Abstract: A memory including a memory cell array, a word line decoder, a first and a second reference bit line generators are provided. The memory cell array has first and last bit lines respectively disposed at two sides of the memory cell array. The word line decoder generates a pre-word line signal. The first and the second reference bit line generators respectively detect voltage level variations of the first and last bit lines according to the pre-word line signal, so as to generate a first and a second cut-back signals. The first reference bit line generator transmits the first cut-back signal to the second reference bit line generator, the second reference bit line generator transmits the first and the second cut-back signals to the word line decoder, and the word line decoder generates a word line signal according to the first and the second cut-back signals and the pre-word line signal.

Abstract: A data access method for accessing data in a flash memory is provided, wherein the data has a plurality of sub-data. The data access method includes generating an error correction code (ECC) for the data and writing the data and the ECC into the flash memory. The data access method also includes generating a corresponding bit checking code for each of the sub-data and writing the bit checking codes into the flash memory. When the sub-data subsequently is read from the flash memory, whether the sub-data contains any error is determined only according to the bit checking code corresponding to the sub-data. Thereby, the data access efficiency is improved.

Abstract: A device for transporting a magnetic head, a device for inspecting a magnetic head, and a method for manufacturing a magnetic head are provided. The device for transporting a magnetic head is capable of freely changing a posture of a thin film magnetic head when transporting a row bar-shaped thin film magnetic head. The transporting device for transporting a slender rectangular plate-like, that is, row bar-shaped magnetic head, cut from a wafer is capable of performing vertical installation and horizontal installation. The transporting device for transporting a slender rectangular plate-like, i.e., row bar-shaped magnetic head, is capable of performing the vertical installation and horizontal installation, and changing the posture of the magnetic head from vertical installation into horizontal installation and from horizontal installation into vertical installation when transporting the magnetic head between processes.

Abstract: A data read method for reading data to be accessed by a host system from a plurality of flash memory modules is provided. The data read method includes receiving command queuing information related to a plurality of host read commands from the host system, each of the host read commands is corresponding to one of a plurality of data input/output buses coupled to the flash memory modules. The data read method also includes re-arranging the host read commands and generating a command giving sequence according to the data input/output buses corresponding to the host read commands. The data read method further includes sequentially receiving and processing the host read commands from the host system according to the command giving sequence and pre-reading data corresponding to a second host read command. Thereby, the time for executing the host read commands can be effectively shortened.

Abstract: A data management method, a flash memory storage system and a controller using the same are provided. The data management method is used for accessing a flash memory of the flash memory storage system, wherein the flash memory includes a plurality of physical blocks and the physical blocks are grouped into a data area and a spare area. The data management method includes configuring a plurality of logical blocks for be accessed by a host. The data management method also includes dividing each physical block into a plurality of physical parts and mapping the logical blocks to the physical parts. The data management method further includes accessing the mapped physical parts according to the physical blocks to be accessed by the host. Accordingly, it is possible to increase the usage and the accessing speed of the physical blocks in the flash memory storage system.

Abstract: A memory management and writing method for managing a plurality of physical units of a memory chip is provided. The present method includes grouping the physical units into a first physical unit group and a second physical unit group, recording and calculating a first erase count of the first physical unit group and a second erase count of the second physical unit group, and calculating an erase count difference between the first erase count and the second erase count. The present method also includes determining whether the erase count difference is larger than an erase count difference threshold when a write command is received. The method further includes executing a switched writing procedure to write data corresponding to the write command into the memory chip when the erase count difference is larger than the erase count difference threshold. Thereby, the lifespan of the memory chip is effectively prolonged.

Abstract: A projection module includes a base, a light source, a light valve, a lens module, and an adjustment module. The light source is disposed on the base and capable of providing an illumination beam. The light valve is disposed on the base and capable of converting the illumination beam into an image beam. The lens module is slidably disposed on the base and capable of projecting the image beam. The adjustment mechanism includes a rolling wheel and a slide pin. The rolling wheel is pivotably mounted to the base and includes a slide groove. The slide pin is fixed to the lens module and extends into the slide groove. The rolling wheel is capable of pivoting to drive the slide groove to pivot and the slide groove moves the slide pin to drive the lens module to move with respect to the base when the slide groove pivots.

