Abstract: The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Abstract: A one-way clutch of roller type comprising an outer race having pockets provided at an inner surface thereof with cam surfaces, an inner race spaced inwardly from the outer race, a plurality of rollers disposed in the pockets and adapted to transmit torque between the outer race and the inner race, a cage having a cylindrical portion, a flange portion and windows to hold the plurality of rollers and each having a circumferential width smaller than a diameter of the roller, and springs each having one end locked to the outer race to bias the roller toward, and wherein the cage is rotatable relative to the outer race and includes staking portions formed on an end face of the cylindrical portion opposite to the flange portion and adapted to prevent the cage from being dislodged in an axial direction.

Abstract: A data processor that includes a central processing unit, a graphic controller, a display controller, an image recognizing module, a memory controller and image data input units is disclosed. The components can be formed on a single semiconductor substrate. The display controller can perform display control on image data. The image data input unit stores the image data into a first area in the external memory. The image recognizing module or central processing unit executes an image process on the image data in the first area or image data in a second area, and stores a result of the process in a third area of the external memory.

Abstract: To provide a plasma display panel of improving a discharge time-lag. A plasma display panel of the present invention is characterized in that it comprises a pair of substrate assemblies opposed to each other sandwiching discharge spaces formed to seal a discharge gas therein, wherein one of the pair of substrate assemblies comprises: display electrodes arranged on a substrate; a dielectric layer for covering the display electrodes; and a protective layer for covering the dielectric layer, and the protective layer is configured so that a plurality of MgO single crystals are adhered to an MgO film in such a manner that crystal orientations of the plurality of MgO single crystals are aligned in one direction.

Abstract: A step is provided between a substrate surface of a select gate and a substrate surface of a memory gate. When the substrate surface of the select gate is lower than the substrate surface of the memory gate, electrons in a channel upon writing obliquely flow in the step portion. Even if the electrons obtain the energy required for passing a barrier during the oblique flow, the electron injection does not occur because electrons are away from the substrate surface. The injection can occur only on a drain region side from a position where the electrons reach the substrate surface. As a result, the injection of the electrons into a gap region is suppressed, so that the electron distribution comes close to the hole distribution. Therefore, variation in a threshold value upon information retention is suppressed, and information-retaining characteristics of a memory cell are improved.

Abstract: Using, as a detector, a CCD detector having a CCD element to which a scintillator is closely fixed, a backscattered or scanning transmission image is obtained by the following method. The detector is disposed directly under an objective lens to obtain the backscattered electron image. When one point of a specimen is irradiated with an electron beam, backscattered or transmission electrons generated from the specimen collide with the scintillator to form a luminescent pattern. This pattern is detected by the CCD detector, and stored in a memory. This processing is sequentially repeated for each irradiation position to obtain all the patterns in an electron beam scanning range. Arithmetic processing is performed on each pattern to convert it into an image. Usually, image data for one pixel is calculated from one pattern. By sequentially repeating this, a backscattered or transmission electron image in the electronic beam scanning range can be obtained.

Abstract: It is an object of the present invention to provide a plasma display panel with an improved panel structure for improving a discharge time-lag and, more particularly, to provide a plasma display panel with a new protective film structure, the plasma display panel having uniformed panel properties suitable for mass production with a high yield.

Abstract: Exhaust capture and containment are enhanced by means of automatic or manual side skirts, a sensitive breach detector based on interference effects, a combination of vertical and horizontal edge jets, and/or corner jets that are directed to the center diagonally from corners. Associated control functions are described.

Abstract: A cryptographic method and systems using a keyed one-way function. A sending device uses the keyed one-way function to authenticate one or more receiving devices prerequisite to communication. A multidimensional hypercube is generated, from which is formed a multidimensional vector by randomly selecting one corner of the multidimensional hypercube. The keyed one-way function is computed using the multidimensional vector.

Abstract: A lubrication controlling method for a starting clutch including a wet type multi-plate clutch disposed between a transmission and an engine of a vehicle and adapted to transmit a power, the method including always supplying lubricant oil during an operation of the wet type multi-plate clutch, continuously changing a flow amount of the lubricant oil in accordance with a condition of the wet type multi-plate clutch, and controlling the amount of the lubricant oil so that a supplied amount of the lubricant oil during an idle rotation of the wet type multi-plate clutch is greater than a supplied amount of the lubricant oil during the complete engagement of the wet type multi-plate clutch.

