Abstract: A semiconductor element and a circuit thereof are formed on the front surface of a semiconductor substrate of a semiconductor device and are protected with an insulating film. An opening is bored that penetrates from the front surface to the back surface of the substrate at a predetermined position of the substrate. A buried wiring line of a metal film, which becomes a semiconductor substrate penetrative conductor, is formed on the inner surface of the opening. The space enclosed by the buried wiring line is filled with a resin film. A grounding pad or a terminal pad is disposed at a predetermined position on the back surface of the semiconductor substrate.

Abstract: Before being used for a LPCVD device, a tool is washed first and on the surface of the tool a TEOS-NSG film, which is the film to be formed on a semiconductor substrate and whose etching speed is faster than that of a nitride film, is coated in advance. If the tool coated in the abovementioned manner is used to form a film on the semiconductor substrate, the nitride film formed on the substrate is also adhered to and deposited on the tool and if wet etching is applied to the tool, the TEOS-NSG film underlying the nitride film is exposed at the portions where the nitride film is thinner than at other portions. Since the etching time of the TEOS-NSG film is faster than that of the nitride film, the TEOS-NSG film is selectively etched. When the TEOS-NSG film is being removed, the nitride film left on the TEOS-NSG film is also peeled and removed at the same time. Thereby, reproduction can be achieved by etching without damage.

Abstract: The vertical blade saw assembly for ceramic and masonry materials is designed to provide an assembly that allows the user to make cuts of any shape to ceramic tiles and masonry materials in order to permit the installation of precision cuts for a particular setting. The assembly has an electric drive motor that is protected from the coolant used to keep the blade from overheating. The assembly has a plurality of parallel arms that are connected and permit the oscillating motion of the arms. The vertical blade is connected to the arms which place the blade in motion. The assembly has a base unit to provide support for the assembly. A coolant tray is positioned around the base unit. A water pump and accompanying tubing is used to circulate the coolant to the blade. Several cutting blades are also disclosed.

Abstract: A method for manufacturing projection weld connections between plate parts of electrically conductive material such as body parts of automobiles in which a triangular projection is pressed in one of the plate parts, the projection having a rectangular base. Welding takes place under pressure using a pulse of current of about 15,000 to 50,000 amperes for 1 to 10 milliseconds.

Abstract: A semiconductor storage device such as a DRAM is configured to enable testing on defectiveness of memory cells by an existing memory tester, which locates defect cells to be replaced with redundancy cells by a redundancy circuit. Herein, a write circuit writes multiple-bit data to memory cells of a memory cell array under testing. Then, the multiple-bit data are read from the memory cell array by a read circuit and are compared with original one to make decisions of “pass” or “fail” on the memory cells by the memory tester. Specifically, the read circuit is configured by plural pairs of a data output circuit and a data compression circuit with respect to plural sets of prescribed data each of which consists of a prescribed number of bits corresponding to prescribed memory cells which are subjected to simultaneous replacement.

Abstract: A cell for electrowinning a metal in powder form from solution includes a housing having an inlet towards one end thereof and an outlet towards an opposed end. The cell has a cylindrical anode extending substantially axially through the housing and a cathode surrounding the anode spaced outwardly away therefrom. The anode and cathode define a flow passage therebetween having a gap of 5 to 25 millimeters. In use the cell has a substantially vertical orientation with the inlet at the bottom and the outlet at the top. Periodically, flow process solution is interrupted and flush solution is passed in a reverse direction through the cell to remove powder metal from the cathode. A bank of cells in which the individual cells are connected in parallel to respectively an inlet main and an outlet main is also disclosed.

Abstract: A method of providing a Private Telephone Network over a Public Telephone Network is described. A Private Network is a telecommunications service which has controlled access, and is generally provided to customers having two or more geographic locations. A Private Network is provided by embedding originating customer site identification and a Private Network Routing Code into an Initial Address Message at the originating End Office associated with the originating customer site. This Initial Address Message is routed to a Service Switching Point by the Private Network Routing Code. At the Service Switching Point, reference is made to databases defining the members of the Private Network, and a destination End Office identification and a destination customer site identification associated with the destination customer site is embedded into the Initial Address Message.

Abstract: In a non-aqueous electrolyte secondary battery in which a battery element which is constructed by forming an anode active material layer and a cathode active material layer on an anode collecting body and a cathode collecting body, respectively, and laminating and winding them together with two separators, is housed in a battery can. An electrical connecting member for electrical connection between an inner electrode lead and an external terminal is designed to have spring property so that a winding core is pressurized and fixed to the center of the battery can, and the battery is structured such that connection between the inner lead and the connecting member can be made on an end face of the winding core inside of the battery can.

