Abstract: A microtip of a field emission device cathode (10) may be fabricated by forming a dielectric layer (18) on an upper surface of a resistive layer (16). A gate layer (20) is formed on the dielectric layer (18). An opening is formed in the gate layer (20) and a microtip cavity (28) is formed in the dielectric layer (18). The microtip cavity (28) extends through the opening in the gate layer (20) to the resistive layer (16). Layers of metal are formed on the gate layer (20) and the resistive layer (16) such that a microtip (30) is formed within the microtip cavity (28). Finally, polishing is performed to remove a portion of the overburden or layers of metal on the gate layer (20). The polishing continues until the microtip (30) is exposed.

Abstract: A data storage device consisting of at least two series connected resonant tunneling diodes (RTD1, RTD2) with capacitors (C1 ,C2) coupled thereacross. By coupling a time varying voltage V(t) across the series connected diodes, one the diodes can be selectively switched from a state below its peak current to a stable point above its peak current. The diode which switches state is controlled by the slope of the time varying voltage V(t). Cells consisting of at least two or more resonant tunneling diodes may be connected in series and can store up to 2.sup.N binary states where N is the number of resonant tunneling diodes in the cell.

Abstract: An anode plate 50 for use in a field emission flat panel display device comprises a transparent planar substrate 58 having a plurality of electrically conductive, parallel stripes 52 comprising the anode electrode of the device, which are covered by phosphors 54.sub.R, 54.sub.G and 54.sub.B. A substantially opaque, electrically insulating material 56 is affixed to substrate 58 in the spaces between conductors 52, acting as a barrier to the passage of ambient light into and out of the device. The electrical insulating quality of opaque material 56 increases the electrical isolation of conductive stripes 52 from one another, reducing the risk of breakdown due to increased leakage current. Opaque material 56 preferably comprises glass having impurities dispersed therein, wherein the impurities may include one or more organic dyes, selected to provide relatively uniform opacity over the visible range of the electromagnetic spectrum.

Abstract: To prevent degradation of field emission in a field emission device (FED) (10) resulting from the accumulation of contaminating impurities on the surface (42) of the microtips (26) of the FED (10), a high voltage pulse is applied at a cathode voltage control (46) connected between a grid conductor layer (24) and a metal mesh (18) of the FED (10). Upon application of the pulse, the impurities are desorbed from the surface (42) of the microtips (26) and are captured by a getter (44), which binds the impurities to its surface.

Abstract: A field emission device cathode (10) may be fabricated by forming a dielectric layer (14) on an upper surface of a resistive layer (12). A gate layer (16) is formed on the dielectric layer (14). An opening is formed in the gate layer (16) and a microtip cavity (18) is formed in the dielectric layer (14). The microtip cavity (18) extends through the opening in the gate layer (16) to the resistive layer (12). A conductive layer is formed on the gate layer (16) and the resistive layer (12) within the microtip cavity (18) to form a conductive opening layer (20) on the gate layer (16) and a microtip cavity layer (22) on the resistive layer (12).

Abstract: An anode plate 40, suitable for use in a field emission display tetrode, includes a transparent planar substrate 42 having thereon a layer 46 of a transparent, electrically conductive material, which comprises the anode electrode of the display tetrode. Barrier structures 48 comprising an electrically insulating, preferably opaque material, are formed on anode electrode 46 as a series of parallel ridges. Atop each barrier structure 48 are a series of electrically conductive stripes 50, which function as deflection electrodes. Luminescent material 52 overlies anode electrode 46 in the channels between barrier structures 48. Conductive stripes 50 are termed into three series such that every third stripe 50 is electrically interconnected. Deflection voltage controller 70 permits selective deflection of electrons toward the proper luminescent material 52.

Abstract: Micromechanical microwave switches with both ohmic and capacitive coupling of rf lines and integration in multiple throw switches useful in microwave arrays.

Abstract: A multi-level interconnect structure and method. A first plurality of interconnect lines (14) is located on an insulator layer (12) of semiconductor body (10). A first layer of low dielectric constant material (20), such as an organic polymer, fills an area between the first plurality of interconnect lines (14a-c) . The first layer of low dielectric constant material (20) has a height not greater than a height of the first plurality of interconnect lines (14). A first layer of silicon dioxide (18) covers the first layer of low dielectric constant material (20) and the first plurality of interconnect lines (14).

Abstract: An anode plate (10) for use in a field emission flat panel display device (8) includes a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) are covered by a luminescent material (24) and from the anode electrode. A getter material (29) of porous silicon is deposited on the substrate (26) between the conductive regions (28) of the anode plate (10). The getter material (29) of porous silicon is preferably electrically nonconductive, opaque, and highly porous. Included are methods of fabricating the getter material (29) on the anode plate (10).

