Abstract: In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship: Rdrift=Rinitial×t?; where Rdrift represents a final resistance of the memory cell following the time period, Rinitial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and ? represents the drift parameter.

Abstract: The present invention is directed to a non-volatile memory device and a method of operating the same. The non-volatile memory device includes a first transistor connected to an nth bitline and a second transistor connected to an (n+1)th bitline. The first transistor and the second transistor are serially coupled between the nth bitline and the (n+1)th bitline. The non-volatile memory device may include a 2-transistor 1-bit unit cell where a drain region and a source region of a memory cell have the same or similar structure. Since a cell array of a non-volatile memory device according to the invention may include a 2-transistor 2-bit unit cell, storage capacity of the non-volatile memory device may be doubled.

Abstract: Provided is a fuse option device in a semiconductor integrated circuit. In the fuse option device, a pad receives an external fuse program signal, a program signal driving circuit is connected to the pad through a signal line and generates a program activation signal in response to the fuse program signal and an address validity signal. A fuse circuit is electrically programmed in response to the program activation signal, and a pull-down resistor is connected between the signal line and ground.

Abstract: A semiconductor memory device that performs an error control operation when an error exists in an externally received command or an externally received address, and a method of driving the semiconductor memory device are provided. The semiconductor memory device includes a memory cell array having a single-level cell area and a multi-level cell area, a command decoder which receives a command from an external source and decoding the command, an area determination unit which receives an address from an external source and determines whether a memory cell corresponding to the address belongs to either the single-level cell area or the multi-level cell area, a command flag generation unit which generates at least one enable control signal according to the decoded command and the determination result, and a logic circuit which generates a control signal for driving the memory cells included in the memory cell array or performs an error control operation, in response to the enable control signal.

Abstract: A semiconductor device and method of forming a pad thereof are provided. The device includes: a substrate; at least one first active region disposed in a first region of the substrate; at least one second active region disposed in a second region adjacent to the first region of the substrate; a plurality of first contacts disposed on the second active region; a first insulating layer disposed on the first active region and between the first contacts; a poly layer disposed on the first contacts and the first insulating layer; a plurality of second contacts disposed on the poly layer in the second region; a second insulating layer disposed between the second contacts and on the poly layer in the first region; and a pad disposed on the second insulating layer and the second contacts.

Abstract: A material dispensing pump includes a drip prevention system and method so as to avoid undesired dripping of the dispensed fluid. In one example, the fluid path is sealed. Positive pressure is applied to the fluid during a dispensing operation to present the fluid to the auger-style pump at a desired rate. Between dispensing operations, or when dispensing is completed, the fluid is placed in suspension, for example by applying a negative pressure, thereby preventing the fluid from being inadvertently released at the dispense tip. In addition, following a dispensing operation, the pump dispensing controller can be programmed to reverse the rotation of the feed screw, in order to draw the material in a reverse direction and to further suspend the fluid.

Abstract: High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

Abstract: A data line layout structure comprises a plurality of first data lines, second data lines, a third data line, a first data line driver, and a second data line driver. The plurality of first data lines are connected to sub mats in a memory mat so that a predetermined number of first data lines are connected to each sub mat. The second data lines are disposed in a smaller quantity than the number of the first data lines so as to form a hierarchy with respect to the first data lines. The third data line is disposed to form a hierarchy with respect to the second data lines, and transfers data provided through the second data lines to a data latch. The first data line driver is connected between the first data lines and the second data lines, and performs a logical ORing operation for output of the first data lines so as to drive a corresponding second data line.

Abstract: Provided is a method and an apparatus for driving a display panel with a temperature compensated driving voltage, which comprises a temperature sensor, a temperature section register, a comparing unit, a voltage register, a voltage controller and a driver. The comparing unit compares temperature data output from the temperature sensor to temperature section data stored in the temperature section register and outputs comparison data having predetermined bits. The voltage controller selects voltage data corresponding to the comparison data from the voltage data stored in the voltage register and outputs a voltage control signal corresponding to the selected voltage data. The driver outputs a driving voltage corresponding to the voltage control signal to the display panel from among the different driving voltages.

Abstract: In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region.

