Abstract: A projection system includes: a projection device mounted at a member that moves through space and projects an optical image; a detection device that detects relative position assumed in the space by a projection target surface onto which the optical image is projected and the projection device; and a control device that controls projection by the projection device in correspondence to the relative position detected by the detection device.

Abstract: A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.

Abstract: To solve problematic trade-off between a bandwidth and a in-band deviation in an optical signal receiving circuit of a gigabit order that is required to have a wide dynamic range, the optical signal receiving circuit has a current-voltage conversion circuit that receives as an input a current signal outputted from a photoelectric conversion circuit for receiving and converting an optical signal into a current signal and converts it into a voltage signal, and realizes the wide dynamic range by providing the current-voltage conversion circuit with an AGC function and a phase compensation function by MOS transistors and a capacitance. Further, by providing the current-voltage conversion circuit with a second phase compensation function by a MOS transistor and a capacitance, it is made possible for the optical signal receiving circuit to reduce the in-band deviation at the time of minimum gain while securing the bandwidth at the time of maximum gain.

Abstract: The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other.

Abstract: A safety cabinet adaptable for a variation in body height of a worker using the safety cabinet, that is, a safety cabinet which prevents various bacteria from proceeding from the outside of the safety cabinet into a working space of the safety cabinet and prevents bacteria or virus from proceeding from the working space to the outside of the safety cabinet irrespective of a change in opening area of a front opening, is provided. A flow velocity of a clean air supplied into the working space and a flow velocity of the air flowing through the front opening are set at respective velocities predetermined to keep a physical isolation for preventing the contamination in accordance with a size of the front opening. Further, in the safety cabinet, the size of the front opening communicating with the working space under the front surface shutter is adjustable between 200 mm and 300 m.

Abstract: An information processing device having a function for efficiently debugging a parallel processing program by controlling snoop operation is provided. The information processing device is so configured that the following is implemented: the setting for receiving a snoop request from a central processing unit can be set at a snoop controller that controls snoop operation; and as the result of reception of a snoop request, a debug controller can stop multiple central processing units.

Abstract: A roller-type one-way clutch includes an outer race with a pocket with a cam surface, an inner race, and a plurality of rollers disposed on the pocket, engaged in the cam surface, and transmitting torque between the outer race and the inner race. The clutch further includes a cage provided with a cylindrical part and a window provided in the cylindrical part, holding the plurality of rollers, and a spring provided on the pocket, one end of which is latched to the outer race, and the other end of which is configured for preventing movement of the rollers in the axial direction. The spring energizes the rollers in the engagement direction with the cam surface, and the cage is configured so that it is prevented from dropping off in the axial direction.

Abstract: Method of preparing p-type doped ZnO or p-type doped ZnMgO, in which the following successive steps are carried out: a) implantation of O+ oxygen ions in an n-type doped ZnO or an n-type doped ZnMgO; b) first annealing at a temperature less than or equal to 1200° C. under oxygen for a time greater than or equal to 5 minutes; c) implantation of at least one ion of an element chosen among the elements of group I or the elements of group V of the periodic table; d) second annealing. The p-type doped ZnO or ZnMgO obtained by this method may be used in an optoelectronic device such as a light emitting diode.

Abstract: Disclosed is an observable centrifugal apparatus capable of checking in real time a state of a sample during reaction of separation or synthesization in the form of a stable and high-quality image at a high frame rate. An observable centrifugal apparatus A has a rotary disc 4 rotating about a rotary shaft 2, a reactor 6 disposed on the rotary disc and rotating together with the rotary disc while accommodating a sample, and a microscope 8 for observing a state of the sample within the reactor, in which predetermined substances of the sample are separated or synthesized by applying a centrifugal force to the sample within the reactor.

Abstract: A container forming assembly and method includes receiving a parison within a cavity of a mold, enclosing the parison within the mold having a wall with a recess, inflating the parison in the mold to form a blow molded container where the blow molded container has a sidewall, a movable region formed at the recess, and a hinge circumscribing an interface between the sidewall and the movable region, and moving the movable region toward an interior of the blow molded container about the hinge before filling.

Abstract: The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.

Abstract: The mounting height of a semiconductor device is reduced. A wiring substrate has an upper surface with multiple bonding leads formed therein and a lower surface with multiple lands formed therein. This wiring substrate is a multilayer wiring substrate and multiple wiring layers and multiple insulating layers are alternately formed on the upper surface side and on the lower surface side of the core material of the wiring substrate. The bonding leads are formed of part of the uppermost wiring layer and the lands are formed of part of the lowermost wiring layer. The insulating layers include second insulating layers containing fiber and resin and third insulating layers smaller in fiber content than the second insulating layers. The second insulating layers are formed on the upper surface side and on the lower surface side of the core material. The third insulating layers are formed on the upper surface side and on the lower surface side of the core material with the second insulating layers in-between.

Abstract: Providing a solid-state imaging device having a degree of freedom capable of changing which of the pixels functions as a pixel having a photoelectric converter portion bisected in which direction. When a gate electrode 67 is high and a gate electrode 68 is high, photodiodes 31 through 34 are electrically connected each other. When the gate electrode 67 is high and the gate electrode 68 is low, photodiodes 31 and 32, and photodiodes 33 and 34 are electrically connected each other. On the other hand, photodiodes 31 and 33, and photodiodes 32 and 34 are electrically separated. When the gate electrode 67 is low and the gate electrode 68 is high, photodiodes 31 and 32, and photodiodes 33 and 34 are electrically separated. On the other hand, photodiodes 31 and 33, and photodiodes 32 and 34 are electrically connected with each other.

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS?FET for a high side switch and a power MOS?FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract: A surface inspection apparatus capable of acquiring scattered light intensity distribution information for each scattering azimuth angle, and detecting foreign matters and defects with high sensitivity. A concave mirror for condensation and another concave mirror for image formation are used to cope with a broad cubic angle. Since mirrors for condensation and image formation are used, a support for clamping the periphery of a lens is unnecessary, and an effective aperture area does not decrease. A plurality of azimuth-wise detection optical systems is disposed and reflected light at all azimuths can be detected by burying the entire periphery without calling for specific lens polishing. A light signal unification unit sums digital data from a particular system corresponding to a scattering azimuth designated in advance in the systems for improving an S/N ratio.

Abstract: A stapler has a drive train that drives a stapling head toward a base part in a driving stroke and away from the base part in a return stroke. To accommodate thick workpieces to be stapled, without jamming, the drive train includes a coupling constructed so that its effective connection between coupled parts is releasable and so that it loses its effective connection during the driving stroke to prevent jamming.

Abstract: In accordance with an embodiment of the present invention, a blast-resistant panel may include a layer of a pre-cured elastomeric material having a predetermined thickness, a body portion, and a plurality of flanges, each of the plurality of flanges having a substantially equal width and depending away from a same side and at approximately equivalent right angles to the body portion. The blast-resistant panel may also include a plurality of fastener elements for securing the pre-cured elastomeric material layer to a surface of a structure through the plurality of flanges of pre-cured elastomeric material layer.

Abstract: A method and apparatus for extracting a time constant from a time series of values of a signal that varies in accordance with multiple charge carrier trap defects that cause Random Telegraph Noise (RTN), using transition-based assignment of states.

Abstract: A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.

Abstract: A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.