Abstract: A container is disclosed for housing a tray or blister pack. The container includes a shell (40) with an internal volume for holding the tray or blister pack, and a cover (10) with a base (11), hinge (13), and lid (12) for enclosing the shell (40).

Abstract: There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

Abstract: A transcoder and methods of encoding inter-prediction frames of a downsampled video wherein the downsampled video is a spatially downsampled version of a full-resolution video. Full-resolution motion vectors are downscaled and a weighting factor is calculated for each downscaled motion vector based upon the transform domain residual coefficients associated with that full-resolution motion vector. A motion vector prediction is made based on the weighted average using the downscaled motion vectors and their weighting factors.

Abstract: A thermal material-processing method wherein between the working spot of an electron beam and a workpiece a relative motion is brought about. Prior to the actual thermal treatment an effective processing contour is ascertained, in that the working spot of the electron beam executes, in accordance with the stored data of an ideal processing contour, a relative motion in relation to the workpiece, and on this relative motion a scan motion is superimposed which is directed transversely to the ideal processing contour. In this manner, both geometrical and magnetically conditioned deviations of the points of incidence of the electron beam on the workpiece can be compensated.

Abstract: Elements of the present invention relate to systems and methods for generating, modifying and applying backlight array driving values. In some embodiments, color ratios are used to determine backlight array driving values that reduce color shift at side-view angles. In some embodiments, backlight color values may be adjusted to also reduce color shift from side-view angles.

Abstract: A radiographic imaging device includes: a panel unit accommodating a radiation detection panel; a control unit accommodating a control section and a power source section; and a connection portion, a first end portion of the connection portion being attached to a side portion of the panel unit so as to be rotatable around a first axis that is substantially parallel to an irradiation surface of the panel unit, and a second end portion of the connection portion being attached to the control unit so as to be rotatable around a second axis that is substantially parallel to the first axis.

Abstract: A beam anchor. The beam anchor is generally used for attaching to a flanged beam that has been made a part of a structure, to provide fall protection for a worker working on the structure. The beam anchor includes a main cross-member with a beam capturing member at each end. One or both of the capturing members have associated therewith respective yaw restoring mechanisms providing a combined restoring torque for urging the cross-member in counteraction to twisting thereof by a yaw angle in a yaw plane that is substantially parallel to the surface portions. Preferably, a lanyard attachment member is slidably disposed on the cross-member and spring-biased into a relatively centered position between the capturing members.

Abstract: A roadside device (15) is provided with a corresponding table in the case where there is an item of a new version of a taste data table to take over from user taste information in an item of an old version of the taste data table. In the corresponding table, item numbers “52”, “53”, “62” and “63” in the old version of the taste table, for example, are made to correspond to item numbers “52”, “53” and “63” in the new version of the taste table. An ITS vehicle-mounted device (17) sets user taste data in the item numbers of the old version corresponding to the item numbers of the new version to default values of the items in the new version for a transmitting-destination user of the taste data table of the new version and transmits the default data to an ITS vehicle-mounted device (17) of the transmitting-destination user.

Abstract: The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.

Abstract: A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

Abstract: An SOI substrate having a single crystal semiconductor layer with high surface planarity is manufactured. A semiconductor substrate is doped with hydrogen, whereby a damaged region which contains large quantity of hydrogen is formed. After a single crystal semiconductor substrate and a supporting substrate are bonded together, the semiconductor substrate is heated, whereby the single crystal semiconductor substrate is separated in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation plane of the single crystal semiconductor layer separated from the single crystal semiconductor substrate, laser beam irradiation is performed. By irradiation with a laser beam, the single crystal semiconductor layer is melted, whereby planarity of the surface of the single crystal semiconductor layer is improved and re-single-crystallization is performed.

Abstract: To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.

Abstract: Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

Abstract: A first device has a display that is able to show information. The information is to be exchanged with a second device. The information is cleared from the display following receipt of an indication from the second device that the information has been successfully inputted at the second device.

Abstract: The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer.

Abstract: A headset includes a voice print match application or speech recognition application. The voice print match application receives a user speech corresponding to a submitted voice print phrase key upon determining a donned condition, where the user speech is compared to the predetermined voice print phrase key to validate an identity of the headset user. The speech recognition application receives a user speech corresponding to a password or PIN and recognizes the password or PIN. The recognized password or PIN is compared to a valid password or PIN to validate the identity of the headset user.

Abstract: A plasma processing system for processing a wafer is provided. The system includes an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support the wafer. The ESC includes a positive terminal for providing a first force to the wafer and a negative terminal for providing a second force to the wafer. The system also includes a first circuit arrangement configured to measure at least a first voltage for determining a value of a positive load current applied to the positive terminal. The system further includes a second circuit arrangement configured to measure at least a second voltage for determining a value of a negative load current applied to the negative terminal. The system yet also includes circuitry configured to adjust a bias voltage using the values of the positive load current and the negative load current for balancing the first force and the second force.

Abstract: A portable radiographic image capturing device has: an image capturing unit at which is provided a radiation surface onto which radiation is irradiated at a time of capturing a radiographic image, and that captures a radiographic image expressed by radiation irradiated onto the radiation surface, and that incorporates therein a radiation detector that outputs electric signals expressing a captured radiographic image; and a control unit that is connected to the image capturing unit, and that incorporates therein a controller that controls image capturing operations of the radiation detector, and that can be changed between an expanded state in which the radiation surface is exposed to an exterior and a housed state in which the control unit covers the radiation surface.

Abstract: In accordance with a first aspect of the invention there is a unified call center system for multiple service providers comprising at least one server; and at least one database in communication with the at least one server. A service provider executes software stored on the at least one server to register an account, the registration process requiring the service provider to enter a predetermined set of information, including at least one identifier for an electronic voice communication device, an additional identifier for an electronic communication device (voice or text) and a personal identifier. After entry of the predetermined set of information, the software generates a unique identifier for the account and communicates the unique identifier and a return destination address for activating the account. The service provider then operates to activate the account by communicating their personal identifier to the return destination address using the electronic communication device.

Abstract: Variation occurs in transistor characteristics. The present invention relates to a signal line driver circuit comprising a plurality of current source circuits respectively corresponding to a plurality of wirings, characterized in that: the plurality of current source circuits each comprise capacitor means and supply means; and the plurality of current source circuits each convert a supplied current into a voltage in accordance with a video signal, and supply a current corresponding to the converted voltage.