Abstract: A cold-cathode electron gun includes a cold cathode, a conical Wehnelt electrode, and an undercut. The cold cathode has an emitter formed on a substrate to emit electrons,. a gate electrode formed on the substrate through a first insulating film so as to surround a distal end of the emitter, and a focusing electrode formed on the gate electrode through a second insulating film to correspond to the gate electrode. The conical Wehnelt electrode connects the focusing electrode to a first external power supply. The Wehnelt electrode has an opening, at its conical distal end, that comes into with the cold cathode to surround an emitter region including the emitter, gate electrode, and focusing electrode. The undercut is formed in a portion of the Wehnelt electrode which is to come into contact with the focusing electrode to correspond to the gate electrode, thereby forming a non-contact portion.

Abstract: The invention relates mainly to a concrete pavement tile, which produces a clearly recognizable sound when touched with a blind person's cane or a white stick. In practice it appears useful to incorporate sound sources in guide paths for the blind. The invention has solved this problem by providing a pavement tile (1) with an upper plate (3) of metal, which is supported by the tile at its circumference. The plate can be provided with regularly distributed outwardly projecting tears, bumps or ledges (6). Below the plate there is a sound space (2) which can be formed by pressing the plate, upwardly convex, whereas a hollow executed tile gives the same effect.

Abstract: A reflected light from the edge of a back shield film 3 and an incident light from the edge of a black matrix are blocked by forming a dummy contact hole 7 not reaching the back shield film 3 at least in the interlayer film 4 on the back shield film near the lateral face of the thin film transistor along the longitudinal direction of the channel within the region delimited by the back shield film 3 and the black matrix 12, and forming a film made of at least an interconnection material on the side wall of the dummy contact hole.

Abstract: A surface of a substrate is oxidized at a temperature equal to or higher than 1050° C., or at a oxidation speed equal to or higher than 7.5 nm/min to form an oxide film with a thickness equal to or more than 1500 nm. when the oxide film is removed, a density of pits existent at the surface of a substrate is equal to or less than that prior to the oxidation treatment and a depth of a pit existent there is equal to or less than 50 nm. An element isolation withstand voltage can be prevented from lowering and a fabrication yield of a miniaturized, highly integrated semiconductor device can be improved.

Abstract: A three-state buffer circuit has a pull-up side transistor and a pull-down side transistor connected in series between an external power supply potential and a grounding voltage. An output signal is outputted from a node between the pull-up and pull-down transistors. A first level shift circuit is connected to a gate of the pull-up side transistor, and a voltage of a data signal is converted from an internal power supply potential lower than an external power supply potential to the external power supply potential. A second level shift circuit is connected to a gate of the pull-down side transistor, and a voltage of a data signal is converted from the internal power supply potential to the external power supply potential.

Abstract: A DDR-SDRM includes a data write section including a latch section for latching first write data at a rising edge of a data strobe signal and second write data at a falling edge of the data strobe signal, and a write buffer section for writing the first write data and the second write data at a time based on the signals generated from the data strobe signal. A read operation is conducted based on the system clock signal.

Abstract: A plurality of slit-shaped space regions are provided on an anode active material layer on a front surface or a rear surface of an anode sheet so as to reach end planes to make it easy to inject an electrolyte into a scrolled body or a jelly roll of a non-aqueous electrolyte secondary battery through the slit-shaped space regions.

Abstract: A lateral bipolar type input/output protection device of the present invention includes a N type well formed below an emitter impurity diffusion layer of N type over a P type substrate. With such construction of the lateral bipolar type input/output protection device, a parasitic bipolar operation occurs easily and sufficient electrostatic durability without degradation of protection performance of the protection device even when a semiconductor integrated circuit is miniaturized by employing the STI isolation structure.

Abstract: First and second transparent substrates which are arranged to face each other are provided to a color liquid crystal display panel. A liquid crystal layer is provided between the first and the second transparent substrates. A plurality of thin film transistors are provided on the first transparent substrate. An insulation film provided on the first transparent substrate so as to cover the thin film transistors. A color filter which includes first to third color layers stacked on the insulation layer is provided. A contacting color layer is provided on the insulation film in a region above the thin film transistors. The contacting color layer has at least one color layer selected from a group of composed of the first to third color layers. A black matrix is provided on the contacting color layer. The black matrix has opening portions for transmitting light from the color filter.

Abstract: Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Abstract: In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At lest a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.

Abstract: A method of controlling a clock, including the steps of (a) receiving an external clock signal, (b) calculating a first period of time defined as (T1−T2) wherein T1 is a cycle of the external clock signal, and T2 is a period of time during which the external clock signal is transmitted through devices generating skew to the external clock signal, (c) stopping the external clock signal to be transmitted by the first period of time, and (d) driving the external clock signal to thereby turn the external clock signal into an internal clock signal. The method makes it possible to detect delay in a clock signal, and generate no delay error inherent to a digital circuit.