Abstract: The present invention relates to a heat sink. More particularly, the present invention relates to a heat sink used for radiating heat from an integrated circuit package such as a micro-processor arranged in a portable type electronic apparatus such as a notebook type personal computer and also used for radiating heat from a hard disk unit used in an electronic apparatus. The heat sink comprises: a heat transmitting member for transmitting heat generated by a heating component; a holding section for holding the heat transmitting member; and a heat sink body having a space in which a cooling fan having at least blades and a drive motor is embedded, wherein a portion of the holding section for holding the heat transmitting member, the portion being located below the space, is cut out.
Abstract: A power-on reset signal preparing circuit including a pulse width preparing circuit for generating a pulse for resetting a main circuit based on a driving voltage output from a driving circuit based on the output voltages from two charging circuits with different charging times. The driving circuit may be a switching circuit utilizing charged potential difference of the two charging circuits, a gate circuit utilizing a charging time difference of the two charging circuits, or a differential transistor pair utilizing the charging potential difference or time difference of the two charging circuits. The pulse width preparing circuit may be formed by two wiring lines, connected between the output of the driving circuit and the ground and running substantially parallel to each other, whereby the capacitors may be small in size.
Abstract: A rubber glove comprising a main rubber layer and an inner covering layer, bonded to the main rubber layer, containing resin particles is disclosed. The resin particles are partially exposed on the skin-contacting surface of the inner covering layer to an extent such that, among resin particles visually observed in unit area of the skin-contacting surface, resin particles having a maximum particle diameter of 2-20 &mgr;m have a total projected area ratio A of 5-50%, as defined by the formula: A(%)=B/C×100, where B is total projected area of resin particles with a maximum particle diameter of 2-20 &mgr;m, and C is the unit area. The rubber glove can be easily donned and pulled off, and resin particles do not fall or do fall off only to a very slight extent upon donning or pulling off, and, when the inner covering layer is placed in contact with each other, the layer does not easily stick to each other.
Abstract: A graft with a stent, includes: a stent composed of a resilient wire having a supporting frame comprising a wire having a zigzag shape forming top and bottom portions; and tubes being made of plain woven of polyester resin fibers and having a thickness of 20 &mgr;m to 100 &mgr;m. The tubes are disposed between inner surface and outer surface of the stent, and the inner tube surface and the outer tube surface are partially adhered to each other by a polyester resin. The graft is free from hindrance of blood from flowing by kink and/or arctation in a corner such as an arched portion, a curved portion, and meandering portion, is resistant to expansion and contraction and bending, and is fit to a shape of a blood vessel of a human body. The graft is usable for a total percutaneous intravascular surgery because it can be inserted into a sheath having a small diameter because of a thin artificial blood vessel, and is prone not to have leakage from a connection with a blood vessel.
Abstract: A battery-connecting plate consists of busbars for connecting batteries together and a wire protector which holds in a predetermined layout therein terminals and their connection wires for detecting voltage of desired ones of the batteries. The busbars and the wire protector are fixed in a resin plate by insert molding, with the busbars arranged in correspondence with the batteries and with the terminals held in contact with related ones of the busbars. The busbars, the voltage detecting terminals and others are integrally incorporated in the connecting plate so that these components are less exposed to the outside. The connecting plate is thus safe and easy to mount.
Abstract: A semiconductor device comprises a semiconductor element having electrodes and metal bumps are attached to the electrodes. The metal bumps include copper cores and gold surface layers covering the cores. In addition, the metal bumps may include gold bump elements and solder bump elements connected together.
Abstract: A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units.
May 9, 2000
Date of Patent:
February 5, 2002
Japan Science and Technology Corporation
Abstract: A numerical control apparatus (1 or 20) comprising pecking operation controlling means (12) which make a feed drive system (14) retracted when a cutting load detected by cutting load detecting means (7) exceeds a reference value during a drilling process, the cutting load detecting means (7) comprise a bite load detecting section (8) to detect the cutting load at a biting stage wherein a tool bites a work piece, and a stationary load detecting section (10) to detect the cutting load after the biting stage. The numerical control apparatus (1 or 20) comprises pecking judgement means (11) to judge that the feed drive system (14) should be retracted when a fluctuation load exceeds a specified reference value wherein the fluctuation load is obtained by reducing the bite load from the detected stationary load. When it is judged that the feed drive system (14) should be retracted, the pecking operation controlling means (12) make the feed drive system (14) retracted.
Abstract: A chip inductor is made up of a coiled conducting wire and a magnetic member which is formed by sintering and in which the coiled conducting wire is embedded. Both end portions of the coiled conducting wire are exposed to both end surfaces of the magnetic member. External electrodes are formed with conducting thin films and are connected to respective end portions of the coiled conducting wire. An inorganic material is interposed in a clearance between winds of both end portions of the conducting wire and external surfaces of the magnetic member and a clearance between adjoining winds of the conducting wire.
Abstract: A semiconductor device manufacturing method comprises the steps of forming solder bumps on an underlying metal film of a semiconductor device, and placing the semiconductor device and the solder layer in a reduced pressure atmosphere containing formic acid to form the solder bumps. Accordingly, the solder bumps can be formed without flux generating voids in the solder layer. Furthermore, the cleaning required after the solder bumps are formed can be omitted.
