Abstract: An OED with a first microcavity including a first transparent spacer positioned adjacent the diode light output and a first mirror stack positioned on the first spacer to reflect light back into the OED and to define an optical length of the first microcavity. The optical length of the first microcavity being such that light emitted from the first microcavity has a first spectrum. A second microcavity including a second transparent spacer positioned adjacent the first microcavity and a second mirror stack positioned on the second spacer to reflect light toward the first microcavity and to define an optical length of the second microcavity. The optical length of the second microcavity being such that light emitted from the second microcavity has a second spectrum. Additional microcavities can be placed in the structure to further enhance and alter the light spectrum.

Abstract: A high speed and high density magnetoresistive random access memory (MRAM) device (30) is provided. The MRAM device employs a poly-silicon word line (39a) that saves wiring space. Further, the word line is connected to a digit line (38a) by a connecting line (44a) which reduces a electrical resistance between transistors (43a) and (40a). Arrangement of the connecting line reduces a transmission time from a digit current control (33a) to transistor (43a) and greatly improves a memory cycle time.

Abstract: A molecular detection apparatus including an electrode, a peptide nucleic acid probe covalently bonded to the electrode and a protective layer covering portions of the electrode not having attached probes which prevents oxidation/reduction of intercalator molecules.

Abstract: A method of measuring electrical characteristics of a molecule including providing a first metal contact having a major surface, an insulating layer overlying the major surface of the first metal contact and a second metal contact overlying the insulating layer so as to have an edge spaced a molecular distance from the major surface of the first metal contact. A conductive organic molecule including a metal binding group is coupled between the metal contacts.

Abstract: A light source for use in an infra-red data association data link device including a vertical cavity surface emitting laser for emitting a beam of light along a path, and a diverger positioned in the path for diverging the emitted beam of light.

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.

Abstract: A method of fabricating 3D semiconductor circuits including providing a conductive layer with doped polysilicon thereon patterned and annealed to form first single grain polysilicon terminals of semiconductor devices. Insulated gate contacts are spaced vertically from the terminals so as to define vertical vias and polysilicon is deposited in the vias to form conduction channels. An upper portion of the polysilicon in the vias is doped to form second terminals for the semiconductor devices, and the polysilicon is annealed to convert it to single grain polysilicon. A second electrically conductive layer is deposited and patterned on the second terminal to define second terminal contacts of the semiconductor devices.

Abstract: A VCO includes a transistor having a plurality of negative differential resistance devices coupled in series to the source terminal of the transistor, with each of the devices having a negative differential resistance operating region. Biasing circuits are coupled to the drain and gate terminals along with operating voltages which set the oscillator to operating in a negative differential resistance region of at least one of the negative differential resistance devices so that oscillations of a selected frequency are produced at an output terminal. The transistor, the plurality of N devices, the DC biasing circuits, and the operating voltages are connected so that the oscillator negative differential resistance operating region is greater than N times as wide as each of the device negative differential operating regions individually.

Abstract: A VCSEL for emitting long wavelength light including a GaAs (111) substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure including a nitride based quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.

Abstract: A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.

Abstract: An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).

Abstract: A semiconductor laser package including a laser chip mounted to a leadframe, and a plastic resin housing for encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The leadframe being positioned a fixed distance from an emission window formed in the plastic resin housing. The laser chip mounted in precise z-axis alignment from the emission window utilizing the leadframe as a dimensional reference point, with the bump height compensating for variations in laser chip dimension. An optical element is optionally positioned in the path to reflect a portion of the emission.

Abstract: A micro-contact printing stamp (100) includes a flexible layer (104) made from an elastomer and having a stamping surface (105). Flexible layer (104) is attached to a support structure (102).

Abstract: A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.

Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a LED array display chip, fabricated of an array of LEDs, formed on a substrate, having connection pads positioned about the perimeter of the LED array display chip, a separate silicon driver chip having connection pads routed to an uppermost surface, positioned to cooperatively engage those of the display chip when properly registered and interconnected using wafer level processing technology. The display chip being flip chip mounted to the driver chip and having a layer of interchip bonding dielectric positioned between the space defined by the display chip and the driver chip. The LED display and driver chip package subsequently having selectively removed the substrate onto which the LED array was initially formed, thereby exposing the connection pads of the display chip and a remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer.

Abstract: An optical module that includes a multiple number of VCSELs, or VCSELs and conventional edge emitting lasers, is proposed to be incorporated into a DVD pickup to read either CD or DVD through a single optical system.

Abstract: A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.

Abstract: A bio-molecule analyzer including a plurality of test sites on a transparent substrate, each test site having probe molecules attached thereto. An array of addressable light sources are positioned in optical alignment with a corresponding test site. A solution containing sample molecules is positioned in contact with the plurality of test sites. A detector array having a plurality of photodetectors positioned in optical alignment with the array of addressable light sources, one photodetector corresponding to each light source, and a light filter positioned between the detector array and the plurality of test sites for absorbing the light from the light sources and transmitting the light from the test sites to the detector array.

Abstract: An active matrix OED array includes an array area defined on a semiconductor substrate defining rows and columns of pixels and driver areas spaced from the array area with driver circuits including row drivers coupled to row buses and column drivers coupled to column buses formed in the driver areas. An active control circuit and an OED are formed in each pixel of the array area and coupled to a row and a column bus adjacent each pixel. A second substrate is formed of light transmissive material and includes externally accessible electrical connectors coupled to the driver circuits. The semiconductor substrate includes a first bump pad encircling the array area and the second substrate includes a mating second bump pad with the first and second bump pads engaged to seal the array area.

Abstract: Image scanner and display apparatus including an array of organic electroluminescent devices, each device operating as a light emitter when forward biased and as a light detector when reverse biased. Electronics coupled to the array and having a display mode and a scanner mode, the electronics sequentially forward biasing the array of organic electroluminescent devices, one row at a time, to emit light in the display mode, and sequentially forward biasing alternate columns of devices to emit light, one column at a time, and reverse biasing an associated column of devices for detecting light in the scanning mode, whereby light emitted from a forward biased column and reflected by information being scanned is received by the reverse biased associated column.