Abstract: A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.

Abstract: A method and apparatus for placing a data processor (12) into a low-power mode of operation using a system (10). The system (10) has a processor (12). The processor (12) has access to a bus (18). The bus (18) is coupled to a bus controller (14). The processor (12) sends a broadcast cycle out through the bus (18) when the processor (12) desires to enter a low-power mode of operation. The bus controller (14) determines that the broadcast cycle has been sent on the bus (18). The bus controller (14) waits a predetermined amount of time to process the low-power request and grants permission to the processor (12) to enter the low-power mode via the communication of a transmission termination signal. The processor (12) conditionally drives either logic ones or a tri-state value onto the bus (18) depending upon whether or not the processor (12) has been granted ownership of the bus (18).

Abstract: A data processing system and a method for performing dynamic bus signal termination uses a dynamic bus termination circuitry (14 or 16) with a device (10 or 12). The circuitry is enabled when data is incoming to the device and is disabled when data is outgoing from the device to selectively reduce unwanted signal reflection at the signal end of a bi-directional bus (17). The disabling allows the circuitry to be removed or tristated from any connection with the bus (17) when not needed (i.e., data outgoing) to reduce loading. The disabling of the termination circuitry also aids in reducing the power consumption of the part when either the bus is sitting idle or the part is in a low power mode of operation.

Abstract: A fax system is automated herein by using a modem (10), a computer (12), and an office network which coupled the computer (12) to a plurality of end-user computers (26). A fax is received by the computer (12) through the modem (10). Once the fax is received by the computer (12), a program (14) stores the fax in a computer file (15) in a non-text format. Code (18) converts the non-text format of file (15) to a text format (17) which is read by a pattern recognition program (18). The program (18) determines, from the file (17), a destination of the fax document. The destination can be one or more of a printer (24), a computer in the plurality of computers (26), a default computer, or a default storage location (e.g., disk storage). A log file (19) is kept by computer (12) to record the operations of the computer (12) and receipt and routing information regarding received faxes. The control code (22) coordinates the other programs in memory (13).

Abstract: A vertical transistor (10) has a substrate (12) and a control electrode conductive layer (18), which functions as a control or gate electrode. A sidewall dielectric layer (22) is formed laterally adjacent the control electrode conductive layer (18) and overlying the substrate (12). The conductive layer (18) at least partially surrounds a channel region (30). A vertical conductive region is formed within a device opening wherein a bottom portion of the conductive region is a first current electrode (28). A middle portion of the vertical conductive region is the channel region (30). A top portion of the vertical conductive region is a second current electrode (34). A capacitor (69) is formed overlying and coupled to the vertical transistor (10) in order to form a dynamic random access memory (DRAM) cell.

Abstract: An integrated circuit for use in fiber data distributed interface (FDDI) system has four elastic layer and buffer management (ELM) circuits (12, 14, 16, and 18) coupled through a crossbar switch (20). The crossbar switch (20) allows any of the ELM circuits (12, 14, 16, and 18) to be coupled to any other ELM circuit (12, 14, 16, or 18) or to one of three external buses for FDDI communication. By using a crossbar switch and four ELM devices on a single integrated circuit, FDDI performance is improved while system design is made easier and more flexible than previously possible. Cipher circuitry (22, 24, 26, and 28) is used to scramble and descramble data ingoing and outcoming from the ELM devices. Concentrators, workstations, local area networks (LANs), and the like may incorporate the circuit (10) to improve performance and flexibility.

Abstract: An asynchronous transfer mode (ATM) layer (10) is coupled to one or more physical layers (PHY layer) (12) via a plurality of conductors (14 and 16). The conductors (14 and 16) allow bi-directional communication of ATM data cells between the layers (10 and 12) using the UTOPIA protocol. In addition, the ATM layer (10) and the PHY layer (12) can communicate one or more status bytes and one or more physical identification (PHY ID) bytes to each other prior to the communication of an ATM data cell. This addition of the communication of one or more status bytes and one or more physical identification (PHY ID) bytes is fully compatible with the currently accepted UTOPIA standard and therefore adds new ATM functionality without compromising the widely-accepted UTOPIA standard for ATM.

