Abstract: An anisotropic conductive film (ACF) composition includes a binder having a thermoplastic resin and a styrene-acrylonitrile (SAN) copolymer resin, a curing composition, and conductive particles.

Abstract: A plasma display panel having a uniformly distributed firing voltage despite of irregular discharge gaps, the plasma display panel including a first substrate, a second substrate facing the first substrate, barrier ribs between the first and second substrates to define discharge cells, address electrodes corresponding to the discharge cells and extending in a first direction, first and second electrodes respectively extending in a second direction crossing the first direction and formed on any one of the first and second substrates, corresponding to the discharge cells, and a dielectric layer covering the first and second electrodes, where the first and second electrodes are spaced apart from each other to form a discharge gap having distances, the dielectric layer having varied permittivities according to distances of the discharge gaps to improve discharge uniformity according to the distances of the discharge gaps.

Abstract: A supported catalyst includes a carbonaceous catalyst support and first metal-second metal alloy catalyst particles adsorbed on the surface of the carbonaceous catalyst support, wherein the difference between a D10 value and a D90 value is in the range of 0.1 to 10 nm, wherein the D10 value is a mean diameter of a randomly selected 10 wt % of the first metal-second metal alloy catalyst particles and the D90 value is a mean diameter of a randomly selected 90 wt % of the alloy catalyst particles. The supported catalyst has excellent membrane efficiency in electrodes for fuel cells due to uniform alloy composition of a catalyst particle and supported catalysts that do not agglomerate.

Abstract: A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs.

Abstract: A semiconductor memory device having a double-patterned memory cell array that includes a plurality of first bit lines spaced apart from each other and having a first pattern, a plurality of second bit lines spaced apart from each other and having a second pattern, the second bit lines being between the first bit lines to define an alternating array of first and second bit lines, the first and second patterns being different from each other, a first main memory cell array defined by a first portion of the alternating array, a second main memory cell array defined by a second portion of the alternating array, bit lines in the first main memory cell array having a substantially same regularity as bit lines in the second main memory cell array, and a dummy array between the first main memory cell array and the second main memory cell array.

Abstract: An organometallic complex for a light emitting layer includes a heterocyclic ligand and a bivalent metal bonded to the heterocyclic ligand, wherein the heterocyclic ligand includes a plurality of linked ring structures that include a total of at least 17 carbon atoms and 1 heteroatom, and the linked ring structures have substantially parallel planes.

Abstract: An organic light emitting display includes a substrate, an OLED including an anode electrode, a cathode electrode and an organic thin film formed between the anode electrode and the cathode electrode, a reflective layer on the OLED, the reflective layer comprising a laminated first material and second material, the first material and the second material having different refractive indices, and an encapsulation layer on the reflective layer, the encapsulation layer comprising at least one of organic thin film and inorganic thin film.

Abstract: A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the substrate and a plurality of pass gates formed over the field regions of the substrate, first self-aligned contact regions formed between adjacent pass gates and access gates, and second self-aligned contact regions formed between adjacent access gates, wherein a width of each of the first self-aligned contact regions is larger than a width of each of the second self-aligned contact regions.

Abstract: An organic light-emitting display device includes a substrate, a first buffer layer and a second buffer layer on the substrate, a thin film transistor on the second buffer layer, an organic light-emitting diode electrically connected with the thin film transistor, and a photo sensor with an intrinsic region on the second buffer layer, wherein the photo sensor is capable of absorbing red light from the organic light-emitting diode and of exhibiting quantum efficiency of from about 50% to about 90%.

Abstract: A layout structure of bit line sense amplifiers for use in a semiconductor memory device includes first and second bit line sense amplifiers arranged to share and be electrically controlled by a first column selection line signal, and each including a plurality of transistors. In this layout structure, each of the plurality of transistors forming the first bit line sense amplifier is arranged so as not to share an active region with any transistors forming the second bit line sense amplifier.

Abstract: Analog capacitors, and methods of fabricating the same, include a lower electrode having a lower conductive layer, a capacitor dielectric layer on the lower conductive layer, and an upper electrode on the capacitor dielectric layer to be opposite to the lower electrode, wherein the upper electrode includes at least an upper conductive layer in contact with the capacitor dielectric layer, wherein the upper conductive layer has a resistivity higher than that of the lower conductive layer.

