Abstract: The present invention relates to the isolation of recombinant and/or biotherapeutic proteins for capture or clarification from cell culture fluid using copolymers. The copolymers used according to the process of the present invention comprise hydrophobic and anionic residues.

Abstract: The invention relates to the use of gelatin and a cross-linking agent to provide a medical glue which forms a cross-linked gelatin gel in an area of application of the human or animal body. According to the invention, (i) the gelatin and the cross-linking agent are mixed with each other to form the cross-linking medical glue which is then administered to the area of application; or (ii) the gelatin and the cross-linking agent are made available in separate form and are administered, simultaneously or one after the other, to the area of application while forming the cross-linking medical glue.

Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

Abstract: There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %.

Abstract: A monomer for a hardmask composition represented by the following Chemical Formula 1,

Abstract: A liquid crystal drop apparatus for dropping liquid crystal on a substrate includes a liquid crystal container filled with liquid crystal, a nozzle formed at an lower end of the liquid crystal container for dropping the liquid crystal of the liquid crystal container, and a control unit for controlling the nozzle when the nozzle drops the liquid crystal.

Abstract: Silver halide photographic photosensitive materials are disclosed. A silver halide photographic photosensitive material has a support, and on or above the support, a red-sensitive silver halide emulsion layer, a first interlayer, a green-sensitive silver halide emulsion layer, a second interlayer, and a blue-sensitive silver halide emulsion layer in this order from the support, wherein the first interlayer includes a chelating agent and another silver halide photographic photosensitive material has, in the following order, a support, and provided on or above the support, a first interlayer containing a chelating agent, a blue-sensitive silver halide emulsion layer, a second interlayer, a red-sensitive silver halide emulsion layer, a third interlayer, a green-sensitive silver halide emulsion layer, and a protective layer.

Abstract: A thinner composition for a reduced resist coating process includes an alkyl lactate, cyclohexanone, and an alkyl acetate, wherein an alkyl substituent of the alkyl acetate is a C1 to C5 non-ether based alkyl group.

Abstract: The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Abstract: A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.

Abstract: There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %.

Abstract: An upper layer film-forming composition includes a resin and a solvent component. The resin is soluble in a developer. The solvent component includes first solvent which has a boiling point of 180 to 280° C. at 101.3 kPa and a vapor pressure of 0.001 to 0.1 kPa at 20° C. The upper layer film-forming composition is used to form an upper layer film on a photoresist film.

Abstract: The present invention provides a developer that can efficiently remove photosensitive resin components dispersing in a developing solution. The present invention provides a developer comprising: a feeder 31 that feeds a developing solution 5 to a printing raw plate 1; a dispersing-object-filter 13, wherein the developing solution 5 in which a photosensitive resin composition separated from a photosensitive resin composition layer of the printing raw plate 1 is dispersed, is passed through the dispersing-object-filter 13 to flocculate the photosensitive resin composition dispersing in the developing solution 5; and a flocculating-object-filter 15 that removes the flocculated photosensitive resin composition from the developing solution 5 passed through the dispersing-object-filter 13.

Abstract: Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, and a crosslinking agent in a solvent system. The methods involve applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, followed by light exposure and developing, during which the light-exposed portions of the imaging layer are removed, along with portions of the hard mask composition adjacent said light-exposed portions. The size of the hard mask composition structures are controlled by the development rate, and they yield feature sizes that are a fraction of the imaging layer feature sizes, to give a pattern that can ultimately be transferred to the substrate.

Abstract: A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.

Abstract: An embodiment of the method of forming a pattern, comprises (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) processing the exposed film with an organic processing liquid, wherein the processing liquid contains an organic solvent whose normal boiling point is 175° C. or higher, the organic solvent being contained in the processing liquid in a content of less than 30 mass %.

Abstract: A conductive film producing method includes a metallic silver forming step of exposing and developing a photosensitive material having a 95-?m-thick long support and thereon a silver salt-containing emulsion layer, thereby forming a metallic silver portion to prepare a conductive film precursor, and a smoothing treatment step of subjecting the conductive film precursor to a smoothing treatment to produce a conductive film. In the smoothing treatment, the conductive film precursor is pressed by first and second calender rolls facing each other, and the first calender roll is a resin roll to be brought into contact with the support. The method satisfies the condition of 1/2?P1/P2?1, wherein P1 represents a conveying force applied when the conductive film precursor is introduced to an area where the smoothing treatment step is conducted, and P2 represents a conveying force applied when the smoothing-treated conductive film is discharged from the area.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3:

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Abstract: Silver halide color photographic elements having multiple color imaging layers contain a permanent, pre-formed magenta dye that is present in an amount to provide a status M green density greater than 0.005 per mg/m2. This dye provides minimum density at lower cost and enables lower dye levels and a reduced organic load that may lead to improved film physical properties.

