Abstract: A multilayer chip carrier with increased space for power distribution PTHs and reduced power-related noise. In a multilayer chip carrier with two signal redistribution fanout layers, in addition to signal escape from near-edge signal pads at the first fanout layer, remaining signal pads are moved closer to the edge of the chip footprint. At the voltage layer below the first fanout layer, the remaining signal pads are moved again, closer to the edge of the chip footprint. In the second fanout layer, below the voltage layer, the remaining signal pads escape. The region where signal pads are moved provides increased space for power PTHs.

Abstract: A method and apparatus for interconnecting an electronic module to a substrate through resilient wire conductors in an interposer arrangement. A carrier layer of insulating material with an array of apertures, arranged to align with both the electrical pads on an electronic module and electrical contacts on a substrate, each hold, for example, a resilient wadded wire connector. Each connector extends through the aperture provided and beyond the upper and lower surfaces of the carrier layer. Each resilient wadded wire connector and aperture is encapsulated with a elastomeric insulating material sufficiently deformable so as to allow said resilient wadded wire connector to deform upon application of a normal force from each side tending to depress the connector into its aperture. The encapsulation prevents loss or smear of a wadded wire connector when handling.

Abstract: An electronic fabrication process and structure is provided for attaching discrete passive surface mount devices (SMD) to a substrate in a single step. A liquid noflow resin encapsulant containing flux material is dispensed between presoldered pads on a substrate. The SMD, having a pair of electrical contacts, is pressed into said encapsulant so that the electrical contacts make contact with said presoldered pads. Heat is applied to first activate said flux material and then reflow the solder on said presoldered pads to bond said SMD contacts to said presoldered pads. The reflow temperature is maintained for about 180 seconds during which time the resin solidifies. The resin encapsulant fills the space between substrate and SMD and forms fillets around the solder bonded contacts.

Abstract: A test chip module for testing the integrity of the flip chip solder ball interconnections between chip and substrate. The interconnections are thermally stressed through an array of individual heaters formed in a layer of chip metallurgy to provide a uniform and ubiquitous source of heat. Current is passed through the interconnection to be tested by a current supply circuit using one signal I/O interconnection and the voltage drop across the interconnection to be tested from the current passed therethrough is measured by a voltage measuring circuit connected through another signal I/O interconnection. Stress initiating cracking and degradation at the interconnection creates a measurable change in voltage drop across the interconnection.

Abstract: Solder balls such as, low melt C4 solder balls, undergo volume expansion during reflow, such as may occur during attachment of chip modules to a PCB. Where the solder balls are encapsulated, expansion pressure can cause damage to device integrity. A volume expansion region in the semiconductor chip substrate beneath each of the solder balls accommodated this volume expansion. Air-cushioned diaphgrams, deformable materials and non-wettable surfaces may be used to permit return of the solder during cooling to its original site. A porous medium with voids sufficient to accommodate expansion may also be used.

Abstract: An electronic package includes a substrate having a contact pad thereon, a reformable member such as a solder ball positioned on the contact pad, and an elastic member positioned around the reformable member. The elastic member exerts a girdling force on the reformable member so that when the reformable member is softened, the elastic member elongates the reformable member. This elongation accommodates thermal and other stresses between the foregoing substrate and another substrate joined at the free end of the reformable member. An apparatus is also provided for positioning the elastic member on and around the reformable member.

Abstract: A method and apparatus for interconnecting an electronic module to a substrate through resilient wire conductors in an interposer arrangement. A carrier layer of insulating material with an array of apertures, arranged to align with both the electrical pads on an electronic module and electrical contacts on a substrate, each hold, for example, a resilient wadded wire connector. Each connector extends through the aperture provided and beyond the upper and lower surfaces of the carrier layer. Each resilient wadded wire connector and aperture is encapsulated with a elastomeric insulating material sufficiently deformable so as to allow said resilient wadded wire connector to deform upon application of a normal force from each side tending to depress the connector into its aperture. The encapsulation prevents loss or smear of a wadded wire connector when handling.

Abstract: An electronic package includes a substrate having a contact pad thereon, a reformable member such as a solder ball positioned on the contact pad, and an elastic member positioned around the reformable member. The elastic member exerts a girdling force on the reformable member so that when the reformable member is softened, the elastic member elongates the reformable member. This elongation accommodates thermal and other stresses between the foregoing substrate and another substrate joined at the free end of the reformable member. An apparatus is also provided for positioning the elastic member on and around the reformable member.

Abstract: An electronic package and method of making the electronic package is provided. A layer of dielectric material is positioned on a first surface of a substrate which includes a plurality of conductive contacts. At least one through hole is formed in the layer of dielectric material in alignment with at least one of the plurality of conductive contacts. A conductive material is positioned in the at least one through hole substantially filling the through hole. At least one conductive member is positioned on the conductive material in the through hole and in electrical contact with the conductive material. The electronic package improves field operating life of an assembly which includes a semiconductor chip attached to a second surface of the substrate and a printed wiring board attached to the conductive members.

Abstract: An optical proximity correction method is provided using a modified merit function based upon yield. Known failure mechanisms related to layout geometries are used to derive yield functions based upon distance values between layout features, such as, edge features. In comparing the edge points on the predicted layout pattern with the corresponding point on the design layout pattern, a yield test is first undertaken before movement of the points on the predicted layout pattern to a position of higher yield. Where yield is acceptable, no further movement is made. Where incremental movement of points results in coming within acceptable proximity before acceptable yield is reached, the point is flagged for further consideration.

