Abstract: A GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping is described. The laser structure includes a molecular beam epitaxy (MBE)-deposited hetero-structure comprising AlGaAs layers with an active GaAs layer sandwiched therebetween. These layers are grown on the patterned surface of a GaAs substrate which provides (100)-plane oriented planar ridges and grooves, the edges being (111A)-plane oriented. p-n homojunctions are formed in the GaAs layer at the intersections of the (111A) and (100) crystal planes. Ohmic contacts are provided for applying currents of at least the threshold level of the junctions. These TJS lasers can be used to form 1- or 2-dimensional arrays of phase-coupled lasers for providing high optical power output.

Abstract: A structure and method are described for forming different metal silicide phases, using the same metallurgy and the same processing steps. A layer of metal is deposited on a silicon substrate and is heated to thermally convert the metal-silicon combination to a metal silicide. The metal silicide phase which forms is strongly dependent upon the dopant and doping level in the silicon substrate, for various combinations of metal and dopant. Thus, different metal silicides can be formed on different regions of the substrate in accordance with the dopant and doping levels in those different regions, even though the process steps and metallurgy are the same. These different metal silicides can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers.

Abstract: A method and apparatus are described for photoetching organic biological matter without requiring heat as the dominant etching mechanism. Far-ultraviolet radiation of wavelengths less than 200 nm are used to selectively remove organic biological material, where the radiation has an energy fluence sufficiently great to cause ablative photodecomposition. Either continuous wave or pulse radiation can be used, a suitable ultraviolet light source being an ArF excimer laser having an output at 193 nm. The exposed biological material is ablatively photodecomposed without heating or damage to the rest of the organic material. Medical and dental applications include the removal of damaged or unhealthy tissue from bone, removal of skin lesions, cutting or sectioning healthy tissue, and the treatment of decayed teeth.

Abstract: A technique for making ohmic electrical interconnections between semiconductor regions of opposite conductivity type, without requiring metallic interconnection lines. This technique has applicability in any circuit using bipolar devices, and in particular is useful to provide a very dense static memory array of bipolar transistors. To join the opposite conductivity regions, intermediate layers are formed including a silicide of a refractory metal, such as W, Mo, Ta, etc. and at least one layer of doped polycrystalline semiconductor material. For a single crystal of silicon having N and P type regions, the refractory metal silicide forms an electrical connection to at least one doped polysilicon layer of a first conductivity type and to either a single crystal semiconductor region of the opposite conductivity type or to another polysilicon layer which also has the opposite conductivity type.

Abstract: An electron sensitive surface is patternized treated to a high resolution pattern of low-energy electrons without any need to do focussing by emitting the low-energy electrons from a pointed electrode and positioning the apex of the pointed electron emitting source suitably close to the surface being treated.

Abstract: A surface to be tested is illuminated with two beams polarized perpendicularly to each other, extending symmetrically to an optical axis and focussed on the surface by a lens. The light scattered at the surface is separated from the directly reflected light by a reflecting diaphragm, and by means of electro-optical compensation (with an electro-optical modulator and photodetector) the scattered light is tested for phase difference which is a function of the distance of a scattering element of the surface from the optical axis. The phase difference within the illuminated spot is a unique function of the distance of the scattering element from the optical axis, if a diffraction-limited optical system is used.

Abstract: A structure and method for fabricating the structure, which includes a layer containing a refractory metal and a substrate to which the refractory metal-containing layer does not strongly adhere, there being a thin bonding layer between the substrate and the refractory metal-containing layer for providing good adherence between the refractory metal-containing layer and the substrate. The bonding layer is an oxide, nitride or mixed oxy-nitride layer initially prepared to be Si-rich in a surface region thereof. Inclusions of the refractory metal are produced in the bonding layer by substituting the refractory metal for excess free silicon therein. These inclusions become nucleation and bonding sites for refractory metal deposition, ensuring good adhesion.