Abstract: An anode plate 40, suitable for use in a field emission display tetrode, includes a transparent planar substrate 42 having thereon a layer 46 of a transparent, electrically conductive material, which comprises the anode electrode of the display tetrode. Barrier structures 48 comprising an electrically insulating, preferably opaque material, are formed on anode electrode 46 as a series of parallel ridges. Atop each barrier structure 48 are a series of electrically conductive stripes 50, which function as deflection electrodes. Luminescent material 52 overlies anode electrode 46 in the channels between barrier structures 48. Conductive stripes 50 are formed into three series such that every third stripe 50 is electrically interconnected. Deflection voltage controller 70 permits selective deflection of electrons toward the proper luminescent material 52.

Abstract: A switching power supply 38 for use in a switched anode, field emission flat panel display includes energy recovery modules 48.sub.R, 48.sub.G and 48.sub.B for recovering energy from each anode electrode 50.sub.R, 50.sub.G and 50.sub.B of the display as the voltage on the anode V.sub.A is switched from a high level to a low level, and for restoring this energy to the anode as the voltage is returned from the low level back to the high level. Each energy recovery module 48 includes a capacitor 62 for storing charge and an inductor 60 for storing energy. During the deactivation period of each anode electrode 50, dc source 40 is uncoupled from anode electrode 50 and energy is transferred from the anode electrode 50 to inductor 60, and subsequently from inductor 60 to storage capacitor 62. During the re-activation period, energy transfers from storage capacitor 62 to inductor 60 and anode electrode 50, and subsequently from inductor 60 to anode electrode 50.

Abstract: A multi-level interconnect structure and method. A first plurality of interconnect lines (14) is located on an insulator layer (12) of semiconductor body (10). A first layer of low dielectric constant material (20), such as an organic polymer, fills an area between the first plurality of interconnect lines (14a-c). The first layer of low dielectric constant material (20) has a height not greater than a height of the first plurality of interconnect lines (14). A first layer of silicon dioxide (18) covers the first layer of low dielectric constant material (20) and the first plurality of interconnect lines (14).

Abstract: An interconnect for use in a field emission flat panel display device for providing an electrical interconnect between a bond pad 42 on the anode plate 10 and an electrically conductive region 44 on the emitter plate 12 comprises an electrically conductive protuberance 40 attached to region 44 which extends above the surface of region 44 to such a height that when emitter plate 12 and anode plate 10 are assembled at their intended relative positions and spaced from one another at a prescribed distance, structure 40 is forced into compression against the surface of region 42. In one embodiment, gold wire bonds 52 and 56 are attached to bonding pads 64 and 66 on opposing surfaces of anode plate 10 and emitter plate 12, respectively. Bonds 52 and 56 are compressed against one another when plates 10 and 12 are assembled, causing them to be deformed into generally spheroid shapes, the contact between them providing a reliable, low resistivity interconnect between their respective bond pads 64 and 66.

Abstract: A method for forming a gate array substrate contact and the contact resulting therefrom includes the steps of etching off polysilicon gate layers at the same time as cutting the polysilicon to form the gate array base cell (10). The method includes forming openings (40, 42, and 44) in the second insulating layer (34) and insulating layer (30) to connect a lead (46, 48, and 50) to the underlying substrate.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: An electrostatic decontamination method and decontamination device (10) is disclosed for decontaminating the surface of a semiconductor substrate. The decontamination device (10) includes particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Decontamination device (10) also includes substrate biasing device (12) for creating a charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. In addition, the invention analytically characterizes particles using contaminating particle isolator (44) which contains a particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles.

Abstract: A spacer 40 for use in a field emission device comprises a comb-like structure having a plurality of elongated filaments 42 joined to a support member 44. The filaments 42, which may be glass, are positioned longitudinally in a single layer between the facing surfaces of the anode structure 10 and the electron emitting structure 12. Support member 44 is positioned entirely outside the active regions of anode structure 10 and emitting structure 12. Spacer 40 provides voltage isolation between the anode structure 10 and the cathode structure 12, and also provides standoff of the mechanical forces of vacuum within the assembly. In a second embodiment, spacer 50 comprises elongated filaments 52 joined at each end to a support member 54a and 54b, the additional support facilitating handling, fabrication and assembly.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: This is a method of generating noise comprising the step of switching a plurality of resonant tunneling diodes each located in the emitter or base of a multi finger transistor such that each of the resonant tunneling diodes switches at a different input voltage. Other devices and methods are also disclosed.