Patents Represented by Attorney Lee & Sterba, P.C.
  • Patent number: 6458638
    Abstract: A method for fabricating a SOI semiconductor device including providing a semiconductor substrate; forming a device isolation layer in and on a first surface of the semiconductor substrate to define an active region, including a source/drain region, and an inactive region; forming a first gate electrode on the first surface of the substrate; forming a first insulating layer on the first gate electrode; forming a capacitor, electrically connected to the source/drain region, on the first insulating layer; forming a second insulating layer on the capacitor; forming a third insulating layer on the second surface of the substrate; forming a body contact conductor line, electrically connected to the active region of substrate, on and through the third insulating layer; forming a fourth insulating layer on the body contact conductor line; and forming a bit line on the fourth insulating layer to be electrically connected to the source/drain region of the substrate.
    Type: Grant
    Filed: August 23, 2001
    Date of Patent: October 1, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yun-Gi Kim
  • Patent number: 6455654
    Abstract: A water-soluble polymeric adhesion promoter is represented by the following formula (I): wherein R is a hydrogen atom, a hydroxyl group or a lower alkyl group having 1 to 4 carbon atoms, and m and k are numbers selected such that m/k is in the range from about 1/0.001 to about 1/0.1, and such that that the polymer (I) has a weight average molecular weight of about 3,000 to about 600,000.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: September 24, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se Yong Oh, Chan Eon Park, Sang Min Song
  • Patent number: 6457141
    Abstract: A semiconductor device with embedded memory cells is provided, wherein the device comprises a memory block, a logic block for inputting and outputting data with the memory block and performing specific functions, and an embedded test circuit block for testing the memory block with the signals input from outside the device. The device comprises a plurality of signal terminal groups for sending and receiving signals to and from outside the device to perform a normal operation, a direct access test and a built-in self test.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: September 24, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Chul Kim, Boo-Yung Huh
  • Patent number: 6456122
    Abstract: An input buffer circuit for transforming pseudo differential input signals into full differential output signals wherein, the input buffer circuit includes a pull-up current source, two pull-down current sources, a differential input portion, and a positive feedback portion. The pull-up current source is formed of two PMOS transistors which are always in an “on” state, and provides an electric current. The two pull-down current sources are each formed of an NMOS transistor, which are always in an on state, and sink a pull-up electric current. The differential input portion is formed of two NMOS transistors, and receives an input signal and a reference signal, respectively. The positive feedback portion is formed of two NMOS transistors, and enlarges a voltage difference between two output terminals of the input circuit using positive feedback.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: September 24, 2002
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Joon-young Park, Chang-sik Yoo, Kee-wook Jung, Won-chan Kim
  • Patent number: 6451651
    Abstract: A method of manufacturing a DRAM device comprises forming a bit line interlayer insulating layer over a substrate over which a bit line pattern is formed; planarizing the bit line interlayer insulating layer; forming enlarged grooves exposing a conductive layer of the bit line pattern; forming bit lines; forming a silicon nitride layer over the substrate; forming a silicon nitride pattern having silicon nitride spacers formed on side walls of the enlarged grooves positioned on the conductive layer; forming the bit lines at the enlarged width portions of the bit line pattern; forming storage node contacts, storage nodes, a dielectric layer, and plate electrodes at a cell area; forming a wiring interlayer insulating layer on the substrate; forming metal contact holes; and forming plugs filling the metal contact holes.
