Abstract: A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0 to WR7 and a plurality of first data lines D0 to D7, a plurality of first dummy cells MCH for storing “1” or “0”, arranged at points of intersection between the word lines WR0 to WR7 and a first dummy data line, and a plurality of second dummy cells MCL for storing “0”, arranged at points of intersection between the word lines WR0 to WR7 and a second dummy data line DD1.

Abstract: A vehicle-mounted information processing apparatus such as a car-navigation system detects that a key switch of the vehicle has been set up at a Lock position (i.e., the engine is stopped). After that, the apparatus performs data reproduction of data files in an order from the oldest, then re-recording the reproduced data files with no change added thereto. Here, the above-described data files, which are stored within a magnetic disk device built in the apparatus, have been not updated for a constant time-period. This re-recording prevents a data loss caused by a thermal decay in the case where the magnetic disk device is mounted inside the vehicle that is likely to have existed under a high-temperature environment for a long time-period.

Abstract: A semiconductor plastic package, more particularly a preferred package structure and method for making a BGA package. A resin sealed BGA package where a supporting frame which fixedly supports semiconductor parts; i.e., an IC chip, a circuit board, or a circuit film, is sealed with resin, using a mold which is composed of an upper mold half and a lower mold half with the lower mold half having a plurality of projections, one at a position corresponding to each of the external terminals. The mold has a divisional structure which has an air vent between the divisional elements thereof.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate, a circuit element formed on one major surface of the semiconductor substrate and constituting an integrated circuit having a plurality of functions or a plurality of characteristics, an internal connection terminal, connected to the integrated circuit, for selecting one of the plurality of functions or one of the characteristics in the integrated circuit, an insulating layer covering the internal connection terminal such that the internal connection terminal is selectively exposed, and an external connection terminal arranged on the insulating layer. One of the plurality of functions or one of the plurality of characteristics is selected by a connection state between the internal connection terminal and the external connection terminal.

Abstract: A power amplifier system has a high frequency power amplifier circuit section employing source-grounded enhancement type n-channel MESFETs for receiving a drain bias voltage and a gate bias voltage of zero volts or positive low potentials supplied from a unipolar power supply, and amplifying a superposed input signal therewith to output an amplified signal indicative of a change in drain currents. An output matching circuit section applies impedance matching to the amplified signal and outputs the resultant signal. A gate bias voltage circuit section supplies a gate bias voltage to the high frequency power amplifier circuit. When a forward direct current gate voltage is applied to a gate terminal with a source terminal coupled to ground, the DC gate voltage becomes greater than or equal to 0.65 volts, the DC gate voltage causing a gate current value per gate width of 100 micrometers to exceed 100 microamperes.

Abstract: Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset.

Abstract: When a sheet feeding/processing control part judges that when a sheet feed request of feeding a sheet by a sheet feed amount is present, an actual cutting position passes a cutter, it divides the requested sheet feed amount into first and second sheet feed amounts. To start, a sheet is fed by the first sheet feed amount, so that an actual cutting position just reaches the cutter. In a state that the sheet stops, a cutter motor is driven to operate the cutter and to cut the sheet at the cutting position. After the sheet is cut, a sheet feed motor is driven to feed the sheet by the second sheet feed amount. Also in feeding the sheet by the second sheet feed amount, a similar process is executed.

Abstract: An electronic money system of a token and value mixed type includes an electronic money card of a type in which a token type for preferentially paying the coin money and paying the bill money when a coin money balance is insufficient for payment, and for recording issuance numbers of bills paid/received in a transaction history in a memory area of the electronic money card. An automatic transaction machine (ATM) reads, from an electronic money card, issuance number of bills for deposit and an issuance number of an invalid bill, and transmits the numbers to a computer of a bank.

Abstract: A vacuum switch comprises a vacuum container, a grounding switch and a load switch disposed in the container, and an external connection conductor disposed in the vacuum container and to be connected electrically inside and outside the vacuum container, and it is characterized in that the grounding switch and the external connection conductor are electrically connected to each other in the vacuum container.

Abstract: A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a ?-hydroxy or ?-hydroxy carboxylic acid structure is partially or entirely converted to a ?-lactone or ?-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

Abstract: Disclosed is a gas turbine power generating system capable of achieving a high output power and a high power generating efficiency under conditions with a small amount of supplied water and less change in design of a gas turbine. A fine water droplet spraying apparatus (11) is disposed in a suction air chamber (22) on the upstream side of an air compressor (2), and a moisture adding apparatus (7) for adding moisture to high pressure air supplied from the compressor (2) is disposed. A regenerator (5) for heating the air to which moisture has been added by using gas turbine exhaust gas as a heat source is also provided. With this configuration, there can be obtain an effect of reducing a power for the compressor (2) and an effect of increasing the output power due to addition of moisture to air (20) for combustion. Further, since the used amount of fuel is reduced by adopting a regenerating cycle, the power generating efficiency is improved.

