Patents Represented by Attorney Lee & Morse, P.C.

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  • Plasma display device and driving method thereof with an initial driving waveform
    Patent number: 8217859
    Abstract: A method of driving a plasma display device having a first electrode and a second electrode adjacent to one another in a discharge cell, including applying a first waveform at least once to the first electrode, the first waveform including a gradual increase from a first voltage to a second voltage followed by a gradual decrease from a third voltage to a fourth voltage, and applying a second waveform at least once to the first electrode after the first waveform is applied to the first electrode, the second waveform including a gradual increase from a fifth voltage to a sixth voltage followed by a gradual decrease from a seventh voltage to an eighth voltage. The first and second waveforms may be applied to the first electrode after turning on the plasma display device and before a display operation is performed.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: July 10, 2012
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jung-Soo An, Suk-Ki Kim
  • Extreme ultraviolet photomask
    Patent number: 8216748
    Abstract: A method of manufacturing a photomask includes forming an upper layer on a photomask substrate, and patterning the upper layer to form an upper pattern having an inclined sidewall, wherein patterning the upper layer includes anisotropically etching the upper layer using charged particles moving in parallel to a first direction inclined toward a top surface of the upper layer.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ilyong Jang, SangGyun Woo, Sungmin Huh
  • Adhesive composition and optical member
    Patent number: 8217100
    Abstract: An adhesive composition includes an antistatic agent that includes an ionic compound having a melting point of 50° C. or more, and a base polymer having a glass transition temperature of 0° C. or less.
    Type: Grant
    Filed: July 14, 2008
    Date of Patent: July 10, 2012
    Assignee: Cheil Industries, Inc.
    Inventors: Hiroshi Ogawa, Tatsuhiro Suwa, Cheong Hun Song
  • Organic light emitting display device and mother substrate of the same
    Patent number: 8217676
    Abstract: An organic light emitting display device may include a plurality of pixels, a plurality of scan lines for selectively applying a scan signal to the pixels, a plurality of data lines crossing the scan lines for applying a data signal to the respective pixels, a scan driver for applying a scan signal to the scan lines, and at least one first testing unit electrically connected to the scan driver, wherein at least one output line of the first testing unit is electrically connected to the scan driver, and at least one other output line of the first testing unit is electrically disconnected and in an electrically open state.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: July 10, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventor: Won Kyu Kwak
  • Organic light emitting display device and fabricating method thereof
    Patent number: 8212247
    Abstract: An organic light emitting display includes data lines and scan lines intersecting each other, a scan driving unit for supplying a scan signal to the scan lines, a data driving unit for supplying a data signal to the data lines, and pixels defined at intersection points of the data and scan lines, each pixel having an organic light emitting diode, a first TFT with an inverted staggered top gate structure and connected to the organic light emitting diode, the first TFT including an oxide semiconductor as an active layer, and a second TFT with an inverted staggered bottom gate structure and configured to receive the scan signal from the scan lines, the second TFT including an oxide semiconductor as an active layer.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: July 3, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Ki-Nyeng Kang, Jae-Seob Lee, Dong-Un Jin
  • Semiconductor memory device having improved local input/output line precharge scheme
    Patent number: 8213248
    Abstract: A data path circuit of a semiconductor memory device includes: a bit line sense amplifier driven by a first power supply voltage; a local input/output line sense amplifier; a column selecting unit operatively connecting a pair of bit lines connected to the bit line sense amplifier and a pair of local input/output lines connected to the local input/output line sense amplifier in response to a column selection signal; and a local input/output line precharge unit precharging the pair of local input/output lines with a second power supply voltage different from the first power supply voltage during a period for which the column selection signal is in an inactive state.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: July 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Ho Moon, Seong-Jin Jang
  • Adhesive film composition, associated dicing die bonding film, die package, and associated methods
    Patent number: 8211540
    Abstract: An adhesive film composition includes an elastomer resin having one or more of a hydroxy group, a carboxyl group, or an epoxy group, a film-forming resin, a silylated phenolic curing resin, an epoxy resin, a curing accelerator, and a filler.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: July 3, 2012
    Assignee: Cheil Industries, Inc.
    Inventors: Yong Woo Hong, Ki Seong Jung, Wan Jung Kim, Su Mi Im, Sang Jin Kim, Chang Beom Chung
  • Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same
    Patent number: 8211322
    Abstract: A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: July 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Gun Park, Dong-Won Kim, Sung-Young Lee, Yang-Kyu Choi, Chang-Hoon Kim, Ju-Hyun Kim
  • Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
    Patent number: 8207590
    Abstract: A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Sang-Hee Kim
  • Direct liquid feed fuel cell system having double fuel storage
    Patent number: 8206868
    Abstract: A direct liquid feed fuel cell system includes fuel cells including an electrolyte membrane, a plurality of cathode electrodes formed on a first surface of the electrolyte membrane, and anode electrodes formed on a second part of the electrolyte membrane; and a high concentration fuel storage unit and a low concentration fuel storage unit which are separated from each other and store a liquid fuel to be supplied to the fuel cell. The liquid fuel in the low concentration fuel storage unit is supplied to the anode electrodes wherein the liquid fuel in the low concentration fuel storage unit is supplied to the anode electrodes when pressure is applied to the low concentration fuel storage unit, such as when the direct liquid feed fuel cell system having the low concentration fuel storage unit is mounted on an electronic device.
