Abstract: A portable electronic device including a display carrier detachably mounted to the portable electronic device. The display carrier including a virtual image display apparatus. A data communication interface is provided between the display carrier and the portable electronic device for permitting data exchange between the display apparatus and the portable electronic device. The display apparatus including a binocular optical system for providing an image output at a right eye output and a left eye output.

Abstract: An extended VCSEL structure formed of a first DBR mirror, an active region, a second DBR mirror as partial reflector, and an extended cavity provided by a transparent conductive substrate wafer fused onto the second DBR mirror. The transparent conductive substrate also serves as a convex mirror with a highly reflective dielectric coating to complete the extended cavity VCSEL structure. The use of the extended cavity makes high power single mode operation achievable because an extended cavity introduces high modal loss to the high order laser modes while supporting the lowest order single mode. The large active area allows high output power from the VCSEL.

Abstract: Quantum random address memory apparatus including a low dimensional plurality of address ports, a plurality of nano-memory elements, mixer elements coupling the address ports to a high dimensional plurality of the plurality of nano-memory elements, and data output ports and structure coupled to the plurality of nano-memory elements. The high dimensional plurality of nano-memory elements is greater than the low dimensional plurality of address ports by a number resulting in substantially error free memory recalls.

Abstract: A process of patterning magnetic multilayer films including the steps of successively depositing a plurality of magnetic multilayer films on a supporting substrate, selectively removing portions of the plurality of magnetic multilayer films using a reactive plasma etch including chlorine gas, and passivating in situ, or an adjacent evacuated chamber, remaining portions of the plurality of magnetic multilayer films, i.e. the memory elements, in a post-etch fluorinated plasma.

Abstract: A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.

Abstract: An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.

Abstract: A vertical cavity surface emitting laser array with an integrated PIN photodiode. The PIN photodiode includes a first region of a first doped material, a second region of an undoped material and a third region composed of an n-doped stack of distributed Bragg reflectors. The vertical cavity surface emitting laser includes the n-type stack of distributed Bragg reflectors, an active, and a p-type stack of distributed Bragg reflectors so as to define an optical pathway through which light is generated and passes. The integrated device allows for automatic power control of each of the individual devices forming the array by sequentially scanning the individual devices and generating feedback signals.

Abstract: A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an isolation layer formed on the second stack of distributed Bragg reflectors. The isolation layer is formed of a dielectric material or insulating semiconductor material having an index of refraction greater than the first and second stacks of distributed Bragg reflectors and thereby defining an anti-guiding VCSEL structure. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.

Abstract: A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an enhanced conductivity region formed within a central portion of the second stack of distributed Bragg reflectors and within the laser emission path. The enhanced conductivity region is defined by either zinc diffusion or beryllium implants. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.

Abstract: Quantum random address memory apparatus including a low dimensional plurality of address ports, a plurality of magnetic nano-memory elements, mixer elements coupling the address ports to a high dimensional plurality of the plurality of magnetic nano-memory elements, and data output ports and structure coupled to the plurality of magnetic nano-memory elements. The high dimensional plurality of magnetic nano-memory elements is greater than the low dimensional plurality of address ports by a number resulting in substantially error free memory recalls.

Abstract: An organic electroluminescent display device (10) includes a plurality of organic layers (16, 18, 20, 22 and 24) disposed between opposing electrodes (14 and 26). The hole transporting layer (22) comprises a hole transporting material characterized by the general formula: ##STR1## where n, m, and p each independently take the value of 0, 1 or 2; A1 and A2 each represents:(a) an alkyl group; or(b) an alkyl substituted with aryl, hydroxy, cyano, alkoxy, halo, or amino group(s); or(c) an aryl group; or(d) an aryl group substituted with alkyl, aryl, hydroxy, cyano, alkoxy, phenyl, halo, or amino group(s).

Abstract: A VCSEL for emitting visible wavelength light including a GaInP substrate element, a first mirror stack with mirror pairs in a GaInP/AlInP material system lattice matched to a GaInP active region. The active region including a quantum well layer, a first barrier layer and a second barrier layer. The active region sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region adjacent a second mirror stack. The second mirror stack lattice matched to the active region and having mirror pairs in a GaInP/AlInP material system. The VCSEL device capable of emitting light in the range of 635-650 nanometers.

