Abstract: A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400.degree. C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts is typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

Abstract: A memory for storing a plurality of words of data. The memory is constructed from one or more storage blocks. Each storage block includes a plurality of storage words, each storage word storing one of the words of data. Each storage word includes a plurality of single bit storage cells. The single bit storage cells include a ferroelectric capacitor and a pass transistor having a gate, source, and drain. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode, the layer of ferroelectric material being sandwiched between the top and bottom electrodes. One bit of data is stored in the direction of polarization of the ferroelectric material in contact with the bottom electrode. The bottom electrode is connected to the source of the pass transistor. The top electrode of each single bit storage cell is part of a continuous conducting layer covering all of the ferroelectric capacitors in the storage block.

Abstract: A magnetic memory cell for storing binary encoded data and a memory constructed from these memory cells. The memory cell stores information in the direction of magnetization of a torroidal layer of magnetic material. The memory cell is constructed from a structure having a top electrode, a soft layer which includes a planar sheet of a soft magnetic material, a hard layer which includes a planar sheet of a hard magnetic material, and a bottom electrode, the soft and hard layers being sandwiched between the top and bottom electrodes. The various layers are torroids. The hard and soft materials are chosen such that the magnitude to the magnetic field needed to magnetize the hard magnetic material is greater than the magnitude of the magnetic field needed to magnetize the soft magnetic material. The memory cell also includes a write circuit that generates first and second magnetic fields.

Abstract: A printing composition that is adapted for printing on computer printers and the like. The printing composition includes a backing sheet and a printing sheet. The printing sheet includes an electret which is reversibly bound to the backing sheet. In one embodiment of the invention, the printing sheet is coated with an ink absorbing coating. The electret can be constructed from materials such as polypropylene or polyethylene that have been subjected to electrostatic fields.

Abstract: A dual cycle engine which includes both a steam turbine and a gas turbine. The engine includes an air compressor and a combustion chamber connected to the air compressor for burning fuel with air from the air compressor to generate a first gaseous output which drives a gas turbine. The engine also includes a heat recovery system for recovering heat from the gaseous output of the gas turbine after the gaseous output has passed through the gas turbine. The heat recovery system includes a heat exchanger for extracting heat from the gaseous output and for heating an input water stream to generate steam. The steam is heated further in a superheater that burns fuel and air at the same pressure as the combustion chamber to generate a second gaseous output that is combined with the output of the combustion chamber prior to the output from the combustion chamber being passed through the gas turbine. The steam from the superheater is expanded in a steam turbine to generate work therefrom.

Abstract: A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.

Abstract: A method and apparatus for mechanically disrupting a layer of skin having a known thickness without substantially disrupting underlying dermis layers below the layer of skin in question so as to facilitate the delivery of compounds across the disrupted layer. The apparatus includes a cutter having a plurality of microprotrusions having a height chosen with respect to the layer of skin that is to be disrupted and a stop for preventing the apparatus from penetrating the skin beyond a predetermined distance. In the preferred embodiment of the present invention, the microprotrusions include blades that generate cuts in the layer of skin. The cuts are generated by moving the apparatus parallel to the surface of the skin either at the time of application, during the normal movements of the individual wearing the apparatus, or both. In the preferred embodiment of the present invention, the appropriate length of blade is determined for each individual and delivery site on that individual.

Abstract: A sense amplifier for comparing the resistance of a reference cell connected to a reference bit line to the resistance of a data cell connected to a data bit line. The amplifier includes a first terminal for connecting the sense amplifier to the reference bit line and a second terminal for connecting the sense amplifier to the data bit line. A reference current to voltage amplifier is connected to the first terminal for generating a reference voltage related to the current flowing through the reference bit line and for maintaining the first terminal at a reference potential when the current flowing through the reference bit line is less than a first current value. A data current to voltage amplifier is connected to the second terminal for generating a data voltage related to the current flowing through the data bit line and for maintaining the second terminal at the reference potential when the current flowing through the data bit line is less than a second current value.

Abstract: A magnetic memory cell for storing binary encoded data and a memory constructed from these memory cells. A memory cell according to the present invention stores information in the direction of magnetization of a layer of magnetic material. The memory cell is constructed from a structure having a top electrode, a soft layer which includes a planar sheet of a soft magnetic material, a hard layer which includes a planar sheet of a hard magnetic material, and a bottom electrode, the soft and hard layers being sandwiched between the top and bottom electrodes. The hard and soft materials are chosen such that the magnitude to the magnetic field needed to magnetize the hard magnetic material is greater than the magnitude of the magnetic field needed to magnetize the soft magnetic material. The memory cell also includes a write circuit that generates first and second magnetic fields. The first and second magnetic fields are parallel to the planar sheet of the soft layer.

