Abstract: Method for the fabrication of sensor arrays with individually different sensing surface, where lift off technique and shadow mask technique is used simultaneously. A resist layer with openings at all locations where coatings are intended is applied with lift off technique. Then a shadow mask is used provided with widows only at the openings where deposit is intended for one specific coating. By for instance vapor deposition, coatings are effected where there are openings in the resist and windows in the shadow mask. The shadow mask is moved to the next depositions location and the procedure repeated until all coatings have been effected. The shadow mask is removed as is also the resist giving an improved sensor quality compared to prior-art methods.

Abstract: Disclosed herein is a method for forming an embedded metal wiring comprising the steps of: forming a wiring trench, a barrier metal film and a conductive metal film; exposing the barrier metal film by polishing the conductive metal film by use of a polishing liquid and an oxidizing agent having a first concentration; and forming a wiring by polishing and removing the exposed barrier metal film by use of a polishing liquid and an oxidizing agent having a second concentration lower than the first concentration. The excessive polishing of the conductive metal occurs when an oxidizing agent having a relatively large concentration while such an oxidizing agent is needed when the barrier metal film is polished and removed. In order to attain the smooth removal of the barrier metal film and to prevent the excessive removal of the conductive metal, the oxidizing agent having a lower concentration is employed in the polishing of the conductive metal.

Abstract: A semiconductor integrated circuit device is implemented by circuit components and a multi-layered wiring structure, and titanium nitride is used for a part of the integrated circuit such as a conductive plug, an accumulating electrode and a conductive line, wherein the titanium nitride layer is laminated on a titanium silicide layer so as to absorb thermal stress due to the titanium nitride layer.

Abstract: A hand-held hair dryer which includes a negative ion generator and a corona discharge operating between a pin in the ion chamber and the grid at the outlet of the barrel for injecting a continuous supply of ions into the heated air stream. The hair dryer has an infrared on/off sensor switch which automatically activates the device when picked up by the user and a separate cooling switch to lower the heat level while maintaining the same air volume. The hair dryer includes a self-contained cord retractor which employs a fail-safe microswitch preventing operation unless electric cord is fully unreeled. Separate push button controls and readouts covered by a single membrane are attached on the body of the unit to control speed and ionizer function.

Abstract: According a method of manufacturing a semiconductor device, a polysilicon layer is formed on a semiconductor substrate and is patterned, thereby forming a storage electrode and plate electrode in a memory cell region and leaving the polysilicon layer in an aligning mark formation region. An interlevel insulating film is formed on the semiconductor substrate including the storage electrode, plate electrode, and polysilicon layer. An upper interconnection layer is formed on the polysilicon layer and is patterned, thereby forming an upper interconnection layer in the memory cell region and an aligning mark in the aligning mark formation region. An interlevel insulating film is formed on the upper interconnection layer and aligning mark and is etched back, thereby planarizing the memory cell region and aligning mark formation region and removing the interlevel insulating film on the aligning mark.

Abstract: To provide a semiconductor device in which a direction of a conformation difference in respective wiring layers of semiconductor integrated circuits can be detected and at the same time a conformation difference detection sensitivity is increased. A semiconductor device is provided with semiconductor integrated circuits 10, which are practical circuits, and conformation difference detection circuits 11 in one and same semiconductor substrate.

Abstract: A method for forming interconnects of a semiconductor device in which an amount of the fluorocarbon-based gas in an etching gas is adjusted to form a side-wall film which has a film thickness not less than a critical film thickness. In the present invention, the damage of a gate electrode and a gate dielectric film, due to charging imbalance caused by an electron shading effect during the etching of an interconnect layer, can be prevented.

Abstract: A nasal and pharyngeal spray solution for use in spraying into the nose and mouth to protect the mucosa from noxious viruses, bacteria and fungi and excessive drying, in situations of high risk, such as the cabins of commercial aircraft, is comprised of a saline solution of Proanthocyanidins and ascorbic acid. The ‘fresh mix’ delivery system is an appropriately closed, sterile, oxygen-excluding, pressurized container.

Abstract: In a PDP power circuit, a rectifier circuit is connected to an external commercial power source, and a high voltage power circuit is connected to the rectifier circuit and outputs a first voltage. A first capacitor is connected between an output terminal of the high voltage power circuit and the ground potential. A low voltage power circuit is also connected to the rectifier circuit and outputs a second voltage lower than the first voltage. The input terminal of a DC/DC converter is connected to the high voltage side of the first capacitor, while the output terminal of the DC/DC converter is connected to the output terminal of the low voltage power circuit. A voltage detector circuit is also connected to the output terminal of the high voltage power circuit. The first voltage is supplied to a PDP drive circuit, while the second voltage is supplied to a PDP control circuit.

Abstract: A pick-up apparatus for picking up semiconductor chips comprising an integrated or a separately rotatable composite cam formed by a plurality of cylindrical cams, and a plurality of cylindrical pin holders having a plurality of push-up pins, and at least part of the pin holder is in contact with the composite cam. The rotation of the composite cam selects one of the pin holders suited for pushing up a desired semiconductor chip, and the counter rotation selects another pin holder suited for another semiconductor chip having a different size. In this manner, a plurality of semiconductor chips having different sizes can be properly picked up without replacing the pin holder.

Abstract: An image processing system and method for generating a palette for paletted images. The invention assigns an area of the color space with a higher importance using weights and color space distance so that more entries in the palette will represent these more important colors. Therefore, the color representation of the paletted image will more closely resemble the original absolute color image in the area of interest.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying.

Abstract: A minute shielded loop probe is built in the vicinity of the terminal of the IC socket. The IC is fixed to the IC socket and driven by the external power source and the external signal, and thereby a magnetic field generates in the vicinity of the terminal of the IC by the high frequency current flowing through this terminal. It is possible to obtain the high frequency current flowing through the terminal on the magnetic field. With this procedure, it is possible obtain the high frequency current accurately and easily, and then to take effective measures against EMI.

Abstract: An automatic communication mode determining circuit determines, when a flash programming mode signal becomes active, a communication mode indicated by a communication mode selection signal, and an associated communication mode signal is fed to a communication mode signal bus. In a terminal circuit corresponding to the communication mode, a selector selects the associated communication mode, and an input buffer control signal activates an input buffer. For a terminal for which it is not known that the terminal is used in accordance with a communication mode, the output (communication mode signal) from the communication mode signal bus is selected in the flash programming mode to be outputted as the input buffer control signal. This causes the input buffer associated with the terminal not used in the flash programming mode to turned off to prevent a current from flowing through the input buffer.

Abstract: In a read circuit, a sense amplifier amplifies a current flowing in a cell and determining whether the cell is an ON cell or an OFF cell. A latch circuit group consists of latch circuits latching output data from the sense amplifier. An encoder circuit converts the latched data into binary data. An output circuit outputs the encoded data. A stop and correction circuit stops an operation of a first-stage or third-stage sense amplifier circuit based on an output result of a second-stage latch circuit and applies a signal expected to be outputted from the sense amplifier which is being stopped, as a latch input signal L0.

Abstract: A cleanroom has an inner chamber inside of which are disposed prescribed semiconductor device production equipment, an interface box, and an interface box opener and the like, and an outer chamber which surrounds the inner chamber, and which forms an air circulation path between itself and the inner chamber, wherein air inside the inner chamber circulates in the air circulation path via a fan filter unit provided in the inner chamber, a clean second air flow, independent from the first air flow circulating in the inner chamber and air circulation path, being directly supplied to a region near the interface box opener from the outside of the cleanroom.