Abstract: The present invention involves the hydrothermal treatment of nanostructured films to form high k PMOD™ films for use in applications that are temperature sensitive, such as applications using a polymer based substrate. After a PMOD™ precursor is deposited and converted on a substrate, and possibly after other process steps, the amorphous, nanoporous directly patterned film is subjected to low temperature hydrothermal treatment to densify and possibly crystallize the resulting high dielectric PMOD™ film. A post hydrothermal treatment bake is then performed to remove adsorped water.

Abstract: A servo-patterned magnetic recording medium, comprising: a magnetic layer having a surface with substantially uniform topography, the magnetic layer including a data zone and a servo pattern, the servo pattern comprising: (a) a first patterned plurality of regions of first, higher values of magnetic coercivity Hc and magnetic remanence-thickness product Mrt; and (b) a second patterned plurality of ion-implanted regions of second, lower values of Hc. and Mrt; wherein the second, lower values of Hc and Mrt are sufficiently lower than the first, higher values of Hc and Mrt as to permit sensing for enabling accurate positioning of a read/write transducer head in the data zone but sufficiently high for providing the medium with thermal stability, high amplitude of magnetic transition, and high signal-to-noise ratio.

Abstract: Wear-resistant and low-friction hard amorphous, diamond-like carbon coating (DLC) is formed directly on an eternal surface of a magnetic recording media sensor (MRMS). The coating demonstrates a high degree of hardness, low friction coefficient and moderate electric resistivity, providing abrasion-proof, low-clogging, static electricity-deterrent properties.

Abstract: The present invention relates to a method of forming the magnetic film having a magnetic easy axis in a pre-formed area. Especially, the present invention related to a method of forming a multiple magnetic easy-axis in a pre-formed magnetic film. It is an object of the present invention to overcome the drawbacks of the conventional magnetic film and to achieve ultrahigh density of the unit recording cell using the magnetic film. It is another object of the present invention to suggest a method of forming a magnetic film and a magnetic film device in which the exchange interaction and the magneto-static interaction between the neighboring areas are eliminated in order to accomplish ultrahigh density for storing data. The present invention presents first, a method of forming a uniaxial magnetic easy axis on the magnetic film. The magnetic moments of the treated recording area having an easy axis are automatically aligned to the axis without an external magnetic field.

Abstract: This invention comprises methods for making nanostructured and nanoporous thin film structures of various compositions. These films can be directly patterned. In these methods, precursor films are deposited on a surface and different components of the precursor film are reacted under selected conditions, forming a nanostructured or nanoporous film. Such films can be used in a variety of applications, for example, low k dielectrics, sensors, catalysts, conductors or magnetic films. Nanostructured films can be created: (1) using one precursor component and two reactions, (2) using two or more components based on differential rates of photochemical conversion, (3) using two precursors based on the thermal sensitivity of one precursor and the photochemical sensitivity of the other, and (4) by photochemical reaction of a precursor film and selected removal of a largely unreacted component from the film.

Abstract: Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.

Abstract: In the present invention, the problem of stability deterioration of the obtained conductive pattern substrate at the time of forming a conductive pattern by an additive method when a layer having reactivity remains on the substrate is to be solved. According to pattern exposure with a photo catalyst substrate 4 having a photo catalyst layer 3 laminated on a second substrate 5 superimposed onto a wettability changeable substrate 1 with a wettability changeable layer 3 laminated on a first substrate 2, a wettability pattern is formed. And furthermore, by adhering a conductive coating solution, or the like, a conductive pattern substrate without containing a photo catalyst can be manufactured.

Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

Abstract: The present invention includes a method of forming an aligned film on a substrate. The film is deposited and aligned in a single step by a method comprising the step of bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: A non-linear optical silica thin film (22) whose main material is SiO2—GeO2 is formed by irradiating positive or negative polar particles and polarization orientation is carried out in the silica thin film. For example, by repeating, while forming the silica thin film (22), forming the thin film in a state of irradiating positive particles, forming the thin film in a neutral state, such as irradiation of neutral particles or non-irradiation of particles, forming the thin film in a state of irradiating negative particles, and forming the thin film in a neutral state, a plurality of regions (22-1, 22-2, and 22-3) in different states of polarization orientation are formed in a direction of film thickness of the silica thin film (22). Distribution of charges arises in the silica thin film (22) being formed by irradiation of polar particles and polarization orientation is automatically carried out in the silica thin film (22).

