Abstract: A method of forming a phase change memory device includes forming a core pattern on a substrate, conformally forming a heat conductive layer on the substrate including the core pattern, anisotropically etching the heat conductive layer down to a top surface of the core pattern to form a heat electrode surrounding a sidewall of the core pattern, and forming a phase change memory pattern connected to a top surface of the heat electrode.

Abstract: A flash memory device includes first and second memory cell array blocks and a row decoder coupled to the first memory cell array block and the second memory cell array block. The row decoder includes a block decoder, a single high voltage level shifter that is coupled to both the first and second memory cell array blocks, the single high voltage level shifter configured to provide a block wordline signal of a high voltage to the first and second memory array blocks in response to a block selection signal received from the block decoder, a first pass transistor unit, and a second pass transistor unit.

Abstract: A method of extrusion molding a prism film and a prism film manufactured by the same, the method including providing a molten film, simultaneously forming a prism pattern and an embossed pattern on opposite surfaces of the molten film by passing the molten film through a gap between a prism roll and an emboss roll, and cooling the molten film having the prism pattern and the embossed pattern on opposite surfaces thereof.

Abstract: Disclosed herein are a near-infrared absorbing and color compensation film composition and a film using the film composition. The film composition comprises i) at least one colorant selected from the group consisting of an ionic compound of a near-infrared absorbing cyanine colorant cation having a maximum absorption wavelength in the range of 820 nm to 950 nm and a metal complex colorant anion, an ionic compound of a near-infrared absorbing diimmonium colorant cation having a maximum absorption wavelength in the range of 950 nm to 1,100 nm and a metal complex colorant anion, and an ionic compound of a selective visible light absorbing cyanine colorant cation having a maximum absorption wavelength in the range of 580 nm to 600 nm and a metal complex colorant anion, and ii) an adhesive; and a film using the film composition. When the film composition is used to produce an adhesive film or an antireflective composite film, the price of raw materials used and the number of production steps can be reduced.

Abstract: A method of manufacturing fine patterns includes providing a base portion having a plurality of protruding portions with recess portions therebetween, depositing a material layer on the protruding portions, the material layer including grooves in an upper surface thereof and a plurality of material portions on respective protruding portions, the material portions being in direct contact with adjacent material portions to form contact surfaces therebetween and to overhang corresponding recess portions between the adjacent material portions, and wet etching the material portions through the grooves and contact surfaces to form pattern portions.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: In a non-volatile flash memory device, and a method of fabricating the same, the device includes a semiconductor substrate, a source region and a drain region disposed in the semiconductor substrate to be spaced apart from each other, a tunneling layer pattern, a charge trap layer pattern and a shielding layer pattern, which are sequentially stacked on the semiconductor substrate between the source region and the drain region, adjacent to the source region, a first channel region disposed in the semiconductor substrate below the tunneling layer pattern, a gate insulating layer disposed on the semiconductor substrate between the drain region and the first channel region, a second channel region disposed in the semiconductor substrate below the gate insulating layer, a concentration of the second channel region being different from that of the first channel region, and a gate electrode covering the shielding layer pattern and the gate insulating layer.

Abstract: A reformer burner that includes a fuel supply tube through which a fuel is supplied and a fuel supply chamber that surrounds the fuel supply tube and has a plurality of atomizing holes to atomize a fuel into a combustion chamber of a reformer.

Abstract: A non-volatile memory device includes a memory cell array from which data is read via a plurality of bitlines, which includes a plurality of memory cells having gates respectively connected with a plurality of wordlines, a first type global wordline decoder configured to selectively apply n different voltages, where n is an integer greater than or equal to 3, to a corresponding wordline of the plurality of wordlines in a program mode, and a second type global wordline decoder configured to selectively apply (n?1) different voltages to a corresponding wordline of the plurality of wordlines in the program mode, the second type global wordline decoder having fewer switching elements than the first type global wordline decoder.