Abstract: A zoom lens is provided with comprising a plurality of lens groups including, in order from an object, a first lens group G1 having positive refractive power, a second lens group G2 having negative refractive power, a third lens group G3, and a fourth lens group G4, upon zooming from a wide-angle end state W to a telephoto end state T, a distance between the first lens group G1 and the second lens group G2 increasing, a distance between the second lens group G2 and the third lens group G3 decreasing, and the most image side lens group among the plurality of lens groups moving along an optical axis with a trajectory having convex shape facing the object side, and given conditional expressions being satisfied, thereby excellently correcting chromatic aberration in a farther away shooting range, capable of having excellent optical performance with being compact.

Abstract: A one-way clutch of roller type comprises an outer race having pockets provided at their inner faces with cam surfaces, an inner race spaced inwardly from the outer race in a radial direction and rotatably disposed in concentric with the outer race and having an annular outer peripheral track surface, a plurality of rollers disposed in the pockets and adapted to transmit torque between the outer race and the inner race when engaged by the cam surfaces, and accordion springs disposed in the pockets and adapted to bias the rollers toward engagement directions with respect to the cam surface, and is characterized in that one ends of the accordion springs are secured to axial end faces of the outer race.

Abstract: To provide a technique capable of improving the reliability of a semiconductor element and its product yield by reducing the variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate 1, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310° C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)2Si phase. Subsequently, after removing the unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of the first thermal treatment is set to 10° C./s or more (for example, 30 to 250° C.

Abstract: In a zoom lens ZL1 having a plurality of lens groups G1 to G2 which are disposed in order from an object, where a refractive index average value of the lens components which constitute the zoom lens ZL1 is defined as ndav and a refractive index average value of the lens components which constitute the first lens group G1 which is disposed to closest to the object among the plurality of lens groups G1 to G2 is defined as ndGlav, the zoom lens ZL1 is constituted to satisfy the conditional expression ndav?1.80 and to satisfy the conditional expression ndGlav?1.85.

Abstract: In a wet-type multi-plate clutch comprising an externally-toothed plate and an internally-toothed plate each of which is formed by adhering a friction material on a core plate and in which torque is transmitted by engaging the externally-toothed plate and the internally-toothed plate, the friction materials are adhered on opposed surfaces of the externally-toothed plate and the internally-toothed plate which are opposed to each other.

Abstract: A surface defect data display and management system comprises a risk score calculation unit for calculating the magnitude of an influence a surface defect on a wafer detected by a wafer inspection system or review system has upon a reduction in the yield of a final product as a risk score of the surface defect based on a defect size of the surface defect on the wafer and a pattern concentration obtained from design data of a pattern figure nearby a location corresponding to the position of the surface defect, and a correlation graph and defect image display unit for preparing a correlation graph showing the correlation between the defect size and the risk score of each defect, displaying the prepared correlation graph on the display apparatus and displaying additionally a defect image list of one or more defects selected by using the correlation graph.

Abstract: A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

Abstract: A memory card has a plurality of non-volatile memories and a main controller for controlling the operation of the non-volatile memories. The main controller performs an access control to the non-volatile memories in response to an external access instruction, and an alternate control for alternating an access error-related storage area of the non-volatile memory with other storage area. In the access control, the speeding up of the data transfer between flash memories is achieved by causing the plurality of non-volatile memories to parallel access operate. In the alternation control, the storage areas is made alternative for each non-volatile memory in which an access error occurs.

Abstract: A high-speed and low-voltage DRAM memory cell capable of operating at 1 V or less and an array peripheral circuit are provided. A DRAM cell is comprised of a memory cell transistor and planar capacitor which utilize a FD-SOI MOST structure. Since there is no junction leakage current, loss of stored charge is eliminated, and the low-voltage operation can be realized. Further, a gate and a well in a cross-coupled type sense amplifier using FD-SOI MOSTs are connected. By this means, a threshold value dynamically changes and high-speed sensing operation can be realized.

Abstract: The present invention provide an image display device including a level shift circuit not requiring a clock signal nor a control signal from the outside and operating at a low voltage and ensuring a high yield. The level shift circuit comprises a pair of transistors each having a source electrode connected to a power, a gate electrode and a drain electrode (the gate electrode and the drain electrode of one of the transistors being connected with the drain electrode and the gate electrode of the other (cross coupling)); and transistors each having an a source electrode connected to a low voltage source or the ground, a drain electrode connected to a connection point for the cross coupling, and a gate electrode, one of the gate electrodes being connected to an input signal and the other being connected to an input inversion signal.