Abstract: A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (102) formed in the epitaxial layer (14). Doped regions (20,22) are formed in the epitaxial layer (14) that contain dopant of a conductivity type that is opposite to the epitaxial layer (14). The doped regions (20,22) divide the epitaxial layer (14) to provide or define doped regions (21,23). The doped regions (20,22) are formed from a plurality of doped regions (30,31,32,33) that can be formed with high energy implants.

Abstract: A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).

Abstract: An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.

Abstract: A novel antenna arrangement enables the fully automated insertion of an antenna assembly in a communication device (100), such as a cellular radio telephone. A mounting bracket (112) for the antenna assembly is designed to stand in place to enable reflowing of solder to attach the mounting bracket to the circuit board. According to another aspect of the invention, the sleeve (130) and corresponding head (132) of the antenna assembly operatively couple to enable insertion of the sleeve into the mounting bracket, while preventing removal of the sleeve with the head. Preferably, the lower surface of the head is designed to enable the clockwise rotation of the sleeve, while preventing the counterclockwise rotation of the sleeve. Also, the sleeve is designed to receive a removal device to rotate the sleeve in the counterclockwise direction for removal.

Abstract: An antenna arrangement for a portable radiotelephone (100) is disclosed. In particular, the antenna arrangement generally includes a movable antenna element movable between an extended position and a retracted position, a movable contact (243) movably coupled to a bottom portion of the movable antenna element, the movable contact being movable between an extended position and a retracted position, and a circuit board having a first contact element (236), and a second contact element (238) coupled to ground, the first contact element receiving the movable contact when the movable antenna element is in an extended position, and the second contact element receiving the movable contact when the movable antenna element is in a retracted position for terminating the antenna.

Abstract: Throughput and accuracy of testing of a semiconductor device is improved by forming the contacts to allow the leads of a packaged semiconductor device to pass through the contacts. Both AC and DC testing may be done because the contact length is substantially shortened.

Abstract: A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60,97) that can be used to transport electrical signals across the device (10).

Abstract: A wireless communication device (106, 108) incorporates a convenient method for storing/enabling preferred functions which are activated when the communication device is in a standby mode. Recent products and systems adapted to operate with cellular systems have enhanced the functionality of a wireless communication device when a user is not present. For example, the transmission of cellular digital messages, paging messages and facsimiles or computer files by way of cellular networks can be accomplished when a cellular telephone is unattended. The present invention eliminates the need for a user to enable a standby mode before a communication device (404) is left unattended. Further, the present invention provides preferred functions to be enabled (306) when the communication device in the standby mode. If the standby mode is selected (406), the communication device will automatically perform preferred standby functions (414) after the device is unattended.

Abstract: A unique method and apparatus modifies the load impedance at the output of a power amplifier by varying a voltage variable capacitor (VVC) (310) to maximize the efficiency of the power amplifier (304). A comparator (509) generates amplifier control signal (211) based upon a detected power output signal (216) and a reference signal. In addition to providing power control, the control signal is also coupled to a VVC circuit (506) to control the output impedance of the power amplifier. In an alternate embodiment, a separate VVC control signal (527) based upon a comparison of the power control signal and the battery voltage is coupled to a VVC. In another alternate embodiment, a second VVC can be coupled in parallel to the first VVC. The second VVC is preferably controlled by a signal (805) based upon the current in the power amplifier.

Abstract: An electronic component (10) is formed by placing a cap (30) over a light generating device (16). The cap (30) has a top portion (32) that provides a lens (33). The lens (33) is transparent to the optical signal generated by the light generating device (16). The optical characteristics of the electronic component (10) can be adjusted by varying the relative position of the cap (30) over the light generating device (16).

Abstract: A process for forming a sensor (10) such as an accelerometer includes the steps of forming an epitaxial layer (14) on a semiconductor substrate (12), patterning a portion of the epitaxial layer to provide a monocrystalline finger (20,22), wherein the finger has a height (43) at least twice its width (44), and forming a cavity (40) under at least a portion of the finger to expose a bottom surface (38) of the finger using an etchant with an etch selectivity for the semiconductor substrate relative to the epitaxial layer of greater than about 10:1. The distance (42) from the bottom of the cavity to the bottom surface of the member is greater than about 5 microns. The accelerometer is useful for lateral acceleration sensing and is built in bulk silicon at the surface of the substrate.

Abstract: A unique method and apparatus automatically switches between a voice mode and a data mode in a wireless communication device. In particular, a communication device (200) adapted to voice and data signals monitors a data network for data traffic for a first predetermined period of time (506), then monitors a cellular control channel (516) for cellular traffic during a sleep mode of the data network before establishing normal cellular operation. The method and apparatus increases efficient use of channel capacity by selectively switching between systems during periods of nonuse. Finally, according to other novel aspects of the present invention, user prompts (606, 618) enable efficient use of a communication device capable of transmitting and receiving both voice and data.

Abstract: A unique dual beam contact (30) for coupling elements on opposite sides of a dividing element (68) preferably comprises a single piece of metal or other conductive material to provide a contact portion on either side of the dividing element (14). Each beam of the dual beam contact can be specifically shaped or formed to provide the preferred contact pressure depending upon the application the dual beam contact. The dual beam contact includes an attachment member (34, 35) to provide easy attachment to an element of the device. Alternatively, the elbow portion (38) between the two beams could be used to attach the dual beam contact to the dividing element. The dual beam contact of the present invention reduces cost, inventory requirements, and complexity in manufacturing.

Abstract: An apparatus and method for providing a topographical and thermal image of a semiconductor device. A probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: A chemical sensor (10) is formed in part by depositing a stack of dielectric and resistive layers (13-15) on a support substrate (11). A cavity (17) is then formed on a substrate (16) to provide thermal isolation to the chemical sensor (10). The stack of dielectric and resistive layers (13-15) is then bonded to the substrate (16) and the support substrate (11) is removed. A layer of chemical sensing material (30) is then formed on the uppermost dielectric layer (15). Openings (33) may be formed through the stack of dielectric and resistive layers (13-15) to further enhance the thermal isolation of the chemical sensor (10) from the substrate (16).

Abstract: An edge termination structure is created by forming trench structures (14) near a PN junction. The presence of the trench structures (14) extends a depletion region (13) between a doped region (12) and a body of semiconductor material or a semiconductor substrate (11) of the opposite conductivity type away from the doped region (12). This in turn forces junction breakdown to occur in the semiconductor bulk, leading to enhancement of the breakdown voltage of a semiconductor device (10). A surface of the trench structures (14) is covered with a conductive layer (16) which keeps the surface of the trench structures (14) at an equal voltage potential. This creates an equipotential surface across each of the trench structures (14) and forces the depletion region to extend laterally along the surface of semiconductor substrate (11).

Abstract: A semiconductor device (10) is formed in a pedestal structure (16) overlying a semiconductor substrate (11). The semiconductor device (10) includes a source region (44) and a drain region (45) that contact the corners (13) of the pedestal structure (16). Electrical connection to the source region (44) and the drain region (45) is provided by a conductive layer (28) that contacts the sides (12) and corners (13) of the pedestal structure (16).