising (a) a main resistor layer consisting of a thin metal film deposited thereon which in turn is bonded to (b) an electrically insulating layer and (c) a protective resistor layer formed on the surface of the main resistor layer.

Abstract: A copper-containing thick film conductor composition comprising a mixture of finely divided particles of (a) a conductive material containing copper metal, (b) inorganic binder and (c) 0.2-5% wt. of a noncuprous metal selected from the group consisting of tungsten, molybdenum, rhenium and alloys and mixtures thereof all dispersed in organic medium. The metal particles must be within certain narrow ranges of particle size.

Abstract: Resistor composition comprising an admixture of finely divided particles of (a) ruthenium-based conductive material, (b) inorganic binder and (c) cobalt ruthenate.

Abstract: A composition for making electrical resistance elements including a conductive component which comprises(a) a precious metal oxide of the formula A'.sub.1-x A".sub.x B'.sub.1-y B".sub.y O.sub.3, wherein when A' is Sr; A" is one or more of Ba, La, Y, Ca and Na, and when A' is Ba, A" is one or more of Sr, La, Y, Ca and Na; B' is Ru; B" is one or more of Ti, Cd, Zr, V and Co, O<x<0.2; O<y<0.2;(b) a binder component which comprises(i) between 40 weight percent and 75 weight percent C', wherein C' is SrO when A' is Sr, C' is BaO when A' is Ba, and C' is SrO+BaO when A' is Sr and A" is Ba and when A' is Ba and A" is Sr,(ii) between 20 weight percent and 35 weight percent B.sub.2 O.sub.3,(iii) between 2 weight percent and 12 weight percent SiO.sub.2, and(iv) between 0.5 weight percent and 6.5 weight percent ZnO. The method of the present invention includes mixing the conductive component and binder as described above with an organic vehicle.

Abstract: Method for producing a thin film resistor by vapor deposition or cathode sputtering techniques, wherein part of the resistance area of the film is covered by an electrically insulating layer which prevents oxygen diffusion onto the resistance material and causes a decrease of the resistance during aging, while the rest of the resistance area remains free.

Abstract: A resistor having of an insulating substrate bearing a thin layer of the alloy CrSi.sub.x, where 1.ltoreq.x.ltoreq.5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.

Abstract: Thick-layer hybrid electronic printed circuits are formed by printing predetermined circuit pattern onto an insulating substrate by deposition of predetermined ink pattern thereupon, advantageously by silk-screening or masking, and then baking said ink circuit pattern, and repeating the deposition/baking steps as required, the subject forming process featuring use of an insulating ink comprising a non-conductive metallic oxide extender, desirably cuprous oxide, which ink is thus either potentially conductive or potentially resistive, and the development of such conductivity or resistivity, after baking, by treating the ink pattern with a reducing agent, desirably a borohydride, as to readily and quantitatively convert said metal oxide into a conducting metal.

Abstract: A composition for the preparation of thick film resistors comprising an admixture of finely divided particles of a conductive metal hexaboride and a crystallizable glass frit which is irreducible by the metal hexaboride containing at least 5 mole % of Ta.sub.2 O.sub.5 which is reducible by the metal hexaboride under normal firing conditions.

Abstract: Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

Abstract: A method of forming thick film resistor circuits whereby a non-hole metal, such as copper, requiring a reducing atmosphere is included with resistor material requiring an oxidizing atmosphere. A fritless conductor paste with a small percentage of silver is deposited and fired in air at a low temperature. Resistors are then deposited and fired in air. Subsequently, the conductor material is reduced at a sufficiently low temperature so as not to adversely affect the resistors.

Abstract: A thin film circuit including resistor elements and capacitor elements is prepared by forming a tantalum film for capacitor on an insulating substrate, forming a tantalum film for resistor over the substrate, covering a predetermined region of the tantalum resistor film with a titanium film, heat treating a resulting assembly, removing the titanium film, and then covering the predetermined region with a metal film to provide ohmic contact therebetween.

Abstract: A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the substrate, an intermediate layer, and an upper layer upon which the various photoresist compositions are located to define the electrode structures, the intermediate layer being composed of a metal which has different solubility characteristics than either the upper or lower metal layers so that the various layers can be selectively etched by means of suitable solvents.

