Abstract: An MOS capacitive structure comprising a substrate of a first conductivity type, a first region of the first conductivity type but having a different impurity concentration for contacting the substrate, a second region of opposite conductivity type for contacting the substrate, and a dielectric over a region of the substrate adjacent the first and second regions and having a conductive layer thereon forming one plate of the capacitor while the substrate opposite the conductive layer forms the other plate. The first and second regions are contacted and coupled together in order to provide good electrical contact to the substrate region opposite the conductive layer regardless of whether the substrate under the conductive layer is depleted or inverted.

Abstract: A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal films through one thermal cycle, it was discovered that only one of the proposed ions, argon, would suppress hillock formation for multiple subsequent thermal cycles. For the other species, hillock formation would reoccur after multiple cycles. This characteristic is important for double layer metal (DLM) processes to prevent interlayer shorting.

Abstract: A deep, buried n.sup.- channel blanket implant beneath both n.sup.- channel and p-channel devices in MOS integrated circuits, whether complementary MOS (CMOS) or not. It is known to use deep, lightly-doped n.sup.- channel implant to improve the characteristics of p-channel (PMOS) devices, although one skilled in the art would expect such an n.sup.- implant to be detrimental to n-channel (NMOS) devices. It has been discovered that such implants not only do not degrade the NMOS devices, but in fact improve their performance, with respect to body effect and junction capacitance.

Abstract: An integrated circuit test site assembly for testing pin grid array (PGA) packaged integrated circuits having removable contact pins. The removable contact pins, which are preferably spring-loaded pogo pins, enable the test site assembly to be repaired quickly and easily with a minimum of down time. In addition, the test site need only be loaded with the number of pins required to make contact with the PGA lead pattern.

Abstract: A voltage regulator circuit which provides a regulated output voltage by regulating output current at an output terminal is provided. The voltage regulator circuit operates in response to a clocked control signal. The regulated output voltage and a delayed signal of the regulated output voltage are both used to bias a selected one of series-connected transistors which sink current from the output terminal in response to the value of the output voltage and the frequency of the clocked control signal. A second control signal is provided for enabling or disabling the voltage regulator circuit.

Abstract: An integrated circuit microcomputer with EEPROM has a limited number of modes for operation. In at least first and second modes, the inner workings of the microcomputer, including the contents of the EEPROM, can be read externally from the microcomputer. An EEPROM security bit, when set, prevents the first mode from being entered and causes the EEPROM to be erased when the second mode is entered. The EEPROM is also erased if the security bit is erased.

Abstract: A static RAM has a plurality of sub-arrays arranged in rows and columns, each sub-array having word lines running the length of the sub-array in a top to bottom direction, and having bit lines running the width of the sub-array in a left to right direction, and having a word line driver for enabling a selected word line in response to receiving a row select signal corresponding to the selected word line; a global row decoder for providing the row select signals as determined by row address signals; a first plurality of column pre-decoders for performing a partial decode of data provided on the bit lines of a first of the rows of sub-arrays, each column pre-decoder corresponding to a particular sub-array; a second plurality of column pre-decoders for performing a partial decode of data provided on the bit lines of a second of the rows of sub-arrays, each column pre-decoder corresponding to a particular sub-array; and a plurality of sense amplifiers for sensing the output of the first and second column decoders

Abstract: An execution unit for a microprocessor comprising a first section for performing arithmetic and logic operations on data, a second section for performing arithmetic operations on data memory addresses, and a third section for performing arithmetic operations on instruction addresses is disclosed in which data addresses and instruction addresses may be simultaneously calculated.

Abstract: A fully differential amplifier which is compensated for both input offset voltage error and output common-mode variation is provided. The differential amplifier provides two very accurate output reference voltages which vary in proportion to the difference between first and second input voltages. In one form, the differential amplifier functions as an integrator. A differential amplifier is provided which uses first and second input pairs of differential transistors for normal differential operation and for common-mode output voltage regulation, respectively. Both input pairs of transistors must be compensated for offset voltage associated therewith. A compensation portion external to the differential amplifier is used to compensate for an offset voltage associated with circuitry within the differential amplifier for regulating the common-mode output voltage.

Abstract: A process is disclosed for fabricating a semiconductor device which includes a trench formed at the surface of the device substrate. The surface of the device substrate is oxidized and the oxide is patterned to form an opening which exposes a portion of the underlying surface. Ions are implanted through the opening and into the surface to form a damaged surface region which is coincident with the opening and extends under the edge of the oxide. A trench is etched by reactive ion etching using the opening in the oxide as an etch mask. The substrate, including the walls of the trench and the ion implant damaged surface portion under the edge of the oxide, is thermally oxidized. The oxidation rate is enhanced by the damage and causes a thicker oxide to grow in the damaged region which forms a collar around the intersection of the trench with the surface.