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: An optical material including a crystalline silicon and FexSi2 in the form of dots, islands, or a film is provided. The FexSi2 has a symmetrical monoclinic crystalline structure belonging to the P21/c space group and is synthesized at the surface or in the interior of the crystalline silicon. The monoclinic structure corresponds to a deformed structure of &bgr;-FeSi2 generated by heteroepitaxial stress between the {110} plane of the FexSi2 and the {111} plane of the crystalline silicon. The value of x is 0.85≦x≦1.1. An optical element using the optical material is also provided.

Abstract: A personal ornament having a white coating layer comprises a base article made of a metal, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the base article. Another personal ornament having a white coating layer comprises a base article made of a nonferrous metal, an underlying plating layer formed on the surface of the base article, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the underlying plating layer.

Abstract: Methods, systems and computer program products for controlling plating pulse rectifiers are provided by identifying one of the plurality of plating pulse rectifiers as a master plating pulse rectifier and identifying at least one of the plurality of plating pulse rectifiers, other than the master plating pulse rectifier, as a slave plating pulse rectifier. A recipe comprising a pulse pattern is downloaded to the master plating pulse rectifier and the slave plating pulse rectifier. A synchronization signal is transmitted from the master plating pulse rectifier upon initiating the pulse pattern of the recipe to the at least one slave plating pulse rectifier so as to cause the slave plating pulse rectifier to initiate the pulse pattern of the downloaded recipe. Plating pulse rectifiers suitable for use as master/slave plating pulse rectifiers and systems incorporating such plating pulse rectifiers are also provided.

Abstract: A method of producing a patterned magnetic nanostructure is disclosed. The method includes providing a substrate having a non-magnetic single layer or multi layer film that can be converted into a magnetic state by annealing and/or mixing. The method further includes positioning a mask having a desired pattern and resolution associated with the patterned magnetic nanostructure on or over the film. The method additionally includes subjecting the mask-covered substrate to a beam of radiation (focussed or unfocussed) having sufficient energy to locally anneal and/or mix the non-magnetic or weak-magnetic single-layer or multi layer film. Because of the mask effect, only the desired portions of the non-magnetic film are exposed to the beam of radiation. As such, the desired portions of the non-magnetic film are changed from a non-magnetic to a magnetic state to produce an array of magnetic elements in a non-magnetic matrix. The size of each magnetic element is dependent on the resolution of mask.

Abstract: The solder pre-coating method including cleaning by dry etching a surface of a gold film on a surface of an electrode formed on a circuit board by covering the surface of the circuit board with a template having an opening; adding tackiness on the surface of the electrode after cleaning by making a tackiness adding compound react with the electrode surface; attaching solder powder on the tackiness added electrode surface; and forming a solder pre-coat layer on the electrode surface by melting the solder powder by heating. Another solder pre-coating method of the present invention adds tackiness on a surface of a gold film on a surface of an electrode after forming a metal film containing one of copper or nickel on the surface of the gold film. According to the present invention, as it eliminates the need for masking work on each individual circuit board in pre-coating solder, a partially solder pre-coated circuit board can be obtained simply and at allow cost.

Abstract: A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber 12 to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing 64. The outgassed material 64 is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber 12 to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.

Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

Abstract: A method and apparatus are provided for repairing clear defects in photomasks such as attenuated photomasks having a patterned MoSi film on a glass substrate. The method and apparatus use an energy source in the form of an energy beam to undercut the sidewalls of the clear defect forming a clear defect having angled sidewalls. A repair material is then deposited in the angled opening to repair the clear defect. In a preferred embodiment, two repair steps are used with the first repair step using a first repair material to deposit a first repair material on the angled sidewalls of the clear defect and a second step using a second repair material to contact the first repair material and to fill the remainder of the clear defect opening. An apparatus for repairing clear defects and photomasks repaired by the method and apparatus of the invention is also provided.