Abstract: A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown, such as an additional semiconductor layer. The technique for forming such a structure utilizes a starting material for metal compound formation which leaves a residue that is preferentially etched in order to preserve the embedded metal compound and to leave a substantially planar surface comprising the metal compound epitaxial regions and the unreacted surface regions of the semiconductor layer.

Abstract: A technique is described for increasing the adhesion between metals and organic substrates, where the metals are those which normally only very weakly bond to the substrate. These metals include Ni, Cu, Al, Ag, Au, Ta, Pt, Ir, Rh, Pd, Zn, and Cd. The organic substrates include mylar, polyimides, polyesters, polyethylene, polystyrene, etc. Enhanced adhesion occurs when intermixing between the depositing metal atoms and the substrate is optimized to a depth less than about 1000 angstroms into the substrate. This occurs in a critical substrate temperature range of about (0.6-0.8) T.sub.c, where T.sub.c is the curing temperature of the substrate. The deposition rate of the metal atoms is chosen such that the arrival rate of the metal atoms at the surface of the substrate is comparable to or less than the rate of diffusion of metal atoms into the substrate. This provides optimum intermixing and maximum adhesion.

Abstract: This invention relates to the prevention of mechanical and electrical failures in structures that are heat-treated, and more particularly relates to the use of coating layers containing Co and P on corrosible materials such as Cu. The invention has significant utility in the protection of Cu current-carrying lines in electronic structures that comprise multi layers that are subjected to heat treatments that would normally adversely affect the Cu lines. The CoP coating layer also acts to prevent interdiffusion between Cu and contact metals, such as Au.

Abstract: An improved resistive ribbon for thermal transfer priting in which a coating is located on the resistive layer in order to reduce contact resistance between the ribbon and printhead, thereby reducing undesirable heating at the contact region between the ribbon and printhead. The coating is comprised of compositions selected from the group consisting of Cr-N, Sn-SnO, ITO, AlN and Al-Al.sub.2 O.sub.3, where the resistivity of the coating is significantly less than the resistivity of the resistive layer of the ribbon. Further, the sheet resistivity of the coating is greater than the sheet resistivity of the resistive layer. The rest of the resistive ribbon can be comprised of any combination of the usually employed layers, such as a current return layer, a release layer for facilitating the transfer of ink from the ribbon to a carrier, and the ink layer itself.

Abstract: An improved resistive ribbon for thermal transfer printing is provided, where the ribbon includes a resistive layer, a metal current-return layer, a fusible ink layer, and an electric interface layer located between the resistive layer and the metal layer. The electrical interface layer is sufficiently thin so as not to impair the required mechanical properties of the ribbon (such as flexibility, stability, durability, etc.), and has as its primary function the enhancement of the electrical porperties of the ribbon. Specifically, interface resistance and/or knee voltage of the current-voltage characteristics of the ribbon are enhanced by the electrical interface layer.Preferred compositions of the interface layer include alkylalkoxy silanes of a specific formula, and especially nonsymmetrical compounds of that formula.

Abstract: A technique is described for producing very shallow doped regions in a substrate, at low temperatures. The doped regions are not in excess of about 300 angstroms in depth, and are formed at temperatures less than 700.degree. C. These shallow doped regions can be used in different applications, including the fabrication of semiconductor switching devices, diodes, and contacts. Overlayers containing the desired dopants are deposited on the substrate, after which an annealing step is carried out to institute the formation of a metallic compound. When the compound is formed, materials in the overlayers to be used as substrate dopants will be pushed ahead of the interface of the growing compound, and will be snowplowed into the top surface of the substrate, to produce the shallow doped region therein.

