Abstract: Providing a sighting device having a simple structure, being easy to manufacture and free from parallax. A sighting device comprises, in order from a target object side, a positive meniscus lens having a convex surface facing the target object and a negative meniscus lens having a convex surface facing the target object, wherein the surface of said positive meniscus lens that faces away from said target object or the surface of said negative meniscus lens that faces toward said target object is adapted to constitute a semi-transparent reflection surface or a wavelength selective reflection surface, and a point source is provided at a focal point of a catadioptric optical system constituted by said semi-transparent reflection surface or said wavelength selective reflection surface and a refracting surface of the negative meniscus lens having with the convex surface facing said target object, the refracting surface facing away from said target object side.

Abstract: Power switches of circuits at respective stages of a low noise amplifier, demodulators, low-pass filers, variable gain amplifiers, and analog-to-digital converters are controlled to be off by an operation control unit in a non-reception period of an impulse signal. An increase in power consumption due to the adoption of an active filter or a variable gain amplifier is compensated for by a reduction in power consumption through intermittent operations of the circuits at the respective stages according to on and off control of the power switches.

Abstract: The quality of a non-leaded semiconductor device is to be improved. The semiconductor device comprises a sealing body for sealing a semiconductor chip with resin, a tab disposed in the interior of the sealing body, suspension leads for supporting the tab, plural leads having respective to-be-connected surfaces exposed to outer edge portions of a back surface of the sealing body, and plural wires for connecting pads formed on the semiconductor chip and the leads with each other. End portions of the suspending leads positioned in an outer periphery portion of the sealing body are not exposed to the back surface of the sealing body, but are covered with the sealing body. Therefore, stand-off portions of the suspending leads are not formed in resin molding.

Abstract: This invention provides a wireless transmitter circuit for mobile communication apparatus and this circuit can be configured with fewer components and is suitable for downsizing. A single PLL synthesizer serves as both RF frequency band PLL and IF frequency band PLL among three oscillators for TX, RX and IF frequency bands, which have been required in conventional mobile communication apparatus. The number of necessary oscillators occupying a large area within a chip is reduced and the number of components is decreased. Specifically, circuitry is arranged to generate local oscillation signals for RF and IF frequency bands by frequency dividing the output of a VCO of the RF frequency band PLL.

Abstract: A semiconductor device including a pair of stacked semiconductor ICs capable of communicating with each other by wireless. Each IC has: a transmitter circuit operable to send, by wireless, transmit data together with a clock signal deciding a transmission timing, and arranged so that the wireless transmission timing is adjustable; a receiver circuit operable to receive data in synchronization with a clock signal received by wireless, and arranged so that its wireless reception timing is adjustable; and a control circuit operable to perform timing adjustments of the transmitter and receiver circuits based on a result of authentication of data returned by the other IC in response to data transmitted through the transmitter circuit, and received by the receiver circuit. This arrangement for near field communication between stacked semiconductor ICs enables: reduction of the scale of a circuit for communication timing adjustment; and highly accurate adjustment of the communication timing.

Abstract: Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.

Abstract: A spectral image processing method is capable of reducing noise while maintaining necessary information. The spectral image processing method performs processing on a spectral image of a specimen, including a step of normalizing spectra (=spectral brightness curves) of respective pixels constituting the spectral image such that their brightness levels become equal, a step of smoothing the normalized spectra in spatial directions of the respective pixels, and a step of denormalization of multiplying spectra of the respective pixels obtained by the smoothing by either one of brightness levels of the pixels corresponding the spectra and values corresponding to the brightness levels. Consequently, the noise can be reduced while information on brightness distribution on the image is maintained.

Abstract: An outer retainer includes a pair of annular portions facing each other in an axial direction and a plurality of column members connecting the annular portions. A plurality of window portions is formed by the annular portions and the column members, and an outward flange is provided at one side end thereof. The column member between window portions in predetermined positions is cut and the cut portion on the outward flange side is bent radially outward to be an elastic member. Paired cut-away portions are formed in predetermined portions of the outward flange with the elastic member disposed between the paired cut-away portions. In the thus-configured outer retainer, at least three window portions are disposed between the elastic member and the cut-away portion adjacent to the elastic member in the peripheral direction. Column members between paired cut-away portions are bent outward in the radial direction to be enlarged in diameter.

Abstract: A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately.

Abstract: The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance film, a fabricated upper electrode, and a third metal interconnect. The MIM capacitor is realized by forming an interlayer dielectric film comprising silicon oxide so as to cover the first metal interconnect, then forming a first opening in the interlayer dielectric film to a region corresponding to a via hole layer in the interlayer dielectric film just above the first metal interconnect so as not to expose the upper surface of the first metal interconnect, then forming a second opening to the inside of the first opening so as to expose the surface of the first metal interconnect and then forming a capacitance film and a third metal interconnect.

