Abstract: Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.

Abstract: A system and method for performing alignment of a substrate using alignment marks on the backside of a substrate supported by a movable chuck is disclosed. The system includes an imaging optical system arranged such that the movable chuck can position one end of the optical system either adjacent the front surface of the substrate or near the front surface but outside the perimeter of the substrate. In one embodiment, secondary optical systems are arranged within the chuck at the chuck perimeter so as to be in optical communication with corresponding alignment marks. The chuck is movable so that the imaging optical system can be placed in optical communication with the second optical system and image the alignment marks onto a detector. The detector converts the alignment mark images into digital electronic images, which are stored in a computer system and processed. The chuck then moves the substrate to exposure locations based on the result of processing the images.

Abstract: Disclosed are first and second embodiments of a 3-channel probe-plate structure of the fiber-optic interferometer, wherein low-coherent-length light from a superluminescent light-emitting diode is split by a tree splitter into three light branches which are coupled as separate light inputs to the probe-pate structure by single-mode, polarization-preserving optical fibers. For each of the 3 channels, the first embodiment of the probe-plate structure comprises an integrated polarizing lithium-niobate Y splitter-modulator for deriving separate reference-arm light and probe-arm light.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g.

Abstract: A jewelry connection system utilizing an elastic bent stem having a narrow center section is inserted into a hollow tube such that binding of the stem ends in the tube creates an elastic releasable friction bond (binding) between the stem and tube pieces. A controlled amount of binding can be introduced by controlling the degree of non-colinearity between mating surfaces such that when using a high modulus material, such as Titanium, the use of this system for body piercing openings such as ear and nose rings is successful without reduced risk of loss of jewelry pieces due to vibration, because threaded connections in this arrangement are avoided. Configurations according to the invention can be used in a variety of tiny jewelry pieces as long as a stem can be inserted into a stem receiving member.

Abstract: A passive radiator and method is disclosed which improves frequency response linearity and greatly reduces the possibility that wobble of a passive radiator which will occur without the displacement limitations of a spider containing speaker structure. Two substantially fiat surfaced speaker diaphragms are tied together and supported by two sets of surrounds oriented in opposite directions to reduce the non-linearity in the surround spring rate Hand improve low frequency sound generation. A vent (pressure relief system is provided to improve the frequency response and range of motion of the passive speaker system. A progressive surround roll arrangement provides for improved sound quality by utilizing localized position based extension while maintaining the range of maximum travel during resonance.

Abstract: A multi-purpose controller for variables which closely controls such variables to set point by making sequential corrections to the level of input to the system of the variable based on: system response time, relationship of controller output to the variable, deviation of the variable from set point, and change in system load as determined by change in error and change in system input. The controller has a self tuning capability and can provide generation of the set point according to a set of variable parameters. It can be configured as a stand alone controller, as an intelligent Input/Output device for another intelligent device, or be resident in another intelligent device such as a programmable controller, computer or other microprocessor based device.

Abstract: Provided is a test system and method that permits automatically interchanging a plurality of tools to seamlessly perform various functions on a sample. Each tool is mounted in an assembly and the sample is mounted on a chuck. A path is defined in a plane along which the chuck is transported with the tools each positioned in the same attitude with respect to, and distance from, that path. The chuck is transported along the path to a position adjacent one of the tools and rotated, if necessary, to position a point of interest on the sample immediately adjacent the tool. Once positioned, the tool engages the sample to perform a test. Following testing, the tool is disengaged from the sample and the process repeated as necessary for each additional test to be performed on the sample.

Abstract: A method of forming a silicide region (80) on a Si substrate (10) in the manufacturing of semiconductor integrated devices, a method of forming a semiconductor device (MISFET), and a device having suicide regions formed by the present method. The method of forming a suicide region involves forming a silicide region (80) in the (crystalline) Si substrate having an upper surface (12) and a lower surface (14). The method comprises the steps of first forming an amorphous doped region (40) in the Si substrate at or near the upper surface, to a predetermined depth (d). This results in the formation of an amorphous-crystalline interface (I) between the amorphous doped region and the crystalline Si substrate. The next step is forming a metal layer (60) atop the Si substrate upper surface, in contact with the amorphous doped region. The next step involves performing backside irradiation with a first radiation beam (66).

Abstract: The present invention includes a unique irrigation sprinkler system with a unique sprinkler head design; a unique method of defining the planted area to be served by the sprinkler head; a unique method for determining when that planted area needs to be watered; a unique way of providing even coverage throughout the planted area when being watered; the ability to use one sprinkler head to individually water multiple, non-overlapping planted areas; a unique way of addressing multiple sprinkler heads in the same sprinkler system; and a unique method for remotely determining the integrity of the sprinkler system.

