Abstract: A cross-coupled, latch-type clock driver circuit is disclosed which enables the carrying out of level sensitive scan design (LSSD) testing. During normal operation, the circuit functions to prevent a pair of input clock waveforms from overlapping. This is achieved by applying a low state to a control signal input which causes the circuit to perform a latching operation on the input clock waveforms by providing a conductive cross-coupled connection between a first and second NOR Logic elements connected to the input clock waveforms. Then the outputs of the NOR elements will be insured to be nonoverlapping. During the test mode, the input clock waveforms must not be latched, in order for LSSD testing to be carried out. This is achieved by applying a high state to the control signal input, which disables the cross-coupled connection between the NOR logic elements. The circuit then becomes transparent to the input clock waveforms, enabling testing operations to be performed.

Abstract: A digital adder circuit is disclosed which employs non-DC current configurations to significantly reduce power, device count, and delay in performing binary addition. The circuit features a carry propagate transfer FET device whose gate is controlled by a carry propagate control circuit which selectively gates on the transfer FET device at a particular adder bit stage when the carry-in binary bit is to be transferred as the carry-out binary bit, which takes place when the augend input bit and addend input bit at that stage are not equal. The circuit additionally features a carry generate control circuit which is connected to the carry-out node of the FET transfer device, which selectively connects that node to either a drain potential when both inputs are unity or to ground potential when both inputs are zero, thereby efficiently generating the carry-out bit without regard for the state of the carry-in bit.

Abstract: A method is disclosed for fabricating series and/or parallel connected P channel and N channel FET device topologically connected in a CMOS configuration, where the individual FET devices share a common gate sandwiched between them, forming a five terminal device. A new device structure and complementary MOSFET circuitry is also disclosed. The disclosed process produces devices and circuits which overcome the main disadvantage of prior art CMOS transistors, namely excessive area consumption and parasitic effects.

Abstract: A technique is disclosed for condensing the overall size of a PLA circuit and a number of circuit elements involved in carrying out a desired logical OR operation. This is done by preconditioning the product term in the AND array to be grounded and the source of the AND array elements to be connected to the positive potential, polarities which are opposite to those for the balance of the PLA circuit. Therefore, if the particular AND or search array term is selected by means of its gate going positive, the product term line output will rise in potential instead of falling. Since any search array element will have this effect in a column of elements, an OR logical function is performed in what is otherwise the AND array of the PLA. The resultant localized change in polarities achieves a significant reduction in the number of product term columns necessary to carry out an OR logical function in the conventional AND array of a PLA.

Abstract: The high resistance of diffused electrical interconnection lines used for ground return paths in MOS field effect transistor (MOSFET) arrays limits their size and performance. Advantage is taken of the extra interconnection level available from conventional double-layer-polycrystalline silicon (polysilicon) processes to distribute ground potential to arrays, by means of a polycrystalline grid with direct contact to diffused electrodes therein, thus greatly reducing the deleterious effects of ground resistance. The proposed ground grid is integrated into the structure of a MOSFET ROM using a typical double polysilicon process. The first polysilicon level provides the conductive medium for said ground grid and the diffusing doping impurities that form contiguous source electrodes for the array MOSFETs. Gate electrodes thereof and word lines are formed out of the second polysilicon level. Drain electrodes are diffused and contacted by metallized output lines.

Abstract: An FET transmission logic parity circuit is disclosed which determines the odd or even status of register bits using zero DC current transmission logic. The circuit has a first two FET devices which propagate the state of the preceding odd or even nodes and the corresponding register bit is logically a zero. A second pair of FET devices switch the state of the odd or even nodes when the corresponding register bit is logically a one. In this manner, the output nodes are statically conditioned to either a first potential or a second potential, depending upon the register bit states and no DC current flows between the first and second potential.