Abstract: A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Abstract: A communication system for transmitting data comprising first and second data streams on a communication link having a communication channel of fixed bandwidth. The first and second data streams have first and second error tolerances, respectively, the first error tolerance being greater than the second error tolerance. The communication system includes a transmitter and a receiver, the transmitter transmitting data on the communication link for receipt by the receiver. The transmitter includes circuitry for dividing the communication channel into a plurality of sub-bands. In the preferred embodiment of the present invention, each sub-band has a bandwidth chosen such that distortions introduced by the communication link in the sub-band may be represented by an attenuation coefficient and phase shift.

Abstract: A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.

Abstract: A structure for mounting an oil-sink motor in an oil tank is disclosed wherein the tank includes a door pivotably connected thereto. The structure includes a hinge fixedly connected to the door. A support is fixedly connected to the hinge and extends to a bottom of the tank. A "T"-shaped motor carriage which is fixedly attached to the motor, is fixedly engaged with a wall of the support defining a slot and an opening cooperatively forming a "T"-shaped configuration.

Abstract: A high density non-volatile ferroelectric-based memory based on a ferroelectric FET operated in a two terminal write mode. Storage words may be constructed either from one or two bit storage cells based on a ferroelectric FET. A memory using either the one or two bit storage cells includes a plurality of word storage cells organized into a rectangular array including a plurality of columns and rows. Each of the word storage cells includes N single bit memory cells. Each of the single bit memory cells includes a pass transistor and a ferroelectric storage element. All of the gate electrodes in the circuit are connected to a common gate electrode, and all of the source electrodes are connected to a common source electrode. If the memory is built from two bit storage cells as described herein, each storage cell is one half of a two bit storage cell.

Abstract: A gas turbine engine having an air compressor and a combustion chamber connected to the air compressor for burning fuel with air from the air compressor. The combustion chamber also has water and/or steam as input. The water and/or steam is combined with the gases generated by the burning of the fuel to generate a gaseous output that drives first and second turbines. A heat recovery system recovers heat and water from the gaseous output after the gaseous output has passed through the turbines. The water is used as the water source for the combustion chamber and for cooling the turbines. In the preferred embodiment of the present invention, the heat recovery system utilizes a supercritical heat exchanger. Some of the recovered heat is preferably utilized to drive a third expander.

Abstract: A memory based on a ferroelectric FET, the ferroelectric FET includes a gate electrode, a layer of ferroelectric material, layer of semiconducting material, a source electrode and a drain electrode. The layer of ferroelectric material is sandwiched between the gate electrode and the layer of semiconducting material, the source and drain electrodes being in contact with the layer of semiconducting material and spaced apart from one another. The memory includes a circuit for setting the ferroelectric FET to one of two states. The first state is set by applying a first voltage to the source and drain electrodes and a second voltage to the gate electrode. The second state is set by applying a third voltage to the gate and drain electrodes and fourth voltage to the source electrode. This arrangement reduces the number of pass transistors needed per ferroelectric FET to one plus a simple pulsing circuit that must be included with each word of memory.

Abstract: An improvement in a data communication link between a server site and a client site. The server site transfers data packets to the client site, each data packet causing an acknowledgment packet to be sent from the client site to the server site. Denote the ratio of the average number of bits in the data packets to the average number of bits in the acknowledgment packets by R. The communication link includes a multi-channel communication link having a plurality of data channels. Each data channel provides communication in one direction between the server site and the client site, each of the channels having a data carrying capacity characteristic of that data channel.

Abstract: A method for operating a computer converts a word processing file to a computer program source file, which generates an output stream when run. The word processing file includes a linear sequence of characters having segments marked by beginning and ending tags. The method of the present invention translates the linear sequences of characters in the word processor file that are not surrounded by the tags to output statements in the computer program source file. The output statements cause the computer program generated from the source file, when executed, to reproduce the linear sequences of characters from the word processor file not surrounded by the tags in an output stream generated by the computer program. The method translates the linear sequences of characters in the word processing file that are surrounded by predetermined tags into computer source code statements.

Abstract: A decoder and an encoder for extracting a subset of symbols from, or inserting a subset of symbols into, a communication channel in which M symbols are transmitted as the amplitudes of M sinusoidal carriers. The decoder recovers K symbols, S.sub.p . . . S.sub.p+K-1, from an analog signal generated by modulating M sinusoidal carriers for a frame period. Each carrier is modulated with an amplitude proportional to the value of one of M symbols, the i.sup.th carrier being modulated by symbol S.sub.i. The K symbols are a contiguous subset of the M symbols. The decoder includes a down-converter for down-converting to the modulated signal on the communication channel to generate a down-converted signal in which the carriers corresponding to S.sub.p . . . S.sub.p+K-1 occupy frequencies starting from 0. An analog-digital converter generates K time-domain samples in each frame period from the down-converted signal. These time-domain samples are converted to K frequency-domain values representing the symbols S.sub.p . .

Abstract: A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.