Abstract: A semiconductor memory device includes first and second edge drivers configured to generate sensing control signals, a memory cell array between first and second edge drivers, and pluralities of unit sense amplifiers detecting data from the memory cell array in response to the sensing control signals.

Abstract: A method for managing a segment threshold includes determining whether a packet has been transmitted to a predetermined terminal, receiving from the predetermined terminal a response message indicating that the predetermined terminal has received the packet without any errors, if a packet has been transmitted to the predetermined terminal, receiving signal intensity data of a current packet transmitted from the predetermined terminal, and adjusting the segment threshold using the received signal intensity data of a current packet, if the response message has been received.

Abstract: A photo spinner apparatus, including a spin coater for coating a plurality of wafers with photoresist, a bake device for hardening the photoresist coated by the spin coater, a developer for developing the photoresist hardened in the bake device, a transfer unit for transferring the plurality of wafers between the developer, the bake device, and the spin coater, and an indexer including a wafer carrier loader to vertically stack a plurality of wafer carriers into which the plurality of wafers transferred by the transfer unit are loaded.

Abstract: A data driving circuit for driving pixels of a light emitting display to display images with uniform brightness may include a gamma voltage unit that generates a plurality of gray scale voltages, a digital-analog converter that selects, as a data signal, one of the plurality of gray scale voltages using first data, a decoder that generates second data using the first data, a current sink, a voltage controller that controls a voltage value of the data signal using the second data and a compensation voltage generated based on the predetermined current, and a switching unit that supplies the data signal to the pixel during any partial period of the complete period elapsing after the first partial period. The current sink receives a predetermined current from the pixel during a first partial period of a complete period for driving the pixel based on the selected gray scale voltage.

Abstract: A method for forming fine patterns of a semiconductor device includes forming an etching film on a substrate having first and second areas, forming first mask patterns on the substrate to have a first pattern density in the first area and a second pattern density in the second area, forming first capping patterns between the first mask patterns, forming second capping patterns between the first mask patterns, such that recess areas are formed between second capping patterns, and such that a first etching pattern is defined to include the first and second capping patterns, forming second mask patterns in the recess areas to include the first and second mask patterns, removing one of the first and second etching patterns, such that a single etching pattern is remaining on the substrate, and etching the etching film using the remaining etching pattern as an etch mask to form etching film patterns.

Abstract: A peripheral light sensor may include at least two transistors connected between an output line and a ground power source, a peripheral light sensing signal corresponding to an intensity of a peripheral light being output through the output line, and at least one color filter over a light receiving section of at least one of the transistors.

Abstract: A data driving circuit for driving pixels of a display to display images with uniform brightness may include a gamma voltage unit that generates gray scale voltages, a digital-analog converter that selects, as a data signal, one of the gray scale voltages using first data, a decoder that generates second data using the first data, a latch for storing the first data and the second data, a current sink that receives a predetermined current from the pixel during a first partial period of a complete period for driving the pixel based on the selected gray scale voltage, a voltage controller that controls a voltage value of the data signal using the second data and a compensation voltage generated based on the predetermined current, and a switching unit that supplies the data signal to the pixel during any partial period of the complete period elapsing after the first partial period.

Abstract: A recessed channel transistor includes a single crystalline silicon substrate having a recessed portion, a bottom surface of the recessed portion including an elevated central portion, a channel doping region in the single crystalline silicon substrate, the channel doping region being under the bottom surface of the recessed portion, a gate structure in the recessed portion, and source/drain regions in the single crystalline silicon substrate at both sides of the recessed portion, the source/drain regions being spaced apart from the bottom surface of the recessed portion.

Abstract: Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.

Abstract: A memory device, including a first ground selection transistor, a first string selection transistor, and first memory cell transistors disposed in series between the first ground selection transistor and the first string selection transistor, wherein the first ground selection transistor and the first memory cell transistors have a same structure. A method of programming the memory device may include programming the ground selection transistor before programming the memory cell.

Abstract: A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.