Abstract: Silver halide color photographic elements having multiple color imaging layers contain a permanent, pre-formed yellow colorant that is present in an amount to provide a status M blue density greater than 0.003 per mg/m2. This colorant provides minimum density at lower cost and can be incorporated with minimal or no organic solvents and thus enable a reduced organic load that may lead to improved film physical properties.

Abstract: Graded absorption silicon based antireflective coating compositions are described.

Abstract: A liquid crystal drop apparatus for dropping liquid crystal on a substrate includes a liquid crystal container filled with liquid crystal, a nozzle formed at an lower end of the liquid crystal container for dropping the liquid crystal of the liquid crystal container, and a control unit for controlling the nozzle when the nozzle drops the liquid crystal.

Abstract: A method of creating a graded anti-reflective coating (ARC) layer on a thin film is described. The method includes forming the thin film on a substrate, forming an ARC layer on the thin film, and applying a solvent to the ARC layer causing it to swell. A photo-resist layer is formed on the swollen ARC layer. A mixing layer is formed by the diffusion of components from the swollen ARC layer to the photo-resist layer and vice versa. The mixing layer has optical qualities that are distinct from those of either of the ARC layer or the photo-resist layer. The mixing layer forms the graded ARC layer.

Abstract: Method, apparatus, and composition of matter suited for use with, for example, immersion lithography. The composition of matter includes hafnium dioxide nanoparticles having diameters less than or equal to about 15 nanometers. The apparatus includes the composition of matter, a light source, a platform for supporting a work piece, and a lens element. The method includes providing a light source, providing a lens element between the light source and a work piece, providing the composition of matter between the lens element and the work piece, and exposing the work piece to light provided by the light source by passing light from the light source through the lens element and the composition of matter to the work piece.

Abstract: A method of producing a liquid crystal emulsion composition which has a viscosity of 30,000 mPa·sec or more at a 2-hold dilution and an improved stability, includes admixing a hydrophilic surfactant which is a polyoxyethylene polyoxypropylene alkyl ether having an HLB of 10 to 20 with a hydrophilic surfactant having an HLB of 13 or more which is comprised of a polyoxyethylene fatty acid derivative; admixing the resulting admixture with a mixture of 5 to 10 parts by weight of the thus combined surfactants with 5 to 30 parts by weight of an oil component; admixing the resulting admixture with a mixture of 40 to 80 parts by weight of a water-soluble polyvalent alcohol and 8 to 40 parts by weight of water; and heating, homogeneously mixing and then cooling the thus obtained admixture.

Abstract: Example embodiments of the present invention relate to methods of treating and removing a photoresist pattern and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of treating a photoresist pattern and a method of removing a photoresist pattern formed using a photoresist composition suitable for argon fluoride (ArF). In a method of removing a photoresist pattern, an ozone vapor including a water vapor and an ozone gas may be provided onto the photoresist pattern to remove a hydrophobic group from a photoresist resin included in the photoresist pattern. A cleaning solution may be provided to make the photoresist pattern water-soluble. A cleaning process may be performed on the photoresist pattern to remove the photoresist pattern. The photoresist pattern may be effectively removed without an increased processing time and/or damage to a substrate.

Abstract: A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer for crosslinking is useful in an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Abstract: A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Abstract: A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography.

Abstract: Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1?1/(1+m+n)?0.7; 0.3?m/(1+m+n)?0.9; and 0.0?n/(1+m+n)?0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.

Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: The invention provides a color photographic element comprising at least one light-sensitive silver halide emulsion layer or a non silver-containing light-insensitive layer, in which at least one of these layers contains a colorless imidazole compound of formula (I) that undergoes less than 10% chemical or redox reaction with oxidized developer and which enables the photographic speed of the element to be increased by at least 0.

Abstract: A patterned electrical conductor having improved conductivity and controllably high resolution track and gap widths is obtained by exposing, to a desired conductive pattern, a pressure-sensitive or photosensitive element comprising a support and a pressure-sensitive or photosensitive material coated thereon being sensitive to the exposure (e.g. the wavelength of exposing radiation) and capable of providing a latent image upon exposure, and then developing the exposed element to form a developed element having a metal (e.g. silver) image thereon and then electroless plating and/or electroplating the metal image with a second metal (e.g. silver) whilst subjecting the developed element to ultrasonic agitation.

Abstract: A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided. The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).

Abstract: An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).

Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.