Abstract: There is provided a hydraulic turbomachine comprising a housing, one or more impellers arranged rotatably around an axis within the housing, one or more resin-made diffusers provided around the one or more impellers for defining diffuser channels around the impellers, respectively, one or more support members provided within the housing and engaged under pressure with corresponding ones of the diffusers for securely supporting the corresponding diffusers in the direction of the above-noted axis within the housing, and elastic members held between surfaces of the support members and the diffusers in the above-noted direction. An O-ring receiving groove is formed in each of the surfaces of the diffusers in such a manner that the groove surrounds the axis, and an O-ring is placed in the groove as the elastic member.
Abstract: A main clutch 9 is interposed between an input shaft 3 and an output shaft 5, and a normally engaged pilot clutch 10 is interposed between an output member 7c of an overrunning clutch 7 and the output shaft 5. An input member 7a of the overrunning clutch 7 is made to freely rotate relative to the input shaft 3, and a cam mechanism 11 is provided for generating a thrust force by virtue of the difference in rotational speed between the input shaft 7 and the input member 7a, whereby the main clutch 9 is brought into engagement with this thrust force so generated.
Abstract: A packaging machine includes a bottom breaker which has first to third prefolding members (41) to (43). The third prefolding member (43), serving to prefold a fold forming portion (27) by bending this portion (27) outward along a base part thereof, is pivotally movable from a nonoperative position P0 to a second operative position P2 via a first operative position P1. The fold forming portion (27) is moved with a first bottom panel (21) by the operation of the second prefolding member (42) so as to be brought into contact with the third prefolding member (43) and thereby bent outward while the third prefolding member (43) is pivotally moved from the nonoperative position P0 toward the first operative position P1. The third prefolding member (43) is pivotally moved from the first operative position P1 toward the second operative position P2 after the operation of the second prefolding member (42) to thereby bend the fold forming portion (27) through an increased angle.
Abstract: A swash plate for a swash plate compressor, wherein aluminum alloy containing 12 to 60% of Si and, as required, 0.1 to 30% of Sn is sprayed onto the iron or aluminum base plate of the swash plate compressor to form a seizure-resisting and abrasion-resisting surface layer dispersed with granulated Si.
Abstract: A semiconductor device and its manufacture method wherein the semiconductor substrate has first and second insulating films, the first insulating film being an insulating film other than a silicon nitride film formed at least on a side wall of a conductive pattern including at least one layer of metal or metal silicide, and the second insulating film being a silicon nitride film formed to cover the first insulating film and the upper surface and side wall of the conductive pattern. The first insulating film may be formed to cover the upper surface and side wall of the conductive pattern. A semiconductor device and its manufacture method are provided which can realize high integrated DRAMs of 256 M or larger without degrading reliability and stability.
Abstract: A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted.
Abstract: This invention relates to a non-contact developing method for applying a driving voltage, which is an AC voltage superimposed on a DC offset voltage, to a non-contact developing roller to develop toner, and which prevents the selective developing phenomenon from occurring. The velocity ratio between the flying velocity of toner with a large particle size and the flying velocity of toner with a small particle size changes according to the driving frequency f of the AC voltage (45) applied to the developing roller, so by setting the driving frequency f of the AC component within a range where selective developing of the toner does not occur, it is possible to effectively prevent the selective developing phenomenon from occurring.
Abstract: On a setting cart which is movable back and forth between a setting station and a vehicle body assembly station, there are provided floor panel setting members, side sill receiving members and side panel forcing members which force side panels toward a floor panel from a lateral outward. In the setting station, the floor panel and the side panels which are set in position on the setting cart are transferred to a jig which is disposed in a side portion of the vehicle body assembly station. The side panels are welded to the floor panel by welding robots which are disposed at a level below the jig. In the above-described arrangement, the side sill receiving members and the side panel forcing members are set on the setting cart so as to be retractable into shunted positions free from interference with the welding robots in welding operation. The welding work by the welding robots can thus be started without waiting for the returning of the setting cart to the setting station.
Abstract: A bar code reader comprising a photodetecting section for receiving light reflected from bar codes scanned with scanning light and for outputting an electric signal corresponding to the intensity of light received, a demodulating section for demodulating section for demodulating the electric signal and for generating demodulation bar code data, a storage section for storing demodulation bar code data, a timing section which starts measuring a first time when the demodulation bar code data is stored in the storage section, an data judging section for judging which area, out of first and second areas to which the scanned range scanned with scanning light is divided, is scanned to generate the modulation bar code data demodulated by the demodulating section, a judging section for judging whether or not demodulated bar code data demodulated prior to demodulation bar code data and stored in the storage section coincides with the demodulation bar codes, and a judging section for judging that the demodulation bar co
Abstract: A ferritic-austenitic two-phase stainless steel consisting essentially of, in wt. %, over 0% to not more than 0.05% of C, 0.1 to 2.0% of Si, 0.1 to 2.0 of Mn, 20.0 to 23.0% of Cr, 3.0 to 3.9% of Ni, 0.5 to 1.4% of Mo, over 0% to not more than 2.0% of Cu and 0.05 to 0.2% of N, the steel further containing, when desired, at least one element selected from the group consisting of over 0% to not more than 0.5% of Ti, over 0% to not more than 0.5% of Nb, over 0% to not more than 1.0% of V, over 0% to not more than 0.5% of Al, over 0% to not more than 0.5% of Zr, over 0% to not more than 0.5% of B, over 0% to not more than 0.2% of a rare-earth element, over 0% to not more than 1.0% of Co, over 0% to not more than 1.0% of Ta and over 0% to not more than 1.0% of Bi, the balance being substantially Fe. Cr, Mo and N are within the range defined by the following expression [i]: