Abstract: A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.

Abstract: An apparatus is shown for applying a homogeneous uniform layer of a powder to a surface of a part. The apparatus utilizes two belts which are made to track about two pairs of rollers in unison. A hopper containing the powder having an opening in the bottom is disposed so that the opening is closed off by one or both of the belts except for a slit aperture. The aperture is formed by a space between abutting ends of the two belt-roller assemblies. The apparatus is arranged so that as the belts track about the rollers the aperture traverses the opening in the hopper thereby permitting powder to pass through the aperture and fall to the part to be coated which is positioned directly below the opening.

Abstract: A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.

Abstract: A method of making an imager which includes substrate of single crystalline silicon having on one surface of a plurality of spaced detectors arranged in columns and a charge-coupled device between each pair of columns of the detectors. The charge-coupled devices are formed first with the gates of the charge-coupled devices defining detector areas of the substrate surface. A guard-ring is formed in each detector area with the edges of the gates around the detector area defining one edge of the guard-ring so that the guard-rings are aligned with the edges of the surrounding gates. A layer of insulating material is formed over the detector areas with the portion of the insulating layer over the guard-ring being thicker than the remaining portion of the insulating layer. The thinner portion of the insulating layer is removed leaving the thicker portion over the guard-ring region and with an edge of the thicker portion being substantially in alignment with an edge of the guard-ring region.

Abstract: A thickness monitor useful in deposition or etching reactor systems comprising a crystal-controlled oscillator in which the crystal is deposited or etched to change the frequency of the oscillator. The crystal rests within a thermally conductive metallic housing and arranged to be temperature controlled. Electrode contacts are made to the surface primarily by gravity force such that the crystal is substantially free of stress otherwise induced by high temperature.

Abstract: A phase-locked laser array including a plurality of closely spaced channels in the surface of the substrate with lands therebetween with the laser oscillation occurring in a cavity region over each of the channels. A broad-area electrical contact provides uniform electrical current flow to each of the lasing regions. The individual oscillators are coupled by the overlap of their evanescent optical fields. The invention also includes a method of fabricating this array which includes the steps of forming a plurality of corrugations in the surface of a substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the surface and forming planar lands between the concave portions of the corrugations.

Abstract: A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.

Abstract: The performance of a photodetector is reduced by the presence of an electrical defect such as a short or a shunt. The invention is a method of improving the performance of this photodetector by preferentially removing a portion of an exposed surface of a detector electrode at the defect site. The preferential etching of the exposed surface is obtained by immersing the photodetector in a chemical etching ambient which has an etching rate for the exposed surface of the electrode which increases with increasing temperature while applying a reverse-bias voltage to the electrodes. The reverse-bias voltage has sufficient magnitude to cause a local increase in temperature of the exposed surface at the defect site.

Abstract: Cleaning apparatus for cleaning semiconductor wafers and the like in a chamber of cleaning fluid vibrating at ultrasonic (megasonic) frequencies utilizing an electrically energized transducer, such as a piezoelectric crystal, mounted on a conductive foil formed of tantalum or zirconium. Pinholes or other ruptures in the foil can cause high energy arcs capable of exploding vapors of inflammable solvents. The foil carrying the transducers is isolated from the cleaning fluid vapors by a closed buffer chamber containing an inert liquid that couples vibratory energy to the cleaning fluid and another closed chamber enclosing the transducers. Accordingly, cleaning fluids, such as the acetones, alcohols and ketones, heretofore considered hazardous fluids, can be used in the apparatus.

Abstract: Topographical defect detecting apparatus and process for optically inspecting a circular or spiral track surface defining a diffraction grating such as exists on a video disc or optical disc record. Light from a substantially point source illuminates the track surface. Diffracted reflections from the surface are viewed by the human eye with or without the aid of a TV camera and monitor.Non-uniformities in track spacing and deviation from average surface flatness are readily observable.