Abstract: A method of producing an organic silver salt dispersion, the method comprising: mixing a first aqueous solution including a water-soluble silver ion supplier and a second aqueous solution including an alkali metal salt of an organic acid to form an organic silver salt dispersion; wherein, the mixing is conducted in the presence of at least one compound selected from polyacrylamide and derivatives of polyacrylamide, and at least 10 mass % (in terms of silver quantity) of the organic silver salt in the organic silver salt dispersion is formed by simultaneous addition of the first aqueous solution and the second aqueous solution to an aqueous medium followed by mixing.

Abstract: An object of the present invention is to provide a fixing member which includes a surface layer including fluorine rubber having an ether bond and a polysiloxane having a polyether structure, and which has excellent adhesion between the surface layer and a substrate. A fixing member is provided including a substrate, an adhesion layer and a surface layer disposed in contact with the adhesion layer, wherein the surface layer includes fluorine rubber having an ether bond and a polysiloxane having a polyether structure, and wherein the adhesion layer contains a polyorganosiloxane resin and an existence ratio of carbon combining with oxygen to silicon combining with oxygen in the adhesion layer is 1.0 or more and 20.0 or less.

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C:

Abstract: A dope containing cellulose acylate as a main content of polymer is cast on a front surface of a moving belt in a method of producing a film from a solution. A drying apparatus is confronted to a back surface of said belt to evaporate a solvent in the gel-like film. Further, a condensers are confronted to a cast surface of said gel-like film to condense a solvent vapor for recovery. A wind speed above and near the gel-like film is from 0.01 m/s to 0.5 m/s, and the belt is transported downwards at the casting position PS. When d (mm) is a distance between the casting surface and each condenser, Tw (° C.) is a temperature of each condenser, and Ts (° C.) is a temperature of the casting dope, conditions are satisfied: Q=(Ts?Tw)/d and 5<Q<100. The obtained film is excellent in thickness uniformity and optical properties, and therefore adequate for the optical film.

Abstract: There is provided an anti-reflective coating forming composition for use in a lithography of the manufacture of semiconductor devices and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. The anti-reflective coating forming composition comprises a compound having at least two vinyl ether groups, an alkali-soluble compound having at least two phenolic hydroxy groups or carboxyl groups, a photoacid generator, and a solvent.

Abstract: A method for forming color images comprising subjecting a silver halide color photosensitive material to a development processing in the presence of a compound (A) defined below, wherein the silver halide color photosensitive material having a blue-sensitive unit, a green-sensitive unit and a red-sensitive unit, each of which comprises at least one silver halide emulsion layer, and at least one non-light-sensitive layer on a support, compound (A): a heterocyclic compound having one or two hetero atoms, the heterocyclic compound being capable of increasing speed of the silver halide color photosensitive material by the presence thereof in comparison to the case where the heterocyclic compound is absent.

Abstract: A process to produce a polymer liquid crystalline composition having temperature dependency of desired circular polarization selective reflection wave length property by only mixing two or more kinds of starting materials having different weight-average molecular weight comprising, mixing two or more kinds of rigid rodlike helical polymers with chiral side chains having different weight-average molecular weight synthesized from same molecules and having same repeating unit whose molecular weight distribution defined by the ratio of weight average molecular weight/number average molecular weight is from 1.00 to 1.25, and controlling weight average molecular weight, number average molecular weight and molecular weight distribution by mixing ratio.

Abstract: An object of the present invention is to provide a method of processing silver halide color paper that ensures (a) promptness such that finished prints can be handed at shop to customers, (b) small installation area for mini-labs, (c) processing solution stability capable of withstanding slack seasons, (d) normal image quality, (e) small replenishment solution amount and (f) inhibition of tar generation and sulfuration phenomenon occurrence. This object can be attained by a concentrated processing composition for color paper which has a concentrated processing composition for bleach replenishment of 3.0 or less in pH containing 0.3 mol/L or more of EDTA.Fe(III) ammonium, 0.3 mol/L or more of a sulfinic acid compound of specified structure and 0.5 mol/L or more of ammonium bromide and a concentrated processing composition for fixative replenishment of 4.0 or more in pH containing 0.7 mol/L of ammonium thiosulfate and 0.

Abstract: A silver halide color photographic light-sensitive material, having at least one yellow dye image-forming layer, at least one magenta dye image-forming layer, and at least one cyan dye image-forming layer, each provided on a transparent support, which shows 3.0 or more maximum transmission densities for the respective layers upon area exposure with an exposure time of 10?4 sec, and shows a transmission density in a range of 0.95 to 1.05 when color development is started in 30 minutes after exposure with an exposure amount that gives a density of 1.0, when the light-sensitive material is subjected to color development started in 5 minutes after exposure; and an image-forming-method using the same.