Abstract: A feed device for fastening elements with low length-to-diameter ratio has a hollow clamp into which individual fastening elements are inserted through a feed channel. The clamp has an internal pocket for pre-positioning a fastening element. A piston moves through the feed channel to engage the fastening element and to open the clamp to release the fastening element for further movement by the piston.

Abstract: An immersion microscope objective lens includes, in the following order from an object side to an image side, a first lens group having positive refractive power as a whole, including a first lens component composed of a first meniscus lens and a second meniscus lens cemented to each other with their concave surfaces facing the object side, a second lens composed of a single lens having positive refractive power and a third lens composed of a negative lens and a positive lens cemented to each other, a second lens group having positive refractive power as a whole, including a fourth lens component composed of a negative lens and a positive lens cemented to each other, and a third lens group having a negative refractive power as a whole. Predetermined conditions are satisfied.

Abstract: Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate with each other is taken into account and a correction is made beforehand to the pitch of the inner leads. Likewise, a change in lead pitch which occurs at the time of connecting electrodes on a liquid crystal substrate and outer leads on the film substrate with each other is taken into account and a correction is made beforehand to the pitch of the outer leads.

Abstract: A memory cell includes a selective gate and a memory gate arranged on one side surface of the selective gate. The memory gate includes one part formed on one side surface of the selective gate and the other part electrically isolated from the selective gate and a p-well through an ONO layer formed below the memory gate. A sidewall-shaped silicon oxide is formed on side surfaces of the selective gate, and a sidewall-shaped silicon dioxide layer and a silicon dioxide layer are formed on side surfaces of the memory gate. The ONO layer formed below the memory gate is terminated below the silicon oxide, and prevents generation of a low breakdown voltage region in the silicon oxide near an end of the memory gate during deposition of the silicon dioxide layer.

Abstract: An elastic shaft joint is constituted of a joint member, a shaft member being fitted in a shaft of the joint member, and an elastic bush having a cylindrical inner sleeve fitted and fixed on the joint member, a cylindrical elastic member fixed on an outside surface of the inner sleeve, and a cylindrical outer sleeve fixed on an outside surface of the elastic member, for elastic torque transmission between the joint member and the shaft member, wherein the outer sleeve is fixed on the shaft member.

Abstract: The invention concerns a method for secure storage of a piece of so-called sensitive data, for example an encryption key, in a memory (M) of an embedded microchip system, particularly a smart card (CP). The memory (M) comprises two physically distinct storage devices (1, 2), for example a permanent memory of the “ROM” type (1), and a second, re-programmable memory of the “EEPROM” type (2). The piece of sensitive data is divided into at least two parts (d, d?), in a given logical configuration, each of these parts being stored in one of the distinct storage devices (1, 2). An additional piece of verification data, a checksum or hash data, can also be stored in the first storage device (1), at the same time as the first sensitive data part (d). The invention also concerns an embedded microchip system, particularly a smart card (CP).

Abstract: There is achieved a high-integrated and high-speed nonvolatile memory which can stabilize an operation of a phase-change memory for a short operation cycle time. A latch is provided in a write driver. A change to a high-resistance state of a phase-change element is performed per column cycle by a write-enable signal, and a change to a low-resistance state thereof is performed after a pre-charge command is inputted and concurrently with deactivation of a pre-charge signal. Thereby, a write time to a memory cell in which phase-change resistance is changed to a low-resistance state, and a period from a write operation for changing the phase-change resistance to a high-resistance state to a read operation to the above memory cell can be lengthened without extending the column cycle time, so that the stable write operation is achieved.

Abstract: The invention relates to a method for managing data transmissions via an internet network (RI) between calling (Aa) and called (Ab) subscribers and also an associated smart card. A card (2a) cooperates with a terminal (1a) and has client/webserver (SWEB), CGI and proxy (27a) functions. The proxy function is used for the signaling channels (CS) and data channels (CD). The terminal (1a) and the card (2a) include specific communication protocol layers that make it possible to establish sessions for bidirectional transmission between them and/or with the internet network (RI). The smart card (2a) stores applications associated with protocols for listing (900a) and for locating subscribers (901a), as well as subscriber profiles (903a). It plays the role of a proxy in the signaling channel (CS) and/or data channel (CD).

Abstract: Disclosed herewith is a semiconductor data processing device that realizes low power consumption at the standby time and at the operation time, as well as speeds up the interfacing operation. The semiconductor data processing device can connect a non-volatile storage device to a general-purpose bus of a host system. The data processing device enters the active or standby state in response to the state of the general-purpose bus. In the standby state, the data processing device stops the internal clock signal and applies a substrate bias voltage to each object so as to suppress the potential sub-threshold leak current therefrom. This bias voltage is also applied to the central processing unit and the rewritable non-volatile memory for storing a control program to be executed by the central processing unit. The central processing unit processes data in units of n bits or below when the interface controller and the data transfer controller input/output parallel data in units of 2n bits.

Abstract: The object is to provide an optical system with a wavelength selecting device. According to one aspect of the present invention, an optical system with a wavelength selecting device includes, in order from an object along an optical axis, an objective optical system composed of optical elements having refractive power and an aperture stop, a no-power optical group composed of optical elements having no refractive power, and an imaging device. The no-power optical group includes the wavelength selecting device for making short wavelength light be selectively substantially non-transparent. The wavelength selecting device preferably satisfies the predetermined conditional expressions.