Abstract: A chuck is shown for holding a stylus during manufacturing of the stylus. The invention includes a method of aligning the chuck and apparatus therefor. The chuck comprises a body and a stylus holder both of which are held separately in mutual alignment in the alignment apparatus. Epoxy is injected into a cavity of the body and the stylus holder inserted into the cavity while maintaining this mutual alignment. The epoxy, being somewhat displaced by the stylus holder, flows about the outer surface of the stylus holder completely filling the space between the two parts. When the epoxy cures, the finished chuck is removed from the alignment apparatus.

Abstract: The resistance between a conductive contact and a region of relatively high conductivity in a body of semiconductor material is lowered by forming the high conductivity region by implanting ions of a desired conductivity type into the semiconductor body through a layer of a material which is electrically innocuous in the semiconductor body and is substantially oxygen free in the layer and at the interface between the layer and the semiconductor body. The layer is applied to the body by first removing any oxide from the surface of the body in an oxygen free ambient and immediately applying the layer to the body while maintaining the oxygen free ambient.

Abstract: An improved method of grounding a pellet mounting pad is disclosed wherein the ground wire is bonded to one of the structural support members of the mounting pad rather than to the surface of the pad itself.

Abstract: A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Abstract: A vertical MOSFET device includes a major surface having an active, gate-controlled portion adjacent to an inactive portion. A gate-controlled perimeter channel is disposed at the boundary between the active and inactive portions.

Abstract: A preform for use in making a video recorded disc in a body of plastic material having substantially flat top and bottom surfaces and a peripheral surface extending between the top and bottom surfaces. The peripheral surface includes a first portion intermediate the top and bottom surfaces and of a peripheral size greater than that of the top and bottom surfaces. Second and third portions extend from the first portion to the top and bottom surface, respectively. Each of the second and third portions has a peripheral dimension which decreases from that of the first portion to that of the top or bottom surface so that the surface of each of the second and third portions is angled away from the top and bottom surfaces, respectively. When the preform is engaged by the molds for making a disc the angled surfaces of the second and third portions serve to minimize if not eliminate the trapping of air and gasses along the surface of the record being formed which cause defects in the record surface.

Abstract: A vertical IGFET device is formed on a substrate which includes a monocrystalline silicon portion at a surface thereof. An apertured insulated gate electrode is disposed on the substrate surface such that an area of monocrystalline silicon is exposed through the aperture. An epitaxial silicon region extends from the substrate surface within the gate electrode aperture and is appropriately doped such that a predetermined voltage applied to the insulated gate electrode forms a channel region in the epitaxial region adjacent thereto. The vertical IGFET is fabricated by a self-aligned technique, wherein the insulated gate electrode includes a first, underlying insulating layer and a second, overlying insulating layer. The second insulating layer protects the gate electrode when the first insulating layer is defined.

Abstract: A method of determining the crystalline or structural quality of phase transformable material such as silicon uses light scattering. The material is exposed to a beam of light of a selected wavelength. Scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the structural quality of the material.The light scattering process is used to determine the phase of deposited material.A layer of silicon material annealed from as-deposited amorphous phase material is easily and quickly distinguished from material as-deposited crystalline phase material and subsequently annealed.

Abstract: An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

Abstract: A system for positioning a body having two opposed edges and having a first axis oriented to pass through the two edges. A beam of light oriented along a second axis orthogonal to the first axis images one or both of the edges onto all or a portion of a photodetector array which is aligned in a direction parallel to the first axis. The array is scanned to obtain a light intensity transition profile of all or part of the projected image whereby the profile has either one or two 50% intensity points. The body is then shifted until both of the 50% intensity points strike predetermined locations on the array indicating that both the edges are included in the image. The body is shifted along the first axis until the fifty percent (50%) intensity point along the transition profile strikes a predetermined location along the photodetector array. The body is also moved along the second axis until the slope of the intensity transition profile is maximized, thereby obtaining an in-focus position.