Patents Represented by Attorney, Agent or Law Firm Donald S. Cohen
  • Patent number: 4575746
    Abstract: A structure for a "universal crossunder" which can reliably interconnect two spaced regions of semiconductor material of the same conductivity type is described. The structure is comprised of two layers, one P type and the other N type which lies in the area between the regions which are to be electrically joined. Accordingly, whether the regions to be electrically connected are P type or N type, electrical connection is made between them through one of the layers of the crossunder.The method of making the "universal crossunder" entails introducing a fast diffusing impurity of one conductivity type and a slow diffusing impurity of the opposite conductivity type into the area between the regions to be joined. Thus, electrical contact between the two spaced regions will be made through one or the other of the layers of the circuit.
    Type: Grant
    Filed: March 18, 1985
    Date of Patent: March 11, 1986
    Assignee: RCA Corporation
    Inventor: Andrew G. F. Dingwall
  • Patent number: 4575636
    Abstract: Apparatus for flood exposing deep ultraviolet (DUV) photoresist material from a xenon lamp source providing pulsed radiation in the DUV range formed into an annular beam by a paraboloid reflector. The radiation beam is substantially collimated with a preferred divergence of 4.degree. for mask (imaging) development. Wafers having single-layer or multi-layer photoresist material sensitive to UV radiation are flood exposed to achieve, with high resolution, imaging, even if the photoresist layers are thin. The apparatus is also used to cure DUV-sensitive photoresist material with the radiation beam having the same or preferably greater divergence. The photoresist material is flood exposed for either imaging or curing that is both rapid and uniform.
    Type: Grant
    Filed: April 30, 1984
    Date of Patent: March 11, 1986
    Assignee: RCA Corporation
    Inventor: Fausto Caprari
  • Patent number: 4574306
    Abstract: An apparatus and method is shown for measuring the shoe length of a video disc stylus and displaying a digital representation of the measured value in standard units of length for viewing by a human observer. The apparatus utilizes a video slicer for providing a selectively positionable sampling line on the screen of a monitor which displays an image of the part to be measured. The sampling line is positioned directly over the part to be measured and a signal is generated having a pulse amplitude corresponding to the brightness of the image only along the sampling line, and having a pulse width corresponding to the length of the image along the sampling line.
    Type: Grant
    Filed: January 27, 1984
    Date of Patent: March 4, 1986
    Assignee: RCA Corporation
    Inventor: John A. van Raalte
  • Patent number: 4571816
    Abstract: A method of manufacturing a semiconductor device is disclosed wherein a matched capacitor having a relatively high capacitance is formed in the structure of a linear MOS device. The method utilizes the standard procedure for manufacturing MOS devices which includes two separate mask steps for forming contact openings to a field effect transistor. During the first mask step, the opening for the upper plate contact of the capacitor is fully etched while the opening for the lower plate contact is only partially etched. During the second mask step, the opening for the lower plate contact of the capacitor is fully etched to the lower plate. In this manner the existing standard procedure may be used without the addition of nonstandard mask and diffusion steps.
    Type: Grant
    Filed: December 11, 1984
    Date of Patent: February 25, 1986
    Assignee: RCA Corporation
    Inventor: Andrew G. F. Dingwall
  • Patent number: 4571617
    Abstract: An apparatus and method is shown for measuring the width of a data pulse of a video signal containing a synchronizing pulse associated with each data pulse. Every N.sup.th data pulse is measured and a digital representation of the measured value is displayed in standard units of length for viewing by a human observer.
    Type: Grant
    Filed: January 27, 1984
    Date of Patent: February 18, 1986
    Assignee: RCA Corporation
    Inventor: Jacob P. Hasili
  • Patent number: 4568437
    Abstract: A method for forming disilane comprises flowing monosilane gas into a reaction vessel while maintaining a glow discharge in the monosilane and flowing the reaction product comprising the disilane out of the reaction vessel at a rate such that the monosilane gas resonance time in the reaction vessel is less than about one second. An apparatus for forming disilane comprises a source of flowing monosilane, a reaction vessel and electrical means for maintaining a glow discharge in the flowing monosilane in the reaction vessel.