Abstract: A method for forming a vertical transistor (10) begins by providing a substrate (12). A conductive layer (16) is formed overlying the substrate (12). A first current electrode (26), a second current electrode (30), and a channel region (28) are each formed via one of either selective growth, epitaxial growth, in-situ doping, and/or ion implantation. A gate electrode or control electrode (34) is formed laterally adjacent the channel region (28). A selective/epitaxial growth step is used to connect the conductive layer (16) to the control electrode (34) and forms a control electrode interconnect which is reliable and free from electrical short circuits to the current electrodes (26 and 30). The transistor (10) may be vertically stacked to form compact inverter circuits.

Abstract: A transistor structure (10) has a substrate (12). A first transistor is formed within the substrate (12) having a source region (38), a drain region (30), and a gate electrode formed by a first spacer (26a). A second transistor is formed within the substrate (12) by the source region (38), a drain region (28), and a gate electrode formed by a second spacer (26a). A third transistor is formed overlying the first transistor. The third transistor has a source region (34a), a drain region (34c), a channel region (34b), and a gate electrode formed by the first spacer (26a). A fourth transistor is formed overlying the second transistor. The fourth transistor has a source region (34a), a drain region (34c), a channel region (34b), and a gate electrode formed by the second spacer (26a). The first, second, third, and fourth transistors may be interconnected to form a portion of a compact static random access memory (SRAM) cell.

Abstract: A vertical transistor (10) has a substrate (12) and a control electrode conductive layer (18), which functions as a control or gate electrode. A sidewall dielectric layer (22) is formed laterally adjacent the control electrode conductive layer (18) and overlying the substrate (12). The conductive layer (18) at least partially surrounds a channel region (30). A vertical conductive region is formed within a device opening wherein a bottom portion of the conductive region is a first current electrode (28). A middle portion of the vertical conductive region is the channel region (30). A top portion of the vertical conductive region is a second current electrode (34).

Abstract: A circuit die (10) has circuit modules (12a-12f). Adjacent the circuit modules (12a-12f) is a plurality of redundant circuits regions (14a-14i). Each of the redundant circuit regions (14a-14i) has one or more redundant circuits, such as redundant circuits (16k-16n). The redundant circuits (16k-16n) are identified and oriented via one of a binary, a ternary, or a quaternary circuit identifier comprised of symbols, such as symbols (18, 24, 44, and 56). The symbols (18, 24, 44, and 56) are capable of being lithographically defined in a small surface area and therefore minimize the surface area consumed by the redundant circuits regions (14a-14i). The redundant circuits (16k-16n) are preferably used by focused ion beam (FIB) equipment to replace, repair, or supplement various electrically functional portions of the circuit modules (12a-12f).

Abstract: An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14). An opening (19) is etched through the conductive layer (18), exposing a top portion of conductive layer (14), and forming a sidewall of the conductive layer (18). An selective isotropic etch procedure is used to laterally recess the sidewall of the conductive layer (18). A sidewall spacer (22) is formed adjacent the sidewall of the conductive layer (18). A conductive layer (24) is formed within opening (19) and adjacent the spacer (22) to form an interconnection between conductive layers (24 and 14). The interconnection is self-aligned, and conductive layer (18) is reliably isolated from the interconnect due to the lateral recessed sidewall of the conductive layer (18).

Abstract: A semiconductor memory device is formed having a substrate (12). A diffusion (14) is formed within the substrate (12). A first vertical transistor stack (122) is formed. A second vertical transistor stack (124) is formed. The first vertical transistor stack (122) has a transistor (100) underlying a transistor (104). The second vertical transistor stack (124) has a transistor (102) underlying a transistor (106). The transistors (100 and 104) are connected in series, and the transistors (102 and 106) are connected in series. In a preferred form, transistors (100 and 102) are electrically connected as latch transistors for a semiconductor memory device and transistors (106 and 104) are connected as pass transistors. Two vertical stacks (126 and 128) form electrical interconnections (118 and 120) and resistive devices (134 and 138) for the semiconductor memory device.