Abstract: A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired:.DELTA.Y=M.sub.y Y+.delta.Y.DELTA.X=M.sub.x X+.delta.Xwhere:M.sub.y and M.sub.x are the X and Y magnification errors;.delta.Y includes the terms .alpha.X.sup.4 +.beta.X.sup.2 +.gamma. where,.alpha. includes the terms a.sub.1 Y.sup.3 +a.sub.2 Y.beta. includes the terms a.sub.3 Y.sup.3 +a.sub.4 Y.gamma. includes the terms a.sub.5 Y.sup.3 +a.sub.6 Y;and with corresponding equations for .delta.X. The pattern is then formed in the absorbing layer to form an X-ray mask.

Abstract: A method of selective metallization/deposition including patterning a mask on the surface of a substrate structure to define contact areas, and utilizing a compound, including a metal, which dissociates under predetermined conditions. The dissociation and application of the predetermined conditions occurring either during deposition or after deposition to selectively form a layer of the metal on the contact areas.

Abstract: Methods and apparatus for recovering a desired signal from a composite signal. In one method, sample-based information maximization techniques for blind deconvolution are utilized to learn a filter (22) which removes undesired dependencies from the composite signal. Entropy as an expectation over individual samples of the composite signal is maximized. In another method, dependencies of the composite signal are selectively removed by learning a first filter (42) that removes the desired dependencies and outputs a filtered signal. The filtered signal is used as the learning material for a second filter (44) such that the second filter learns to remove only the remaining dependencies (undesired dependencies) from the filtered signal. The composite signal is applied to the second filter (44) which thereby removes the undesired dependencies.

Abstract: An active matrix OED array with an improved device cathode includes a plurality of control transistors formed on a semiconductor substrate with insulating material positioned over the control transistors to form a planar surface. A plurality of contact pads are formed on the planar surface and electrically coupled to the control transistors. A thin (5 .ANG. to 20 .ANG.) electron injecting layer of either alkaline metal oxide or alkaline metal fluoride is positioned on each contact pad and organic material is deposited on the electron injecting layer so as to define an organic light emitting device on each contact pad and electrical and light conducting material is positioned over the organic material to define a second terminal for the OEDs.

Abstract: A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding region and a second cladding region positioned on opposite sides of an active area overlying the first stack of distributed Bragg reflectors A second stack of distributed Bragg reflectors is positioned on the active region. The second stack has an ion implantation region formed to control and define a lasing threshold of the laser.

Abstract: A quantum random address memory with piezo readout includes a plurality of address ports providing a low dimensional plurality of addresses, readout structure including a piezo layer with a pair of readout terminals attached thereto, a plurality of nano-memory elements, a plurality of mixer elements coupling either the plurality of address ports or the piezo layer to a high dimensional plurality of the plurality of nano-memory elements, and the other of the plurality of address ports or the piezo layer being coupled to the plurality of nano-memory elements, wherein the high dimensional plurality of nano-memory elements is greater than the low dimensional plurality of addresses.

Abstract: A method of photoelectro-manipulation of target molecules including providing a photoconductive layer of material having a first and a second electrically conductive contact on a first surface thereof and a probe on an opposed second surface. A solution containing target molecules is positioned in electrical contact with the probe. A positive potential is connected between the solution and the first electrically conductive contact and a negative potential is connected between the solution and the second electrically conductive contact. A beam of light is directed through a portion of the photoconductive layer of material to complete an electrical circuit between one of the first and the second electrically conductive contacts and the solution, whereby target molecules in the solution are attracted to or repelled from the probe which is coupled into the electrical circuit by the beam of light.

Abstract: An organic electroluminescent display device (10) includes a plurality of organic layers (16, 18, 20, 22 and 24) disposed between opposing electrodes (14 and 26). The hole transporting layer (22) is composed of a hole transporting material stabilized by a polymeric network.