Abstract: A miniaturized construction and slit end orifice configurations of a constricted glow discharge chamber and method are disclosed. The polarity and geometry of the constricted glow discharge plasma source is set so that the contamination and energy of the ions discharged from the source are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a homogeneous linear plasma stream with contamination below practical detection limits. Other configuration include a hollow chamber with an anode outside the chamber located opposite its discharge constriction orifice. The constriction orifice may be circular or a slit and can be aligned to form a linear array for processing web substrates.

Abstract: The invented method produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes a step of producing an amorphous region on the silicon body using ion implantation, for example, a step of forming a metal layer such as titanium, cobalt or nickel in contact with the amorphous region, and a step of irradiating the metal with intense light from a source such as a laser, to cause metal atoms to diffuse into the amorphous region to form an alloy region with a silicide composition. In an application of the invented method to the manufacture of a MISFET device, the metal layer is preferably formed with a thickness that is at least sufficient to produce a stoichiometric proportion of metal and silicon atoms in the amorphous region of the gate of the MISFET device.

Abstract: A shallow trench isolation (STI) structure (170, 300), formed in a silicon substrate (110) for use in sub-micron integrated circuit devices, for providing enhanced absorption of a wavelength of laser light during laser annealing. The STI structure includes a shallow trench (140) having a depth of 0.5 &mgr;m or less etched in the silicon substrate, and an optical blocking member (174, 304) that includes an insulator (144, 224) formed in the shallow trench and designed to reflect or absorb the wavelength of laser light to mitigate redistribution of the dopant and/or recrystallization of a portion of the silicon substrate. Methods of forming the optical blocking member are also disclosed.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A simple −1X, catadioptric projection relay system (e.g., a modified Wynne-Dyson relay) is combined with a linear scanning and object and image indexing systems to provide good imagery over a useful field which is two or more times wider than the field size of the projection system and arbitrarily long. The projection system has opposed and parallel object and image planes and produces an image in which object and image vectors in one direction are parallel and in a normal direction are opposed. The reticle and substrate are clamped and scanned together in the parallel direction and are indexed in the normal direction by equal and opposite amounts between scans. An example shows how a 2.5 micron resolution, i-line projection system with a 300 mm wide field could be used to expose a 550 mm wide substrate In two scans to yield a very high throughput.

Abstract: A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect.

Abstract: A high-speed semiconductor transistor and process for forming same. The process includes forming, in a Si substrate (10), spaced apart shallow trench isolations (STIs) (20), and a gate (36) atop the substrate between the STIs. Then, regions (40,44) of the substrate on either side of the gate are either amorphized and doped, or just doped. In certain embodiments of the invention, extension regions (60,62 or 60′,62′) and deep drain and deep source regions (80, 84 or 80′,84′) are formed. In other embodiments, just deep drain and deep source regions (80, 84 or 80′, 84′) are formed. A conformal layer (106) is then formed atop the substrate, covering the substrate surface (11) and the gate. The conformal layer can serve to absorb light and/or to distribute heat to the underlying structures. Then, at least one of front-side irradiation (110) and back-side irradiation (116) is performed to activate the drain and source regions and, if present, the extensions.

Abstract: A simplified and cost reduced process for fabricating a field-effect transistor semiconductor device (104) using laser radiation is disclosed. The process includes the step of forming removable first dielectric spacers (116R) on the sides (120a, 120b) of the gate (120). Dopants are implanted into the substrate (100) and the substrate is annealed to form an active deep source (108) and an active deep drain (110). The sidewall spacers are removed, and then a blanket pre-amorphization implant is performed to form source and drain amorphized regions (200a, 200b) that include respective extension regions (118a, 118b) that extend up to the gate. A layer of material (210 is deposited over the source and drain extensions, the layer being opaque to a select wavelength of laser radiation (220). The layer is then irradiated with laser radiation of the select wavelength so as to selectively melt the amorphized source and drain extensions, but not the underlying substrate.

Abstract: An method of and apparatus (10) for performing laser thermal processing (LTP) of a workpiece (74) having one or more workpiece fields (78). The apparatus includes a pulsed, solid state laser light source (14) having more than 1000 spatial modes (M) and capable of emitting one or more pulses of radiation with a temporal pulse length between 1 nanosecond and 1 microsecond, a workpiece stage (70) for supporting the workpiece, and an illumination optical system having an exposure field (64). The system is arranged between the laser light source and the workpiece stage so as to illuminate within the exposure field at least one of the one or more workpiece fields with the one or more pulses of radiation, with an irradiance uniformity of less than ±5%. The method and apparatus is particularly well-suited for LTP processing of workpieces which require a single pulse or only a few pulses of high-irradiance radiation.