Abstract: A product and method for displaying athletic data and certain information on skin is described. Said information being, but not limited to, an athlete's pacing goals for an athletic event, a course map, or other event information helpful to an athlete while competing in an athletic event. Said information preferably being displayed in the form of a temporary tattoo that can be applied to an athlete's skin so that the information is readily available and convenient to use during the event.

Abstract: An electrical connector includes an insulating housing and a plurality of terminals. The terminal includes a base having an upper end and a lower end, a flexible arm extending upward from the upper end of the base, a retaining portion extending upward from the upper end of the base, and at least one holding leg extended from the lower end of the base. Each holding leg includes a transition arm extending downward from the lower end of the base and a welding portion extending downward from the transition arm. The welding portion is formed with a substantially arc-shaped inner edge. The inner edge of the holding leg defines a claw structure to retain a solder ball with the insulating housing corporately.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed.

Abstract: A method for establishing a call rapidly in a cluster communication system based on code division multiple access, comprising the following steps: a dispatching station server transmitting a normal group call request to a base station subsystem after receiving a normal group call request sent by a calling terminal; the each base station in a dispatching area allocating resource and establishing a forward-reverse traffic channel required by a normal group call service in the base station side after receiving the normal group call request; each sector of the base station in the dispatching area sending a broadcast channel assignment message in a form of broadcast message to the terminals in an idle state in the sector in a forward control channel; the terminals in the sector comparing a broadcast address with a group identification stored, if matching, the terminal establishing each service channel in the side of the terminal in the called state according to the broadcast channel assignment message received; if

Abstract: An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to manufacture a semiconductor device with high reliability by using the semiconductor substrate provided with a single crystal semiconductor layer with a high degree of flatness. In a manufacturing process of a semiconductor substrate, a thin embrittled region containing a large crystal defect is formed in a single crystal semiconductor substrate at a predetermined depth by subjecting the single crystal semiconductor substrate to a rare gas ion irradiation step, a laser irradiation step, and a hydrogen ion irradiation step. Then, by performing a separation heating step, a single crystal semiconductor layer that is flatter on a surface side than the embrittled region is transferred to a base substrate.

Abstract: Active surface coupled polymerases, surfaces that include such polymerases, and methods of making and using surface-attached polymerases are provided.

Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Abstract: Variation occurs in transistor characteristics. The present invention relates to a signal line driver circuit comprising: a plurality of current source circuits corresponding to a plurality of wirings; and a shift register, characterized in that: the plurality of current source circuits each comprise capacitor means for converting a supplied current to a voltage in accordance with a sampling pulse supplied from the shift register and supply means for supplying a current corresponding to the converted voltage.

Abstract: A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.

Abstract: An electric motor (10) has: a stator (12) and a rotor (14) having a shaft (87). The rotor (14) has a sensor magnet (82) having a number SP of sensor poles (71, 72, 73, 74) for generating a predetermined distribution of the magnetic flux density, such that SP=2, 4, 6, 8, etc. The motor also has at least two rotor position sensors (450, 455, 460, 465) for generating rotor position signals (B_S1, B_S2) characterizing the magnetic flux density, the rotor position sensors (450, 455, 460, 465) being arranged in the region (30) of the circumference of the sensor magnet (82). The motor also has an evaluation apparatus (32) that ascertains, from the rotor position signals (B_S1, B_S2), an absolute value (phi_el, phi_mech) for the rotational position of the rotor (14). A method of generating an absolute value for the rotational position of an electric motor is likewise described.

Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Abstract: A semiconductor device is provided, which comprises at least a cell including a plurality of memory elements connected in series. Each of the plurality of memory elements includes a channel formation region, a source and drain regions, a floating gate, and a control gate. Each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region.

Abstract: Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.

Abstract: Non-human animal models for frontotemporal lobar degeneration with ubiquitin-positive inclusions (FTLD-U) are disclosed. The invention relates to a transgenic mouse whose genome comprises a transgene operably linked to a neuronal specific promoter effective for an increased expression of the transgene in the brain of the mouse, in which the transgene comprises a nucleotide sequence encoding TAR DNA-binding protein 43 (TDP-43). The transgenic mouse exhibits reduced or impaired learning and memory capacity, and may further exhibits progressively impaired or reduced motor functions. Methods of using such animal models are also disclosed.

Abstract: A resin for thermal imprint including a cyclic-olefin-based thermoplastic resin that contains at least one of skeletons represented by the following chemical equation 1 or the following chemical equation 2 in a main chain. The glass transition temperature Tg (° C.) and the value ([M]) of MFR at 260° C. satisfy the following equation 1, and [M]>10. The thermal imprint characteristics (transferability, mold release characteristic, and the like) are superior and the productivity (throughput) is improved. Tg (° C.

Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.