Abstract: An organic electroluminescent display device (10) includes a first display region (12) and a second display region (14), each region adapted to provide a different type of information. For example, first display region (12) may be adapted to display icon information, while second display region (14) may be adapted to provide dynamic or changing information such as video or alpha numeric information. The display device (10) may include an organic electroluminescent display module (62) having a plurality of picture elements, said picture elements optionally having corresponding light influencing elements (58 and 102-110) for providing full color icon or dynamic information.

Abstract: A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region. The active region including an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an AlGaAs/GaAs material system. The active structure including a nitride based quantum well and a GaAsP barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

Abstract: A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

Abstract: Portable communication equipment having a virtual image display including display electronics and optics for providing a virtual image in the display, cursor electronics connected to the display electronics for producing a manually controllable cursor virtual image in the display, and manual controls mounted on the portable communication equipment and externally accessible by an operator. The manual controls are connected to the cursor electronics for controlling the position and function of the cursor virtual image to provide functions such as pull-down menus and image selection.

Abstract: A VCSEL with a vertically integrated photodetector and at least one laterally integrated photodetector, including first and second stacks of DBRs and an undoped region or active region sandwiched therebetween is formed. The vertically and laterally integrated PIN photodetectors are integrated into the device by depositing the region of undoped material in alignment with the first stack of DBRs. The device is fabricated to electrically isolate the vertical cavity surface emitting laser and the vertically integrated photodetector from the at least one laterally integrated photodetector.

Abstract: Portable communication equipment having a virtual display including display electronics and optics for providing a virtual image in the display, a virtual control panel image viewable in the virtual display as a portion of the virtual image and cursor electronics connected to the display electronics for producing a manually controllable cursor virtual image in the display. The virtual image control panel is connected to be operable with the cursor virtual image and further connected to operate the portable communication equipment. Manual controls, connected to the cursor electronics for controlling the position and function of the cursor virtual image, are mounted on the portable communication equipment and externally accessible by an operator.

Abstract: A full color organic light emitting backlight device for liquid crystal display applications defined by a first OLED panel, designed to emit light in a red bandwidth, a second OLED panel, positioned adjacent the first OLED panel and designed to emit light in a green bandwidth, and a third OLED panel, positioned adjacent the second OLED panel and designed to emit light in a blue bandwidth. The light emitting device having positioned on an uppermost surface a liquid crystal display. The device intended for incorporation into portable electronic devices. The device is fabricated to achieve a full color image using field sequential color techniques.

Abstract: VCSEL with integrated lens element and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes at least one quantum well layer and a plurality of barrier layers. A lens element is integrated with the VCSEL structure being etched directly into an uppermost surface of the second stack of distributed Bragg reflectors or etched into a layer of silicon nitride (SiN) disposed on an uppermost surface of the second stack of distributed Bragg reflectors.

Abstract: A low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, a second exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, and electrically insulating material sandwiched between the first and second exchange coupled structures to form a magnetoresistive tunneling junction. Each of the first and second exchange coupled structures, and hence the memory cell, has no net magnetic moment.

Abstract: An annular waveguide VCSEL for achieving a stable high power single high order mode output including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

Abstract: A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.

Abstract: One surface of a semiconductor component attached to one surface of a header with an opposite surface of the component having an optical input/output positioned adjacent one end of an optical fiber. The component and optical fiber are fixedly attached with no strain by a curable gel with the header acting as a heat sink. Electrical contacts are made to the component by means of leads formed on the header and/or a conductive coating deposited on the optical fiber.

Abstract: VCSEL with integrated shaped cavity mirror and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes at least one quantum well layer and a plurality of barrier layers. A shaped cavity mirror is integrated with the VCSEL structure being etched directly into an uppermost surface of the second stack of distributed Bragg reflectors to form an unstable resonant laser cavity for use in single mode laser applications, or as a random phase mask for use in multimode laser applications.

Abstract: A method of fabricating an integrated VFET and Schottky diode including forming a source region on the upper surface of a substrate so as to define a channel. First and second spaced apart gates are formed on opposing sides of the source region so as to abut the channel, thereby forming a channel structure. Schottky metal is positioned on the upper surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode. A source contact is formed in communication with the source region and the Schottky metal, and a drain contact is formed on the lower surface of the substrate.

Abstract: A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produced in the layers at the mesa sidewall and the first layer overlying the mesa is in contact with the last layer overlying the substrate adjacent the mesa. A spacer of nonconductive material is formed on the discontinuity and the plurality of overlying layers are etched, using the spacer as a mask, so as to form a contact area overlying the mesa and a contact area overlying the substrate adjacent the mesa, and a semiconductor device positioned adjacent the sidewall beneath the spacer and between the contact areas.

Abstract: A VCSEL for emitting long wavelength light and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors, a first oxide layer, a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first oxide layer and a second cladding region, the active structure including a nitride based quantum well, a second oxide layer adjacent the active region, and a second stack of distributed Bragg reflectors adjacent the second oxide layer.

Abstract: A low switching field magnetic tunneling junction memory cell including an antiferromagnetically coupled structure having first and second magnetoresistive layers of different thicknesses and a non-magnetic conducting layer sandwiched therebetween so that the magnetic vectors of the pair of layers are anti-parallel with no applied magnetic field, a magnetoresistive structure having a magnetic vector, and electrically insulating material sandwiched between the antiferromagnetically coupled structure and the magnetoresistive structure to form a magnetic tunneling junction.

Abstract: A semiconductor laser package including a plastic resin housing for encapsulating a vertical cavity surface emitting laser. The semiconductor laser package including a mounting base, a surround can and a cap. The cap having integrally formed therein a power monitoring system, such as a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned to receive a portion of the emission. The power monitoring system including a plurality of layers of an amorphous silicon material and/or a germanium material.

Abstract: A teleconference system including a display terminal composed of an image source, a plurality of optical elements, a display screen and a planar optical structure associated with an outermost surface of the display screen; a video camera positioned to receive a reflected image from the display screen and a transmission link to a distant teleconference system. The planar optical structure is formed integral the display screen, such as through molding, or the like, or alternatively affixed to the outermost surface of the display screen in the form of a coating, or a plastic of glass element. The planar optical structure includes a blazed grating, thereby providing for the transmission therethrough of a portion of light and the reflectance of a portion of light incident thereon.

Abstract: A micro-contact printing apparatus includes a pressure chamber with a micro-contact printing stamp, a vacuum chuck, elastomeric membrane and mechanical stops attached to the vacuum chuck and positioned within the chamber. An extractor pin is attached to the chamber and accessible externally. The micro-contact printing stamp includes a flexible layer made from an elastomer with a stamping surface and attached to a support structure. A method for micro-contact printing a substrate surface includes advancing the substrate surface toward the stamping surface and contacting mechanical stops with support structure before the substrate surface physically contacts the stamping surface. Springs of members adjust the position of the substrate surface to be parallel with the stamping surface. The membrane is inflated to physically contact the substrate surface with the stamping surface, in such a manner that complete adhesion of the stamping surface to the substrate surface is achieved.