Abstract: A green phosphor represented by Formula (A1-xTbx)a(B1-yMny)bCcOb+1.5(a+c), wherein A includes La, and Yb and/or Gd, B includes at least one kind selected from Mg, Zn, Sc, V, Cr, Co, Ni, Cu, In, Zr, Nb, Ta, Mo, and Sn, C includes at least one selected from Al, B, Ga, Si, P, Ti, Fe, B, and Ge, 0?x?1, 0?y?1, 0.8?a?1.2, 0<b?1.5, 8?c?30, and having a magnetoplumbite type crystal structure.

Abstract: To provide a checking method that utilizes a test bench for a circuit model, which will serve as a fundamental for equivalence checking of a circuit to be newly developed for the fundamental circuit model. In order to check the equivalence of a model to be verified using a sample model a circuit of which has been described in a predetermined language and a test vector generation model for the sample model, a process for writing an output from the sample model test vector generation model into an input FIFO group for each signal of the sample model with the same timing as that of the sample model while the sample model is inputting/outputting a signal from/to the sample model test vector generation model with cycle accuracy and a process for reading data from the input FIFO group with the same operation timing as that of the model to be verified and outputting the data to the model to be verified are carried out.

Abstract: The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.

Abstract: A photomask is disclosed which can suppress deterioration of the depth of focus even in the case where main features are arranged randomly. Sub-features are replaced by a quadrangular sub-feature located inside an external quadrangle which includes as part of its outer periphery the outermost portions of the original sub-features. The sub-feature after the replacement is preferably in a square shape and the length of one side thereof is determined in accordance with the length of the associated external quadrangle. A central position of the sub-feature after the replacement is preferably coincident with the center of the external quadrangle or the center of gravity of the region which includes the original sub-features.

Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.

Abstract: The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip.

Abstract: Traffic between logic LSIs and memory is increasing year by year and there is demand for increase of capacity of communication between them and reduction of power consumption in the communication. Communication distances between LSIs can be reduced by stacking the LSIs. However, in a simple stack of logic LSIs and memory LSIs, it is difficult to ensure heat dissipation to cope with increasing heat densities and ensure transmission characteristics for fast communication with the outside of the stacked package. Also required is a connection topology that improves the performance of communication among the stacked LSIs while ensuring the versatility of the LSIs. An external-communication LSI, a memory LSI, and a logic LSI are stacked in this order in a semiconductor package and are interconnected by through silicon vias.

Abstract: To provide a semiconductor device with improved reliability which includes a metal silicide layer formed by a salicide process. After forming gate electrodes, an n+-type semiconductor region, and a p+-type semiconductor region for a source or drain, a Ni1?xPtx alloy film is formed over a semiconductor substrate. The alloy film reacts with the gate electrodes, the n+-type semiconductor region, and the p+-type semiconductor region by a first heat treatment to form a metal silicide layer in a (Ni1?yPty)2Si phase. At this time, the first heat treatment is performed at a heat treatment temperature where a diffusion coefficient of Ni is larger than that of Pt. Further, the first heat treatment is performed such that a reacted part of the alloy film remains at the metal silicide layer. This results in y>x. Then, after removing the unreacted part of the alloy film, the metal silicide layer is further subjected to a second heat treatment to form a metal silicide layer in a Ni1?yPtySi phase.

Abstract: In case of a task scheduling processing that assigns plural divided execution program tasks to plural processor units, a multiprocessor system using SOI/MOS transistors employs two processes; one process is to determine an order to execute those tasks so as to reduce the program execution time and the other process is to control the system power upon task scheduling so as to control the clock signal frequency and the body-bias voltage to temporarily speed up the operation of a processor unit that processes another task that might affect the processing performance of one object task if there is dependency among those tasks.

Abstract: There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.

Abstract: In a system including a color liquid crystal panel, a liquid crystal display drive control device for driving the panel, and a microprocessor, the display drive control device of the invention lightens the burden imposed on a microprocessor as well as reduces the power consumption of the system.