    Type: Grant
    Filed: August 3, 2006
    Date of Patent: June 26, 2012
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jae-yong Lee, Hye-jung Cho, Kyoung Hwan Choi
  • Semiconductor memory device and data read method thereof
    Patent number: 8208327
    Abstract: A semiconductor memory device includes a first bitline pair equalized to a first voltage level by a first equalizer circuit, a second bitline pair equalized to a second voltage level by a second equalizer circuit, an isolation circuit disposed between the first bitline pair and the second bitline pair, the isolation unit configured to electrically connect or isolate the first bitline pair to or from the second bitline pair, and a sense amplifier electrically connected to the second bitline pair, the sense amplifier configured to sense a voltage difference of the second bitline pair, wherein the isolation circuit isolates one of the connections between the first bitline pair and the second bitline pair while the sense amplifier senses the voltage difference of the second bitline pair.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Suk-Soo Pyo
  • Semiconductor memory device and system including the same
    Patent number: 8208335
    Abstract: A semiconductor memory device includes a cell array unit having a plurality of banks each having a plurality of blocks, and a refresh controller configured to set at least one of the blocks as a test block, perform a refresh operation on the blocks except for the test block in a self-refresh operation period, determine a refresh period of the test block, and then set another one of the blocks as the test block.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Hyuk Lee, Jung-Bae Lee, Doo-Gon Kim, Cheol Kim
  • Semiconductor memory device
    Patent number: 8208317
    Abstract: A semiconductor memory device includes a voltage level selection unit configured to output a plurality of voltage level selection signals according to a fuse program in response to a self-refresh command signal and a reference voltage generator configured to receive a reference voltage and output a target reference voltage having a different voltage level depending on a normal mode or a self-refresh mode in response to the voltage level selection signals.
    Type: Grant
    Filed: August 6, 2009
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Seok Kang, Hyung-Dong Kim
  • Paste composition for fabricating electrode, electrode and plasma display panel formed using the same, and associated methods
    Patent number: 8207670
    Abstract: A paste composition for forming an electrode includes: Component A: a conductive powder; Component B: a glass frit having a transmittance of about 65% or less at a wavelength of 550 nm; Component C: an organic binder; and Component D: a solvent.
    Type: Grant
    Filed: May 26, 2009
    Date of Patent: June 26, 2012
    Assignee: Cheil Industries, Inc.
    Inventors: Sang Hee Park, Deok Young Choi, Byung Cheol Lee, Hee In Nam, Hyun Don Kim
  • Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions
    Patent number: 8207040
    Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hoi-Sung Chung, Dong-Suk Shin, Dong-Hyuk Kim, Jung-Shik Heo, Myung-Sun Kim
  • Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads
    Patent number: 8203860
    Abstract: A semiconductor memory device that includes a supply voltage pad, a ground voltage pad, and at least two data input/output pads arranged between the supply voltage pad and the ground voltage pad. The semiconductor memory device has a first pull-up driver that is connected to the second data input/output pad located at a first distance from the supply voltage pad, and a first pull-down driver that is connected to the first data input/output pad located at a second distance from the ground voltage pad.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: June 19, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hae-young Chung, Yang-ki Kim, Seok-woo Choi
  • Flat panel display apparatus
    Patent number: 8203834
    Abstract: A flat panel display apparatus includes a flat display panel including first and second substrates facing each other with a display unit therebetween, the first substrate extending beyond the second substrate, a portion of the first substrate extending beyond the second substrate defining a protruding portion, an outermost edge of the protruding portion defining a protruding edge of the first substrate, and corners of the protruding portion being chamfered, and a bezel surrounding the flat display panel.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: June 19, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Oh-June Kwon, Seung-Yong Song, Kwan-Hee Lee, Young-Seo Choi, Sun-Young Jung, Ji-Hun Ryu, Young-Cheol Joo, Jung-Jun Im, Dong-Su Yee, Chan-Hee Wang, Chan-Kyoung Moon, Jang-Hwan Shin, Dae-Ho Lim, Rog Hur, Kuen-Dong Ha
  • Imaging system with improved image quality and associated methods
    Patent number: 8203644
    Abstract: An image capturing device may include a detector including a plurality of sensing pixels, and an optical system adapted to project a distorted image of an object within a field of view onto the sensing pixels, wherein the optical system expands the image in a center of the field of view and compresses the image in a periphery of the field of view, wherein a first number of sensing pixels required to realize a maximal zoom magnification {circumflex over (Z)} at a minimum resolution of the image capturing device is less than a square of the maximal zoom magnification times a second number of sensing pixels required for the minimum resolution.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: June 19, 2012
    Assignee: Digitaloptics Corporation Europe Limited
    Inventors: Gal Shabtay, Ephraim Goldenberg
  • Electrode terminal and secondary battery including the same
    Patent number: 8202134
    Abstract: An electrode terminal and a secondary battery including the same, the electrode terminal including a screw member, the screw member including a flange on a lower outer peripheral surface thereof; and a coupling member including an upper portion bent so as to surround at least a part of the flange, and a lower portion bent so as to contact an internal surface of a cap assembly and coupled to the cap assembly.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: June 19, 2012
    Assignee: SB LiMotive Co., Ltd.
    Inventors: Jong-Seok Moon, Tatsuya Hashimoto, Yong-Sam Kim, Jeong-Won Oh, Sang-Won Byun
  • Method of fabricating semiconductor device
    Patent number: 8198163
    Abstract: A method of fabricating a semiconductor device including forming a plurality of gate structures on a semiconductor substrate, forming a plurality of impurity regions in the semiconductor substrate at sides of the gate structures, forming a dielectric layer on the semiconductor substrate having the gate structures, forming contact holes by etching the dielectric layer to expose parts of the impurity regions at sides of the gate structures, directly implanting impurity ions into the exposed parts of the impurity regions via the contact holes by using the gate structures as ion implanting masks, wherein the impurity ions prevent impurities doped in the impurity regions from diffusing to channel regions of the gate structures, and forming conductive plugs in the contact holes.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: June 12, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-sung Park, Se-keun Park