Abstract: An optical proximity correction method is provided using a modified merit function based upon yield. Known failure mechanisms related to layout geometries are used to derive yield functions based upon distance values between layout features, such as, edge features. In comparing the edge points on the predicted layout pattern with the corresponding point on the design layout pattern, a yield test is first undertaken before movement of the points on the predicted layout pattern to a position of higher yield. Where yield is acceptable, no further movement is made. Where incremental movement of points results in coming within acceptable proximity before acceptable yield is reached, the point is flagged for further consideration.

Abstract: Solder balls, such as, low melt C4 solder balls undergo volume expansion during reflow. Where the solder balls are encapsulated, expansion pressure can cause damage to device integrity. A volume expansion region in the semiconductor chip substrate beneath each of the solder balls accommodates volume expansion. Air-cushioned diaphgrams, deformable materials and non-wettable surfaces may be used to permit return of the solder during cooling to its original site. A porous medium with voids sufficient to accommodate expansion may also be used.

Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: A silicon-on-insulator (SOI) structure is provided for forming through vias in a silicon wafer carrier structure without backside lithography. The SOI structure includes the silicon wafer carrier structure bonded to a silicon substrate structure with a layer of buried oxide and a layer of nitride separating these silicon structures. Vias are formed in the silicon carrier structure and through the oxide layer to the nitride layer and the walls of the via are passivated. The vias are filled with a filler material of either polysilicon or a conductive material. The substrate structure is then etched back to the nitride layer and the nitride layer is etched back to the filler material. Where the filler material is polysilicon, the polysilicon is etched away forming an open via to the top surface of the carrier wafer structure. The via is then backfilled with conductive material.

Abstract: A test chip module for testing the integrity of the flp chip solder ball interconnections between chip and substrate. The interconnections, are thermally stressed through an array of individual heaters formed in a layer of chip metallurgy to provide a uniform and ubiquitous source of heat. Current is passed through the interconnection to be tested by a current supply circuit using one signal I/O interconnection and the voltage drop across the interconnection to be tested from the current passed therethrough is measured by a voltage measuring circuit connected through another signal I/O interconnection. Stress initiating cracking and degradation at the interconnection creates a measurable change in voltage drop across the interconnection.

Abstract: An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip to backside metallurgy on the imaging chip. The backside metallurgy of the imaging chip is connected to metallurgy on the active surface of the logic chip using an array of solder bumps in BGA fashion. The interconnection arrangement provides a CSP which matches the space constraints of a cell phone, for example. The arrangement also utilizes minimal wire lengths for reduced noise. Connection of the CSP to a carrier package may be either by conductive through vias or wire bonding. The CSP is such that the imaging chip may readily be mounted across an aperture in the wall of a cell phone, for example, so as to expose the light sensitive pixels on the active surface of said imaging chip to light.

Abstract: A software tool is provided to analyze static source code. Source Code files are selected to define the project work space. A class and a method in the class are selected from said selected source code files. The tool generates a Call Tree as an ordered recursive sequence of all method calls in different classes or their instances that are invoked by said selected method in said selected class. A Sequence Diagram is generated from said Call Tree. The tool remembers all updates to the Call Tree used to generate the Sequence Diagram. This information is used when a generated Sequence Diagram is impacted due to changes made to any source code file included in the project.

Abstract: Conductive through vias are formed in electronic devices and electronic device carrier, such as, a silicon chip carrier. An annulus cavity is etched into the silicon carrier from the top side of the carrier and the cavity is filled with insulating material to form an isolation collar around a silicon core region. An insulating layer with at least one wiring level, having a portion in contact with the silicon core region, is formed on the top side of the carrier. Silicon is removed from the back side of the carrier sufficient to expose the distal portion of the isolation collar. The core region is etched out to expose the portion of the wiring level in contact with the silicon core region to form an empty via. The via is filled with conductive material in contact with the exposed portion of the wiring level to form a conductive through via to the wiring level. A solder bump formed, for example, from low melt C4 solder, is formed on the conductive via exposed on the carrier back side.

Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: A multilayer chip carrier with increased space for power distribution PTHs and reduced power-related noise. In a multilayer chip carrier with two signal redistribution fanout layers, in addition to signal escape from near-edge signal pads at the first fanout layer, remaining signal pads are moved closer to the edge of the chip footprint. At the voltage layer below the first fanout layer, the remaining signal pads are moved again, closer to the edge of the chip footprint. In the second fanout layer, below the voltage layer, the remaining signal pads escape. The region where signal pads are moved provides increased space for power PTHs.

Abstract: An electronic fabrication process and structure is provided for attaching discrete passive surface mount devices (SMD) to a substrate in a single step. A liquid noflow resin encapsulant containing flux material is dispensed between presoldered pads on a substrate. The SMD, having a pair of electrical contacts, is pressed into said encapsulant so that the electrical contacts make contact with said presoldered pads. Heat is applied to first activate said flux material and then reflow the solder on said presoldered pads to bond said SMD contacts to said presoldered pads. The reflow temperature is maintained for about 180 seconds during which time the resin solidifies. The resin encapsulant fills the space between substrate and SMD and forms fillets around the solder bonded contacts.