Abstract: A digital video signal processing apparatus and method for compensating a chrominance (C) signal includes receiving the C signal separated from an input video signal and compensating the C signal in at least one dimension thereof to generate a compensated C signal. A comparator may determine whether a portion of a Y signal in the input video signal is present in the C signal. The compensator may compensate the C signal only when the comparator determines a portion of the Y signal is present in the C signal. The comparator may calculate a variation between current C data of the input video signal and adjacent C data and compare the variation to a threshold value.

Abstract: A driving circuit is capable of displaying various gray level values. The driving circuit generates a data voltage, includes a first decoder adapted to output first decoding signals using upper bits of a digital data signal, a switch unit adapted to select a first reference voltage and a second reference voltage corresponding to first decoding signals, the second reference voltage being lower than the first reference voltage, where two first decoding signals select identical first and second reference voltages, a second decoder adapted to output second decoding signals using lower bits of the digital data signal, and voltage distribution units are adapted to receive and distribute the selected first and second reference voltages, where one voltage distribution unit includes a data voltage generation unit adapted to receive two second decoding signals to generate a data voltage.

Abstract: A sulfur-containing mesoporous carbon that has mesopores with an average diameter of 2 to 10 nm, a method of preparing the same, a catalyst containing the mesoporous carbon as a catalyst support, and a fuel cell using the catalyst in which the sulfur-containing mesoporous carbon has a good affinity for and adhesion to catalyst particles so as to strongly support the catalyst particles due to the sulfur atoms substituting for carbons in an OMC carbon skeleton structure. The growth of metal catalyst particles is prevented when heat-treating the metal catalyst particles. The catalyst using the sulfur-containing mesoporous carbon can be applied to a fuel cell to prevent a reduction in catalytic activity due to increased particle size by an accumulation of catalyst particles. The catalyst containing the sulfur-containing mesoporous carbon as a catalyst support can be used to manufacture a fuel cell having an improved performance.

Abstract: An organic light emitting display and a method of fabricating the same are disclosed. The organic light emitting display may include a transistor on a substrate, a lower electrode on the substrate, the lower electrode being electrically connected to the transistor, an organic light emitting layer on the lower electrode, an upper electrode on the organic light emitting layer, and a buffer layer formed on the upper electrode to modify a predetermined thickness of the upper electrode to be a non-conductive material.

Abstract: An adhesive film composition includes a polyester-based thermoplastic resin, an elastomer resin containing at least one of a hydroxyl group, a carboxyl group, or an epoxy group, an epoxy resin, a phenol curing agent, one or more of a latent catalytic curing agent or a curing catalyst, a silane coupling agent, and a filler.

Abstract: A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region.

Abstract: A semiconductor device includes a device isolation layer on a semiconductor substrate defining an active region in the semiconductor substrate, a low voltage well of a first conductivity type in the active region of the semiconductor substrate, a high voltage impurity region of a second conductivity type in the active region of the semiconductor substrate, the high voltage impurity region positioned in an upper portion of the low voltage well, a high concentration impurity region of the second conductivity type within the high voltage impurity region and spaced apart from the device isolation layer, and a floating impurity region of the first conductivity type between the device isolation layer and the high concentration impurity region, the floating impurity region being a portion of an upper surface of the active region.

Abstract: Example embodiments relate to a semiconductor memory device including a first pad having a probe region and a sensing region, the first pad may be adapted to come in contact with a primary probe, a sensing unit adapted to sense a weak contact of the first pad and the primary probe, the sensing unit may generate an output current in response to a contact point of the primary probe, and a second pad may be adapted to come in contact with a secondary probe to input/output an electric signal. The output current of the sensing unit may be output through the second pad or the secondary probe.

Abstract: A can includes a body receiving an electrode assembly of a battery and a bottom wall protruding downward from the body and having a convex bottom surface such that the bottom wall does not bend toward an inner portion of the can when the body is compressed.