Abstract: An anti-reflection coating is formed on an optical surface of an optical member for reducing the amount of light rays reflected from the optical surface. For light rays in a wavelength range from 400 nm to 700 nm, the anti-reflection coating has a reflectance of 0.5% or less if the light rays are incident on the optical surface at angles within a range from 0 to 25 degrees, and it has a reflectance of 3.5% or less if the light rays are incident at angles within a range from above 25 degrees to 60 degrees.

Abstract: A diffractive optical element 1 comprises a first element 10 and a second element 20, whose materials are different from each other. These elements are bonded to each other, with a diffraction grating 30 created on the boundary surface between the first element 10 and the second element 20, and in the diffractive optical element 1, at least the second element 20 is made from a photo-setting resin, which is set by light rays incident through the first element 10. The diffractive optical element 1 is set in a predetermined range of values including values that make the transmittance T1 of the first element 10 and the transmittance T2 of the second element 20 equal to each other for the light rays.

Abstract: An impact energy absorbing member in which a plurality of impact absorbing plates are arranged with predetermined intervals along a direction in which a collapse stroke progresses is provided on either one of a vehicle side bracket or a column side bracket slidably fitted to the vehicle side bracket. On the other bracket, there is provided a breaking member for sequentially breaking said plurality of impact absorbing plates as the collapse stroke progresses. With this structure, the impact energy absorbing member is sequentially broken by the breaking member as the collapse stroke progresses upon secondary collision, so that impact energy is absorbed.

Abstract: A spectroscope capable of suppressing the dimension and the cost with avoiding a problem caused by polarization dependency of the diffraction grating. The spectroscope includes a polarizing beam splitter plate 3 that divides the light from an input fiber 1 into a first and a second optical paths and polarizes each light of each optical path having different direction of polarization with each other, a Fresnel rhomb half wave plate 5 that arranges the direction of polarization of the light in the first optical path into that in the second optical path and a plane mirror 4 that deflects the second optical path such that at least a portion of an area where the light through the first optical path is incident on the diffraction grating 6 and an area where the light through the second optical path is incident on the diffraction grating overlap each other.

Abstract: To provide a zoom lens system with a vibration reduction having a long back focal length suitable for a digital SLR camera, a high zoom ratio, and a wide angle of view of 70° or more. The system includes, in order from the object, a first positive lens group, a second negative lens group, a third positive lens group, and a fourth positive lens group. Upon zooming from wide-angle end state to telephoto end state, a distance between the first and second lens groups increases, a distance between the second and third lens groups decreases, and a distance between the third and fourth lens groups varies. The third lens group is composed of a positive front lens group and a negative rear lens group. Image plane correction upon camera shake can be performed by shifting only the rear lens group substantially perpendicularly to the optical axis. Given conditions are satisfied.

Abstract: Parasitic capacitances formed between bit lines to which signals are to be read out of memory cells and a signal transmission line arranged above them are to be reduced. Second complementary global bit lines for transmitting data read out of memory cells MC via complementary bit lines are arranged above a memory cell array. Each second global bit line is so arranged that a triangle having as its vertexes the center of the section of one of the complementary bit lines, that of the section of the other and that of the section of the second global bit line arranged directly above these complementary bit lines be an isosceles triangle.

Abstract: A delay from the release of a low power consumption mode of nonvolatile memory to the restart of read operation is reduced. Nonvolatile memory which can electrically rewrite stored information has in well regions plural nonvolatile memory cell transistors having drain electrodes and source electrodes respectively coupled to bit lines and source lines and gate electrodes coupled to word lines and storing information based on a difference between threshold voltages to a word line select level in read operation, and the nonvolatile memory has a low power consumption mode. In the low power consumption mode, a second voltage lower than a circuit ground voltage and higher than a first negative voltage necessary for read operation is supplied to the well regions and word lines. When boost forming a rewriting negative voltage therein, a circuit node at a negative voltage is not the circuit ground voltage in the low power consumption mode.

Abstract: An object is to provide a zoom lens system having compactness, a high zoom ratio, and high optical performance with preferably correcting various aberrations. The zoom lens system includes, in order from the object, a first lens group G1 having positive refractive power, a second lens group G2 having negative refractive power, a third lens group G3 having positive refractive power, and a fourth lens group G4 having positive refractive power. When a state of lens group positions varies from a wide-angle end state to a telephoto end state, a distance between the first lens group G1 and the second lens group G2 increases, a distance between the second lens group G2 and the third lens group G3 decreases, a distance between the third lens group G3 and the fourth lens group G4 varies, and the fourth lens group G4 moves along a zoom trajectory having a convex shape facing to an image.

Abstract: A microprocessor used in a pair with a baseband processor for performing the baseband processing, is provided with a central processing unit for calculation processing, a counter capable of measuring time in the calculation processing by the central processing unit, and an interface which enables the baseband processor to read the counter. By making the baseband processor read the counter, the processing by the baseband processor is synchronized with the processing by the central processing unit in the microprocessor. Consequently, it is possible to establish synchronization between video and voice when the video processing and the voice processing are separately performed by different processors.