Abstract: The present invention is a method and apparatus that uses a microscopic height variation positioned relative to a semiconductor device to scan a target on the device to produce an electrical signal representative of height variations of first and second periodic structures of the target in a selected path across the device, and a computing and control system to provide translation between the microscopic height variation detector and the target on the device in a selected path, and to calculate any offset between the first periodic structure and the second periodic structure of the target from the electrical signals from the microscopic height variation detector. The first periodic structure of the target is on a first layer of the device, and the second periodic structure, that complements the first periodic structure, is on a second layer of the device at a location that is adjacent the first periodic structure.

Abstract: A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect.

Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a filed oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its filed oriented in the positive Z direction. Additionally, up to four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: A system to utilize a non-deterministic shared local bus to transport signals to and from TDM signal channels via processing devices that use a pseudo clock signal derived from local bus transfers to synchronize those data transfers with the highly accurate clock of the TDM bus.

Abstract: A multi-purpose controller for variables which closely controls such variables to set point by making sequential corrections to the level of input to the system of the variable based on: system response time, relationship of controller output to the variable, deviation of the variable from set point, and change in system load as determined by change in error and change in system input. The controller has a self tuning capability and can provide generation of the set point according to a set of variable parameters. It can be configured as a stand alone controller, as an intelligent Input/Output device for another intelligent device, or be resident in another intelligent device such as a programmable controller, computer or other microprocessor based device.

Abstract: An air-probe structure of an air-gauge nozzle that defines an air-probe bore having an elongated, relatively small-area output tip (e.g., 0.3.times.1.3 millimeters) situated at the air-probe structure's output end. Such an air-gauge nozzle is useful in controlling the distance between the bore's output tip and a rowbar workpiece (employed in an optical microlithographic pole trimming step of the fabrication process for thin-film heads) in accordance with the air pressure measured by the air gauge. The air-probe structure's output end preferably also comprises a relatively large-area protective manifold (e.g., 6.times.7 millimeters) surrounding the elongated, relatively small-area output tip.

Abstract: The technology used in the present invention is acousto-ultrasonics (AU), in which a transmitted signal, at a controlled frequency is injected into a specimen with one transducer and received at another location by another transducer, permitting evaluation of the condition of the material in the signal path. In the experiments that were made using the present invention, the material within the press was a particleboard mat having the signal injected into the edge of one platen and received at the edge of the second platen. The AU signal received at the second platen is initially in response to pressure changes in the mat and subsequently follows the progression of internal bonding of the material. Since the propagated wave through the mat reacts to resin curing during the last phase of pressing, changes in material or press variables are reflected directly in shifts of the curve received at the second platen.

Abstract: The present invention is a new target, and associated apparatus and methods, for determining offset between adjacent layers of a semiconductor device. The target disclosed here includes a first periodic structure to be placed on a first layer of the device and a second periodic structure, that complements the first periodic structure, placed on a second layer of the device at a location that is adjacent the first periodic structure when the second layer is placed on the first layer. Any offset that may occur is detected by the present invention either optically, micro-mechanically or with electron beams using any of various methods and system embodiments.

Abstract: The present invention is a hybrid technique for finding defects on digitized device images using a combination of spatial domain and frequency domain techniques. The two dimensional spectra of two images are found using Fourier like transforms. Any strong harmonics in the spectra are removed, using the same spectral filter on both spectra. The images are then aligned, transformed back to the spatial domain, and subtracted. The resulting spectrally-filtered difference image is thresholded and analyzed for defects. Use of the hybrid technique of the present invention to process digitized images results in the highest-performance and most flexible defect detection system. It is the best performer on both array and random devices, and it can cope with problems such as shading variations and the dark-bright problem that no other technique can address.

Abstract: The invented apparatus is a relatively small-volumed chamber useful for processing a substrate. The apparatus includes a reference member with a substantially flat surface. The apparatus also includes a stage member with a surface that supports the substrate, and that has a gas bearing surrounding this support surface. Gas flows through the bearing are regulated to generate a seal of the substrate from ambient gases upon bringing the gas bearing close to the reference member's flat surface. The seal generated by the gas bearing can also be used to contain process gas in proximity to the substrate. Such process gas can be introduced into and exhausted from the chamber through an inlet and outlet, respectively, defined in the reference member. The apparatus can include a window fixed in the reference member. Patterned light or a particle beam can be directed through the window to the contained substrate to cause selective reactions to occur thereon.

