Abstract: An apparatus for attaching a sheet-form member for protecting vehicle occupants comprises a clip that is secured in an attachment hole in a body panel. The clip has a flange that covers edge portions of the attachment hole and has a protection member attaching part that receives and retains an engagement part of the protection member, which may be a soft elastic sheet.

Abstract: The invention relates to a method of modeling reference data in an information system (IS), characterized in that it is based on a Unified Modeling Language (UML) model of reference data for the IS listed in deposits of application data for the IS. Any reference data in the IS is defined by a specialized concept inheriting the characteristics of a generic concept.

Abstract: The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects. A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data.

Abstract: Object is to provide an inner-focusing type zoom lens system carrying out focusing by moving a portion of a first lens group suitable for an auto-focus SLR camera. A zoom lens system includes, in order from an object, a first lens group having positive refractive power, a second lens group having negative refractive power, and a third lens group having positive refractive power. Upon zooming from a wide-angle end state to a telephoto end state, a distance between the first and the second lens groups increases, and a distance between the second and the third lens groups decreases. The first lens group is composed of, in order from the object, a 1A lens group G1A having positive refractive power, and a 1B lens group G1B having positive refractive power. Focusing from infinity to a close-range object is carried out by moving only the 1B lens group G1B to the object.

Abstract: A pair of multi-purpose eyeglasses comprises a main frame made from metal and including a lens holder for holding lenses, a pair of temple arms connected to both sides of the lens holder, and a pair of nose pads connected through a pair of pad arms to middle portions of the lens holder, each of the pad arms having a pad arm groove formed on a lens-side of the pad arm, the pad arm groove having a stepped portion formed therein; an inner frame detachably assembled with an inside of the main frame, the inner frame having inner frame grooves formed on middle portions of the inner frame corresponding to the pad arm grooves; and a sealing member attached to an inside of the inner frame, the sealing member including a sponge portion and a leather portion attached onto the sponge portion.

Abstract: In order to provide a fast super wide-angle lens system having the f-number of f/2.8 and a wide angle of view of 2?=100° or more in an imaging area of a digital camera and an image-capturing device equipped with the super wide-angle lens system. The lens system includes, in order from an object, a first lens group G1 having negative refractive power, an aperture stop S, and a second lens group G2 having positive refractive power, and the lens system satisfies predetermined conditional expressions.

Abstract: A tilt adjustable type steering apparatus for a vehicle according to the present invention has a failsafe mechanism that makes the vehicle unable to travel by locking, e.g., a speed-change shift at a parking range (P) when a steering wheel is tilted up through a large angle, and prevents the steering wheel from being tilted up when other than parking of the vehicle, e.g., during the traveling. The present tilt adjustable type steering apparatus for the vehicle is provided with a large angle tilt-up sensor 24 for detecting that a front side end support seat portion (a tilt-up stopper) 21 of a rear column member 5 abuts on a rear side end support seat portion (a tilt-up stopper) 21 of a front column member 4. When detecting a vehicle travelable state such as a release from a parking brake, a shift-down or shift-up of the change gear, etc.

Abstract: On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

Abstract: In a semiconductor device particularly including a phase change material, the reliability of the read-out operation is improved. In a read-out operation of a phase change memory, a bit line to be read out is precharged in advance with a sufficiently low voltage that can prevent the destructive read operation. In this state, after a word line is activated and a period in which the voltage is sufficiently discharged via a storage element which is in a low resistance state elapses (first read out), charge sharing is performed between the bit line and a read bit line of a sense amplifier which is precharged to a high voltage, and a read-out operation is performed again (second read out). Consequently, the read-out signal amount can be increased while suppressing the read current.

Abstract: In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.

Abstract: On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

Abstract: A flash memory 1 based on the multilevel storage technology for storing the information of two or more bits is provided with four banks 2a to 2d. For example, in the left side of the bank 2a, a data latch 6a is provided along one short side of the bank 2a, while in the right side thereof, a data latch 6b is provided along the other short side of the bank 2a. At the lower side of the data latches 6a, 6b, arithmetic circuits 7a, 7b are provided. The data latches 6a, 6b are respectively formed of SRAMs. A sense latch 5a is divided to one half in the right and left directions with reference to the center of sense latch row. The divided sense latch 5a is connected with the data latches 6a, 6b via the signal lines respectively allocated along both short sides of the bank 2a.

Abstract: A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

Abstract: In a steering apparatus for a car which presses and retains a steering column upon a fixing bracket to car body to be telescopically adjustable, the steering column is molded from a tubular material by a hydroforming process to have a swelled portion as a unitary structure thereof. There is formed on each side surface of this swelled portion an elongated hole for telescopic adjustment through which a fastening bolt of a clamp mechanism provided on a fixed bracket to steering column is inserted.

Abstract: For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate.

Abstract: The present invention relates to a global management system for a multimodule, multiprocessor machine (PK). The system is characterized in that it comprises an independent module (SM) dedicated to the global management of a plurality of first modules (M1 through Mn), the independent module (SM) being connected to a management tool (BUMP) for each of the first modules (M1 through Mn) by a first specific link supporting a given communication protocol that makes it possible to manage each of the first modules at the startup of the machine, during the running of the machine, and after the machine stops running, the independent module (SM) being connected to each of the first modules via a second link, and the independent module also being globally connected to the multimodule machine (PK) via a physical link of a local area network (LAN) linked to at least two of the first modules (M2 and M3).

Abstract: The reliability of data is significantly increased without considerably increasing costs by performing minor data corrections within an information storage device and performing major error corrections in an information processing device. When a request to transfer user data for reading is issued from an information processing device, a control circuit transfers the user data and management data to an error detection circuit, which checks the user data for errors. If the user data contains no error, the control circuit notifies the information processing device that the user data can be transferred, and transfers it to the information processing device. If the user data contains errors, an X count error position and correction data calculation circuit uses the user data and the management data to calculate correction locations and correction data, and judges whether the correction locations are correctable.

Abstract: In an apparatus in which workpieces are joined by self-piercing rivets, for example, a jig is used to determine whether axial alignment of a punch and a die is within an acceptable range. The jig substitutes for a die and has a shank and a head, the shank fitting within a die-receiving bore of the apparatus and the head having an axial opening receiving the punch when alignment is within the acceptable range. The head is constructed to permit viewing of the relationship of the punch and the opening.

Abstract: An IC card capable of reinforcing the prevention of the electrostatic damage without causing a rise in the cost of a semiconductor integrated circuit chip. The semiconductor integrated circuit chip (2) is mounted on a card substrate (1), and plural connection terminals (3) are exposed. The connection terminals are connected to predetermined external terminals (4) of the semiconductor integrated circuit chip, first overvoltage protection elements (7, 8, 9) connected to the external terminals are integrated in the semiconductor integrated circuit chip, and second overvoltage protection elements such as surface-mount type varistors (11) connected to the connection terminals are mounted on the card substrate. The varistors are variable resistor elements having a current tolerating ability greater than that of the first overvoltage protection elements.

Abstract: Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions in the first region and the second MISFET forming regions in the second region; forming a second insulating film over the surface of the semiconductor substrate between the first insulating films in each of the first and second regions; depositing a third insulating film over the second insulating film; forming a first conductive film over the third insulating film in the second region; forming, after removal of the third and second insulating films from the first region, a fourth insulating film over the surface of the semiconductor substrate in the first region; and forming a second conductive film over the fourth insulating film; wherein the third insulating film remains over the first insulating film in the se