Abstract: A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

Abstract: A decoder, a memory system, and a physical position converting method thereof may detect whether an address count of an input address is equal to or greater than a predetermined value. A physical position of a semiconductor memory device corresponding to the input address may be converted if the address count is equal to or greater than the predetermined value.

Abstract: Provided are a semiconductor device and a methods of forming and operating the semiconductor device. The semiconductor device may include active pillars extending from a semiconductor substrate and disposed two dimensionally disposed on the semiconductor substrate, upper interconnections connecting the active pillars along one direction, lower interconnections crossing the upper interconnections and disposed between the active pillars, word lines crossing the upper interconnections and disposed between the active pillars, and data storage patterns disposed between the word lines and the active pillars.

Abstract: The present invention relates to an optical scanner system for scanning of an optical sound track with a beam of light, comprising a light emitter for emission of a light beam, a device for scanning the light beam across an optical sound track, the light beam forming a scanning spot on the optical sound track, an optical detector for detection of the light beam upon interaction of the light beam with the optical sound track and generating an electronic signal representing the sound recorded in the optical sound track.

Abstract: A semiconductor device includes an interlayer insulating film and an inductor. The inductor includes a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof b) at least one element selected from Ti, Hf, or B, and c) N, a metal film pattern formed on the first soft magnetic thin film pattern and a second soft magnetic thin film pattern formed on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N. Edges of the first soft magnetic thin film pattern, edges of the metal film pattern and edges of the second soft magnetic thin film pattern are vertically aligned.

Abstract: An acrylic artificial stone composition includes an acrylic resin, metallized polymer film particles, and an inorganic filler.

Abstract: A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.

Abstract: A motion detection apparatus detecting motion in an image may include a black-and-white signal motion detector, a first color signal motion detector, a second color signal motion detector, and a final motion flag output unit. The motion detection apparatus may output a final motion flag in accordance with whether there is motion in a black-and-white image, whether there is first color motion in a color image, and whether there is second color motion in the color image. The motion detection apparatus may control a threshold value used to determine whether there is motion in an image in the present frame in response to accumulated information about whether there has been motion in the image for a predetermined past frame through to the previous frame.

Abstract: A water recovery system of a direct liquid feed fuel cell and a direct liquid feed fuel cell having the water recovery system. The water recovery system in which water produced at a cathode electrode of a membrane electrode assembly (MEA) is recovered to supply to an anode electrode, the water recovery system includes: a first member located on the cathode electrode and a first supporting plate that supports the first member; and a second member located on the anode electrode and a second supporting plate that supports the second member, wherein the first member and the second member are connected to each other through a slit formed in an electrolyte membrane of the MEA. The direct liquid feed fuel cell having the water recovery system can be used, for example, in a direct methanol fuel cell (DMFC).

Abstract: Provided are a supported catalyst, an electrode including the same, and a fuel cell using the electrode. The supported catalyst includes a carbon-based catalyst support and metal catalyst particles having an average diameter of 3.5 to 5 nm and an amount of 80 to 90 parts by weight based on 100 parts by weight of the supported catalyst in a multi-layer structure adsorbed on a surface of the carbon-based catalyst support. In the supported catalyst of the present invention, as small metal catalyst particles with an average diameter of 3.5 to 5 nm are dispersed with high concentration, high dispersion, and the multi-layer structure, catalytic efficiency is increased. A fuel cell having improved energy density and fuel efficiency characteristics can be prepared using an electrode formed using the supported catalyst.

Abstract: A system on chip (SOC) may include function blocks, and a scan chain in each of the function blocks, the scan chains being adapted to conduct scan test operations in sync with a respective one of a plurality of clock signals having a different phase relative to each other, wherein during an isolation mode, the scan chains test combination circuits of the function blocks, and during an interface mode, the scan chains of adjacent ones of the function blocks test combination circuits between the adjacent ones of the function blocks.