Abstract: A process for the manufacturing of an integrated circuit having DMOS-technology power devices and non-volatile memory cells provides for forming respective laterally displaced isolated semiconductor regions, electrically insulated from each other and from a common semiconductor substrate, inside which the devices will be formed; forming conductive gate regions for the DMOS-technology power devices and for the memory cells over the respective isolated semiconductor regions. Inside the isolated semiconductor regions for the DMOS-technology power devices, channel regions extending under the insulated gate regions are formed. The channel regions are formed by an implantation of a dopant along directions tilted of a prescribed angle with respect to a direction orthogonal to a top surface of the integrated circuit, in a dose and with an energy such that the channel regions are formed directly after the implantation of the dopant without performing a thermal diffusion at a high temperature of the dopant.

Abstract: A CMOS device and process are disclosed in which two types of N-channel MOS transistors are provided, one being formed in a P-well and one being formed outside the P-well where the relatively low doping concentration of P-type substrate serves as a channel defining region. This second type N-channel transistor an support higher junction voltages due to the lower p-type doping concentration than is possible for the first type N-channel transistor formed in the higher doping concentration P-well. A mask is provided to prevent boron doping in the substrate at the site of the high voltage transistor during the implantation step which defines the P-well.

Abstract: A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity as to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cutoff region is formed by an N.sup.+ -type enriched base region arranged between the emitter region and the collector region.

Abstract: A programming voltage is supplied to a control gate of a non-volatile memory cell via a control gate line. A supply voltage is coupled to a first plate of a capacitor and a reference voltage is coupled to a second plate of the capacitor. The supply voltage is then uncoupled from the first plate and the reference voltage is uncoupled from the second plate. Next, the reference voltage is coupled to the first plate to generate the programming voltage on the second plate.

Abstract: The switch of this invention has two conduction terminals and basically consists of the parallel coupling, across the two conduction terminals, of a first N-channel MOS transistor and second P-channel MOS transistor. The first MOS transistor will be conducting when the signal applied to the conduction terminals has a first polarity, and the second MOS transistor will be conducting when the signal applied to the conduction terminals has a second polarity. Advantageously, if two unidirectional conduction circuit elements are respectively connected in series with the main conduction paths of the two MOS transistors, the drain/body junctions of the latter will never be conducting regardless of the way the switch is connected.

Abstract: The current flowing through a cell to be read, forming part of a nonvolatile memory array and presenting a characteristic with a predetermined slope, is amplified N times and compared with a reference current presenting a two portion characteristic: a first portion extending between a predetermined threshold value and a trigger value, and presenting a slope equal to that of the memory cell characteristic, and a second portion extending from the trigger value, and presenting a slope amplified N times with respect to that of the cell characteristic and therefore equal to the amplified slope of the cell.

Abstract: A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.

Abstract: A memory array is divided, at the design stage, into a plurality of elementary sectors; depending on the specific application and the requirements of the user, the elementary sectors are grouped into composite sectors of desired size and number; a correlating unit memorizes the correlation between each composite sector and the elementary sectors; and, to address a composite sector, the relative address is supplied to the correlating unit which provides for addressing the elementary sectors associated with the addressed composite sector on the basis of the memorized correlation table.

Abstract: A method for programming a two-level polysilicon EEPROM memory cell, which cell is implemented in MOS technology on a semiconductor substrate and comprises a floating gate transistor and a further control gate overlying the floating gate with a dielectric layer therebetween, provides for the application of a negative voltage to the control gate during the cell write phase. This enables the voltages being applied across the thin tunnel oxide layer to be distributed so as to reduce the maximum amount of energy of the "holes" and improve the oxide reliability. In addition, by controlling the rise speed of the impulse to the drain region during the write phase, and of the impulse to the control gate during the erase phase, the maximum current flowing through the tunnel oxide can be set and the electric field being applied to the tunnel oxide kept constant, thereby the device life span can be extended.

Abstract: A method for programming a two-level polysilicon EEPROM memory cell, which cell is implemented in MOS technology on a semiconductor substrate and comprises a floating gate transistor and a further control gate overlying the floating gate with a dielectric layer therebetween, provides for the application of a negative voltage to the control gate during the cell write phase. This enables the voltages being applied across the thin tunnel oxide layer to be distributed so as to reduce the maximum amount of energy of the "holes" and improve the oxide reliability. In addition, by controlling the rise speed of the impulse to the drain region during the write phase, and of the impulse to the control gate during the erase phase, the maximum current flowing through the tunnel oxide can be set and the electric field being applied to the tunnel oxide kept constant, thereby the device life span can be extended.

Abstract: A plug contact process wherein, after contact holes are etched, an adhesion layer (such as Ti/TiN) and a filler metal (such as tungsten) are deposited overall. A two-stage etch is then used: First, the filler metal is etched preferentially with respect to the adhesion layer, until an endpoint signal first indicates that said adhesion layer is exposed. No overetch is used at this stage. Thereafter a nonpreferential etch is used to clear residues of the filler metal, while also uniformly reducing the height of the adhesion layer. This prevents the tops of the plugs in the contact holes from being recessed. Aluminum (or other metal) is then deposited and patterned (using a stack etch to remove the undesired portions of the adhesion layer too) to implement the desired wiring pattern. This process thereby reduces voids, and resulting metallization defects, in a process with high-aspect-ratio contacts. In addition, the residual adhesion layer helps to reduce electromigration.