Abstract: A method for preparing a sample for observation, by the steps of: contacting a first predetermined area of the sample surface with an organic compound vapor while irradiating the first predetermined area with an ion beam to decompose the organic compound into a layer having a mask function, the layer covering the first predetermined area; and contacting a second predetermined area of the sample surface with an etching gas while irradiating the second predetermined area with an ion beam in order to remove material from the sample surface at the second predetermined area, wherein the second predetermined area includes at least part of the first predetermined area and the layer covering the first predetermined area prevents removal of material from the sample surface in the first predetermined area.

Abstract: A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

Abstract: A process for production of an actively antimicrobial surface for a substrate and for use in a biologically dynamic environment, such as for treating and preventing microbial infections, including a film consisting of at least an antimicrobial element and another electrochemically nobler element and which forms multitudinous galvanic cells with electrolyte-containing biological fluids, such as body fluids from wounds, etc., for releasing the antimicrobial element at the surface.

Abstract: The invention provides a system and a method for densifying a surface of a porous film. By reducing the porosity of a film, the method yields a densified film that is more impenetrable to subsequent liquid processes. The method comprises the steps of providing a film having an exposed surface. The film can be supported by a semiconductor substrate. When the film is moved to a processing position, a focused source of radiation is created by a beam source. The exposed surface of the film is then irradiated by the beam source at the processing position until a predetermined dielectric constant is achieved. The film or beam source may be rotated, inclined, and/or moved between a variety of positions to ensure that the exposed surface of the film is irradiated evenly.

Abstract: High temperature superconductive (HTS) integrated circuits can be fabricated in three ways according to the invention. First, a planar multiple layer HTS integrated circuit is fabricated using multiple HTS layers. The layers include altered regions which have been bombarded using ion implantation to destroy superconductivity of the altered regions without interrupting the lattice structure of the altered regions. Second, a planar multiple-layer HTS integrated circuit includes upper and lower HTS layers, each including central and opposing regions. A first implant energy is used to destroy superconducting properties of the opposing regions of the lower HTS layer without interrupting the lattice structure. A second implant energy is used to destroy superconducting properties of a top portion of the central region to define a contact. Third, a HTS integrated circuit is formed from a single HTS layer using three ion implantation steps and ions having first, second and third energies and range.

Abstract: The invention provides a system and a method for densifying a surface of a porous film. By reducing the porosity of a film, the method yields a densified film that is more impenetrable to subsequent liquid processes. The method comprises the steps of providing a film having an exposed surface. The film can be supported by a semiconductor substrate. When the film is moved to a processing position, a focused source of radiation is created by a beam source. The exposed surface of the film is then irradiated by the beam source at the processing position until a predetermined dielectric constant is achieved. The film or beam source may be rotated, inclined, and/or moved between a variety of positions to ensure that the exposed surface of the film is irradiated evenly.

Abstract: The present invention relates to a magnetic film having a magnetic easy axis in a preformed area, and a method of forming the magnetic film Especially, the present invention relates to a method of forming a multiple magnetic easy-axis in a preformed magnetic film and a magnetic film having multiple easy-axis by the same method of forming the multiple easy axis. It is an object of the present invention to overcome the drawbacks of the conventional magnetic film and to achieve ultrahigh density of the unit recording cells using the magnetic film. It is another object of the present invention to suggest a method of forming a magnetic film and a magnetic film device in which the exchange interaction and the magneto-static interaction between the neighboring areas are eliminated in order to accomplish ultrahigh density for storing data, The present invention presents first, a magnetic film (or area) having a magnetic easy axis and a method of forming a magnetic easy axis on the magnetic film.

Abstract: In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

Abstract: A multiple precipitation doping process for doping a semiconductor substrate (30) starts with forming an amorphous region (32) in the substrate (30). Through multiple laser exposures, multiple dopant precipitation films (52, 53) are formed on corresponding portions (34, 37) of the major surface (31) of the substrate (30) overlying the amorphous region (32). The substrate (30) is then annealed. The annealing process melts the amorphous region (32) and allows the dopants precipitated on the major surface (31) to diffuse into the substrate (30). The annealing process also crystallizes the semiconductor material the amorphous region (32). The substrate (30) becomes a single crystal semiconductor substrate with multiple doped regions (54, 57) therein. The depth of the doped regions (54, 57) is substantially equal to the depth of the amorphous region (32) before annealing.