    Type: Grant
    Filed: August 20, 2001
    Date of Patent: September 17, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Kyu-Hyun Lee
  • Patent number: 6451663
    Abstract: A method of manufacturing a cylindrical storage node in a semiconductor device, in which loss differences of the cylindrical storage node between the center and the edge of cell areas, caused by an etch-back process of storage node isolation, is minimized, thereby maintaining uniform electrical capacitances over the entire area of a semiconductor wafer.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: September 17, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Gil Choi, Tae Hyuk Ahn, Sang Sup Jeong, Dae Hyuk Chung, Won Jun Lee
  • Patent number: 6452826
    Abstract: A memory module system includes a plurality of memory integrated circuit fixtures, and a memory integrated circuit is attached on each of the memory integrated circuit fixtures by forced contact method. The attached memory integrated circuit can be removed from a corresponding memory integrated circuit fixture. Memory size of memory module systems can be increased, and defective memory integrated circuits can be replaced easily by users.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: September 17, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-Jin Kim, Sung-Ig Kang
  • Patent number: 6451461
    Abstract: A hole transporting compound for organic electroluminescent devices with good thermal stability, which includes 6,6′-bis(9H,9-carbazolyl)-N,N′-disubstituted-3,3′-bicarbazyl as a basic molecular structure, is represented by the following formula I: wherein R is a hydrogen atom, a C1-12 aliphatic alkyl group, a C3-12 branched alkyl group, a C5-12 cyclic alkyl group, or a C4-14 aromatic group, wherein the aromatic group can have one or more alkoxy or amine substituents,
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: September 17, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Ji-Hoon Lee, In-Seo Kee, Sung-Woo Cho, Byung-Hoon Chae
  • Patent number: 6448814
    Abstract: A CMOS buffer circuit for preventing a short circuit current of an output buffer transistor that drives a load including a pre-driving stage, formed of even-numbered inverters connected in series, and the respective inverters are preferably designed to exponentially increase the driving capability; an output buffer driving stage, including a pull-up PMOS driving stage, which outputs a first signal, in response to an output signal of the pre-driving stage and an output signal of the pull-down NMOS driving stage and a pull-down NMOS driving stage, which outputs a second signal, in response to an output signal of the pre-driving stage and an output signal of the pull-up PMOS driving stage; and an output stage, an inverter formed of the pull-up PMOS transistor driven by the first signal and a pull-down NMOS transistor driven by the second signal, which drives a load connected to an output of the inverter.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: September 10, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chang-sik Yoo
  • Patent number: 6436758
    Abstract: A method for forming a storage node contact plug of a dynamic random access memory includes forming insulating layers on an overall surface of a semiconductor substrate having a plurality of buried contact plugs, etching the insulating layers down to a top surface of the buried contact plugs to form first contact holes on the buried contact plugs, forming a photoresist pattern on the insulating layers and the first contact holes, etching the insulating layers to form second contact holes on the second insulating layer, and filling the first and second contact holes with conductive material.
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: August 20, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Soon-Kyou Jang
  • Patent number: 6429472
    Abstract: A split gate type flash memory having an active region that improves an endurance characteristic along with program/erase efficiency, wherein the split gate type flash memory provides for improvement in the endurance characteristic and program/erase efficiency by making the width of an active region in a portion in which a source is overlapped by a floating gate as large as possible.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: August 6, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-ki Kim, Won-il Ryu
  • Patent number: 6429263
    Abstract: A method for fabricating a preform for a plastic optical fiber, having continuous refractive index profile in a radial direction, comprising a firs step of introducing a mixture consisting of at least two substances, each having a different density and refractive index relative to each other, to a cylindrical reactor and polymerizing the mixture in a centrifugal field generated by rotating the reactor; a second step of compensating for a void formed by volume shrinkage from the polymerization in the first step with a mixture consisting of at least two substances, each having a different density and refractive index relative to each other, and polymerizing the mixture in a centrifugal field generated by rotating the reactor, and a third step of repeating the second step until there is no void after polymerization
    Type: Grant
    Filed: January 10, 2001
    Date of Patent: August 6, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Teak Hwang, O Ok Park, Sang Hyuk Im, Duck Jong Suh, Han Sol Cho
  • Patent number: 6424800
    Abstract: A bubbler for use in vaporizing a precursor (source) for thin film deposition includes a vaporizer chamber, the vaporizer chamber having defined therein a source inlet hole, an exhaust hole and a carrier gas inlet hole; a source supply unit connected to the source inlet hole; a plate installed in the vaporizer chamber, the plate being adapted to receive a source entering into the vaporizer chamber; and a heater source installed in the vaporizer chamber, the heater source being adapted to evenly heat the plate.
    Type: Grant
    Filed: September 20, 2000
    Date of Patent: July 23, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Dae-sig Kim
  • Patent number: 6423639
    Abstract: A method of planarizing an insulating layer for a semiconductor device, whereby a semiconductor substrate having a stepped surface due to material layer patterns of various sizes on the surface thereof is prepared. An interlayer insulating layer formed of an organic, low dielectric material covers the stepped surface of the semiconductor substrate. A capping insulating layer is formed on the interlayer insulating layer. A portion of the interlayer insulating layer which is higher than another portion of the interlayer insulating layer is selectively exposed by performing a partial chemical-mechanical polishing process on the capping insulating layer. The exposed portion of the interlayer insulating layer is plasma-processed to a predetermined depth. An entirely planarized interlayer insulating layer is formed by performing a blanket chemical-mechanical polishing process on the plasma processed portion of the interlayer insulating layer and the capping insulating layer.
    Type: Grant
    Filed: June 26, 2000
    Date of Patent: July 23, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seok-ji Hong
  • Patent number: 6423608
    Abstract: A capacitor in a semiconductor integrated circuit, and a method for fabricating the capacitor is disclosed. A method of an embodiment of the invention includes first providing a semiconductor substrate having disposed thereon an interlayer insulating layer. A lower sacrificial insulating layer and an upper etching stopper layer then are sequentially formed on the interlayer insulating layer on the semiconductor substrate. The upper etching stopper layer and the lower sacrificial insulating layer then are sequentially patterned to form a storage electrode hole, and to expose a predetermined portion of the interlayer insulating layer. The method then includes forming an outer cylindrical storage electrode in the storage electrode hole, a conductive liner surrounded by the outer cylindrical storage electrode, and an inner storage electrode surrounded by the conductive liner.