    Type: Grant
    Filed: December 28, 1984
    Date of Patent: February 4, 1986
    Assignee: RCA Corporation
    Inventor: Charles R. Dickson, Jr.
  • Patent number: 4569054
    Abstract: A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction.
    Type: Grant
    Filed: June 17, 1983
    Date of Patent: February 4, 1986
    Assignee: RCA Corporation
    Inventors: John C. Connolly, Dan Botez
  • Patent number: 4566224
    Abstract: An improved lapping apparatus is disclosed of the type having a disc shaped lapping surface that rotates while a part to be lapped is held in engagement therewith. The improvement includes control apparatus for controlling the speed of rotation of the lap with respect to the radial position of the part on the lapping surface so that the surface speed of the lap relative to the part is held at a constant level as the part traverses the lapping surface.
    Type: Grant
    Filed: October 24, 1984
    Date of Patent: January 28, 1986
    Assignee: RCA Corporation
    Inventors: Anton G. Moldovan, Randall E. McCoy
  • Patent number: 4567431
    Abstract: The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (I.sub.o) versus reciprocal absorption coefficient (.alpha..sup.-1) in upward-facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.
    Type: Grant
    Filed: October 31, 1983
    Date of Patent: January 28, 1986
    Assignee: RCA Corporation
    Inventor: Alvin M. Goodman
  • Patent number: 4566025
    Abstract: A CMOS device incorporates a plurality of interconnected vertical IGFETs on a substrate. An insulated gate electrode is located on the substrate surface and a pair of monocrystalline silicon regions extend from the substrate surface such that each of the monocrystalline silicon regions is contiguous with a portion of the insulated gate electrode. One of the monocrystalline regions has a body region of first conductivity type and the other monocrystalline region has a body region of second conductivity type. Both of the body regions are located with respect to the insulated gate electrode such that an inversion channel can selectively be created in one of the body regions by applying a predetermined voltage to the insulated gate electrode.
    Type: Grant
    Filed: June 10, 1983
    Date of Patent: January 21, 1986
    Assignee: RCA Corporation
    Inventors: Lubomir L. Jastrzebski, Alfred C. Ipri
  • Patent number: 4561215
    Abstract: The lapping of a facet into a conical diamond tip brazed to a metallic (titanium) shank is controlled by sensing an electrical pulse generated when the diamond facet is enlarged in the vicinity of the titanium shank. A pulse detecting circuit responding to the pulse generates a control signal for energizing a mechanism to lift the stylus from the lapping scaife to cease lapping.
    Type: Grant
    Filed: March 26, 1984
    Date of Patent: December 31, 1985
    Assignee: RCA Corporation
    Inventor: Elvin D. Simshauser
  • Patent number: 4560879
    Abstract: An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.
    Type: Grant
    Filed: September 16, 1983
    Date of Patent: December 24, 1985
    Assignee: RCA Corporation
    Inventors: Chung P. Wu, Frank Kolondra
  • Patent number: 4561007
    Abstract: The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the avalanche region. This photodetector includes an absorptive region having a planar surface area surrounded by a non-planar surface area. A first region overlies the planar area and a second region of opposite conductivity type overlies both the first region and the non-planar area of the absorptive region. The high electric fields are restricted to the first region which is isolated from the surfaces of the photodetector.
    Type: Grant
    Filed: September 14, 1984
    Date of Patent: December 24, 1985
    Assignee: RCA Inc.
    Inventor: Paul P. Webb
  • Patent number: 4561008
    Abstract: A gate controlled semiconductor device comprises a cathode region having a current defocusing region associated therewith. The defocusing region is unmetallized but substantially completely surrounded by cathode metallization. The defocusing region comprises only a relatively small percentage of the total cathode region and conducts current during the on-state of the device. However, during turn-off of the device substantially all of the conducting plasma is forced to flow in the defocusing region.