Abstract: A control unit for a functional processor is disclosed which minimizes programming complexity by eliminating data transfers and the transfer control associated with two level memory systems and which improves flexibility in program task changeovers in pipelined arithmetic architectures. This is accomplished by employing common page addressing for accessing memory address stacks for storing either main memory addresses or address increments, coefficient address stacks for storing coefficient memory addresses or address increments, and microinstruction sequencing control branch stacks for storing branch and loop control parameters. This permits chaining of long sequences of signal processing subroutines without external control and the associated execution time overhead.

Abstract: A low capacitance pad structure is disclosed for testing a semiconductor chip, so as to enable the accurate measurement of rise times and delays in internal logic circuitry. The structure provides a capacitive coupling between the internal logic circuit under test and the capacitance of the probe connected to the input/output pad of the chip. This is achieved by inserting a coupling capacitance between the internal logic circuit and the input/output pad. The coupling capacitance is formed by providing a thin dielectric layer on top of an enlarged plate portion of the conductor line connected to the output of the internal logic circuit under test, so as to capacitively couple voltage swings on the line to a second level plate which forms the electrode to be contacted by the test probe.

Abstract: A DC arc suppression circuit is disclosed for suppressing arcs which occur across a mechanical switch or circuit breaker. Several embodiments are described which employ a bipolar transistor to actively shunt the load current around the mechanical switch when the contacts are opened for a period of time long enough to enable the contacts to be separated by a sufficient distance to prevent arcing. Arcing is prevented when contact bounce occurs upon closure of the contacts, by providing a diode connected in parallel with the base-emitter portion of the circuit which restores the arc suppressing capacity of the circuit almost immediately upon the first closure of the contacts.

Abstract: A self-switched in-band signaling communication apparatus is disclosed which enables the switching of the signaling mode to the data mode on a single transmission line between a data terminal equipment or data communication equipment and the data port of a satellite communications controller, and the opposite switching from the data mode to the signaling mode under a single control bit. Signaling to and from the data port of the satellite communications controller is carried out using conventional dialing pulses at a signaling rate which is independent of the line data rate. The apparatus provides for the multipoint communication between a plurality of data terminal equipments using a unique multipoint turn-around process which provides a mobile bandwidth capability for the communications system.

Abstract: In a TDMA satellite communications system, the data ports at two different earth stations have their data rates synchronized. The origination port stores the last eight-bit byte of data in each 480-bit packet which is transmitted via the satellite. The last byte is compared with each of the 60 bytes of data in the next channel's worth of information received from the terrestrial source. If all of the bytes of data in the new channel's worth of information are identical to the last byte of data transmitted from the originating port, no information is transmitted for this data port in the next TDMA frame. The synchronized data port at the receiving earth station expects a channel's worth of data to be received during the next TDMA frame. The last byte of received data for the recipient data port in the last frame is stored.

Abstract: An asymmetric RAM cell is disclosed which will have a predictable initial storage state when pulsed drain voltage is turned on and yet after the initial turn-on interval, will operate in a symmetric fashion storing either binary ones or zeros. Thus, an initial prestored set of information can be permanently provided in a memory array made up of such cells, by orienting each individual cell at the time of manufacture so as to selectively represent either a binary one or zero. This is illustrated in the FIGURE where the upper cell has a first state by virtue of its orientation and the lower cell has a second, opposite state by virtue of its relative opposite orientation. When the array is turned on, the upper cell will have the opposite binary state from the lower cell. Thereafter, each cell can be respectively switched for storing ones and zeros in a normal RAM operating mode.

Abstract: An encryption system is disclosed which is based on channel destination addresses for a time division multiple access (TDMA) satellite communications network. A superframe initialization vector is transmitted from a master station to all other stations in the network. A plurality of frame initialization vectors is sequentially generated at each station in an encryption engine, from the superframe initialization vector, using a key which is common only to authorized users within the network. Each data channel is initialized with encryption bits produced by exclusive ORing the channel destination address and the frame initialization vector for the frame in which that channel is to be transmitted, and then passing the output of the exclusive OR through the encryption engine using either the same key or a second, different key. These encryption bits are combined with the channel data in an exclusive OR circuit for TDMA transmission via the satellite transponder to the receiving stations.