Abstract: A memory system and memory module includes a plurality of memory devices, each having a plurality, e.g. four, ports for transmitting and receiving command signals, write data signals and read data signals. One of the memory devices is connected to a host or controller, and the remaining memories are connected together, typically by point-to-point links. When the memory system configuration is such that at least one of the ports in at least one of the memory devices is not used, one or more other ports can use the pins that may otherwise have been used by the unused ports. As a result, a set of reconfigurable, shared pins is defined in which two ports share the pins. The port that is not being used in a particular application for the memory device is not connected to the shared pins, and another port that is being used in the application is connected to the shared pins. This allows for the used of fewer package pins and, consequently, reduced package size.

Abstract: A reference voltage generator generates a reference voltage that is less dependent on temperature and can adjust the dependence of the reference voltage on temperature and the reference voltage at the same time independently of each other. The reference voltage generator including a preliminary reference voltage generation unit which generates a preliminary reference voltage which is inversely proportional to temperature and a reference voltage generation unit which generates a reference voltage by dividing the preliminary reference voltage. The reference voltage generation unit includes: at least one resistor which is connected between the preliminary reference voltage and the reference voltage; at least one transistor which is connected between the reference voltage and an internal node; and at least one second resistor which is connected between the internal node and a ground. The preliminary reference voltage or a power supply voltage is applied to at least one gate of the transistor.

Abstract: A highly efficient LCD driving voltage generating circuit and method consumes a relatively small amount of power, as compared to conventional means. The LCD driving voltage generating circuit comprises a DC-DC converter for boosting an input voltage in response to a clock signal and for outputting the boosted voltage as a first driving voltage; a voltage controlled oscillator for generating the clock signal at a frequency that changes in response to the level of a control voltage; and a control voltage generator for generating the control voltage in response to the difference between a reference voltage and a feedback voltage derived from the first driving voltage. In this manner, as the feedback voltage becomes lower than a reference voltage, the frequency of the clock signal input into a DC-DC converter increases.

Abstract: A flash memory device and a read method thereof are provided. At a read operation, a sense node of a page buffer is developed while a bitline is developed and data of a selected memory cell is sensed based on the develop result of the sense node. For a develop period, voltage loss arising from the sense node is compensated fast and the compensated result is latched, which makes it possible to simplify the design and reduce a chip size.

Abstract: A vehicle interior illumination apparatus includes a first type touch switch which turns illumination ON and OFF when a human body touches a surface of an illumination lens on a vehicle compartment side, and a second type touch switch which switches between linkage and non-linkage between ON and OFF of illumination and a state of a door when the human body moves on the surface of the illumination lens on the vehicle compartment side. The first type touch switch includes a first transparent electrode on a surface of the illumination lens on the light source side for detecting touch of the human body on the surface of the illumination lens on the vehicle compartment side, and the second type touch switch includes a plurality of second transparent electrodes on the surface of the illumination lens on the light source side for detecting movement of the human body on the surface of the illumination lens on the vehicle compartment side.

Abstract: A touch switch for controlling accessory equipment of a vehicle in such a manner that malfunctions caused by factors such as changes in atmospheric conditions, receipt of an electromagnetic impulse, or the like can be avoided.

Abstract: An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.

Abstract: In a semiconductor device, and a method of manufacturing thereof, the device includes a substrate of single-crystal semiconductor material extending in a horizontal direction and a plurality of interlayer dielectric layers on the substrate. A plurality of gate patterns are provided, each gate pattern being between a neighboring lower interlayer dielectric layer and a neighboring upper interlayer dielectric layer. A vertical channel of single-crystal semiconductor material extends in a vertical direction through the plurality of interlayer dielectric layers and the plurality of gate patterns, a gate insulating layer being between each gate pattern and the vertical channel that insulates the gate pattern from the vertical channel.

Abstract: In an inverse calculation circuit, an inverse calculation method, and a storage medium encoded with a computer readable computer program code, a random number generator generates a first random number and a second random number; and an inverter receives a plurality of first bits expressing a first element of a finite field(s) as first inputs, receives a plurality of second bits expressing a second element of a finite field(s) as second inputs. In response to the first and second random numbers, the inverter outputs a plurality of third bits expressing the inverse elements of the first element. The first random number prevents a different power analysis (DPA) decryption attack, and the second random number prevents a timing decryption attack.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.