Abstract: A differential material removal process wherein a selected material can be rapidly removed without adverse impact to surrounding layers of different materials. Ultraviolet radiation is used to selectively remove metal without adversely harming adjacent polymer layers, in a metal-polymer multilayer structure. The wavelength (100-400 nm) of the ultraviolet radiation and the energy fluence per pulse are selected so that the removal rate of metal due to thermal processes is significantly greater than the removal rate of the polymer by ablative photodecomposition. This can occur at an energy fluence per pulse level greater than that at which the etch rate of the polymer begins to level off. For example, copper of a thickness less than 5 microns is rapidly etched in one or two pulses while adjacent polyimide layers are substantially unetched by the application of ultraviolet pulses of wave-lengths 248-351 nm, at energy fluences per pulse in excess of approximately 3 or 4 J/cm.sup.2.

Abstract: This light waveguide consists of an optically transparent body cut at one end to a sharp tip and polished optically flat at the other end. A metallization layer on its surface is thick enough to be opaque. By pressing the waveguide against a rigid plate the metallization is plastically deformed so as to expose a tiny aperture at the tip of the body through which light can pass. By carefully controlling the deformation of the metallization the diameter of the aperture can be kept between 10 and 500 nm. The waveguide can be incorporated in a semiconductor laser of a read/write head used in an optical storage device.

Abstract: A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrate temperature range is less than about 370.degree. C., while the total pressure range is in the range 0.05-1 Torr. WF.sub.6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.

Abstract: An improved resistive ribbon for resistive thermal transfer printing is described in which the resistive layer of the ribbon has enhanced thermal and mechanical properties. The ribbon is a multi-layer ribbon including a resistive layer, an electrical current return layer, and an ink layer. The resistive layer has an additive therein which phase separates and concentrates in a thin surface region near the interface of the resistive layer and the current return layer. This thin region has superior thermal and mechanical properties, and protects the remainder of the resistive layer during the printing operation, without adversely affecting the mechanical, electrical, and thermal properties of the overall resistive layer. These additives are those which will form a polymer having a sufficiently high dissociation temperature to withstand the adverse effects of heat build-up at the interface. Suitable additives include graphite fluorides, fluorocarbon resins such as Teflon.RTM., and CeF.sub.4.

Abstract: An improved scanning tunneling microscope comprising a semiconductor chip into which slots are etched to form a central portion linked by a first pair of stripes to an intermediate portion, which in turn is linked by a second pair of stripes to the main body of the chip. The pairs of stripes have mutually orthogonal directions to allow the center portion to perform movements in the x- and y-directions under the control of electrostatic forces created between the stripes and their opposite walls. The center portion has formed into it at least one tongue carrying an integrated, protruding tunnel tip which is capable of being moved in the z-direction by means of electrostatic forces between said tongue and the bottom of a cavity below the tongue.

Abstract: An improved electron bombardment induced conductivity apparatus and method is described for charge collection imaging of semiconductor materials and devices with unprecedented resolution. This is accomplished by bombarding a very small area of the surface of a specimen with low-energy electrons rather than high-energy electrons and by physically scanning (i.e. moving) the electron source itself (rather than only the beam of electrons) with respect to the specimen. A very small area of the specimen surface is bombarded with low-energy electrons without any need to do focussing by emitting the low-energy electrons from a sharply pointed electrode positioned very close to the surface being bombarded with the low-energy electrons. Hole-electron pairs created by the electron bombardment are sensed (preferably collected by an electric field) and a measurement of the sensed number of such pairs is displayed in synchronism with the electrode scanning to produce a charge collection image of the specimen.

Abstract: A superior wear-resistant coating is provided for metallic magnetic recording layers, where the improved coating is a hard carbon layer that is strongly bound to the underlying metallic magnetic recording layer by an intermediate layer of silicon. The silicon layer can be very thin, with a minimum thickness of a few atomic layers, and provides strong adhesion between the hard carbon protective layer and the metallic magnetic recording layer. A preferred technique for depositing both the intermediate silicon layer and the hard carbon layer is plasma deposition, since both of these depositions can be performed in the same reactor without breaking vacuum.