Abstract: A vertical PNP bipolar transistor structure with Schottky Barrier diode emitter is disclosed which simplifies the structure and process steps for combining a complementary PNP in an NPN integrated circuit and improves the speed and density of the vertical PNP. The PNP emitter is formed with a Schottky contact such that only the PNP base region is contained in the NPN emitter junction structure. The structure uses a separately masked ion/implant for the NPN intrinsic base implant which also forms the PNP collector region so that the PNP base doping profile can intercept the PNP collector profile at a lower concentration resulting in lower collector/base capacitance, lower series collector resistance and higher collector/base breakdown voltage for the PNP. Since the base doping concentration is lower in the structure and the emitter has no sidewall capacitance, the PNP emitter-base capacitance is greatly reduced. These features result in an improved frequency response for the PNP structure.

Abstract: An instruction pipeline for a data processor is disclosed, in which instruction execution is carried out in a sequence of phases which include fetching the instruction from an instruction storage, computing a data storage address from the fetched instruction, accessing the data storage at the computed address to obtain a datum operand, and then carrying out the logical or arithmetic operation on the accessed datum in accordance with the fetched instruction. Branch and stack instructions and return instructions are accommodated by providing a return address stack in the data storage, which stores the next instruction store address to be returned to after a return operation has been completed.

Abstract: A high performance JFET structure and process are disclosed which are compatible with high performance NPN transistors. The high performance JFET is merged in a bipolar/FET device which forms a dense, two level logic function. The JFET can be employed as a switched device or as an active load in a bipolar logic circuit and is formed in the P-type base diffusion of what would otherwise have been an NPN transistor. In the BIFET merged device, the JFET and bipolar transistor share a common base and drain and a common collector and gate in the P-type base region of what would otherwise have been an NPN transistor. Both an NPN type BIFET and an PNP type BIFET are disclosed. The merged JFET and bipolar transistor provide better than a 30% area reduction when compared to their non-merged precursors.

Abstract: In a TDMA satellite communication system, one of the stations is elected the primary station which transmits a reference burst to all other stations to synchronize the local clocks in each station. Each subsidiary station in turn responds by transmitting a local transmit reference burst to enable synchronization of the local transmit clocks. In order to assure that the synchronous operation of the network will continue when the reference station experiences a failure, an alternate reference station is designated in the network which will assume the role of the primary reference station in a baton passing operation in the event that the existing primary reference station must abdicate its reference role. An improved method and apparatus for carrying out the baton passing operation monitors the channel error rate at the reference station and the alternate station.

Abstract: A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode and controls the lifetime of minority carriers in the outside region of the substrate. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through an oxide layer creating a rectifying junction with the semiconductor substrate in the central region.

Abstract: A distributed data processing system is disclosed which has truly distributed control. A plurality of bus interface units (BIU) are interconnected by the distributed system data bus (DSDB) which includes a clock line, a serial command line (CMD), a serial bus allocation line (BAL) and a two byte wide data bus. A central clock connected to the clock line which defines the message frame timing, is the only centralized "control" element in the system. Each BIU may in turn be connected to either one or several data processing units, an I/O port, or a bridge connecting to still another similar bus network.

Abstract: In a multiprocessor system, a controllable cache store interface to a shared disk memory employs a plurality of storage partitions whose access is interleaved in a time domain multiplexed manner on a common bus with the shared disk to enable high speed sharing of the disk storage by all of the processors. The communication between each processor and its corresponding cache memory partition can be overlapped with each other and with accesses between the cache memory and the commonly shared disk memory. The addressable cache memory feature overcomes the latency delay which inherently occurs in seeking the beginning of a region to be accessed on the disk drive mass storage.