Abstract: An output driver circuit has a circuitry portion (70) which is used to generate a Drive-Hi control signal in response to an Output Enable, an optional Precondition signal, and a Data Input signal. A circuit portion (75) ensures that the Drive-Hi control signal is maintained at a voltage which is substantially equal to Vdd when the Output Enable is deactivated. Circuit portion (80) selectively controls the Data Output by driving Vdd onto the Data Output in response to the Drive-Hi control signal being activated. A circuit portion (100) functions to selectively drive the Data Output to a logic zero (ground potential) when a Drive-Lo signal is asserted. Circuit portions (90 and 95) generate the Drive-Lo signal in response to the Output Enable, the optional Precondition signal, and the Data Input signal.

Abstract: A vertically raised transistor (10) is formed having a substrate (12). A conductive plug region (22) is selectively or epitaxially formed to vertically elevate the transistor (10). A first doped region (16a) and a second doped region (16b) are each electrically coupled to the conductive plug region (22) via sidewall contacts. The doped regions (16a and 16b) are used to form current electrode regions (26) within the conductive plug region (22). A channel region separates the current electrodes (26). A gate dielectric layer (28) is formed to overlie the channel region. A conductive layer (30) is formed to overlie the gate dielectric layer (28). Conductive layer (30) forms a gate electrode for the transistor (10). The vertical raised transistor (10) and conductive plug region (22) provide improved device isolation and improved device operation.

Abstract: A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).

Abstract: A method and apparatus used for performing a floating pointing operation has the ability to calculate a square root of a number. An approximation to the inverse of the square root of the number is provided via a step (18). Steps (20 and 22) are used to improve the precision of the inverse of the square root until a predetermined precision is attained. The inverse of the square root, which has a predetermined precision, is used along with the number to generate both an exact floating point value and a small floating point value via steps (24 and 26). The exact and small floating point values are added together in a sum and manipulated to fit into the floating point representation available to the apparatus. The sum is a substantially close approximation to the square root of the number and is either output directly or slightly modified numerically to more accurately represent the square root of the number.

Abstract: A data processing system (10) has a test controller (12). The test controller (12) has a pattern generator (18) for receiving a seed value and generating many pseudo-random values from the seed value. A re-seed and compare circuit (22) monitors the pattern generator (12) and determined when the seed value repeats in the pseudo-random number sequence generated by the generator (18). Once circuit (22) determines that the seed value has repeated the control circuit (20) allows the generator (18) to clock once more and latches a new seed value into the circuit (22). Therefore, the pattern generator through the compare/store function of circuit (22) and the control of circuit (20) is self re-seeding and generates a longer string of pseudo-random numbers with minimal logic.

Abstract: A transistor is formed as either a bipolar transistor (10) or an MOS transistor (11). Each transistor (10 or 11) has a substrate (12). Bipolar transistor (10) has a first current electrode (26) underlying a control electrode (28), and a second current electrode (32) overlying the control electrode (28). MOS transistor (11) has a first current electrode (54) underlying a channel region (56), and a source lightly doped region (58) and a source heavily doped region (60) overlying the channel region (56). A control electrode conductive layer (40) is laterally adjacent a sidewall dielectric layer (48), and sidewall dielectric layer (48) is laterally adjacent channel region (56). Conductive layer (40) functions as a gate electrode for transistor (11). Each of the transistors (10 and 11) is vertically integrated such as in a vertically integrated BiMOS circuit. Transistors (10 and 11) can be electrically isolated by isolation ( 64 and 66).

Abstract: A semiconductor system (10) has a computer (16) coupled to equipment (14) for processing semiconductor wafers. The computer (16) has a CPU (18) for controlling and manipulating computer information, and a memory (16). A portion of the memory (14) stores programs, and is referred to as system code (17). A first portion of the system code (17) is used to store process equipment code (22) which provides control for equipment (14). A second portion of the system code (17) is used to store user function code (20) which provides system security and system/user error reduction. A user input device (28) is used by a human user to interface to the system (10). The user function code (20) prevents the process equipment code (22) from controlling equipment (14) until the human user has entered correct data regarding the wafers being prepared for processing, processing operation information for system (10), and/or like information.