    Type: Grant
    Filed: November 3, 2000
    Date of Patent: July 23, 2002
    Assignee: Samsung Electronics Co. Ltd.
    Inventor: Yun-Ki Kim
  • Patent number: 6422981
    Abstract: A portable stretching apparatus can be deployed in a manner that allows one limb of a user to be restrained on a base unit supporting the user's body while another limb is stretched by pulling a cable at one end to move the other limb attached at the other end of the cable. A cable handling device is arranged so that it can be moved at any position across the width of the stretching device. A measuring device allows a user to measure the relative extent of a stretching exercise.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: July 23, 2002
    Inventor: Daniel E. Riser
  • Patent number: 6421554
    Abstract: A method and device for detecting a lead fault by analyzing a electrocardiogram signal from a telemetric or portable electrocardiogram system using software. In the device for detecting a lead fault, the electrocardiogram signal can be analyzed using software by a microcontroller without an extra microcontroller, so that the size of a telemetric or portable electrocardiogram system can be reduced while also reducing power consumption.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: July 16, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-min Lee, Jong-youn Lee, In-young Kim
  • Patent number: 6416172
    Abstract: An ink-jet head device using a stack of piezoelectric bodies, including a nozzle plate having a nozzle, a manifold portion having a restrictor plate that has a restrictor, piezoelectric bodies stacked in multiple layers and interposed between the nozzle plate and the manifold portion to form a chamber for containing ink, each of the piezoelectric bodies having a cavity at the center, common electrodes and driving electrodes alternately interposed one by one between adjacent piezoelectric bodies, a common lead line and a driving line electrically connected to the common electrodes and driving electrodes, respectively, for supplying a voltage to piezoelectric bodies to cause deformation thereof, and a medium interposed at least between the restrictor plate and a piezoelectric body adjacent to the restrictor plate, and between the nozzle plate and a piezoelectric body adjacent to the nozzle plate, the medium deformed corresponding to deformation of the piezoelectric bodies.
    Type: Grant
    Filed: January 10, 2001
    Date of Patent: July 9, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee Moon Jeong, Suk Han Lee, Yong-soo Oh
  • Patent number: 6395429
    Abstract: A solid polymer electrolyte includes a crosslinking agent, a poly(alkylene glycol) alkyl ether alkyl (meth)acrylate, a lithium salt and a curing initiator. The crosslinking agent includes a compound represented by formula (I): wherein A is oxygen, COO, alkyl of C1-4, or a single bond, R is a 6-membered aliphatic, aromatic or heterocyclic group, Ra, Rb and Rc independently are a linear or branched alkyl group of C1-10, Rd, Re and Rf independently are H or a methyl group, and p, q and r independently are an integer of 1 from 20. The poly(alkylene glycol) alkyl ether alkyl (meth)acrylate is represented by formula (II) wherein R1 and R2 independently are a linear or branched aliphatic or aromatic group of C1-10, R3, X, Y, Z independently are H or a methyl group, and p, q and r independently are an integer from 1 to 20.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: May 28, 2002
    Assignees: Samsung SDI Co., Ltd., Korea Research Institute of Chemical Technology
    Inventors: Yongku Kang, Eun-Kyung Kim, Hee-Jung Kim, Boo-Keun Oh, Jae-Hyun Cho
  • Patent number: 6395450
    Abstract: A positive working photoresist composition includes at least one thermally cross-linkable photoacid generator, a binder polymer, and a solvent in which the binder polymer and photoacid generator are dissolved. The photoacid generator is represented by the general formula (I): wherein X is methanesulfonate, trifluoromethanesulfonate, 4-toluenesulfonate, 10-camphorsulfonate, cyclohexane sulfamate, perfluoro-1-butanesulfonate, perfluorooctanesulfonate, F, Cl, Br, SbF6, BF4, PF4, or AsF6, R1 is hydrogen or methyl, and R2 is alkyl of C1-10 or vinyloxyethyl. The binder polymer represented by the general formula (II): wherein R1 and R2 are different from each other and are selected from the group consisting of acid labile groups, hydrogen, methoxy, ethoxy, n-butoxy and t-butoxy, R3 is hydrogen or alkyl of C1-10, R4 is hydrogen or methyl, 0<o≦1, 0≦p≦0.7, 0≦q≦0.7, and 0≦r≦0.3, wherein p, q and r are not 0 simultaneously.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: May 28, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Geun Park, Chang-Ho Noh, Bong-Seok Moon, Sang-Kyun Lee, Seong-Yun Moon