Abstract: A QFN package with improved joint solder thickness for improved second level attachment fatigue life. The copper leadframe of a QFN chip carrier is provided with rounded protrusions in both the chip attach pad region and the surrounding lead regions before second level attachment. The rounded stand-off protrusions are formed from the copper itself of the copper of the leadframe. This may be achieved by punching dimples into one surface of the copper plate of the leadframe before plating to form protrusions on the opposing surface. This method of forming the rounded protrusions simplifies the process of forming stand-offs. The protrusions provide a structure that increases wetting area and allows the use of a larger quantity of solder for increased solder joint thickness and better die paddle solder joint area coverage. As a result of the increased solder joint thickness, second level fatigue life is significantly improved.

Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip to backside metallurgy on the imaging chip. The backside metallurgy of the imaging chip is connected to metallurgy on the active surface of the logic chip using an array of solder bumps in BGA fashion. The interconnection arrangement provides a CSP which matches the space constraints of a cell phone, for example. The arrangement also utilizes minimal wire lengths for reduced noise. Connection of the CSP to a carrier package may be either by conductive through vias or wire bonding. The CSP is such that the imaging chip may readily be mounted across an aperture in the wall of a cell phone, for example, so as to expose the light sensitive pixels on the active surface of said imaging chip to light.

Abstract: A test chip module for testing the integrity of the flip chip solder ball interconnections between chip and substrate. The interconnections are thermally stressed through an array of individual heaters formed in a layer of chip metallurgy to provide a uniform and ubiquitous source of heat. Current is passed through the interconnection to be tested by a current supply circuit using one signal I/O interconnection and the voltage drop across the interconnection to be tested from the current passed therethrough is measured by a voltage measuring circuit connected through another signal I/O interconnection. Stress initiating cracking and degradation at the interconnection creates a measurable change in voltage drop across the interconnection.

Abstract: A chip module having a chip with a flexible multilayer redistribution thin film attached thereto for connection to a substrate. The thin film acts as both a redistribution medium with multiple layers of redistribution metallurgy for chip power and signals and as a compliant medium to relieve stresses caused by thermal expansion mismatch between chip and substrate. Modules comprising chip and thin film may be fabricated at the chip or wafer level. The upper surface of the thin film has an array of pads matching the array of pads on the chip or wafer while the lower surface has pads matching those of the substrate. The multilayer thin film is first formed on a temporary substrate and then the chip is attached to the thin film before release from the temporary substrate. After release, the module is ready for mounting to the second level packaging substrate, such as a chip carrier or PCB. Where the multilayer thin film is formed directly on a wafer, the wafer is then diced to form the module.

Abstract: An optical proximity correction method is provided using a modified merit function based upon yield. Known failure mechanisms related to layout geometries are used to derive yield functions based upon distance values between layout features, such as, edge features. In comparing the edge points on the predicted layout pattern with the corresponding point on the design layout pattern, a yield test is first undertaken before movement of the points on the predicted layout pattern to a position of higher yield. Where yield is acceptable, no further movement is made. Where incremental movement of points results in coming within acceptable proximity before acceptable yield is reached, the point is flagged for further consideration.

Abstract: An electronic package and method of making the electronic package is provided. A layer of dielectric material is positioned on a first surface of a substrate which includes a plurality of conductive contacts. At least one through hole is formed in the layer of dielectric material in alignment with at least one of the plurality of conductive contacts. A conductive material is positioned in the at least one through hole substantially filling the through hole. At least one conductive member is positioned on the conductive material in the through hole and in electrical contact with the conductive material. The electronic package improves field operating life of an assembly which includes a semiconductor chip attached to a second surface of the substrate and a printed wiring board attached to the conductive members.

Abstract: A method and apparatus for interconnecting an electronic module to a substrate through resilient wire conductors in an interposer arrangement. A carrier layer of insulating material with an array of apertures, arranged to align with both the electrical pads on an electronic module and electrical contacts on a substrate, each hold, for example, a resilient wadded wire connector. Each connector extends through the aperture provided and beyond the upper and lower surfaces of the carrier layer. Each resilient wadded wire connector and aperture is encapsulated with a elastomeric insulating material sufficiently deformable so as to allow said resilient wadded wire connector to deform upon application of a normal force from each side tending to depress the connector into its aperture. The encapsulation prevents loss or smear of a wadded wire connector when handling.

Abstract: A method of making an electronic package is described, wherein a substrate is provided with a pattern of conductive pads and a portion of solder positioned on selected ones of the pattern of copper pads. The solder is then reflowed to form partial hemispherically shaped caps on the selected copper pads. The partial hemispherically shaped caps are then coated with a solder flux. A thin semiconductor chip with a pattern of conductive elements, corresponding to partial hemispherically shaped capped pads, is then positioned on the substrate so that the conductive elements of the thin semiconductor chip substantially line up with the partial hemispherically shaped capped pads of the substrate. The solder is then heated to reflow temperature and an electrical couple is formed between the thin semiconductor chip and the substrate.