Abstract: A nonvolatile memory device may include a semiconductor substrate, a floating gate electrode on the semiconductor substrate that includes an acute-angled tip at an upper end, and a control gate electrode insulated from the floating gate electrode and facing at least a portion of the floating gate electrode, wherein an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode is smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode.

Abstract: A memory device includes an insulating layer formed over a substrate, a gate formed over the insulating layer, and charge storage elements disposed over the insulating layer. The charge storage elements are separated from each other and are electrically insulated, and each of the charge storage elements is capable of storing at least one charge. The charge storage elements can include fullerenes.

Abstract: A prism sheet includes a transparent base film with first and second surfaces and an optical refracting part with a plurality of prism units on the second surface, wherein the prism units are integral with the transparent base film, each prism unit having a predetermined height and extending along a first direction on the second surface of the transparent base film, wherein each prism unit includes a ridge extending along the first direction, a distance along a normal between the second surface of the transparent base film and the ridge defining the predetermined height of the prism unit, and wherein at least two prism units include ridges inclined at a predetermined angle other than zero with respect to the second surface of the transparent base film, the inclined ridges being unevenly distributed on the second surface of the transparent base film.

Abstract: A monolithic polarization controlled angle diffuser includes a system having a first surface and a second surface, a controlled angle diffuser pattern for providing an angular distribution at an illumination plane, the controlled angle diffuser pattern being on one of the first and second surfaces of the substrate, and a polarizing pattern on one of the first and second surfaces of the substrate. The controlled angle diffuser pattern includes at least two controlled angle diffuser elements. Each controlled angle diffuser element outputs different angular distributions. The polarizing pattern includes at least two polarizing elements. Each polarizing element corresponds to a respective controlled angle diffuser element. The at least two polarizing elements output polarizations are rotated with respect to one another.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.

Abstract: A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.

Abstract: A device for supporting a heating crucible includes a supporting table having an upper surface in which a plurality of holes are formed, and a contamination prevention plate arranged at an entrance of each of the holes of the supporting table and having an opening portion corresponding to the hole and a shield portion extending along an inner wall of the hole.

Abstract: A data driving circuit for driving pixels of a light emitting display to display images with uniform brightness may include a current sink that is capable of receiving, via a data line, a predetermined current from a pixel to enable the data driving circuit to generate a compensation voltage for the pixel. The compensation voltage may compensate for variations among the pixels of the display. Variations among the pixels may result from different electron mobilities and/or threshold voltages of transistors included in the pixels. The value of the predetermined current may be equal to or higher than a value of a minimum current employable by the pixel to emit light of maximum brightness. The maximum brightness of the pixel may correspond to a brightness emitted by the pixel when a highest one of a plurality of set gray scale voltages is applied to the pixel.

Abstract: A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.

Abstract: An electron emission display, including an electron emission unit on a first substrate, a light emission unit on a second substrate, the second substrate affixed to the first substrate and having the electron emission unit and the light emission unit positioned therebetween, and a plurality of spacers disposed between the first and second substrates, wherein each spacer of the plurality of spacers includes a spacer body and at least one coating layer disposed on the spacer body, and wherein each spacer of the plurality of spacers satisfies the proviso that 0.02<?2/?1<100, where ?1 is a specific resistivity of an outer-most coating layer disposed on the spacer body and ?2 is a specific resistivity of an element in direct contact with the outer-most coating layer.

Abstract: A method of manufacturing an anode for a fuel cell including: performing an acid treatment for a carbon-based compound; washing the resultant obtained from the acid treatment with water and then performing a freeze-drying (lyophilization) process; forming a microporous diffusion layer by dispersing the lyophilized resultant in a solvent, coating the dispersed resultant on a porous carbon support, and drying; and forming a catalyst layer on top of the microporous diffusion layer, an anode for a fuel cell obtained according to the method herein, and a fuel cell using the same. An anode having improved efficiency on liquid fuel diffusion can be obtained when using the fuel diffusion layer including the microporous diffusion layer formed of the carbon-based compounds obtained after an acid treatment and a freeze-drying process according to the present invention. A fuel cell having improved performance can be manufactured by using such an anode.

Abstract: A semiconductor device includes an insulating layer on a substrate, a first electrode in the insulating layer having a first upper surface and a second upper surface, a second electrode in the insulating layer spaced apart from the first electrode by a first distance and having a third upper surface and a fourth upper surface, the third upper surface being disposed at a substantially same level as the first upper surface, and the fourth upper surface being disposed at a substantially same level as the second upper surface, a first phase change material pattern covering a part of the first upper surface of the first electrode, and a second phase change material pattern covering a part of the third upper surface of the second electrode, wherein an interface region between the second phase change pattern and the second electrode is spaced apart from an interface region between the first phase change pattern and the first electrode by a second distance greater than the first distance.

Abstract: An optical system for spatially controlling light polarization, and method for manufacturing the same, includes a light source for generating a light beam of a designated wavelength, a beam shaper for splitting the light beam generated from the light source into a plurality of partial beams, and a polarization controller controlling the polarization states of the partial beams. The polarization controller may be formed on the beam shaper or separate from the beam shaper.

Abstract: A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.

Abstract: A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

Abstract: A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.

Abstract: A method and apparatus for tuning a phase of a data clock signal having a different frequency than a main clock signal. The method of tuning includes coarse tuning by receiving the data clock signal, dividing the data clock signal to generate a frequency-divided clock signal having a same frequency as the main clock signal, repeatedly shifting the frequency-divided clock signal to generate multiphase frequency-divided clock signals at a predetermined phase interval, comparing a phase of each of the multiphase frequency-divided clock signals with a phase of the main clock signal, and determining a phase shift amount based on a comparison result, and fine tuning by comparing a phase of a multiphase frequency-divided clock signal corresponding to the phase shift amount with the phase of the main clock signal and adjusting the phase of the data clock signal by a predetermined phase step based on the comparison result.

Abstract: A method of fabricating a semiconductor device having a vertical channel transistor, the method including forming a hard mask pattern on a substrate, forming a preliminary active pillar by etching the substrate using the hard mask pattern as an etch mask, reducing a width of the preliminary active pillar to form an active pillar having a width less than that of the hard mask pattern, forming a lower source/drain region by implanting impurity ions into the substrate adjacent to the active pillar using the hard mask pattern as an ion implantation mask, and forming an upper source/drain region on the active pillar and vertically separated from the lower source/drain region.

Abstract: A supported catalyst for a fuel cell, a method of preparing the same, an electrode for a fuel cell including the supported catalyst, and a fuel cell including the electrode. The supported catalyst for the fuel cell includes a graphite based catalyst carrier; a first catalyst metal particle adsorbed on the surface of the graphite based catalyst carrier, wherein the amount of the first catalyst metal particle is at least 30 wt % based on the supported catalyst; and a second catalyst metal particle impregnated on the surface of the first catalyst metal particle. The supported catalyst for a fuel cell uses a graphite based catalyst carrier to increase durability of the fuel cell. Accordingly, the supported catalyst for the fuel cell provides superior energy density and fuel efficiency, by minimizing the loss of a metal catalyst impregnated in the graphite based catalyst carrier and regulating the amount of the impregnated metal catalyst.

Abstract: A sealing member for a fuel cell includes a pair of belts that include non-gas transmitting layers formed of aromatic polyimide or aluminum and thermoplastic resin layers. The belts are disposed such that the thermoplastic resin layers of the belts face each other, and the thermoplastic resin layers in outer edge portions of the belts are thermally bonded to each other. In a fuel cell, an inner portion of the belts engage the electrolyte membrane.