    Type: Grant
    Filed: January 18, 1978
    Date of Patent: December 24, 1985
    Assignee: RCA Corporation
    Inventor: Hans W. Becke
  • Patent number: 4560853
    Abstract: A method for positioning a diamond stone in an indented shank is described. A wetting agent put in contact with a diamond draws it upwardly into the indentation in the shank. A brazing material is added to the wetting agent to be drawn into the interface between the diamond and the shank indentation. After drying the wetting agent from the assembly, a laser beam heating the shank effects a strong, acid resistant braze of the shank and diamond. A novel brazing material in weight percent of 71% silver, 28% copper, 0.75% nickel, with 0.25 to 0.35% in the aggregate of any one or more of ruthenium, rhodium or iridium provides a strong bond with significant acid resistance.
    Type: Grant
    Filed: January 12, 1984
    Date of Patent: December 24, 1985
    Assignee: RCA Corporation
    Inventor: Douglas H. Ziegel
  • Patent number: 4560274
    Abstract: A method and apparatus for aligning a surface of a pyramidal-shaped workpiece (such as a stylus) with respect to a positioning ring attached to a holder supporting the workpiece. One surface of the workpiece (electrode of the stylus) is exposed to an incident light beam of large diameter so that only a portion of the incident beam is reflected from the surface onto a calibrated screen. A mirror reflects the remaining portion of the light beam back to the other two stylus surfaces to provide a pair of reflected beams onto the same screen. The workpiece is rotated to position the three reflections on the calibrated screen for comparison to a standard.
    Type: Grant
    Filed: April 27, 1983
    Date of Patent: December 24, 1985
    Assignee: RCA Corporation
    Inventor: Ronald K. McNeely
  • Patent number: 4558345
    Abstract: A bond region is provided on an integrated circuit chip wherein the bond region has two or more sets of closely spaced conductors, each of which is electrically connected to a different point of the integrated circuit. During the manufacturing of the device, at the time of assembly of the chip into the package one end of a connector wire may, optionally, be bonded to the bond region thereby effecting a multiple connection of these different points of the integrated circuit. Such a procedure will enable a specific mode of operation of a multi-mode device.
    Type: Grant
    Filed: October 27, 1983
    Date of Patent: December 10, 1985
    Assignee: RCA Corporation
    Inventors: Robert A. Dwyer, James E. Gillberg
  • Patent number: 4557040
    Abstract: An apparatus for accurately aligning an information-containing-disc stylus and assembling the stylus to a stylus holder. The apparatus transfers the stylus from a magazine holding a plurality of such styli into a rotary collet which is then rotated by an operator until a laser beam of light is reflected off a known surface of the stylus and impinges on a fixed target. The apparatus then causes the point of the stylus to pierce the stylus holder to a specific depth whereby the stylus is held firmly by the stylus holder.
    Type: Grant
    Filed: April 19, 1984
    Date of Patent: December 10, 1985
    Assignee: RCA Corporation
    Inventor: David W. Fairbanks
  • Patent number: 4557794
    Abstract: A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8.degree. and 14.degree. from a particular <001> direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.
    Type: Grant
    Filed: May 7, 1984
    Date of Patent: December 10, 1985
    Assignee: RCA Corporation
    Inventors: Joseph T. McGinn, Lubomir L. Jastrzebski, John F. Corboy, Jr.
  • Patent number: 4554570
    Abstract: An integrated device which incorporates a plurality of interconnected vertical IGFETs on a single substrate is described. A monocrystalline silicon region extends from an area of the substrate surface and a plurality of insulated gate electrodes are disposed so as to be contiguous with the monocrystalline silicon region. Each of the insulated gate electrodes can be selectively biased with a predetermined voltage so as to create an inversion channel in a segment of the monocrystalline silicon region contiguous therewith.
    Type: Grant
    Filed: June 2, 1983
    Date of Patent: November 19, 1985
    Assignee: RCA Corporation
    Inventors: Lubomir L. Jastrzebski, Alfred C. Ipri