Abstract: A metal pattern for a high frequency signal is patterned on a flexile substrate, and the flexile substrate is bent in such a way as to form a substantially right angle at a spot corresponding to an end of the metal pattern for the signal. And an end of the metal pattern is fixedly attached to a lead pin for signaling, attached to a stem, for electrical continuity, so as to be in a posture horizontal with each other. Meanwhile, a part of the lead pins attached to the stem, being in such a state as penetrated through respective holes provided in the flexible substrate, is fixedly attached to a part of metal patterns provided on the flexible substrate so as to ensure electrical continuity therebetween.

Abstract: To achieve a stable reading operation in a memory cell having a gain-cell structure, a write transistor is configured, which has a source and a drain that are formed on the insulating layer, a channel formed on the insulating layer and between the source and the drain and made of a semiconductor, and a gate formed on an upper portion of the insulating layer and between the source and the drain and electrically insulated from the channel by a gate insulating film and controlling the potential of the channel. The channel electrically connects the source and the drain on the side surfaces of the source and the drain.

Abstract: To provide a multi-core LSI capable of improving the stability of operation. A multi-core LSI comprises a plurality of CPUs coupled to a first shared bus, one or more modules coupled to a second shared bus, a shared bus controller coupled between the first shared bus and the second shared bus, for arbitrating an access to the module (s) by the CPUs, and a system controller that monitors whether or not a response signal to an access request signal of the CPUs is output from module to be accessed, wherein the system controller outputs a pseudo response signal to the first shared bus via the shared bus controller to terminate the access by the CPU while accessing if the response signal is not output from the module to be accessed after the access request signal is output to the second shared bus from the shared bus controller and before a predetermined time elapses.

Abstract: A power source noise of a semiconductor device having a core cell configuring a logic circuit is reduced. Above the core cell configuring the logic circuit provided on a main surface of a semiconductor substrate are provided a first branch line for a first power source of the core cell, which is electrically connected to a first power source trunk line, and a second branch line for a second power source of the core cell, which is electrically connected to a second power source trunk line. The first and second branch lines are oppositely provided, thereby forming a capacitor between the first and second power sources.

Abstract: A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads.

Abstract: High manufacturing yield is realized and variations in threshold voltage of each MOS transistor in a CMOS.SRAM is compensated. Body bias voltages are applied to wells for MOS transistors of each SRAM memory cell in any active mode of an information holding operation, a write operation and a read operation of an SRAM. The threshold voltages of PMOS and NMOS transistors of the SRAM are first measured. Control information is respectively programmed into control memories according to the results of determination. The levels of the body bias voltages are adjusted based on the programs so that variations in the threshold voltages of the MOS transistors of the CMOS.SRAM are controlled to a predetermined error span. A body bias voltage corresponding to a reverse body bias or an extremely shallow forward body bias is applied to a substrate for the MOS transistors with an operating voltage applied to the source of each MOS transistor.

Abstract: Each of processors has a barrier write register and a barrier read register. Each barrier write register is wired to each barrier read register by a dedicated wiring block. For example, a 1-bit barrier write register of a processor is connected, via the wiring block, to a first bit of each 8-bit barrier read register contained in the processors, and a 1-bit barrier write register of another processor is connected, via a wiring block, to a second bit of each 8-bit barrier read register contained in the processors. For example, a processor writes information to its own barrier write register, thereby notifying synchronization stand-by to the other processors and reads its own barrier read register, thereby recognizing whether the other processors are in synchronization stand-by or not. Therefore, a special dedicated instruction is not required along barrier synchronization processing, and the processing can be made at a high speed.

Abstract: An electronic device includes: a moving part; a projector device provided to the moving part; and a projection control unit that starts projection of an image by the projector device according to the state of the moving part, and the projection control unit starts projection of an image when a first time period has elapsed with the moving part in a predetermined state.

Abstract: A wide-angle lens WL including, in order from an object: a first lens L1 which is a negative meniscus lens having a convex surface facing the object; a second lens L2 which is a positive lens; a third lens L3 which is a negative lens; a fourth lens L4 which is a positive lens; and a fifth lens L5 which is a positive lens, wherein the condition of 0.2<d8/f<0.64 is satisfied, where d8 denotes an air distance between the fourth lens L4 and the fifth lens L5, on an optical axis, upon focusing on an object point at infinity, and f denotes a focal length of the wide-angle lens WL upon focusing on an object point at infinity.