Abstract: Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) and Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO.sub.2) covering the semiconductor substrate.

Abstract: A method for forming a thermal printing head comprising a base of electrically insulating material, a glaze layer formed on said base so as to form an elongated projection thereon, said glaze layer comprising a main portion and a portion integral with and extending from said main portion, at least one thermal printing element formed on said main portion of said glaze layer, and an area formed in said extending portion of said glaze layer to relieve said glaze layer of surface tension when glaze is sintered and then cooled to form said glaze layer on said base.

Abstract: A thin film resistance thermometer is manufactured to have a predetermined temperature coefficient of resistance while minimizing the amount of metal in the film. The process involves the production of a metal film deposit on an insulating substrate such that the film deposited has a bulk coefficient substantially higher than the desired coefficient with the film being deposited to a thickness that produces the desired coefficient.

Abstract: Improved medium and high value resistor inks are disclosed. The subject inks comprise indium oxide, a barium calcium borosilicate glass frit, a suitable organic vehicle and a temperature coefficient of resistance modifier selected from the group consisting of ferric oxide and vanadium oxide.

Abstract: This invention is concerned with the fabrication of thick film, RuO.sub.2 -based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B.sub.2 O.sub.3, 14-17% SiO.sub.2, and an effective amount up to 5% of WO.sub.3 or MoO.sub.3.

Abstract: The invention relates to a process for the manufacture of non-linear resistors (varistors) from thick-layer ceramic material, in particular on a hybrid circuit substrate, or any other device requiring that a predetermined temperature should not be exceeded during its manufacture.According to the invention, after crushing a ceramic material in order to obtain a very fine powder of varistor material, a powder is produced of conductive or semiconductive material able to assume the pasty state at a temperature lower than 850.degree. C. and a binder is incorporated therein to obtain a screen printing paste. The layer deposited by screen printing on a substrate such as glass, is dried and then heat treated so as to assure cohesion of the layer. This layer is either inserted between a previously deposited electrode and another electrode, or covered by two separate electrodes. The invention is particularly applicable to matrix access display screens.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: Low value resistor inks comprising a conductive component consisting of stannous oxide and molybdenum trioxide or a mixture of molybdenum trioxide and metallic molybdenum; a glass powder selected from the group consisting of a barium aluminum borate glass and a barium calcium borosilicate glass; and a suitable organic vehicle are improved by the addition of a TCR modifier. Cadmium oxide is added to raise the TCR value of the subject resistor inks, and ferric oxide, vanadium oxide or mixtures thereof is added to lower the TCR value thereof.

Abstract: Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

Abstract: A thin film strain gage structure (10, 110) for measuring the strain of an inflectible element (12, 112) wherein the gage is formed on a surface (15, 115) of the element and includes a sensing resistance (16, 116) and an adjusting resistance portion (21, 121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof.

Abstract: Improved air-fireable resistor and conductor inks useful in constructing multilayer integrated circuits on porcelain-coated metal substrates are provided. The subject inks comprise a barium calcium borosilicate glass frit, a suitable organic vehicle, and a functional component, i.e., ruthenium dioxide, in the resistor inks and one or more precious metals plus bismuth oxide in the conductor inks.

Abstract: A low-cost conductor, e.g. a printed circuit, is prepared by applying a mixture of a metallic powder and polymer on a substrate and curing the polymer, followed by an augmentation replacement reaction being effected to replace some of the metallic powder with a more noble metal in such a way that the total volume of deposited metal on the surface exceeds that of the original metal powder at that surface. This procedure produces contiguous layer of conducting metal on the substrate. The conductors thus formed can easily be soldered without leaching using a conventional tin-lead solders.

Abstract: Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

Abstract: Miniature electronic component parts such as capacitors or resistors are end conductively coated by use of a part handling plate having a multiplicity of passageways therethrough with walls coated by resilient material to grip the parts. A bank of pins in a press (a) are used to move the parts in the passageways, (b) are used to load the parts into the passageways through the use of a loading plate housing part receiving openings filled with parts by the use of vibration equipment, and (c) are used to discharge the parts from the passageways into the recesses of an unloading plate. The parts are moved in the passageways first to expose one end to be coated and then second to expose the other end of the parts to be coated.