Abstract: Techniques for improving manufacturing process control based on inspection of manufactured items at intermediate process steps, based on clustering and binning of defect data. Additionally, the using the defect data produced by inspection machines to improve manufacturing process control specifically relating to semiconductor manufacturing process control. Examples described here relate specifically to semiconductor wafers, but may be generalized to any manufacturing process.

Abstract: A method for fabricating a plurality of shallow-junction metal oxide semiconductor field-effect transistors (MOSFETs) on a selected area of a silicon wafer, in the case in which the MOSFETs are spaced from one another by substantially transparent isolation elements. The method includes the step of flooding the entire selected area with laser radiation that is intended to effect the heating to a desired threshold temperature of only the selected depth of a surface layer of silicon that has been previously amorphized to this selected depth and then doped. This threshold temperature is sufficient to melt amorphized silicon but is insufficient to melt crystalline silicon.

Abstract: An apparatus in accordance with this invention includes an alignment mark that is formed in a substrate. The alignment mark extends across a dice line so that, upon dicing the substrate, the mark is exposed in the substrate's side edge. The mark is formed at a predetermined distance from a position at which a feature is desired to be formed on the substrate's side edge using a mask. Accordingly, the mark is a positional reference that can be used for highly accurate placement of the feature on the side surface of the substrate with the mask. Preferably, the mark is formed of metal or other material enhanced to a size that is readily detectable by an alignment system with which the mark is to be used. The invention also includes methods for making the alignment mark.

Abstract: A dynamic CMOS register implemented on a silicon die that requires the use of only two input signals, a data-in signal and an inverse clock signal. Each embodiment includes a self-timed clock circuit having a CMOS PNN tier of FETs with a P channel and two N channels connected serially (sources of P channel at one end connected to bus and N channel at the other end connected to ground, and gate of end N channel connected to bus), a first inverter to receive inverse clock with output connected to gate of P channel, a second inverter connected to drain of P channel, and a NOR gate with one input receiving inverse clock, second input connected to output of second inverter and output connected to gate of center N channel. In one embodiment, a single self-timed clock circuit interfaces with and controls a plurality of CMOS registers.

Abstract: Adaptive arrays with an automatic adaptive loop gain control to reduce the degradation in performance in reducing the effects of multipath and interference in communications receivers when the gain of any of the adaptive loops change with a change in the average level of any of the input signals of the adaptive array. As the input level of any of the input signals of the adaptive array changes, the associated adaptive loop gain control(s) reduces the change in the adaptive loop gain from the optimum gain value to improve adaptive array performance. When signal conditions and/or component configurations cause the levels of the input signals to be different from input to input of the adaptive array, the performance of the adaptive array is improved further by also equalizing the input signals.

Abstract: A bi-directional communications system for bypassing a local exchange carrier telephone system for conveying data between at least one terminal unit and a switching unit that has the functionality of a Class 5 central telephone office switch that is connected to a public switched telephone network. The system includes a relay transceiver where the signals from the terminal units are converted bi-directionally between the signal format of the terminal units and fixed length compliant ATM cells when the signal format of the terminal units is other than a fixed length compliant ATM cell format.

Abstract: A high intensity discharge lamp without mercury is disclosed radiating a selected spectrum of which can be almost entirely in the visible range from an envelope that contains a sulfur containing substance. The lamp utilizes a signal source that generates an excitation signal that is externally coupled to the exterior surface of the envelope to excite the enclosed sulfur containing substance. Various embodiments of the lamp use electrodes adjacent the envelope to couple the excitation signal thereto with the face of the electrodes shaped to complement the shape of the exterior surface of the envelope. Two shapes discussed are spherical and cylindrical. To minimize filamentary discharges each envelope may include an elongated stem affixed to the exterior thereof whereby a rotational subsystem spins the envelope.

Abstract: Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in crystalline silicon and (2) shadowing and diffraction-interference effects by an already fabricated gate of a field-effect transistor on incident laser radiation. Such problems, in the past, have prevented prior-art projection gas immersion laser doping from being effectively employed in the fabrication of integrated circuits comprising MOS field-effect transistors employing 100 nm and shallower junction technology.

Abstract: The method of this invention produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes the steps of producing an amorphous region on the silicon body using ion implantation, for example, forming or positioning a metal such as titanium, cobalt or nickel in contact with the amorphous region, and irradiating the metal with intense light from a laser source, for example, to cause metal atoms to diffuse into the amorphous region. The amorphous region thus becomes an alloy region with the desired silicide composition. Upon cooling after irradiation, the alloy region becomes partially crystalline. To convert the alloy region into a more crystalline form, the invented method preferably includes a step of treating the alloy region using rapid thermal annealing, for example.