Abstract: A flexible, compliant layer of a single low modulus material for connecting a chip die directly to a circuit card without encapsulation. The flexible compliant layer provides stress relief caused by CTE thermal mismatch in chip die and circuit card. An array of copper plated vias are formed in said compliant layer with each via terminating on opposing surfaces of the layer in copper pads. Rather than copper, other metals, such as gold or nickel, may also be used. An array of holes may be positioned between said array of vias to provide additional resiliency. The plated vias may be angled with respect to said opposing surfaces to allow additional vertical and horizontal stress relief. Connection of the pads on one surface to high melt C-4 solder balls or columns on a chip die results in solder filled vias. Low melt solder connection of the pads on the other surface to a circuit card allows non-destructive rework of the cards.

Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: The density of plated thru holes in a glass fiber based chip carrier is increased by off-setting holes to positions in which fibers from adjacent holes will not connect. Elongated strip zones or regions having a width approximately the diameter of the holes and running along orthogonal columns and rows of holes, parallel to the direction of fibers, define regions of fibers that can possibly cause shorting between holes. Rotating a conventional X-Y grid pattern of equidistant holes so as to position, for example, alternate holes in one direction between the elongated strip zones running in the opposite direction significantly increases the distance between holes along the elongated strip zones running in each direction. The holes are positioned between elongated strip zones with sufficient clearance to compensate for variations in the linear path of fibers.

Abstract: A flexible chip carrier with contact pads on its upper surface matching those of the chip with said pads conductively connected to land grid array (LGA) pads on its lower surface matching the those of a card or PCB. The chip carrier is provided with a stiffening layer at the LGA interface. The stiffening layer is mechanically attached to the lower surface of the chip carrier. Holes are formed in the stiffening layer to expose the LGA pads. The holes are then filled with a conductive adhesive material. Compliant LGA bumps are applied to the uncured conductive adhesive material which material is then cured.

Abstract: The coating thickness and uniformity of spin-on deposition layers on semiconductor wafers is controlled through the in situ control of the viscosity and homogeneity of the mixture of precursor material and solvent material. The thickness of the deposited material is selected and the viscosity required at a given spin rate for the selected thickness is automatically mixed. Sensing and control apparatus are employed to ensure that the uniformity and viscosity required is maintained before dispensing onto said semiconductor wafer. Low-K dielectric materials of selected thickness are deposited in a uniform coating.

Abstract: A chip package is provided with multiple ways of attaching a heat sink directly to the chip carrier. Corner post are mounted to the surface of the chip carrier. A heat spreading plate, with a surface area substantially the same size as the surface area of the chip carrier, is positioned in thermal contact with the surface of a flip chip, for example. The heat spreading plate has corner cuts to accommodate the corner posts of the chip carrier and notches cut into at least two opposing sides. A heat sink plate with holes extending therethrough at each of its four corners is positioned to allow the corner posts of said chip carrier to extend therethrough. Notches cut in two opposing sides of said heat sink plate are aligned with the notches in said heat spreading plate to create slots for a flexible clip to clamp the assembly together. Alternatively, nuts may also be threaded onto the posts to clamp the assembly together.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: A flexible, compliant layer of a single low modulus material for connecting a chip die directly to a circuit card without encapsulation. The flexible compliant layer provides stress relief caused by CTE thermal mismatch in chip die and circuit card. An array of copper plated vias are formed in said compliant layer with each via terminating on opposing surfaces of the layer in copper pads. Rather than copper, other metals, such as gold or nickel, may also be used. An array of holes may be positioned between said array of vias to provide additional resiliency. The plated vias may be angled with respect to said opposing surfaces to allow additional vertical and horizontal stress relief. Connection of the pads on one surface to high melt C-4 solder balls or columns on a chip die results in solder filled vias. Low melt solder connection of the pads on the other surface to a circuit card allows non-destructive rework of the cards.

Abstract: An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The oxynitride liner is formed by nitriding an initially formed oxide trench liner. The oxynitride trench fill material is formed by directly depositing a high density plasma (HDP) oxide mixture of SiH4 and O2 and adding a controlled amount of NH3 to the plasma mixture. The resultant oxynitride structure is much more resistant to trench fill erosion by wet etch, for example, yet results in minimal stress to the surrounding silicon. To further reduce stress, the nitrogen concentration may be varied by varying the proportion of O2 to NH3 in the plasma mixture so that the nitrogen concentration is maximum at the top of the fill material.

Abstract: The effect upon reliability of thickness variation in a printed wiring board at the LGA compression connection site of an electronic module is reduced. Plated through holes formed in a printed wiring board at the mounting site of an electronic module typically result in upper and lower opposing surface depressions in the board at this mounting site. When compressional force is applied for compressional connection of the module to the printed wiring board through an interposer, the board deforms downwardly reducing the lower depression and increasing the upper depression beyond the compliance of the interposer. Filler material, such as, a bonding material is employed to fill the lower depression eliminating the downward deformation of the printed wiring board into the lower depression. A quantity of filler material sufficient to deform the printed wiring board upwardly under pressure into the upper depression thereby reducing or eliminating same may also be used.