Abstract: A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric film formed over the lower electrode, and an upper electrode formed over the dielectric film. The upper electrode and the dielectric film are each formed with an area larger than the area of the lower electrode so that the whole of the lower electrode is positioned inside the upper electrode and the dielectric film. The reliability and production yield of the capacitor are improved.

Abstract: In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.

Abstract: In a data transfer device which cancells an offset of a differential amplifier for amplifying a received signal and an offset caused by characteristics of a differential transmission line and selects optimum conditions such as pre-emphasis amount of an output pre-emphasis circuit, a first chip (transmission side LSI=transfer engine 210) and a second chip (reception side LSI=multiplexing engine 330) are connected to each other through differential transmission line 430 and a SerDes (serializer) 401 and a SerDes (deserializer) 402 are used to make signal transmission, so that optimum setting conditions of an offset amount of an offset cancellation circuit included in an input buffer amplifier and a pre-emphasis amount of pre-emphasis circuit included in an output buffer are decided in training using a training PRBS generator 560 and a training PRBS comparator 570.

Abstract: The present invention aims to enhance the reliability of a semiconductor device having first through fourth capacitive elements. The first through fourth capacitive elements are disposed over a semiconductor substrate. A series circuit of the first and second capacitive elements and a series circuit of the third and fourth capacitive elements are coupled in parallel between first and second potentials. Lower electrodes of the first and third capacitive elements are respectively formed by a common conductor pattern and coupled to the first potential. Lower electrodes of the second and fourth capacitive elements are respectively formed by a conductor pattern of the same layer as the above conductor pattern and coupled to the second potential. Upper electrodes of the first and second capacitive elements are respectively formed by a common conductor pattern and brought to a floating potential.

Abstract: The detector is reduced in DC power consumption when an input signal is at a low amplitude level. The detector includes first and second input terminals, first and second transistors, and a load element. The first and second input terminals are supplied with complementary input signals reverse to each other in phase. The first input terminal is connected to the first input electrode of the first transistor and the second input electrode of the second transistor. The second input terminal is connected to the second input electrode of the first transistor and the first input electrode of the second transistor. The load element is connected between output electrodes of the transistors and an operating voltage point. A detection voltage resulting from full-wave rectification arises from a circuit node. In the condition where a signal input to the input terminals is at a low amplitude level, the transistors are both in OFF state. Thus, DC power consumption is reduced.

Abstract: A semiconductor chip and a semiconductor device mounting the semiconductor chip capable of increasing a capacitance of a capacitor without reducing the number of signal bumps or power bumps of a package and the number of C4 solder balls of the semiconductor chip, and achieving a stable power supply with suppressing fluctuations of power at a resonance frequency without a limitation in a position to mount a capacitor for lowering noise of a signal transceiving interface block. In the semiconductor device, a via hole is provided to the semiconductor chip, a power-supply electrode connected to the via hole is provided to a back surface of the semiconductor chip, and a capacitor is mounted to the electrode on the back surface. And, a high-resistance material is used for a material of a power-supply via hole inside the semiconductor chip, thereby increasing the resistance and lowering the Q factor.

Abstract: A junction FET having a large gate noise margin is provided. The junction FET comprises an n? layer forming a drift region of the junction FET formed over a main surface of an n+ substrate made of silicon carbide, a p+ layer forming a gate region formed in contact with the n? layer forming the drift region and a gate electrode provided in an upper layer of the n+ substrate. The junction FET further incorporates pn diodes formed over the main surface of the n+ substrate and electrically connecting the p+ layer forming the gate region and the gate electrode.

Abstract: To provide a circuit layout design method that can prevent degradation of the circuit reliability even in highly miniaturized circuit cells. In order to prevent noise from a power supply potential or a reference potential with a large potential difference from affecting a gate electrode and causing a malfunction, a first plug connected to the gate electrode and a second plug to which the power supply potential or the reference potential is supplied are required to be spaced from each other by a distance sufficient for the noise from the power supply potential or the reference potential not to affect the first plug. To this end, among the second plugs placed at equal intervals under the wiring, only the second plug placed at a layout position that is not sufficiently spaced from the first plug is deleted at the time of planar layout design.

Abstract: Devices can use various features to prevent the disconnection of connectors used in medical treatments. For example, a disconnection prevention member can have ends which hold luer connectors such that a male luer connector is prevented from separating from a female luer connector. The member can thus prevent disconnection of luer connectors that are incompletely mated.

Abstract: A spectral image processing system and method of performing robust unmixing on measurement noise. Based on an observed spectral image acquired from a specimen and emission spectral data of each of plural materials contained in the specimen, a contribution of each of the plural materials to the observed spectral image is unmixed by a process, including an evaluating step of evaluating reliability of each component of the observed spectral image based on a predicted spectral image of the observed spectral image, and a reflecting step of reflecting a result of the evaluation in a content of the unmixing.