Abstract: A semiconductor memory device comprises a memory-cell array for storing data, a peripheral circuit for carrying out an operation to read out or write data from or into the memory-cell array, read clock generation circuits (111, 113 and 115) each used for generating a read clock signal to be supplied to the peripheral circuit in the operation to read out data from the memory-cell array, write clock generation circuits (112, 114 and 116) each used for generating a write clock signal to be supplied to the peripheral circuit in the operation to write data into the memory-cell array. Since the pulse widths of the clock signals in read and writes are adjusted individually, margin insufficiencies of the pulse widths can be evaluated and results of the evaluation can be fed back to a design phase for, among other purposes, correction of a layout.

Abstract: A schedule management system includes a schedule data table which stores the schedule data including an identifier of a schedule owner, the time zone, activity and the state of the schedule. A definition data table stores the definition data for determining the relation between the registration and display of the schedule and the schedule and the state in he schedule data. A schedule data registration unit accepts a schedule reservation request, determines whether the schedule registration is permitted or not based on the schedule state of the schedule data existing in the schedule data table and the definition data, and when the schedule registration is permitted, registers the reservation schedule in the schedule data table. A schedule data approval unit accepts a request from the schedule owner for approving/disapproving the schedule and rewrites the schedule state of the corresponding schedule data in the schedule data table.

Abstract: The apparatus and method for producing a substrate having a substrate surface by polishing the substrate surface, which includes a metallic wire. A polishing liquid is supplied a clearance between the substrate surface and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrate surface can be removed from the substrate.

Abstract: The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

Abstract: An information relay device connected between a plurality of logical or physical networks for performing an operation for relay of information between the networks is provided with a transmit/receive processing unit for receiving a general purpose multicast message from one of the plurality of networks and transmitting a multicast message to at least one of the plurality of networks, and a protocol conversion processing unit for converting, in the case where the general purpose multicast message received by the transmit/receive processing unit is a multicast protocol message of a certain level layer, the multicast protocol message of the certain level layer into a multicast protocol message of another level layer.

Abstract: A magnetic field measurement system for canceling an external field is provided, in which plurality of sensing magnetometers (3) for measuring a magnetic field signal in a direction perpendicular to the center axis of a cylindrical magnetic shield (1) are arranged in two dimensions on a plane parallel to the center axis and a reference magnetometer (4) for measuring the external field parallel to the center axis as a reference signal is disposed on a plane perpendicular to the plane parallel to the center axis. The reference signal multiplied by a specified factor is subtracted from a difference between signals from the adjacent sensing magnetometers (3). The magnetic field measurement system allows measurement of an extremely weak magnetic field by efficiently canceling the external field.

Abstract: A data processing apparatus comprising a display device for displaying the data; the first recording device for recording the large volume bit map data; the second recording device recording an index data formed as a two-dimensional image obtained by rendering the large volume bit map data; the first data processing device for reading the large volume bit map data from the first recording device and applying the image processing to the large volume bit map data; the second data processing device for reading the large volume bit map data from the first recording device, forming the two-dimensional image data by rendering the large volume bit map data and transferring the image data to the display device; the third data processing device for transmitting the index data to the display device; and the input device for sending the instructions to the first, second and third data processing devices.

Abstract: The present invention combines sensor portions 22,23 of the device for measuring either current flowing through the line from the power inlet to the power outlet or voltage, or both, and bushings 150, 160 installed at either the power inlet or the power outlet, or both, so as to reduce the size of the gas insulating apparatus. Specifically, the above-mentioned sensor portions 22,23 are installed in the space inside the porcelain tube 15 that constitutes the bushings 150, 160. As this space, it is preferable to use the space on the outer-periphery side of the electric field relaxation member 21 provided inside the porcelain tube 15.

Abstract: In an information recording medium, a first protective layer, a recording film, a second protective layer and a reflective layer are provided on a substrate sequentially from a side where light is irradiated, the first protective layer having a film thickness of 2 nm to 25 nm. 95 atomic % or more of a material of the first protective layer is SiO2—In2O3—SnO2—ZnS, and a ZnS amount in the first protective layer is in the range of 4 mol % to 33 mol %.