Abstract: A method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cell being used as a reference current generator for generating a reference current which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix of the memory device. The method comprises a first step in which the reference memory cell is submitted to a change in its threshold voltage, and a second step in which the threshold voltage of the reference memory cell is verified. The second step provides for performing a sensing of the reference memory cell using a memory cell with known threshold voltage belonging to the memory matrix as a reference current generator for generating a current which is compared by the sensing circuit with the current sunk by the reference memory cell.

Abstract: A voltage step-up circuit with regulated output voltage, comprises a voltage divider and a current-absorption circuit connected between the output terminal of the circuit and ground. A control circuit connected to the divider drives the switching of the current-absorption circuit.

Abstract: A pulse generator has an input and two outputs at which to respectively generate pulses in relation to different types of signal edges received at the input of the generator. The generator provides two distinct logic circuit blocks of the sequential type, the blocks being mutually independent for generation of the pulses at the two outputs. In this manner it is possible to easily control the characteristics of the pulses. In addition, if two blocks are connected with appropriate and simple logic networks, it is possible in the generation phase to impose conditions between the pulses at the two outputs in a simple manner and with a certain freedom.

Abstract: A management unit for microcontrollers equipped with a decoder for a plurality of interrupt channels, the unit being connected to a central processing unit of the microcontroller to decode and transfer thereto a single interrupt digital signal through the decoder, and comprises a first circuit portion for selecting homolog pairs of channels incorporating a modular chain of elements, each having a respective channel pair connected thereto. The first or selection portion is associated with a second decoding circuit portion, and the interrupt signal is a reform of the channel interrupt vector carrying higher priority in the channel pair selected by the chain.

Abstract: A page-mode semiconductor memory device comprises a matrix of memory cells arranged in rows and columns, each row forming a memory page of the memory device and comprising at least one group of memory cells, memory page selection means for selecting a row of the matrix, and a plurality of sensing circuits each one associated with a respective column of the matrix. The memory cells are multiple-level memory cells which can be programmed in a plurality of c=2b(b>1) programming states to store b information bits, and the sensing circuits are serial-dichotomic sensing circuits capable of determining, in a number b of consecutive approximation steps, the b information bits stored in the memory cells, at each step one of said b information bits being determined, said at least one group of memory cells of a row forming a number b of memory words of a memory page.

Abstract: .?.A circuit comprising a switch series connected to a load; a first and second current recirculating branch alternately connectable parallel to the load, for reducing the current in the same; and a logic control unit for opening and closing the switch and recirculating branches, so that the load is supplied with a current rising to a peak value and then falling rapidly to and oscillating about a lower hold value; a transistor being provided for reducing the voltage supplied to the load by the first recirculating branch at the end of the fast fall phase, so as to eliminate uncontrollable operating zones and prevent the load current from falling below the hold value..!..Iadd.A device for driving an inductive load such as a fuel injector includes a drive switch and a voltage regulator that are coupled to the inductive load. The device also includes a control circuit that is coupled to the voltage regulator, the drive switch, and the inductive load.

Abstract: A device synchronizes an internal signal with respect to a reference signal, each signal comprising pulses normally occurring at a rated frequency. The device uses a phase comparator to analyze the phase of the internal signal and the reference signal and produce one logic state if the phase of the internal signal is in advance of the phase of the reference signal and a second logic state otherwise. A programmable frequency divider divides an internal clock signal by a first number if the phase comparator signal produces the first logic state or by a second number if the phase comparator produces the second logic state. A multiplexer provides the programmable divider with either the first number or the second number depending on the logic state produced the phase comparator. The device also includes a storage element for sequentially storing a predetermined number of the latest logic states of the phase comparator.

Abstract: The circuit comprises a first switching circuit which receives at an input a system clock normally provided for the operation of the integrated circuit and produces at an output a machine clock normally coincident with the system clock, circuitry for clamping the first switching circuit responsive to a firing signal of the serial operational analysis device determines which state the machine clock is clamped in and second switching circuit which receives at an input the system clock and is responsive to the firing signal to produce a scanning clock which repeats the system clock in an inverted or non-inverted manner according to the state in which the machine clock has been clamped.

Abstract: A sense circuit for reading EPROM and ROM type memory cells employs a circuit for generating an offsetting current which is exempt of error during transients and which thus permits to achieve a reduced access time. On the other hand, the sense circuit maintains the intrinsic advantages of a current-offset sensing architecture which is represented by a substantially unlimited operating voltage range toward the maximum value VCC.sub.max. The current generating circuit is driven by means of a supplementary row of cells which is decoded at every reading and which replicates, during transients, the behaviour of the row selected for the reading.