Abstract: A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

Abstract: A buffer-layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The buffer-layer is formed by either a multilayer deposited on the substrate or by a plurality of sequentially deposited and annealed coatings deposited on the substrate. The plurality of sequentially deposited and annealed coating may comprise multilayer and single layer coatings. The multilayer deposited and annealed buffer layer coatings may be of the same or different material than the reflecting coating thereafter deposited on the buffer-layer.

Abstract: A substrate handling system auxiliary to a plasma sputtering system is described. The substrate handling system inserts an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask into a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks then are moved to a sputtering chamber where the substrate is coated by sputtering. Subsequently, the substrate handling system moves a processed substrate, and its accompanying inner mask and an outer mask, from the loadlock to an external disk change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Subsequently, another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition, so that the masks can be gripped without causing particulate contamination.

Abstract: In a method for forming the electrode pattern of a piezoelectric element for an ultrasonic motor, metal pattern masks made of a metal material of a low expansion coefficient are disposed on the surfaces of piezoelectric elements for the ultrasonic motor, and the electrode patterns are formed on the surfaces of the piezoelectric elements through the metal pattern masks by means of a vacuum evaporation device which is equipped with a physical assistance device for rendering physical assistance with ion beams or ion plating.

Abstract: A method of preparing a narrow photoresist line by first forming a resist pattern on a substrate, wherein a resist line is designed to have a width “w” in excess of a desired width “w1” The resist is then subjected to ionic bombardment with ionized particles in a direction normal to the planar surface of a resistant substrate. The ionic bombardment causes formation of a hardened “chemically less reactive” skin on the exposed top surface of the photoresist. The resist is then subjected to an isotropic etch procedure. Due to the hardened top surface of the narrow pattern, the side wall erode at a faster rate than the top, causing a narrowing of the line width, while retaining a more substantial photoresist thickness than would occur if the top surface would not be hardened in advance of the etch procedure.

Abstract: A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.

Abstract: In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

Abstract: A thin film disk and a method for producing the disk having an overcoat with two thickness regions. The thicker overcoat region can be used as a start/stop or loading zone and the thinner overcoat region can be used over the data recording area. This provides increased wear resistance while allowing improved magnetic performance through a reduction in the thickness of the overcoat over the data recording area. The dual thickness regions can be formed using different embodiments of the method. One method sputter deposits a relatively thick layer of overcoat material over the entire disk surface, masks off the portion of the disk for the thick layer, etches the unmasked area to reduce or eliminate the overcoat from the unmasked area, then deposits a second relatively thin layer of overcoat material over the entire surface.

Abstract: A polymeric film includes at least one irradiated water soluble layer. A process for making a water soluble film includes the steps of extruding a water soluble film; and irradiating the water soluble film. Using electron beam irradiation, a water soluble film's solubility rate can be increased.

Abstract: The uniformity of individual layers of multiple coating materials deposited on a substrate in a vacuum deposition process (such as for manufacturing mirrors for use in ring laser gyroscopes) is improved by an apparatus and method that include changing the masks placed in front of the substrate upon which the coating materials are to be deposited. Separate masks are tuned for each particular coating material to compensate for the unique plume shape of the material, and provide a uniform deposition of that particular coating material. Each mask is positioned in front of the substrate when the material for which the mask has been tuned is being deposited. The masks are changed when the coating material is changed, without venting the chamber.

Abstract: A method for depositing carbon films on membranes used in masks for X-ray or corpuscular projection, e.g. electron or ion beam, lithography is proposed in which sputtering is used and the membranes serving as sputter substrates are positioned in the off-axis configuration relative to the sputter targets. The carbon films thus produced have a compressive stress of the order of 10 MPa or below. For modifying the properties of carbon films after deposition, e.g. the deactivation of chemically reactive sites or stabilization of stress, ion bombardment with helium ions can be employed. This method anticipates changes in the film due to initial irradiation and serves to reach a plateau in which the stress varies only a little, i.e. within about 1 MPa or less.

Abstract: A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region.

Abstract: An improved coated orthopaedic implant component is disclosed. The implant may be coated with platinum, iridium or other metals for improved characteristics. Ion beam coating orthopaedic parts by ion implanting the parts with zirconium ions while the parts are immersed in an oxygen-containing background gas is also disclosed. The adhesion of the graded interface zirconium oxide surface layer so formed is further improved by the initial removal of surface contamination using an ion bombardment and the deposition of an intermediate layer of platinum or similar metal or silicon between the orthopaedic metal component and the zirconium oxide. Furnace heating results in atomic interdiffusion to enhance adhesion between the surfaces. The zirconium oxide provides a low friction, low wear articulating surface. The graded interface may be characterized by a blackish color and a transition between pure zirconium oxide and pure intermediate layer that extends over a thickness of hundreds of Angstroms.

Abstract: The present invention relates to a method for treating a substrate surface. The substrate surface is coated with a thin film of a treating agent, which is capable of enhancing or reducing its affinity towards a metal precursor by exposure to an arbitrary kind of radiation beam. In a subsequent metal deposition step utilizing the metal precursor, the metal is selectively deposited on the exposed or unexposed areas, depending on the kind of treating agent. (FIG.

Abstract: A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.

Abstract: An ion implant process is disclosed for forming an amorphous structure in a semiconductor metallization barrier layer, which barrier may be a pure metal barrier, such as titanium, tantalum, tungsten, or metal compound barrier, such as titanium nitride, or titanium-tungsten. The implant is preferably an ion of the barrier metal being used, which is implanted such that an amorphous (texture-less non-crystalline) layer is produced. Other implant species, such as nitrogen or noble gases, such as neon or argon may also be used. Subsequent deposition of the interconnect metallization (typically Al or Cu) results in an interconnect metal structure having a high degree of texture which is characterized by a very narrow distribution of crystallographic orientations in the Al or Cu film. The highly textured Al or Cu metallization results in optimizing the interconnect metal for maximum electromigration performance.

Abstract: A deposition process provides selective areal deposition on a substrate surface having separate areas of different materials comprises forming a plasma over the substrate, injecting coating species into the plasma by either of sputtering or gaseous injection, adding a reactive gas for altering surface binding energy at the coating surface, and biasing the substrate during deposition to bombard the substrate with ionic species from the plasma. Surface binding energy is altered, in the general case, differently for the separate areas, enhancing selectivity. Bias power is managed to exploit the alteration in surface binding energy. In the case of gaseous injection of the coating species, and in some cases of sputtering provision of the coating material, the temperature of the substrate surface is managed as well. In an alternative embodiment, selectivity is to phase of the coating material rather than to specific areas on the substrate, and a selected phase may be preferentially deposited on the substrate.

Abstract: A method for forming a patterned photoresist layer. There is first provided a substrate. There is then formed over the substrate a blanket photoresist layer. The blanket photoresist layer is then implanted with a first ion beam to form an ion implanted blanket photoresist layer. The first ion beam employs a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second beam. The ion implanted blanket photoresist layer is then patterned to form the ion implanted patterned photoresist layer. The method may be employed in selective high energy beam processing of the substrate. The method is particularly suited to selective high energy ion implant processing of semiconductor substrates employed within integrated circuit microelectronics fabrications.

Abstract: This invention concerns a method for protecting surfaces of diamond, diamondlike carbon and of other forms of carbon, from the effects of oxidation which can occur at high temperatures in an oxidizing environment. The method involves exposing the surface of the diamond or other carbon material to energetic ions of, or containing, an element or elements which can be caused to react with the carbon to form a thin layer containing a carbide compound that is itself more oxidation resistant than the diamond or other carbon material and which is able to serve as a barrier to prevent or delay penetration of oxygen to the thereby protected diamond or other carbon material.

Abstract: A method is disclosed for ion beam treating orthopaedic parts by ion implanting the parts with aluminum ions while the parts are immersed in an oxygen-containing background gas. When the parts are at sufficiently elevated temperature, a highly adherent layer of aluminum oxide is grown which provides a low friction, low wear articulating surface. The interface between the semi-pure aluminum oxide and the substrate orthopaedic part consists of a composition which gradually grades with depth between the grown aluminum oxide and the pure substrate material. This interface has a thickness dependent on the processing parameters, typically hundreds of Angstroms. In an alternative embodiment, the thickness of the alumina layer may be increased by simultaneously depositing aluminum oxide on the parts.