Abstract: A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to form a patterned seed layer, forming a second dielectric layer on the first patterned dielectric layer and the patterned seed layer, removing portions of the second dielectric layer to form a second patterned dielectric layer, irradiating the patterned seed layer to single-crystallize the patterned seed layer, removing portions of the first patterned dielectric layer and the second patterned dielectric layer such that the single-crystallized seed layer protrudes in the vertical direction with respect to the first and/or the second patterned dielectric layer, and forming a gate electrode in contact with the single-crystal active pattern.

Abstract: A device includes a base substrate, a package including an encapsulated die, the package at least partially embedded in the base substrate, and a wiring portion on the package and extending across at least a portion of the base substrate adjacent to the package.

Abstract: An ion-conductive composite membrane and a method of manufacturing the same, the membrane including phosphate platelets, a silicon compound, and a Keggin-type oxometalate and/or Keggin-type heteropoly acid, wherein the phosphate platelets are three-dimensionally connected to each other via the silicon compound. An electrolyte membrane having an ion-conductive inorganic membrane or an ion-conductive organic/inorganic composite membrane effectively prevents crossover of liquid fuel without the reduction of ion conductivity in a liquid fuel cell, thereby allowing for the production of fuel cells having excellent performance.

Abstract: A data driver including a first digital-to-analog converter configured to select first and second reference voltages depending on upper bits of data and supply the first and the second reference voltages to a first line and a second line, respectively, a second digital-to-analog converter having the first line and the second line to receive the first and the second reference voltages, respectively, a first group of voltage dividing resistors between the first line and the second line and configured to generate a plurality of gray scale voltages, a voltage dividing resistor unit between the first line and the second line, and at least one switch positioned between the voltage dividing resistor unit and one of the first line and the second line, and including a decoder unit configured to control on and off state of the at least one switch depending on lower bits of data.

Abstract: A differential driver includes first and second pull-up resistors respectively connected to first and second output terminals, a plurality of differential-input transistor pairs connected each to the first and second output terminals, current sources connected each to the differential-input transistor pairs, and a slew rate controller adapted to generate differential input signals to be applied each to the differential-input transistor pairs in response to an input signal. The slew rate controller may output the differential input signals simultaneously or sequentially.

Abstract: A polymer battery pack includes a polymer battery, an outer case having a first outer panel and a second outer panel, the outer case enclosing the polymer battery, an electrode tap in electrical communication with the polymer battery and positioned outside the outer case, and a protecting circuit board in electrical communication with the electrode tap and positioned outside the outer case, for enhanced operation and durability.

Abstract: A high voltage regulator may include a first regulating unit, a second regulating unit, and an output node. The first regulating unit regulates the program voltage in a voltage-level-up interval of a program voltage of a memory cell. The second regulating unit regulates the program voltage in a voltage-level-down interval of the program voltage. The output node outputs the regulated program voltage.

Abstract: An emission driver may include a first signal processor adapted to receive a clock signal, an input signal and an inverse input signal, and generate a first output signal, a second signal processor adapted to receive the first output signal, an inverse clock signal and negative feedback signals, and generate a second output signal, a third signal processor adapted to receive the second output signal and the input signal, and generate a third output signal that is an inverse of the second output signal based on the input signal, a fourth signal processor adapted to receive the second output signal, and generate a fourth output signal based on the second output signal, the fourth output signal being an inverse signal of the third output signal, and a fifth signal processor adapted to receive the fourth output signal and output a fifth output signal based on a stored predetermined voltage.

Abstract: A multiblock copolymer includes a polysulfone repeating unit, a sulfonated polysulfone repeating unit, a polydialkylsiloxane repeating unit and an ethylenic unsaturated group at a terminal of the multiblock copolymer. Also provided are a method of preparing the multiblock copolymer, a polymer electrolyte membrane prepared from the multiblock copolymer, a method of preparing the polymer electrolyte membrane, and a fuel cell including the polymer electrolyte membrane. The polymer electrolyte membrane that has a high ionic conductivity and good mechanical properties and minimizes crossover of methanol can be manufactured at low cost. In addition, the structure of the multiblock copolymer can be varied to increase selectivity to a solvent used in a polymer electrolyte membrane.