Abstract: A switched capacitor sample-and-hold circuit which compensates offset voltage error and switch feedthru error while having a one hundred percent duty cycle is provided. Two amplifiers are utilized. A first operational amplifier is disconnected from a second operational amplifier while being autozeroed. An input voltage is sampled onto an input capacitor. The input capacitor is disconnected from the input voltage and then coupled to the second operational amplifier which is in a unity gain configuration. After the sampled input voltage is charged onto an output load, the first operational amplifier is disconnected from the second operational amplifier and the sampling process is repeated. The second operational amplifier is also offset voltage compensated by the first operational amplifier.

Abstract: A memory has a read mode in which data is read from a bit line pair selected by a column address and a write mode in which data is written onto a selected bit line pair. The selected bit line pair is coupled to a data line pair via a column decoder in response to a column address. Upon a transition from the write mode to the read mode the column decoder is disabled from coupling the selected data line to the data line pair for the duration of a column disable pulse. The column disable pulse is generated in response to a write transition pulse or a column transition pulse or both. The column transition pulse is generated in response to a change in the column address. The write transition pulse is generated in response to a write to read transition.

Abstract: A high voltage CMOS decoder and level translator for use in conjunction with EPROMS and EEPROMS utilizes additional series coupled field effect transistors maintained in an on condition so a to prevent the voltage across the pull-up and pull-down field effect transistors from exceeding their break down voltages. For example, in addition to a pull-up P-channel field effect transistor and a pull-down N-channel field effect transistor in the output inverter circuit, additional P-channel and N-channel field effect transistors are coupled in series between the pull-up and pull-down transistors to maintain the voltage across the pull-up and pull-down transistors from exceeding there breakdown voltages.

Abstract: A method of providing simultaneous voice and data communication for multiple ports in a digital line card of a PBX is provided. In one form, 64 K baud non-blocking voice communication for seven coupled ports and simultaneous 9.6 K baud user data communication for each port may be implemented in a single conventional line card. Voice and data bits are transmitted in frames comprising thirty-two time slots. Data bits from the various user ports are multiplexed into a single eight bit time slot. Voice bits for each port are transmitted in eight bit time slots. In one form, each time frame comprises four time slots for data and twenty-eight time slots for voice.

Abstract: A successive approximation analog-to-digital converter, of the type which successively compares an analog level represented by binary weighted bits with an analog signal and in response thereto generates a signal indicating whether each successive binary bit should be set or reset, includes a shaft register for counting cycles during the sampling phase and generating signals for controlling the setting and resetting of each bit. Each binary bit cell includes a latch capable of assuming first and second stable states. A first string of field-effect-transistors coupled to the latch and controlled by the shift register receives a first signal indicating that the latch should be reset. A second string of field-effect-transistors coupled to the latch and controlled by the shift register receives a signal indicating that the latch should remain in a set condition.

Abstract: Improved access to programmable logic arrays is provided by continuously asserting and negating a latch inputs control signal, continuously asserting and negating a control signal which discharges a first logic section of the array to provide frequent, current inputs to a second logic section of the PLA and discharging the second section of the PLA only upon receipt of an access request. In the case of asynchronous access, it is also necessary to generate a synchronized data strobe from the unsynchronized one and to generate an acknowledge signal to indicate the presence of valid output data. The disclosed method and apparatus provide access which has a short access time and which also provides outputs which reflect relatively current states of the inputs thereto.

Abstract: A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical metal-oxide-semiconductor field-effect-transistor (MOSFET) may be fabricated. One of the plates of the capacitor doubles as a source/drain layer of the transistor.

Abstract: A method and apparatus for generating floating point condition codes by using the data type of a result operand, rather than a magnitude relationship between two operands. The condition codes may then be combined to generate relations useful for identifying conditions for conditional branches or traps.

Abstract: In a data processing system having a first bus sized to accomodate 2.sup.x units of data and a second bus sized to accomodate 2.sup.y units of data, where x and y are positive integers and y is less than or equal to x, a method and apparatus for determining y from the x least significant bits of a control address, concatenated with a decode control bit, and then decoding the (x-y) most significant bits of the x control address bits to determine which of x data unit transceivers coupled between the first and second buses should be enabled.

Abstract: In a digital signal processing system, a logarithmic arithmetic logic unit is provided which selectively performs multiply/accumulate operations of operands in logarithmic number representation. Direct feed through of operands through an adder/subtractor circuit, even when an addition or subtraction is not effected, eliminates external bypass circuitry. A method for adding and subtracting operands in logarithmic number representation is provided. An adder/subtractor circuit which efficiently effects addition and subtraction of operands in logarithmic number representation over a wide dynamic range is provided.