Abstract: A memory array is shown, including memory cells with source and drain doped regions, and global bit lines coupled to the doped regions via select transistors. The connections of the select transistors are configured such that the respective loading capacitances of two global bit lines respectively coupled to the source and the drain of a memory cell to be read do not vary with the memory cell to be read.

Abstract: A system, a controller, and a method thereof for transmitting data stream from a host to a peripheral device with a chip are provided. At least a part of a data stream is transmitted from the host to the peripheral device. Then, the host inerrably receives a response message generated by the chip by executing a plurality of read commands. The data stream and the response message have corresponding write tokens, and the write token of the data stream is compared with the write token of the response message to verify the accuracy of the response message.

Abstract: A method of operating a memory cell for 3D array of this invention is described as follows. Carriers of a first type are injected into a charge storage layer of the memory cell by applying a double-side biased (DSB) voltage to double sides of the memory cell. Carriers of a second type are injected into the charge storage layer by applying FN voltages.

Abstract: A data management method for a flash memory storage system having a cache memory is provided. The data management method includes writing data into a flash memory when a write command is executed, and determining currently a state of all the writing data which is temporarily stored in the cache memory. Wherein, if the state indicates that a time for writing all the writing data temporarily stored in the cache memory into a flash memory may exceed an upper limit processing time, a portion of the writing data temporarily stored in the cache memory is first written into the flash memory. Accordingly, the data management method may effectively avoid a delay caused by a flush command issued from the host for flushing the cache memory.

Abstract: A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.

Abstract: A circuit board including a first dielectric layer having a first surface and a second surface, a first circuit layer, a second dielectric layer, and a second circuit layer is provided. At least one trench is formed on the first surface, and the first circuit layer is formed on an inside wall of the trench. In addition, the second dielectric layer is disposed in the trench, and covers the first circuit layer. The second circuit layer is disposed in the trench, and the second dielectric layer is located between the first circuit layer and the second circuit layer. A manufacturing method of the circuit board is further provided.

Abstract: An echo canceller and an echo cancellation method are provided. In the echo cancellation method, a transmitting data sequence is received, and M taps are provided accordingly. In addition, the M taps are received, and N taps are output according to an echo distribution information, in which the M and N are natural numbers, and M>N. Besides, the N taps are multiplied by N tap coefficients respectively to generate N products. Further, the N products are summed up to generate an echo cancellation signal. Thereby, the cost of the echo cancellation is decreased.

Abstract: A memory management method for a non-volatile memory and a controller using the same are provided. The non-volatile memory is substantially divided into a plurality of blocks. First, non-erasing information of a plurality of memory units comprising at least one block is recoded and used as a reference to establish an evaluation value. Then, whether to move data of at least one block on the memory units to another memory unit according to the evaluation value is determined. Accordingly, problems of read disturb and data retention due to excessive reading times can be resolved.

Abstract: A circuit board including a circuit substrate, a first dielectric layer, an antagonistic activation layer, a first conductive layer, a second conductive layer and a second dielectric layer is provided. The circuit substrate has a first surface and a first circuit layer. The first dielectric layer is disposed on the circuit substrate and covers the first surface and the first circuit layer. The first dielectric layer has a second surface, at least a blind via extending from the second surface to the first circuit layer and an intaglio pattern. The antagonistic activation layer is disposed on the second surface of the dielectric layer. The first conductive layer is disposed in the blind via. The second conductive layer is disposed in the intaglio pattern and the blind via and covers the first conductive layer. The second conductive layer is electrically connected with the first circuit layer via the first conductive layer.

Abstract: A method of manufacturing a connector is provided. Firstly, a substrate having a first surface, a second surface opposite to the first surface and a through hole is provided. Next, a first conductive layer covering the inside wall of the through hole is formed on the substrate. Then, a filler is filled in the through hole to form a filler post. Next, a conductive elastic cantilever is formed over the first surface and electrically connected to the first conductive layer. Then, a gold layer is formed on the conductive elastic cantilever and over the first surface. A solder ball electrically connected to the first conductive layer is formed over the second surface.