Abstract: The protection circuit is a four layer PNPN device which includes a PMOS IGFET. The device is designed to pass current to ground when large transients are imposed across its two external terminals, thereby protecting the integrated circuit.

Abstract: There is disclosed herein an ion implantation apparatus providing for electron flooding during ion implantation to not only neutralize the positive space-charge on an ion beam but also provide a slightly negative space-charge on the beam whereby accumulated positive charges on an insulated device is obviated and only harmless negative charges remain.

Abstract: A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces to be coated, held in a plane that is both parallel to the electric field of the glow discharge reaction and perpendicular to the direction of motion of the substrates through the apparatus.

Abstract: A phase-locked semiconductor array wherein the lasing regions of the array are spaced an effective distance apart such that the modes of oscillation of the different lasing regions are phase-locked to one another. The center-to-center spacing between the lasing regions is non-uniform. This variation in spacing perturbs the preferred 180.degree. phase difference between adjacent lasing regions thereby providing an increased yield of arrays exhibiting a single-lobed, far-field radiation pattern.

Abstract: Monocrystalline silicon is deposited on first and second portions of a substrate, the first and second portions having substantially unequal dimensions. The method comprises subjecting the substrate to a silicon-source gas and a predetermined concentration of chloride at a predetermined temperature. The chloride concentration is selected so as to create a substantially equally thick monocrystalline silicon deposit on each of the substrate portions.

Abstract: A diode structure is disclosed wherein the diode includes a body of a first type conductivity material; a first region of a second conductivity material in the body and having an opening therein through which a portion of the body projects; and a second region of the first conductivity material in the portion of the body that projects through the opening. The second region is rotationally positioned with respect to the first region so that it partially overlaps the first region at points of intersection of the two regions. These points of intersection are the rectifying junctions. The respective shapes of the opening and of the second region are arranged so that the sum of the areas of the breakdown junctions is a constant value notwithstanding that the second region may be displaced or misaligned with respect to the first region, provided that relative displacement or misalignment of the two regions is within defined limits.

Abstract: A lenticular array which is a body having a flat surface and an opposed surface with a plurality of convex lenses thereon is aligned with a substrate having a pattern therein by placing the lenticular array over the substrate with the flat surface facing the substrate. Radiant energy is directed through the substrate and the lenticular array to project the patterns onto the lens surface of the lenticular array. The lenticular array is moved with respect to the substrate until the images of the patterns are aligned on the surfaces of the lenses.

Abstract: An imager includes an imaging device and an lenticular array mounted on the imaging device. The imaging device includes a substrate of a semiconductor material having a pair of opposed major surfaces and an array of detectors at one of the major surfaces. The lenticular array includes a substrate having a pair of major surfaces and an array of lenses at one of the major surfaces. The lenticular array is mounted on the detector device with the other major surface of the lenticular array substrate being in closely spaced relation to the other major surface of the detector device substrate. Between the two opposed major surfaces of the two substrates is a bonding cement which extends only around the detector array. Dispersed within the bonding cement are hard spacer particles which are engaged by the opposed major surfaces of the two substrates to space the substrates apart.

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

Abstract: Apparatus, comprising a series of staggered metal contacts, is used to join adjacent ends of adjacent sets of substantially parallel semiconductor lines. The lines of one set can have a conductivity type opposite that of the lines of the adjacent set. Also, one of the sets may comprise epitaxial silicon, grown on an insulating substrate such as sapphire, while the other set comprises polycrystalline silicon.

Abstract: A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.

Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region, a second region overlying the first region and having a central zone which is thinner than a peripheral zone and a third region overlying the second region. The high electric field required for avalanche multiplication is then restricted to the portion of the first region adjacent the central zone while the field at the periphery is less than that necessary for avalanche multiplication.

Abstract: A reusable centrifuge fixture is disclosed for holding small parts, such as integrated circuit chips, during high speed rotation. The fixture is made of a moldable material having a depression formed therein conforming to the contours of the part. The fixture is made by pouring the moldable material into an open cavity of a form and the part to be centrifuged, or a replica thereof, is impressed into the surface of the moldable material prior to curing. A permanent magnet is used in conjunction with the fixture to hold the part within the centrifuge machine during set-up of the machine.

Abstract: A CCD imager includes a thin semiconductor substrate having a glass support mounted in a recess in a housing with a portion of the glass support being exposed through a window opening in the bottom of the housing recess. A portion of the glass support is removed by securing a glass backing plate to the other surface of the silicon substrate, filling the housing recess with an epoxy material and applying a layer of an epoxy over the filling material and the backing plate. An etch resistance masking tape is placed across the center portion of the exposed surface of the glass support leaving the portions of the glass support at the corners of the housing opening exposed. The exposed portions of the glass support at the corners of the housing opening are pre-etched with a suitable etchant.

Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a central zone which is thicker than a surrounding peripheral zone and a second region overlying the first region. The avalanche region is then restricted to the thicker central zone of the first region.

Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a higher concentration zone and a surrounding peripheral zone and a second region overlying the first region. The high electric field in the avalanche region is then restricted to the higher conductivity central zone thereby reducing the electric field at the detector surfaces when a reverse-bias voltage sufficient to produce avalanche multiplication is applied to the detector.

Abstract: A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

Abstract: An optical profilometer for surface contours subject to tilt is optically scanned to measure the surface contours. Surface tilt effects are obviated by slitted apertures in the paths of the reflection beams to pass the beams with large surface tilts (on the order of 30.degree.) without loss of sensitivity, accuracy, or precision.

Abstract: The present invention relates to a method of forming a frame transfer CCD imager having in a substrate of single crystalline silicon of one conductivity type a plurality of parallel channels of the opposite conductivity type extending along a surface of the substrate, channel stop regions between the channels, blooming drains within the channel stop regions and potential barrier region beneath each blooming drain. The method includes forming on the surface of the substrate a first masking layer of silicon oxide and a second masking layer of a photoresist over the first masking layer. Aligned openings are formed in the first and second masking layers with the openings in the first masking layer having sides which taper back under the second masking layer. Ions of a desired conductivity modifier are implanted into the substrate through the aligned openings to form the blooming drains.

Abstract: A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.